Different Complexation Behavior of P‐Functionalized Ferrocene Derivatives Towards SnCl2, SnCl4 and SnPh2Cl2: Auto‐ionization and Redox‐Type Reactions

The novel phosphonyl‐substituted ferrocene derivatives [Fe(η⁵‐Cp)(η⁵‐C₅H₃{P(O)(O‐iPr)₂}₂‐1,2)] ( Fc^1,2 ) and [Fe{η⁵‐C₅H₄P(O)(O‐iPr)₂}₂] ( Fc^1,1′ ) react with SnCl₂, SnCl₄, and SnPh₂Cl₂, giving the corresponding complexes [(Fc^1,2)₂SnCl][SnCl₃] ( 1 ), [{(Fc^1,1′)SnCl₂}_n] ( 2 ), [(Fc^1,1′)SnCl₄] ( 3 ), [{(Fc^1,1′)SnPh₂Cl₂}_n] ( 4 ), and [(Fc^1,2)SnCl₄] ( 5 ), respectively. The compounds are characterized by elemental analyses, ¹H, ¹³C, ³¹P, ¹¹⁹Sn NMR and IR spectroscopy, ³¹P and ¹¹⁹Sn CP‐MAS NMR spectroscopy, cyclovoltammetry, electrospray ionization mass spectrometry, and single‐crystal as well as powder X‐ray diffraction analyses. The experimental work is accompanied by DFT calculations, which help to shed light on the origin for the different reaction behavior of Fc^1,1′ and Fc^1,2 towards tin(II) chloride.     

极谱法测定地质样品中锡的方法改进

过氧化钠熔融分解样品,热水浸提,试样经铍盐做共沉淀剂,用乙二胺四乙酸(EDTA)消除钙、镁等的影响,在盐酸-氯化铵底液中,用极谱法对锡进行测定,改进并简化了国标方法.对极谱法测定地质样品中锡从熔矿方式、测试温度以及干扰元素的影响及消除等方面进行探讨,并对仪器的工作条件进行优化.锡的方法检出限为10.0μg/g.方法经标准物质验证,测定值与标准值相吻合,并进行不同仪器和方法的对比实验,结果一致,准确度高.方法精密度(RSD,n=12)低于2%.方法效率高、测定结果准确可靠,已应用于大量地质样品的分析中.     

A Bis‐Sulfonyl O,C,O Aryl Pincer Ligand and its Tin(II) Complex: Synthesis,Structural Studies,and DFT Calculations

The efficiency of the deprotonated aryl bis‐sulfone [2,6‐{(p‐tolyl)SO₂}₂C₆H₃]^? as an O,C,O‐coordinating pincer‐type ligand was described. The bis‐sulfone precursor was synthesized using a straightforward palladium‐catalyzed cross‐coupling reaction. As a result of directed ortho metalation (DoM) through sulfonyl groups, a selective lithiation of the aryl group was achieved and the corresponding carbanion was isolated and its structure determined by single‐crystal X‐ray diffraction analysis. A heteroleptic tin(II) complex has been prepared by a nucleophilic substitution reaction. Crystallographic analysis and DFT calculations indicate that the bis‐sulfonyl moiety acts as a new O,C,O‐coordinating pincer‐type ligand with intramolecular S?O coordination to a tin(II) center. The cis form with the two nonbonded oxygen atoms of the sulfonyl groups on the same side is preferentially obtained.     

火试金-原子吸收光谱法测定锡阳极泥中金、银含量

锡阳极泥是锡冶炼过程中的一种中间产物,其中含有大量的金、银等贵金属。准确测定锡阳极泥中金、银含量有很重要的现实意义。采用火试金法能实现锡阳极泥中金、银含量的连续测定,方法准确度高,精密度好,金、银回收率在97.46%~101.66%,能很好地满足锡阳极泥中高品位金、银的测定。     

Preparation and Electrochemical Properties of Tin–Iron–Carbon Nanocomposite as the Anode of Lithium‐Ion Batteries

Tin–iron–carbon nanocomposite is successfully prepared by a sol–gel method followed by a chemical vapor deposition (CVD) process with acetylene gas as the carbon source. The structural properties, morphology, and electrochemical performances of the nanocomposite are comprehensively studied in comparison with those properties of tin–carbon and iron–carbon nanocomposites. Sheet‐like carbon architecture and different carbon contents are induced thanks to the catalytic effect of iron during CVD. Among three nanocomposites, tin–iron–carbon demonstrates the highest reversible capacity of 800 mA h g^?1 with 96.9 % capacity retention after 50 cycles. It also exhibits the best rate capability with a discharge capacity of 420 mA h g^?1 at a current density of 1000 mA g^?1. This enhanced performance is strongly related to the carbon morphology and content, which can not only accommodate the large volume change, but also improve the electronic conductivity of the nanocomposite. Hence, the tin–iron–carbon nanocomposite is expected to be a promising anode for lithium‐ion batteries.     

