用热壁CVD法在SiC衬底上生长SiCGe合金的热场分析与设计

采用有限元法,对热壁CVD法SiCGe合金生长炉中加热组件的感应加热和温度分布进行了研究.分析了感应线圈匝数和石墨衬托的厚度对磁矢势和温度分布的影响,获取了感应线圈数越多感应生成焦耳热越大且越均匀的结论,得出了随石墨厚度的增加升温速率而增加,相反轴向温度均匀性而变差的设计准则.模拟结果表明选取16匝线圈和10mm左右的石墨壁厚为优化的设计参数.

Analysis and Design of Temperature Field of SiCGe Alloy Growth by Hot-wall Chemical Vapor Deposition on SiC Substrates

The induction heating process and temperature distribution of a SiCGe alloy hot-wall chemical vapor deposition (HWCVD) furnace were studied by using the finite element method. The effects of both the number of induction coils and thickness of graphite susceptor on the distribution of magnetic vector potential and temperature are investigated. The calculations suggest that the larger and more homogeneous the Joule heating generate the more of induction coil turns are. By increasing the thickness of graphite susceptor, the heating rate increases, but just the reverse the temperature profiles at graphite susceptor inner wall along the axial direction go from bad to worse. All simulations results indicate that the design parameters can been optimized as 16 turns of coil and 10mm thickness of graphite susceptor.