Oxidative Addition Reactions of Element–Hydrogen Bonds with Different Polarities to a Gallium(I) Compound

The gallium(I) derivative [Ga({N(dipp)CMe}₂CH)] ( 1 ; dipp=2,6‐diisopropylphenyl) undergoes facile oxidative addition reactions with various element–hydrogen bonds including N? H, P? H, O? H, Sn? H, and H? H bonds. This was demonstrated by its reaction with triphenyltin hydride, ethanol, water, diethylamine, diphenylphosphane, and dihydrogen. All products were characterized by means of single‐crystal X‐ray structure determination, NMR spectroscopy, IR spectroscopy, and mass spectrometry.     

有机锡配合物{[(o-MeC6H4CH2)2Sn(O)]2(o-MeC6H4CH2NHO)}2的合成、结构和性质研究

二(o-甲基苄基)二氯化锡与N-(o-甲基苄基)羟胺在碱性条件下反应,合成了有机锡配合物{[(o-MeC6H4CH2)2Sn(O)]2(o-MeC6H4CH2NHO)}2。经X-射线衍射方法测定了化合物的晶体结构。该化合物晶体属三斜晶系,空间群P-1,晶体学参数 a =1.0604(5) nm,b =1.3078(7) nm,c = 1.3742(47 nm,α=105.174(12)?,β = 90.229(7)?,γ=101.028(6)?,Z = 1,V =1.8025(15) nm3,Dc=1.522Mg•m-3,?(MoKa)= 1.423 mm-1,F(000)= 834,R1=0.0455,wR2=0.1017。化合物是三个以Sn2O2构成的平面四元环组成的梯状结构,锡原子均为五配位的畸变三角双锥构型。测定了配合物的体外抗癌活性,结果表明配合物对WiDr和MCF-7等癌细胞有一定的抑制能力。     

梯形结构二(对甲基苄基)锡氧(氯)簇合物的合成、结构及量子化学研究

二(对甲基苄基)二氯化锡和氢氧化钠溶液反应,合成了梯形结构二(对甲基苄基)锡氧(氯)簇合物,经X-射线衍射测定了其晶体结构。属三斜晶系,空间群为P1,晶体学参数a=0.979 52(16) nm,b=1.313 8(2) nm,c=1.419 5(2) nm,α=62.965(10)°,β=88.551(12)°,γ=73.709(11)°,V=1.550 5(5) nm³,Z=1,D_c=1.563 g·cm^-3,μ(Mo Kα)=17.38 cm^-1,F(000)=727,R=0.024 2,wR=0.057 9。簇合物为由Sn₂O₂构成的平面四元环形成的1个中心内环和2个由Sn₂OCl(O)构成的平面四元外环组成的梯形结构。锡原子均为五配位三角双锥构型。对其结构进行量子化学从头计算,探讨了配合物的稳定性、分子轨道能量以及一些前沿分子轨道的组成特征。     

Electrochemical Sensor for trans‐Resveratrol Determination Based on Indium Tin Oxide Electrode Modified with Molecularly Imprinted Self‐Assembled Films

A voltammetric sensor for sensitive and specific determination of trans‐resveratrol (RES) were prepared based on immobilization of an RES‐imprinted film on the surface of functionalized Indium Tin Oxide (ITO) electrode, which was modified with γ‐methacyloxypropyl trimethoxysilane (γ‐MPS). Cyclic Voltammetry (CV) was presented to extract RES from the molecularly imprinted polymer film and RES were extracted rapidly and completely. The binding performance of the imprinted electrode with the template RES were investigated using differential pulse voltammetry (DPV). The results showed that the imprinted ITO film can give selective recognition to the template RES over that of structurally analogous molecules. A linear response to RES in the concentration range of 2.0×10^?6 M to 2.0×10^?5 M was observed with a correlation coefficient of 0.992, and the detection limit of the electrochemical sensor was 8.0×10^?7 M. Whereas, binding to the reference nonimprinted electrode, made in the same way but without the addition of template RES, there was almost no response to RES.     

Strategy for Low Background‐Current Levels in the Electrochemical Biosensors Using Horse‐Radish Peroxidase Labels

This article describes an electrochemical strategy to achieve low background‐current levels in horse‐radish peroxidase (HRP)‐based electrochemical immunosensors. The strategy consists of (i) the use of an HRP substrate/product redox couple whose formal potential is high and (ii) the use of an electrode that shows moderate electrocatalytic activity for the redox couple. The strategy is proved by a model biosensor using a catechol/o‐benzoquinone redox couple and an indium tin oxide (ITO) electrode. The combined effect of high formal potential and moderate electrocatalytic activity allows o‐benzoquinone electroreduction with minimal catechol electrooxidation and H₂O₂ electroreduction. The detection limit for mouse‐IgG is 100 pg/mL.     

