卤氧化铋复合物光催化剂

利用半导体光催化降解有机污染物与分解水制氢对于解决能源短缺与环境污染这一世界性难题具有重要意义,引起了人们的重视.传统的光催化剂TiO2存在可见光利用率低与光生载流子的复合率高等问题[1-3],因此寻找新型高效光催化剂的工作迫     

光栅局域调控二维光电探测器

近年来,二维材料独特的物理、化学和电子特性受到了越来越多的科研人员的关注.特别是石墨烯、黑磷和过渡金属硫化物等二维材料具有优良的光电性能和输运性质,使其在下一代光电子器件领域具有广阔的应用前景.本文将主要介绍二维材料在光电探测领域上的应用优势,概述光电探测器的基本原理和参数指标,重点探讨光栅效应与传统光电导效应的区别,以及提高光增益和光响应度的原因和特性,进而回顾光栅局域调控在光电探测器中的最新进展及应用,最后总结该类光电探测器面临的问题及对未来方向的展望.     

Magnetic anisotropy manipulation and interfacial coupling in Sm3Fe5O12 films and CoFe/Sm3Fe5O12 heterostructures

The magnetic anisotropy manipulation in the Sm₃Fe₅O₁₂ (SmIG) films and its effect on the interfacial spin coupling in the CoFe/SmIG heterostructures were studied carefully. By switching the orientation of the Gd₃Ga₅O₁₂ substrates from (111) to (001), the magnetic anisotropy of obtained SmIG films shifts from in-plane to out-of-plane. Similar results can also be obtained in the films on Gd₃Sc₂Ga₃O₁₂ substrates, which identifies the universality of such orientation-induced magnetic anisotropy switching. Additionally, the interfacial spin coupling and magnetic anisotropy switching effect on the spin wave in CoFe/SmIG magnetic heterojunctions have also been explored by utilizing the time-resolved magneto-optical Kerr effect technique. It is intriguing to find that both the frequency and effective damping factor of spin precession in CoFe/SmIG heterojunctions can be manipulated by the magnetic anisotropy switching of SmIG films. These findings not only provide a route for the perpendicular magnetic anisotropy acquisition but also give a further path for spin manipulation in magnetic films and heterojunctions.     

Morphological study of an intrinsically stretchable photovoltaic bulk heterojunction

Thin‐film polymer solar cell consisting of [6,6]‐phenyl‐C71‐butyric acid methyl ester (PC₇₁BM) and poly[[4,8‐bis[(2‐ethylhexyl)oxy]benzo[1,2‐b:4,5‐b′]dithiophene‐2,6‐diyl][3‐fluoro‐2‐[(2‐ethylhexyl)carbonyl]thieno[3,4‐b]thiophenediyl]] (PTB7) demonstrates elastic stretchability with the aid of a high boiling point additive, 1,8‐diiodooctane (DIO). The usage of DIO not only helps to form uniformly distributed nanocrystalline grains, but may also create free volumes between the nano‐grains that allow for relative sliding between the nano‐grains. The relative sliding can accommodate large external deformation. Large dichroic ratios of the optical absorption of both PC₇₁BM and PTB7 were observed under large‐strain deformation, indicating reorientation of the nanocrystalline PC₇₁BM and PTB7 polymer chains along stretching direction. The dichroic ratio decreases to nearly 1.0 as the blend was relaxed to 0% strain. Therefore, the nanometer‐size grain blending morphology provides an approach to impart stretchability to organic semiconductors that are otherwise un‐stretchable. © 2018 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2018 , 56, 814–820     

Acid‐treated g‐C3N4‐Cu2O composite catalyst with enhanced photocatalytic activity under visible‐light irradiation

Acid‐treated g‐C₃N₄‐Cu₂O was prepared by hydrothermal reduction followed by high temperature calcination and acid exfoliation. The structures and properties of as‐synthesized samples were characterized using a range of techniques, such as X‐ray photoelectron spectroscopy, scanning electron microscopy, Photoluminescence Spectroscopy and the Brunauer–Emmett–Teller (BET) theory. The photocatalytic activity was evaluated by measuring the photodegradation of methyl orange under visible‐light irradiation. Based on the results of TEM, XPS, EPR and other techniques, it was verified that a heterojunction was formed. The acid treatment process can increase the specific surface area to form abundant heterojunction interfaces as channels for photo‐generated carrier separation, thereby enhancing its light utilization and quantum efficiency. Results indicate that acid‐treated g‐C₃N₄‐Cu₂O possesses a large specific surface area, which provides plentiful activated sites for heterojunctions to form; in addition, it showed a high visible light effect and the minimum charge‐transfer resistance. Furthermore, the g‐C₃N₄‐Cu₂O material exhibits high levels of effectiveness and stability. Electron paramagnetic resonance and a series of radical trapping experiments demonstrate that the holes and ?O₂^? could be the main active species in methyl orange photodegradation. This work could provide new insights into the fabrication of composite materials as high‐performance photocatalysts, and facilitate their application in addressing environmental protection issues.     

