LYVE-1 在甲状腺乳头状癌的表达和意义

目的 观察淋巴管透明质酸受体1（LYVE-1）的表达和癌周组织中淋巴管的生成情况在甲状腺恶性肿瘤的变化及转 移中的作用。方法 应用免疫组织化学和real-time PCR方法检测45 例甲状腺乳头状癌中央区、癌周边区和正常甲状腺组织中的LYVE-1及其mRNA 表达情况,并计算淋巴管密度（LVD）。结果 甲状腺乳头状癌周边区LVD 高于甲状腺乳头状癌中央区,而正常组织中很少见LYVE-1 阳性的微淋巴管;甲状腺乳头状癌周边区LVD 与淋巴结转移有密切关系（P＜0.05）。结论 LYVE-1是一种特异性较高的淋巴管内皮特异性标志物,对淋巴管生成促进甲状腺乳头状癌的淋巴结转移。     

Syntheses and Crystal Structures of Two Tin(Ⅳ) Complexes with Aminosilane Bearing Ligand

Aminosilane bearing bulky substituents on nitrogen: LH2(L=Me2Si(NDipp-)2 , Dipp=2,6-diisopropylphenyl) was reacted with BuLi in toluene. The resulting bulky chelating dianion Me2Si(NDipp-)2 was used to synthesize the unusual spirocyclic heterotriatomic complex [Me2Si(NDipp)2]2Sn (1) by its reaction with SnCl4 and the bulky heterotriatomic complex Me2Si(NDipp)2SnPh2 (2) with Ph2SnCl2.1 belongs to the monoclinic system, space group P21/n with a=13.193(2), b=20.663(3), c=20.403(3), β=99.954(2)o, V=5478.3(15)3 , C55H85.5N4Si2Sn, Mr=977.64, Z=4, Dc=1.185Mg/m3 , μ(MoKα)=0.547mm-1 , F(000)=2086, S=1.000, the final R=0.0614 and wR=0.1322 for 14446 observed reflections (I2σ(I)) and R=0.0797 and wR=0.1456 for all data. 2 belongs to the triclinic system, space group Pī with a=10.36(15), b=13.204(7), c=14.363(7), α=90.214(10), β=106.182(7), γ=109.854(8)o, V=1764.4(15)3 , C38H50N2SiSn, Mr=681.58, Z=2, Dc=1.283 Mg/m3 , μ(MoKα)=0.785 mm-1 , F(000)=712, S=1.002, the final R=0.0498 and wR=0.0955 for 7533 observed reflections (I2σ(I)) and R=0.0676 and wR=0.1018 for all data. In the structure of 1, the tin atom is located in the spirocyclic center of the two fused four-membered SnN 2 Si rings. The two complexes were characterized by 1H NMR, elemental analysis, and single-crystal X-ray structural analysis.     

高能氩离子辐照硅产生的缺陷研究

在室温下750MeV氩离子对本征单晶硅进行辐照,通过用正电子湮没寿命测量技术、电子顺磁共振技术以及红外光吸收方法研究了辐照产生的缺陷.结果表明:电中性双空位是辐照产生的主要空位团;在4.3×10¹⁴ions/cm²的高剂量下未见样品发生非晶化转变;虽然在离子射程末端双空位的浓度随剂量的增加而显著增大,但在以电离激发过程为主要能损方式的区域里双空位的浓度基本不变.据此可以认为,电子能损过程对辐照产生的缺陷有退人作用.     

15.14MeV/u 136Xe离子引起的单粒子效应

研究了15.14MeV/u ¹³⁶Xe离子在不同批次的32k×8bits静态存储器中所引起的单粒子效应.获得了单粒子翻转和单粒子闭锁截面与入射角度的依赖关系.将单粒子效应截面与灵敏区中沉积的能量相联系,而不是线性能量转移(LET)值.估计了灵敏体积的深度和死层的厚度.     