二硫化锡纳米片阻变存储器的制备与性能

采用水热法合成了尺寸为50~100 nm的二硫化锡纳米片,并首次以二硫化锡作为阻变层材料的阻变存储器（Cu/PMMA/SnS₂/Ag,PMMA=聚甲基丙烯酸甲酯）,对其阻变性能进行了研究。结果表明： Cu/PMMA/SnS₂/Ag阻变存储器的开关比约10⁵,耐受性2.7×10³。在上述2项性能指标达到较优水平的同时,开态与关态电压分别仅约为0.28与-0.19 V。     

三(3,5-二氟苄基)氯化锡和四(邻氯苄基)锡的合成、晶体结构及量子化学

3,5-二氟苄基氯和邻氯基苄基氯在适当的溶剂中与锡粉反应,合成了三(3,5-二氟苄基)氯化锡(1)和四(邻氯苄基)锡(2),经X射线衍射方法测定了新化合物的晶体结构。化合物1属单斜晶系,空间群为C2/c,晶体学参数:a=1.858 33(11)nm,b=1.140 98(7)nm,c=2.690 06(16)nm,β=109.288(10)°,V=5.383 6(6)nm3,Z=8,Dc=1.532 g·cm~(-3),μ(Mo Kα)=13.61 cm~(-1),F(000)=2 480,R1=0.085 1,wR~2=0.168 1。化合物2属单斜晶系,空间群为P21/m,晶体学参数:a=0.585 54(5)nm,b=1.969 74(18)nm,c=0.857 86(8)nm,β=95.204 0(10)°,V=0.985 34(15)nm3,Z=2,Dc=1.805 g·cm~(-3),μ(Mo Kα)=14.91 cm-1,F(000)=524,R1=0.054 0,wR_2=0.163 9;中心锡原子为畸变四面体构型。对其结构进行量子化学从头计算,探讨了化合物的稳定性、分子轨道能量以及部分前沿分子轨道的组成特征。测定了化合物的热稳定性。     

Liquid crystal-gold nanoparticle composite-modified indium tin oxide (ITO) substrates and their electrochemical characterisation

A simple efficient strategy for the simultaneous synthesis and anchoring of liquid crystal (LC)-stabilised gold nanoparticles (NPs) on indium tin oxide (ITO) substrate is described. A monolayer of 3-mercaptopropyltrimethoxy silane (MPS) compound was formed on ITO and quality of the monolayer was assessed using electrochemical techniques namely cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). Gold NP preparation was carried out on this monolayer-modified substrate (and on bare ITO), in a single-step reaction, simply by drop-casting a solution containing an appropriate amount of chloroauric acid and a LC compound possessing a terminal amino group, on the MPS monolayer-modified substrate and heating (70degree) for 2-3 min.. The LC compound served as a reducing agent as well as a capping ligand. LC-capped NPs were chemically anchored onto the ITO substrate through bonding to thiol moiety of the MPS. The CV and EIS analysis of the MPS monolayer showed a complete blocking behaviour for the electron transfer across the electrode/electrolyte interface confirming the formation of a high-quality dense compact monolayer. On the other hand, upon immobilisation of LC-gold NP composite on self-assembled monolayer-modified ITO substrates, both CV and impedance studies showed a small current indicating the gold NP-mediated electron transfer, thus confirming the successful immobilisation of NPs.     

Electrical,optical, and structural characterization of p‐type N‐doped SnO thin films prepared by thermal oxidation of sputtered SnNx thin films

We present a study of electrical and optical properties of nitrogen‐doped tin oxide thin films deposited on glass by the DC Magnetron Sputtering method. The deposition conditions to obtain p‐type thin films were a relative partial pressure between 7% and 11% (N₂ and/or O₂), a total working pressure of 1.8 mTorr and a plasma power of 30 W. The deposited thin films were oxidized after annealing at 250°C for 30 minutes. X‐ray diffraction results showed that the as‐deposited thin films exhibit a Sn tetragonal structure, and after annealing, they showed SnO tetragonal structure. X‐ray photoelectron spectroscopy results showed the presence of nitrogen in the samples before and after annealing. The measured physical parameters of the thin films were optical band gap between 1.92 and 2.68 eV, resistivity between 0.52 and 5.46 Ωcm, a concentration of p‐type carriers between 10¹⁸ and 10¹⁹ cm^?3, and a Hall mobility between 0.1 and 1.94 cm²V^?1s^?1. These thin films were used to fabricate p‐type thin film transistors.     

火焰原子吸收光谱法直接测定锡阳极泥中的银

建立了火焰原子吸收光谱法(FAAS)测定锡阳极泥中银含量的方法。文章考察了不同的测定介质、酸度对测定结果的影响。实验结果表明在选定条件下,锡阳极泥中的锡、锑、铅等杂质不干扰银的测定。方法加标回收率在99.2%~103%,精密度实验结果表明,相对标准偏差(RSD,n=11)均小于4%。操作过程简单,能满足生产的需要。