离子辐照单晶Si损伤效应的研究

回顾了低能离子注入单晶Si经由核弹性碰撞引起的损伤特征及其常规的研究方法,介绍了快重离子辐照单晶Si经由电子能损引起的损伤特点及研究现状,并对该领域的研究作了展望. The radiation damage in silicon induced by low energy ion implantation was briefly reviewed together with a short introduction to the common techniques in the area. The damage characteristics of swift heavy ion irradiation in silicon and its investigations were introduced with emphasis on the effects induced by processes of electronic energy losses. It is shown that swift heavy ion can induce defects far beyond the projected range and up to 28 MeV/μm the electronic energy ...     

重离子在半导体器件中引起的单粒子效应

重离子引起的单粒子效应是威胁航天器安全的重要因素之一 ,利用加速器进行地面模拟是研究单粒子效应的重要手段 .概述了单粒子效应研究的历史和现状,讨论了单粒子效应研究的基本方法 ,最后简要介绍了在兰州重离子加速器上已开展的单粒子效应研究工作. Single event effects (SEE ′s) have been observed in semiconductor device in space since 1975. It has been verified from many spaceflight tests that single event effect induced by cosmic ray is one of the important sources of anomalies and malfunctions of spacecraft. Initially, a brief outline of space radiation environment is given. The history and recent trends were described, and basic methods and necessary facilities for SEE testing were also discussed. Finally, the research ...     

非晶态合金的辐照损伤

非晶态合金也称之为金属玻璃。采用这个有点矛盾的名称,是因为它们在微观上具有类似于玻璃的无规则排列的原子结构,而在宏观上又具有良好的机械强度和光泽等金属特性。非晶态合金通常是熔融状态的金属或合金通过高冷却速率的淬火而制成。在这一淬火过程中冷却速率大于晶核形成和生长的速度,使它们来不及结晶便凝固,而继续保留了类似液体的结构。     

c-BN含量对(Ti,W)C/WC/Co金属陶瓷刀具材料力学性能的影响

采用真空热压烧结工艺制备了(Ti,W)C/WC/c-BN/Co金属陶瓷刀具材料,分析了(Ti,W)C/WC/c-BN/Co金属陶瓷刀具材料的微观结构、元素成分和物相组成,研究了不同含量c-BN对(Ti,W)C/WC/c-BN/Co金属陶瓷刀具材料微观结构和力学性能的影响.研究结果表明:适量添加c-BN 能有效细化颗粒,减少气孔等缺陷,提高材料的相对密度,(Ti,W)C/WC/c-BN/Co金属陶瓷刀具材料的断裂模式为穿/沿晶混合断裂模式;当c-BN含量为1wt;时,(Ti,W)C/WC/c-BN/Co金属陶瓷刀具的综合力学性能最优,其抗弯强度、断裂韧性和维氏硬度分别为769.32±10.21 MPa、6.69±0.18 MPa·m1/2和22.83±0.46 GPa.     

重离子辐照制备电池用微孔膜及其阻抗性质

利用离子辐照结合径迹蚀刻方法制备聚丙烯(PP)微孔膜.用加速器产生的单核能为11.4MeV·u-1(总能量2245.8MeV)的197Au离子束辐照PP膜,剂量为1×108ions·cm-2.辐照后PP膜沿离子路径产生损伤区域,用硫酸与重铬酸钾的混合液进行蚀刻(5-30min),制备出孔径为380-1610nm的聚丙烯微孔膜.对膜的表面和断面形貌进行表征,微孔膜的孔径大小及空间分布均匀,孔道上下贯通,形状近似为圆柱形.给出了微孔膜的孔隙率理论公式.将制备的聚丙烯微孔膜用作锂离子电池隔膜,用电化学阻抗谱(EIS)测定浸满电解液的微孔膜的离子电导率,并与商用隔膜进行比较.分析表明辐照剂量和孔径大小均会影响膜的孔隙率和离子电导率,选择合适的辐照剂量和蚀刻时间,可以制备出孔隙率和离子电导率符合应用标准的聚丙烯微孔膜.     

Modeling the applicability of linear energy transfer on single event upset occurrence

Geant4 tools were used to model the single event upset (SEU) of static random access memory cells induced by heavy ion irradiation. Simulated results obtained in two different regions of incident ion energies have been compared in order to observe the SEU occurrence by energetic ions and their effects on the radial ionization profile of deposited energy density. The disagreement of SEU cross sections of device response and radial distribution of deposited energy density have been observed in both low energy and high energy regions with equal linear energy transfer (LET) which correspond to the both sides of the Bragg peak. In the low energy region, SEUs induced by heavy ions are more dependent upon the incident ion species and radial distribution of deposited energy density, as compared with the high energy region. In addition, the velocity effect of the incident ion in silicon in the high energy region provides valuable feedback for gaining insight into the occurrence of SEU.     

Monte Carlo evaluation of spatial multiple-bit upset sensitivity to oblique incidence

We investigate the impact of heavy ion irradiation on a hypothetical static random access memory (SRAM) device. Influences of the irradiation angle, critical charge, drain-drain spacing, and dimension of device structure on the device sensitivity have been studied. These prediction and simulated results are interpreted with MUFPSA, a Monte Carlo code based on Geant4. The results show that the orientation of ion beams and device with different critical charge exert indispensable effects on multiple-bit upsets (MBUs), and that with the decrease in spacing distance between adjacent cells or the dimension of the cells, the device is more susceptible to single event effect, especially to MBUs at oblique incidence.     

Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers

Monte Carlo simulations reveal considerable straggling of energy loss by the same ions with the same energy in fully-depleted silicon-on-insulator (FDSOI) devices with ultra-thin sensitive silicon layers down to 2.5 nm. The absolute straggling of deposited energy decreases with decreasing thickness of the active silicon layer. While the relative straggling increases gradually with decreasing thickness of silicon films and exhibits a sharp rise as the thickness of the silicon film descends below a threshold value of 50 nm, with the dispersion of deposited energy ascending above ±10%. Ion species and energy dependence of the energy-loss straggling are also investigated. For a given beam, the dispersion of deposited energy results in large uncertainty on the actual linear energy transfer (LET) of incident ions, and thus single event effect (SEE) responses, which pose great challenges for traditional error rate prediction methods.     

广岛长崎原子弹爆炸的回顾与反思

 1945年8月6日,美国一架B-29战略轰炸机在日本广岛上空投下了第一颗原子弹,8月9日又在长崎投下第二颗原子弹,至今已整整60年了。原子弹的使用尽管迫使日本于1945年8月15日宣布无条件投降,结束了第二次世界大战。但是并未为人类赢得永久的和平,相反地却把世界带进了原子战争的时代,笼罩在广岛长崎上空的原子弹烟云,绵延到整个世界,核武器从此开始威胁全人类。一、原子弹的物理基础原子弹是利用原子核裂变反应瞬时释放巨大能量的核武器。其基本原理是:铀235、钚239等重核在中子轰击下发生裂变反应,这一过程同时放出2～3个中子和200MeV的能量（相当于3.2×10¹¹焦耳）。