Thermal resistance matrix representation of thermal effects and thermal design in multi-finger power heterojunction bipolar transistors

The thermal resistance matrix including self-heating thermal resistance and thermal coupling resistance is presented to describe the thermal effects of multi-finger power heterojunction bipolar transistors. The dependence of thermal resistance matrix on finger spacing is also investigated. It is shown that both self-heating thermal resistance and thermal coupling resistance are lowered by increasing the finger spacing, in which the downward dissipated heat path is widened and the heat flow from adjacent fingers is effectively suppressed. The decrease of self-heating thermal resistance and thermal coupling resistance is helpful for improving the thermal stability of power devices. Furthermore, with the aid of the thermal resistance matrix, a 10-finger power heterojunction bipolar transistor (HBT) with non-uniform finger spacing is designed for high thermal stability. The optimized structure can effectively lower the peak temperature while maintaining a uniformity of the temperature profile at various biases and thus the device effectively may operate at a higher power level.     

Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors

Silicon germanium(SiGe) heterojunction bipolar transistor(HBT) on thin silicon-on-insulator(SOI) has recently been demonstrated and integrated into the latest SOI BiCMOS technology.The Early effect of the SOI SiGe HBT is analysed considering vertical and horizontal collector depletion,which is different from that of a bulk counterpart.A new compact formula of the Early voltage is presented and validated by an ISE TCAD simulation.The Early voltage shows a kink with the increase of the reverse base-collector bias.Large differences are observed between SOI devices and their bulk counterparts.The presented Early effect model can be employed for a fast evaluation of the Early voltage and is useful to the design,the simulation and the fabrication of high performance SOI SiGe devices and circuits.     

Electronic transport properties of an (8,0) carbon/boron nitride nanotube heterojunction

The structure of a heterojunction made up of an (8, 0) carbon nanotube and an (8, 0) boron nitride nanotube is achieved through geometry optimization implemented in the CASTEP package. Based on the optimized geometry, the model of the heterojunction is established. Its transport properties are investigated by combining the nonequilibrium Green's function with density functional theory. Results show that both the lowest unoccupied molecular orbital and the highest occupied molecular orbital mainly locate on the carbon nanotube section. In the current--voltage characteristic of the heterojunction, a rectification feature is revealed.     

A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects

In this paper, we describe the saturation effect of a silicon germanium (SiGe) heterojunction bipolar transistor (HBT) fabricated on a thin silicon-on-insulator (SOI) with a step-by-step derivation of the model formulation. The collector injection width, the internal base—collector bias, and the hole density at the base—collector junction interface are analysed by considering the unique features of the internal and the external parts of the collector, as they are different from those of a bulk counterpart.     

基于有机/无机杂化钙钛矿有序结构的异质结及其光伏性能的研究

研究了一种新型的有机/无机杂化钙钛矿材料(3-BrC₃H₆NH₃)₂CuBr₄薄膜的聚集态形貌和良好的微观有序性特征, 霍尔迁移率测试结果表明该材料为p型半导体, 空穴迁移率为0.0025 cm²•V^－1•s^－1. 利用其在紫外-可见光谱范围内与C₆₀薄膜具有良好的光吸收互补性, 制备并研究了(3-BrC₃H₆NH₃)₂CuBr₄/C₆₀层状异质结结构中的暗态传输和光伏性能. 对不同退火温度下杂化钙钛矿薄膜的聚集态特性和器件性能之间的联系进行了探讨, 结果表明在低温退火条件下, 由于钙钛矿结构材料中有机组分排列更加有序, 器件显示更好的性能.     

Investigation of Zn_(1-x)Cd_xO films bandgap and Zn_(1-x)Cd_xO/ZnO heterojunctions band offset by x-ray photoelectron spectroscopy

A series of Zn_(1-x)Cd_xO thin films have been fabricated on sapphire by pulsed-laser deposition(PLD), successfully. To investigate the effect of Cd concentration on structural and optical properties of Zn_(1-x)Cd_xO films, x-ray diffraction(XRD),ultraviolet-visible spectroscopy(UV-vis), and x-ray photoelectron spectroscopy(XPS) are employed to characterize the films in detail. The XRD pattern indicates that the Zn_(1-x)Cd_xO thin films have high single-orientation of the c axis. The energy bandgap values of ZnCdO thin films decrease from 3.26 eV to 2.98 eV with the increasing Cd concentration(x)according to the(αhν)~2–hν curve. Furthermore, the band offsets of Zn_(1-x)Cd_xO/ZnO heterojunctions are determinated by XPS, indicating that a type-I alignment takes place at the interface and the value of band offset could be tuned by adjusting the Cd concentration.     

