Investigation of molar concentration effect on structural,optical, electrical,and photovoltaic properties of spray‐coated Cu2O thin films

High quality copper oxide thin films were prepared by nebulizer spray pyrolysis technique using different concentrations of copper precursor solution. Concentration‐dependent structural, morphological, optical, and electrical properties of the prepared films are discussed. X‐ray diffraction studies done for the samples confirmed that the deposited films are in Cu₂O phase with polycrystalline cubic structure. Atomic force microscopy analysis revealed that all the films are composed of nano sheet shaped grains covering the substrate surface. Optical studies done on the samples showed band gap values 2.42, 2.31, and 2.02 eV for the solution concentration 0.01, 0.05, and 0.1 M, respectively. Photoluminescence spectral analysis showed the emission band at 620 nm confirming the formation of cuprous oxide. Electrical analysis of the films showed p‐type conductivity with a low resistivity 2.19 × 10² Ω.cm and high carrier concentration 16.76 × 10 ¹⁵ cm⁻³ for the molar concentration 0.1 M. In this work, Cu₂O/ZnO heterojunctions were also prepared, and solar cell properties were studied; they were found to show increased open circuit voltage and short circuit current for higher copper concentration.     

Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide(a-SiOx:H) on〈100〉- and 〈111〉-orientated c-Si wafers

Hydrogenated amorphous silicon oxide(a-SiOx:H) is an attractive passivation material to suppress epitaxial growth and reduce the parasitic absorption loss in silicon heterojunction(SHJ) solar cells. In this paper, a-SiOx:H layers on different orientated c-Si substrates are fabricated. An optimal effective lifetime(τ(eff)) of 4743 μs and corresponding implied opencircuit voltage(iV(oc)) of 724 mV are obtained on〈100〉-orientated c-Si wafers. While τ(eff) of 2429 μs and iV_oc of 699 mV are achieved on 111-orientated substrate. The FTIR and XPS results indicate that the a-SiOx:H network consists of SiOx(Si-rich), Si–OH, Si–O–SiHx, SiO2 ≡ Si–Si, and O3 ≡ Si–Si. A passivation evolution mechanism is proposed to explain the different passivation results on different c-Si wafers. By modulating the a-SiOx:H layer, the planar silicon heterojunction solar cell can achieve an efficiency of 18.15%.     

Novel conjugated copolymers based on dithiafulvalene moiety for bulk heterojunction solar cells

New conjugated copolymers, P1‐P3 , based on dithiafulvalene‐fused entity and different conjugated segments have been synthesized. Incorporation of electron‐deficient conjugated segments into the conjugated copolymers results in red shifting the absorption band and lowering the hole mobility. Bulk heterojunction solar cells using on these polymers as the donor and [6,6]‐phenyl‐C61 ‐butyric acid methyl ester (PC₆₁BM) as the acceptor were fabricated by solution process. The cells based on the blend of P1‐P3 /PC₆₁BM (1:1, w/w) have power conversion efficiencies (PCEs) ranging from 0.53 to 0.93%. Among these, the cell of P1 /PC₆₁BM exhibited the highest open‐circuit voltage at 0.85 V, and the cell of P3/PC₆₁BM exhibited the best PCE at 0.93% with the short‐circuit current (J_SC) of 4.88 mA/cm². © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2012     

Photovoltaic devices using semiconducting polymers containing head‐to‐tail‐structured bithiophene,pyrene, and benzothiadiazole derivatives

