Calculations of two dimensional electron gas distributions in AlGaN/GaN material system

This paper presents calculating results of the two-dimensional electron gas (2DEG) distributions in AlGaN/GaN material system by solving the Schr\"{o}dinger and Poisson equations self-consistently. Due to high 2DEG density in the AlGaN/GaN heterojunction interface, the exchange correlation potential should be considered among the potential energy item of Schr\"{o}dinger equation. Analysis of the exchange correlation potential is given. The dependencies of the conduction band edge, 2DEG density on the Al mole fraction are presented. The polarization fields have strong influence on 2DEG density in the AlGaN/GaN heterojunction, so the dependency of the conduction band edge on the polarization is also given.     

La1/8Ca7/8MnO3/Sr0.95Nb0.05TiO3异质结的整流特性和磁输运性质

在5%Nb掺杂的SrTiO3衬底上用磁控溅射法外延生长了La1/aCa7/aMnO3薄膜形成异质结,该异质结有类似于传统P-n结的整流特性.磁场下扩散电压减小,当温度低于130 K以下,扩散电压的减小非常明显.这和在此温度以下,La1/8Ca7/aMnO3出现自旋倾斜态密切相关.我们计算出异质结的结电阻和磁致电阻(MR),在不同大小的正负偏压,不同磁场下,都得到负的MR值.我们给出界面附近的La1/8Ca7/8MnO3的能带结构并分析了外加磁场对洪德耦合,Jahn-Teller畸变等机制的作用,来解释该异质结的磁输运行为.结果有助于了解高Ca掺杂锰氧化物异质结的性质.     

SrTiO3/α-Fe2O3异质结光阳极光电转换性能

作为一类重要的光电极材料,α-Fe2O3在太阳能转化方面有着潜在的应用前景.但是,光生电子空穴对的再复合导致α-Fe2O3的光电量子产率很低.为了抑制光生电子空穴对的再复合,提高α-Fe2O3的光电量子产率,采用Spin-coating方法在透明导电玻璃FTO(SnO2:F)衬底上制备了SrTiO3/α-Fe2O3异质结薄膜光电极,并对该光电极进行了XRD、SEM、紫外-可见透射光谱的表征.在三电极光电化学测试系统中对薄膜的光电流-电压特性、入射光子电流转化效率(Incident photon to current efficiency,IPCE)对波长的依赖性进行了表征.在相同的Xe灯照射条件下,SrTiO3/α-Fe2O3异质结光电极的光电流及IPCE值大于单一的SrTiO3、α-Fe2O3各自的光电流及IPCE值,这与理论预测的结论一致.     

Investigations on Pd:SnO2/porous silicon structures for sensing LPG and NO2 gas

P-type porous silicon (PS) structure has been prepared by anodic electrochemical etching process under optimized conditions. Photoluminescence studies of the PS structure show emission at longer wavelengths (red) for the excitation at 365 nm. Scanning electron microscope investigations of the PS surface confirm the formation of uniform porous structure, and the pore diameter have been estimated as 25 μm. Pd:SnO₂/PS/p-Si heterojunction with top gold ohmic contact developed by conventional methods has been used as the sensor device. Sensing properties of the device towards liquefied petroleum gas (LPG) and NO₂ gas have been investigated in an indigenously developed sensor test rig. The response and recovery characteristics of the sensor device at different operating temperatures show short response time for LPG. From the studies, maximum sensitivity and optimum operating temperature of the device towards LPG and NO₂ gas sensing has been estimated as 69% at 180 °C and 52% at 220 °C, respectively. The developed sensor device shows a short response time of 25 and 57 s for sensing LPG and NO₂ gases, respectively. Paper presented at the Third International Conference on Ionic Devices (ICID 2006), Chennai, Tamilnadu, India, Dec. 7–9, 2006.     

(n)nc-Si：H/(p)c-Si异质结中载流子输运性质的研究

采用常规等离子体增强化学气相沉积工艺,以高H₂稀释的SiH₄作为反应气体源和PH₃作为磷原子的掺杂剂,在p型(100)单晶硅((p)c-Si)衬底上, 成功地生长了施主掺杂型纳米硅膜((n)nc-Si:H),进而制备了(n)nc-Si:H/(p)c-Si异质结,并在230—420Ｋ温度范围内实验研究了该异质结的Ｉ-Ｖ特性.结果表明,(n)nc-Si:H/(p)c- Si异质结为一典型的突变异质结构,具有良好的温度稳定性和整流特性.正向偏压下 关键词： (n)nc-Si:H/(p)c-Si异质结 能带模型 电流输运机构 温度特性     

