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Simulation of near-infrared photodiode detectors based on β-FeSi_2/4H-SiC heterojunctions 总被引:1,自引:0,他引:1 下载免费PDF全文
In this paper,we propose a near-infrared p-type β-FeSi2/n-type 4H-SiC heterojunction photodetector with semiconducting silicide(β-FeSi2) as the active region for the first time.The optoelectronic characteristics of the photodetector are simulated using a commercial simulator at room temperature.The results show that the photodetector has a good rectifying character and a good response to near-infrared light.Interface states should be minimized to obtain a lower reverse leakage current.The response spectrum of the β-FeSi2/4H-SiC detector,which consists of a p-type β-FeSi2 absorption layer with a doping concentration of 1×1015cm-3 and a thickness of 2.5 μm,has a peak of 755 mA/W at 1.42 μm.The illumination of the SiC side obtains a higher responsivity than that of the β-FeSi2 side.The results illustrate that the β-FeSi2/4H-SiC heterojunction can be used as a near-infrared photodetector compatible with near-infrared optically-activated SiC-based power switching devices. 相似文献
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Optically controlled SiCGe/SiC heterojunction transistor with charge-compensation layer 总被引:1,自引:0,他引:1 下载免费PDF全文
A novel optically controlled SiCGe/SiC heterojunction transistor with charge-compensation technique has been simulated by using commercial simulator.This paper discusses the electric field distribution,spectral response and transient response of the device.Due to utilizing p-SiCGe charge-compensation layer,the responsivity increases nearly two times and breakdown voltage increases 33%.The switching characteristic illustrates that the device is latch-free and its fall time is much longer than the rise time.With an increase of the light power density and wavelength,the rise time and fall time will become shorter and longer,respectively.In terms of carrier lifetime,a compromise should be made between the responsivity and switching speed,the ratio of them reaches maximum value when the minority carrier lifetime equals 90 ns. 相似文献
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两种非晶碳化硅薄膜发光二极管 总被引:1,自引:0,他引:1
利用硅烷与甲烷的混合气在射频电场下的等离子体反应,淀积不同导电类型的非晶碳化硅薄膜,制成了p-i-n结注入型和均匀材料的碰撞电离型两种大面积发光二极管。本文报导这两种非晶发光器件的结构设计及光谱特性,并对器件的发光机现进行了讨论。 相似文献
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SiC1-xGex/SiC 异质结光电二极管特性的研究 总被引:5,自引:5,他引:0
使用二维器件模拟软件Medici, 对SiC1-xGex/SiC异质结的光电特性进行了模拟.设计了N型重掺杂SiC层的厚度为1 μm, P型轻掺杂SiC1-xGex层厚为0.4 μm, 二者之间形成突变异质结.在反向偏压3 V、光强度为 0.23 W/cm2的条件下, p-n+ SiC0.8Ge0.2/SiC和p-n+ SiC0.7Ge0.3/SiC敏感波长λ分别可以达到0.64 μm和0.7 μm, 光电流分别为7.765×10-7 A/μm和7.438×10-7 A/μm; 为了进一步提高SiC1-xGex/SiC 异质结的光电流, 我们把p-n+两层结构改进为p-i-n三层结构.在同样的偏压、光照条件下, p-i-n SiC0.8Ge0.2/SiC和p-i-n SiC0.7Ge0.3/SiC的光电流分别达到1.6734×10-6 A/μm和1.844×10-6 A/μm. 相似文献