An alternating copolymer composed of heal‐to‐tail‐structured 3,4′‐dihexyl‐2,2′‐bithiophene (DHBT) and pyrene units [poly(DHBT‐alt‐PYR)] was synthesized using a Stille coupling reaction for use in photovoltaic devices as a p‐type donor. For the reduction of the bandgap energy of poly(DHBT‐alt‐PYR), 4,7‐bis(3′‐hexyl‐2,2′‐bithiophen‐5‐yl)benzo[c][1,2,5]thiadiazole (BHBTBT) units were introduced into the polymer. Poly(DHBT‐co‐PYR‐co‐BHBTBT)s were synthesized using the same polymerization reaction. The synthesized polymers were soluble in common organic solvents and formed smooth thin films after spin casting. The optical bandgap energies of the polymers were obtained from the onset absorption wavelengths. The measured optical bandgap energy of poly(DHBT‐alt‐PYR) was 2.47 eV. As the BHBTBT content in the ter‐polymers increased, the optical bandgap energies of the resulting polymers decreased. The bandgap energies of poly(50DHBT‐co‐40PYR‐co‐10BHBTBT) and poly(50DHBT‐co‐20PYR‐co‐30BHBTBT) were 1.84 and 1.73 eV, respectively. Photovoltaic devices were fabricated with a typical sandwich structure of ITO/PEDOT:PSS/active layer/LiF/Al using the polymers as electron donors and [6,6]‐phenyl C₇₁‐butyric acid methyl ester as the electron acceptor. The device using poly(50DHBT‐co‐20PYR‐co‐30BHBTBT) showed the best performance among the fabricated devices, with an open‐circuit voltage, short‐circuit current, fill factor, and maximum power conversion efficiency of 0.68 V, 5.54 mA/cm², 0.35, and 1.31%, respectively. © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2012     

Effect of additive length and chemistry on the morphology of blends of conjugated thiophenes and fullerene derivative acceptor molecules

Small molecule additives have been shown to increase the device efficiency of conjugated polymer (donor) and fullerene derivative (acceptor) based organic solar cells by modifying the morphology of the device active layer. In this paper we conduct a systematic study of how additives affect the donor‐acceptor morphology using molecular dynamics simulations of blends of thiophene‐based oligomers, mimicking poly(3‐dodecylthiophene) (P3DDT) or poly(2,2′:5′,2”‐3,3”‐didocyl‐terthiophene) (PTTT), and fullerene derivatives with additives of varying length and chemical functionalization, mimicking experimentally used additives like methyl ester additives, diiodooctane, and alkanedithiols. We find that functionalization of additives with end groups that are attracted to acceptor molecules are necessary to induce increased donor‐acceptor macrophase separation. In blends where acceptors intercalate between oligomer alkyl side chains, functionalized additives decrease acceptor intercalation. Functionalized additives with shorter alkyl segments increase acceptor macrophase separation more than additives with same chemical functionalization but longer alkyl segments. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2015 , 53, 1046–1057     

Chitosan/Ce(IV) redox polymerization‐based amplification for detection of DNA point mutation

Polymerization‐based signal amplification, a technique developed for use in rapid diagnostic tests, hinges on the ability to localize initiators as a function of interfacial binding events. We report here a new DNA detection method in which polymer growth in redox‐polymerization is used as a means to amplify detection signals. The introduction of biotin‐labeled chitosan (biotin‐CS) with highly dense amino groups into the polymerization amplification as macromolecular reducing agent, beneficially simplifies amplification operation, as well as, provides a large amount of initiation points to improve the sensitivity of detection. DNA hybridization, SA and biotin binding reactions led to the attachment of CS on a solid surface where specific DNA sequences were located. With the addition of the mixture containing monomer AM, crosslinker PEGDA and oxidant CAN onto the CS location, the growth of polymer films was triggered to render the corresponding spots readily distinguishable to the naked eye. Direct visualization of 0.21 fmol target DNA molecules of interest was demonstrated. Non‐small cell lung cancer p53 sequence was further selected as a proof‐of‐principle to detect DNA point mutation. The proposed method exhibited an efficient amplification performance for molecule detection, and paved a new way for visual diagnosis of biomolecules. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2016 , 54, 1929–1937     

Influence of growth temperature and post-annealing on an n-ZnO/p-GaN heterojunction diode