微波辅助快速制备2D/1D ZnIn2S4/TiO2 S型异质结及其光催化制氢性能

The threat and global concern of energy crises have significantly increased over the last two decades. Because solar light and water are abundant on earth, photocatalytic hydrogen evolution through water splitting has been considered as a promising route to produce green energy. Therefore, semiconductor photocatalysts play a key role in transforming sunlight and water to hydrogen energy. To date, various photocatalysts have been studied. Among them, TiO₂ has been extensively investigated because of its non-toxicity, high chemical stability, controllable morphology, and high photocatalytic activity. In particular, 1D TiO₂ nanofibers (NFs) have attracted increasing attention as effective photocatalysts because of their unique 1D electron transfer pathway, high adsorption capacity, and high photoinduced electron–hole pair transfer capability. However, TiO₂ NFs are considered as an inefficient photocatalyst for the hydrogen evolution reaction (HER) because of their disadvantages such as a large band gap (~3.2 eV) and fast recombination of photoinduced electron–hole pairs. Therefore, the development of a high-performance TiO₂ NF photocatalyst is required for efficient solar light conversion. In recent years, several strategies have been explored to improve the photocatalytic activity of TiO₂ NFs, including coupling with narrow-bandgap semiconductors (such as ZnIn₂S₄). Recently, microwave (MW)-assisted synthesis has been considered as an important strategy for the preparation of photocatalyst semiconductors because of its low cost, environment-friendliness, simplicity, and high reaction rate. Herein, to overcome the above-mentioned limiting properties of TiO₂ NFs, we report a 2D/1D ZnIn₂S₄/TiO₂ S-scheme heterojunction synthesized through a microwave (MW)-assisted process. Herein, the 2D/1D ZnIn₂S₄/TiO₂ S-scheme heterojunction was constructed rapidly by using in situ 2D ZnIn₂S₄nanosheets decorated on 1D TiO₂ NFs. The loading of ZnIn₂S₄ nanoplates on the TiO₂ NFs could be easily controlled by adjusting the molar ratios of ZnIn₂S₄ precursors to TiO₂ NFs. The photocatalytic activity of the as-prepared samples for water splitting under simulated solar light irradiation was assessed. The experimental results showed that the photocatalytic performance of the ZnIn₂S₄/TiO₂ composites was significantly improved, and the obtained ZnIn₂S₄/TiO₂ composites showed increased optical absorption. Under optimal conditions, the highest HER rate of the ZT-0.5 (molar ratio of ZnIn₂S₄/TiO₂= 0.5) sample was 8774 μmol·g^-1·h^-1, which is considerably higher than those of pure TiO₂ NFs (3312 μmol·g^-1·h^-1) and ZnIn₂S₄nanoplates (3114 μmol·g^-1·h^-1) by factors of 2.7 and 2.8, respectively. Based on the experimental data and Mott-Schottky analysis, a possible mechanism for the formation of the S-scheme heterojunction between ZnIn₂S₄ and TiO₂ was proposed to interpret the enhanced HER activity of the ZnIn₂S₄/TiO₂heterojunctionphotocatalysts.      

WO3/g-C3N4异质结催化剂的制备及其氧化脱硫性能

以尿素和钨酸铵为原料采用浸渍法制备了金属氧化物三氧化钨（WO₃）与石墨相氮化碳（g-C₃N₄）异质结复合材料WO₃/g-C₃N₄。采用XRD、UV-vis、SEM、PL和XPS表征手段考察了催化剂的理化性质,发现WO₃与g-C₃N₄存在较好的相互作用和电子转移,保证了WO₃/g-C₃N₄本身所具有较高的氧化脱硫活性。以WO₃/g-C₃N₄作为催化剂,过氧化氢异丙苯为氧化剂,考察其光催化氧化脱硫性能,在反应温度80℃,O/S物质的量比为3.0的反应条件下,反应180 min,二苯并噻吩（DBT）转化率可以达到72.79%。通过游离基捕获实验,发现超氧自由基（·O₂^-）、电子（e^-）、羟基自由基（·OH）起到了促进反应速率的作用,并对该体系的反应机理进行了探讨。     

Effect of film thickness manganite-based on interfacial barrier of heterojunctions

Interracial barrier is a key factor that determines the performances of heterojunctions. In this work, we study the effect of manganite film thickness on the effective interracial barrier for La0.67Sr0.33MnO3/Nb：SrTiO3 junctions, The barrier is extracted from the forward current-voltage characteristics. Our results demonstrate that the barrier decreases gradually from -0.85 eV to -0.60 eV when the film thickness decreases from 150 nm to 2 nm. The overall value of the barrier is only about 50% of the corresponding one determined from the photovoltaic effect.