Platinum–tin complexes as catalysts for the anodic oxidation of borohydride

Platinum–tin complexes were prepared by the reduction of Pt(IV) with Sn(II) in HCl media and studied by light absorption spectrometry, X-ray photoelectron spectroscopy (XPS), and electron microscopy. The formation of three complexes, H₃[Pt(SnCl₃)₅], H₂[Pt(SnCl₃)₂Cl₂], and H₂[Pt₃(SnCl₃)₈], depending on HCl and SnCl₂ concentrations, has been shown. The glassy carbon (GC) electrode modified in the complexes solutions was found to be an electrocatalyst for borohydride oxidation in a 1.0-M NaOH solution. Comparison of BH₄ ⁻ electrooxidation on Pt and on GC modified with platinum–tin complexes has shown that catalytic hydrolysis of BH₄ ⁻ did not proceed in the latter case in contrast to its oxidation on the Pt electrode, and only direct BH₄ ⁻ oxidation has been observed in the positive potentials scan. The activity of Pt–Sn complexes for BH₄ ⁻ oxidation changes with time and eventually decreases due to Sn(II), bound in the complex with Pt(II), oxidation by atmospheric oxygen. The complexes may be renewed by addition of missing amounts of SnCl₂ and HCl.     

Band bending at the conducting polymer/indium tin oxide interfaces with and without ultraviolet treatment

In this study, the effect of ultraviolet treatment on the band bending at the poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate)/indium tin oxide (PEDOT:PSS/ITO) interfaces were researched. The authors suggested that ultraviolet treatment could lead to a reduction in the band bending at the PEDOT:PSS/ITO interface, owing to the removal of carbon contamination at the ITO surfaces and a decrease in the number of the trap-states at the PEDOT:PSS/ITO interface.     

Atmospheric pressure chemical vapour deposition of fluorine‐doped tin(IV) oxide from fluoroalkyltin precursors

Perfluoroalkytin compounds R_(4−n)Sn(R_f)_n (R = Me, Et, Bu, R_f = C₄F₉, n = 1; R = Bu, R_f = C₄F₉, n = 2, 3; R = Bu, R_f = C₆F₁₃, n = 1) have been synthesized, characterized by ¹H, ¹³C, ¹⁹F and ¹¹⁹Sn NMR, and evaluated as precursors for the atmospheric pressure chemical vapour deposition of fluorine‐doped SnO₂ thin films. All precursors were sufficiently volatile in the range 84–136 °C and glass substrate temperatures of ca 550 °C to yield high‐quality films with ca 0.79–2.02% fluorine incorporation, save for Bu₃SnC₆F₁₃, which incorporated <0.05% fluorine. Films were characterized by X‐ray diffraction, scanning electron microscopy, thickness, haze, emissivity, and sheet resistance. The fastest growth rates and highest quality films were obtained from Et₃SnC₄F₉. An electron diffraction study of Me₃SnC₄F₉ revealed four conformations, of which only the two of lowest abundance showed close F Sn contacts that could plausibly be associated with halogen transfer to tin, and in each case it was fluorine attached to either the γ‐ or δ‐carbon atoms of the R_f chain. Copyright © 2005 John Wiley & Sons, Ltd.     

Mechanical and optoelectric properties of post-annealed fluorine-doped tin oxide films by ultraviolet laser irradiation

The fluorine-doped tin oxide (FTO) thin film deposited on a soda-lime glass substrate was annealed by a defocus ultraviolet (UV) laser irradiation at ambient temperature. The mechanical and optoelectric properties of FTO films annealed by using the various laser processing parameters were reported. After the FTO films were subjected to laser post-annealing, the microhardness were slightly less but the reduced modulus values were larger than that of unannealed FTO films, respectively. The average optical transmittance in the visible waveband slightly increased with increasing the laser annealing energy and scan speed. Moreover, all the sheet resistance of laser annealed films was less than that of the unannealed ones. We found that the sheet resistance decrease was obviously influenced by annealing. The suitable annealing conditions could maintain the film thickness and relief the internal stress generated in the film preparation process to improve the electrical conductivity via decreasing laser energy or increasing scan speed.     

Preparation and characterization of octadecylsilane monolayers on indium–tin oxide (ITO) surfaces

The preparation and characterization of octadecylsilane, C₁₈, monolayers on indium–tin oxide (ITO) have been studied carefully. A reproducible procedure was developed for the formation of C₁₈/ITO employing octadecyltrimethoxysilane (OTMS) as a monomer. The films were studied by means of electrochemistry, wettability, infrared and atomic force microscopy. All these measurements provide evidence for the formation of a disorganized, ‘brush-type’ monolayer with a maximum surface fractional coverage of 0.90±0.04. The surface coverage can be controlled through the silanization time. The applications and implications of such disorganized monolayers in electroanalytical chemistry are discussed.