We report on an n-ZnO/p-GaN heterojunction diode fabricated from zinc oxide (ZnO) films at various growth temperatures (450, 500, 550, and 600 °C) by RF sputtering. The films were subsequently annealed at 700 °C in N₂ ambient. To investigate the influence of the growth temperature of n-ZnO films, the microstructural, optical, and electrical properties were measured using scanning electron microscopy (SEM), X-ray diffraction (XRD), photoluminescence (PL), and Hall measurements. The XRD pattern showed the preferred orientation along the c-axis (002) regardless of growth temperature. The PL spectra showed a dominant sharp near-band-edge (NBE) emission. Current–voltage (I–V) curves showed excellent rectification behavior. The turn-on voltage of the diode was observed to be 3.2 V for the films produced at 500 °C. The ideality factor of ZnO film was observed to be 1.37, which showed the best performance of the diode.     

The band alignment at CdS/Cu2ZnSnSe4 heterojunction interface

Band alignment at CdS/Cu₂ZnSnSe₄ heterojunction interface is studied by X‐ray photoemission spectroscopy. The Cu₂ZnSnSe₄ thin films are prepared by selenization of electrodeposited Cu‐Zn‐Sn precursors. CdS overlayers with different thickness are sequentially grown on the Cu₂ZnSnSe₄ substrate by pulsed laser deposition process. Photoemission spectra are obtained before and after each growth to study the conduction and valence band offsets at the heterojunction interface. The determined conduction band offset of 0.34 eV indicates a spike‐like ‘type I’ band alignment at CdS/Cu₂ZnSnSe₄ interface. The spike will avoid interface recombination, and it is low enough that electron could transfer from the Cu₂ZnSnSe₄ layer to the buffer layer which is suitable for solar cell's fabrication. Copyright © 2012 John Wiley & Sons, Ltd.     

退火温度对TiO2/CdSe纳米片异质结薄膜光电性能的影响

采用水热法在FTO上制备（001）高活性晶面主导的TiO₂纳米片薄膜,利用循环伏安法在TiO₂纳米片薄膜上沉积CdSe颗粒,制备了TiO₂/CdSe纳米片异质结薄膜。分别在150、250、350、450 ℃,氩气保护气氛中对样品进行退火。利用X射线衍射仪（XRD）、场发射扫描电镜（FESEM）、X射线光电子能谱分析仪（XPS）、紫外-可见（UV-Vis）分光光度计以及电化学工作站对不同温度退火后的TiO₂/CdSe纳米片异质结薄膜的微观形貌、晶体结构、光电化学性能进行表征和测试。结果表明：六方相CdSe纳米颗粒均匀包覆在TiO₂纳米片表面,直径30 nm左右;随着退火温度的升高CdSe纳米颗粒长大,形成光滑的CdSe薄膜,且晶化程度提高;TiO₂纳米片表面的Se元素与Cd元素发生氧化;TiO₂/CdSe纳米片异质结薄膜对可见光的吸收光谱发生红移,禁带宽度逐渐减小。光电化学性能测试表明随着退火温度的升高,TiO₂/CdSe纳米片异质结薄膜的光电流密度显著提高,开路电压减小,但由于SeO2和CdO的出现,导致填充因子减小,影响光电转换效率的提高。在本实验条件下,TiO₂/CdSe纳米片异质结薄膜的最佳退火温度为150 ℃,填充因子为0.77,光电转换效率达到3.12%。     

Bi2Fe4O9/g-C3N4/UiO-66三元复合材料的协同光催化作用

通过水热法合成具有协同机制的三元复合材料Bi₂Fe₄O₉/g-C₃N₄/UiO-66,研究表明三元复合光催化剂的催化活性要高于二元材料和纯材料。这主要是由于Bi₂Fe₄O₉更易于和g-C₃N₄结合形成稳定的Z-scheme异质结结构,使三元复合材料增强了可见光响应能力,提高了电子-空穴分离能力,增强了空穴和电子的氧化还原能力。