十二烷二酸修饰TiO_2电子传输层改善钙钛矿太阳电池的电流特性

在经典的平面异质结钙钛矿太阳电池中,TiO_2致密层的电子传输性能一直是获得优异光伏性能的决定性因素之一.相较于spriro-OMe TAD等常见的空穴传输材料优异的空穴传输能力,作为电子传输材料的TiO_2的导电性较弱,无法形成良好的电荷匹配.为了解决这个问题,我们使用自组装的十二烷二酸(DDDA)单分子层来修饰TiO_2致密层的表面,TiO_2致密层的导电性能得到大幅提升,并且其能带结构得到优化,促进了电子传输,降低了电子积聚和载流子复合,使得电池的短路电流密度(JSC)从修饰前的20.34 mA·cm~(-2)提升至修饰后的23.28 mA·cm~(-2),进而使得电池在标准测量条件下的光电能量转换效率从14.17%提升至15.92%.同时还发现,通过DDDA修饰TiO_2致密层,所制备的器件的光稳定性显著提升,器件未封装暴露在AM 1.5光强100 mW·cm~(-2)的模拟太阳光下超过720 min,保持初始效率的71%以上且趋于稳定.     

δ-(Zn,Cr)S(111)表面上的Dzyaloshinsky-Moriya作用:第一性原理计算

根据密度泛函理论的第一性原理计算了具有非中心反演对称的异质结δ-(Zn,Cr)S(111)体系的原子结构和电子结构.Cr原子之间通过第一层S原子传递磁性相互作用.结合广义布洛赫条件,又进一步计算了反方向的自旋螺旋能量与波矢的色散关系E(q)与E(-q).E(q)与E(-q)能量之差反映了δ-(Zn,Cr)S(111)的S层与Cr层之间空间反演对称性破缺引起的DMI的大小.通过海森伯相互作用(HBI)模型与Dzyaloshinsky-Moriya作用(DMI)模型拟合第一性原理计算值,得到了Cr原子间各近邻的HBI参数J_1-J_4与DMI参数d-_1,d_2.在δ-(Zn,Cr)S(111)中,Cr原子间的耦合为M型反铁磁.DMI参数d_1为-0.53 meV,为顺时针手性DMI,在δ-(Zn,Cr)S(111)界面上有可能会产生斯格明子.本文计算表明,磁性和非磁性半导体界面有可能存在DMI,为理论研究和磁存储技术的进步开拓一个新的方向.     

具有光电倍增的宽光谱三相体异质结有机彩色探测器

实验研究了P3HT：PBDT-TT-F：PCBM三相体异质结活性层光谱拓宽及其材料混合度对探测器光电特性的影响以及陷阱辅助光电倍增的机理.在此基础上,获得了一个覆盖350–750 nm波长范围的彩色探测器.该探测器在-1 V低偏压下红绿蓝三基色的光响应度和外量子效率分别达到了470,381,450 mA/W和93%,89%,121%,比探测率均接近10¹² Jones,且各基色的特性参数最大平均相对偏差均小于20%,同时频率带宽分别达到了5,8,8 kHz.结果表明：在保持二相体异质结薄膜原有微观形貌下,掺入少量光谱拓宽材料可实现活性层吸收光谱的拓宽.利用能级陷阱中电子的辅助作用引入外电路空穴注入,可实现探测器光电倍增.通过调节三相材料的混合度可实现基色间探测能力的均衡性.     

Tuning spin-filtering,rectifying, and negative differential resistance by hydrogenation on topological edge defects of zigzag silicene nanoribbons

By first-principles calculations, we propose three heterojunction nanodevices based on zigzag silicene nanoribbons with different edge-hydrogenated topological line defects. The devices all present excellent spin-filtering properties with 100% spin polarization as well as remarkable rectifying effect (with rectification ratio around 10²) and negative differential resistance behaviors. Our findings shed new light on the design of silicon-based nanodevices with intriguing spintronic applications.