CrN镀层的微粒磨损性能及其切削行为研究

在Teer UDP 550型闭合场非平衡磁控溅射离子镀设备上制备CrN镀层,以球-盘方法测定的比磨损率和微粒磨损法测定的微粒磨损率评价CrN镀层的耐磨性能,采用高速钢镀层钻头的钻孔数评价镀层的切削性能.结果表明,CrN镀层的微粒磨损率对氮流量(用光谱发射因子OEM值控制)的变化很敏感,而比磨损率却不能反映这种由于氮流量变化带来的镀层结构和性能的变化.在不同偏压条件下所制备的镀层微粒磨损率变化不明显.当微粒磨损率低于某一值时,CrN镀层的钻孔寿命明显提高,而比磨损率则无此规律.     

III-V族化合物半导体材料的高能重离子辐照效应

用高能（５００ＭｅＶ）Ｎｅ离子束对ＧａＡｓ和ＩｎＰ进行了辐照，用ＭｏｎｔｅＣａｒｌｏ模拟、正电子湮没谱学以及红外光谱研究了辐照产生的缺陷特性．结果表明，在未辐照的样品中存在单空位，经辐照后，可在样品中产生单空位；当剂量较大时，还会形成双空位甚至尺寸较大的空洞．红外光谱测量发现，在辐照后的ＧａＡｓ样品中有非晶区形成．此外，辐照在样品中还产生了反位缺陷ＧａＡｓ和ＩｎＰ以及受主杂质ＺｎＩｎ．对经１０１４ｉｏｎｓ／ｃｍ２剂量辐照的ＩｎＰ进行了光学实验，在辐照后的ＩｎＰ材料中发现了亚稳态中心． Both GaAs and InP were irradiated by high energy (500 MeV) Ne ions. The Monte Carlo simulation, positron annihilation and IR spectroscopy were used to study the radiation induced defects. The result showed that monovacancies existed in as grown samples, but more monovacancies were introduced, after Ne ions irradiation, and with increasing radiation dose, divacancies were formed, and eventually large voids were observed. The IR measurement for irradiated GaAs samples confirmed the...     

柔性有机场效应晶体管研究进展

柔性有机场效应晶体管具有可折叠、质量轻、低成本等优点,在柔性显示、柔性传感器、柔性射频标签和柔性集成电路等方面显示了广阔的应用前景.本文在介绍柔性有机场效应 晶体管最新研究进展的基础上, 总结了柔性有机场效应晶体管的器件结构和柔性有机场效应晶体管所使用的衬底材料、 栅绝缘层材料、有源层材料及电极材料, 阐述了柔性有机场效应晶体管的制备工艺, 并讨论了不同的弯曲方式对柔性有机场效应晶体管性能的影响, 最后总结和展望了柔性有机场效应晶体管的应用领域. 关键词： 柔性 晶体管 有机/聚合物 溶液加工     

Fabrication of an Integrated Pixel with an Organic Light-Emitting Diode Driven by Copper Phthalocyanine Organic Thin Film Transistors

An organic integrated pixel with organic light-emitting diodes （OLEDs） driven by organic thin film transistors （OTFTs） is fabricated by a greatly simplified processing. The OTFTs are based on copper phthalocyanine as the active medium and fabricated on indium-tin-oxide （ITO） glass with top-gate structure, thus an organic integrated pixel is easily made by integrating OLED with OTFT. The OTFTs show field-effect mobility of 0.4cm^2/Vs and on/off ratio of 10^3 order. The OLED is driven well and emits the brightness as large as 2100cd/m^2 at a current density of 14.6 μA /cm^2 at -19.7 V gate voltage. This simple device structure is promising in the future large-area flexible OLED displays.     

一维等离子体光子晶体的带隙研究

采用时域有限差分方法(FDTD),结合等离子体计算中的分段线性电流密度卷积技术(PLJERC)对一维等离子体光子晶体(1D-PPC)进行了数值模拟,给出了微分高斯脉冲在一维等离子体光子晶体中的传播过程。计算得到的带隙结构与K-P模型方法的结果一致。计算并分析了等离子体频率、介质介电常数、等离子体-介质层的厚度比以及周期厚度对一维等离子体光子晶体带隙结构的影响。