可见近红外光响应直接Z型异质结光催化剂LaNiO3/CdS的产氢性能

通过冷凝-回流方式制备可见近红外光响应直接 Z型 LaNiO₃/CdS纳米杂化物，在对其进行物理化学表征后将其应用于光解水产氢反应。在可见光照射下，LaNiO₃/CdS光催化剂在5 h的H₂产量达到737 μmol，其H₂产量是CdS的4.3倍(172 μmol)。光电化学测试证实，LaNiO₃/CdS之间异质结的构筑能有效地促进光生载流子在界面的迁移、分离，从而促进其光解水产氢效率和稳定性的提高。同时随着近红外光的引入，其产氢活性提高至996 μmol。在上转换荧光测试中，LaNiO₃在808 nm光激发下在406和628 nm显示出发射荧光，这表明其能在近红外光照射下产生光生载流子，从而进一步提高其光解水产氢效率。     

MoS2/SnS异质结太阳能电池的模拟研究

硫化亚锡(SnS)是一种Ⅳ-Ⅵ族层状化合物半导体材料,其禁带宽度与太阳能电池最佳带隙1.5 eV非常接近,并且在可见光范围内光的吸收系数很大(α>10⁴ cm^-1),因此SnS是一种很有应用前景的材料。本文利用太阳能电池模拟软件wxAMPS模拟了MoS₂/SnS异质结太阳能电池,主要研究SnS吸收层的厚度、掺杂浓度和缺陷态等因素对太阳能电池性能的影响。研究发现:SnS吸收层最佳厚度为2 μm,最佳掺杂浓度为1.0×10¹⁵ cm^-3;同时高斯缺陷态浓度超过1.0×10¹⁵ cm^-3时,电池各项性能参数随着浓度的增加而减小,而带尾缺陷态超过1.0×10¹⁹ cm^-3·eV^-1时,电池性能才开始下降;其中界面缺陷态对太阳能电池影响比较严重,界面缺陷态浓度超过1.0×10¹² cm^-2时,开路电压、短路电流、填充因子和转换效率迅速下降。另外,通过模拟获得的转换效率高达24.87%,开路电压为0.88 V,短路电流为33.4 mA/cm²。由此可知,MoS₂/SnS异质结太阳能电池是一种很有发展潜力的光伏器件结构。     

Electrical and photoelectrical behaviour of heterojunctions based on novel oligomeric metal complexes

Naringenin‐based Schiff base ligands with 4‐aminobenzoic hydrazide were obtained as a unilateral form ( L¹ ). The ligand was oligomerized by oxidative polycondensation reaction with NaOCl as an oxidant in an aqueous alkaline medium at 90 °C to form a functional oligomer ( L² ), and its transition metal complexes such as those with Cu(II), Ni(II) and Zn(II) were prepared. The monomer and the oligomeric compounds were characterized using various techniques. Optical and electrical properties of the complexes were also investigated. All compounds showed indirect band gaps and they can be accepted as being in the semiconductor class. Organic–inorganic hybrid devices were obtained using n‐Si inorganic semiconductor and the complexes. The characteristic parameters of the devices were determined using current–voltage (I–V) and capacitance–voltage measurements in the dark. Photoelectrical properties of the devices were investigated using I–V measurements under a solar simulator with an AM1.5 global filter. Copyright © 2015 John Wiley & Sons, Ltd.     

Photocatalytic Nanoheterostructures and Chemically Bonded Junctions Made by Solution-Based Approaches

While single compound semiconductors were initially used for photocatalysis, combining two compounds to form a heterojunction significantly increases the photocatalysis performance. This review will outline how heterojunctions are superior, explain the different heterostructure architectures assembled from nanoparticles, and discuss the importance of achieving a large and quality contact in the junction, the heterojunction. Reference is made to methods for increasing the charge carrier performance and reducing recombination. Solution-based synthesis approaches, have been selected as the preferred route of manufacture, for the low cost scalability, and ability to combine a larger number of compounds. The main objective of this review article is to provide insight to the range of chemical solution-based methods for forming chemically bonded junction in nanoheterostructures for photocatalysis. Methods include chemical precipitation, impregnation, chemical bath deposition, hot injection, solvothermal, photo-deposition, electrochemical deposition, cation exchange and linker assisted assembly. The synthesis of different photocatalysts is addressed for each synthesis method. Solution synthesis is offered for coupling oxide semiconductors (i.e. TiO₂, ZnO, WO₃, Fe₂O₃, BiVO₄) with other oxides or metal chalcogenide quantum dots or metallic plasmonic nanoparticles.     

Material profile influences in bulk‐heterojunctions

The morphology in mixed bulk‐heterojunction films are compared using three different quantitative measurement techniques. We compare the vertical composition changes using high‐angle annular dark‐field scanning transmission electron microscopy with electron tomography and neutron and x‐ray reflectometry. The three measurement techniques yield qualitatively comparable vertical concentration measurements. The presence of a metal cathode during thermal annealing is observed to alter the fullerene concentration throughout the thickness of the film for all measurements. However, the absolute vertical concentration of fullerene is quantitatively different for the three measurements. The origin of the quantitative measurement differences is discussed. © 2014 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2014 , 52, 1291–1300