Mechanical and optoelectric properties of post-annealed fluorine-doped tin oxide films by ultraviolet laser irradiation

The fluorine-doped tin oxide (FTO) thin film deposited on a soda-lime glass substrate was annealed by a defocus ultraviolet (UV) laser irradiation at ambient temperature. The mechanical and optoelectric properties of FTO films annealed by using the various laser processing parameters were reported. After the FTO films were subjected to laser post-annealing, the microhardness were slightly less but the reduced modulus values were larger than that of unannealed FTO films, respectively. The average optical transmittance in the visible waveband slightly increased with increasing the laser annealing energy and scan speed. Moreover, all the sheet resistance of laser annealed films was less than that of the unannealed ones. We found that the sheet resistance decrease was obviously influenced by annealing. The suitable annealing conditions could maintain the film thickness and relief the internal stress generated in the film preparation process to improve the electrical conductivity via decreasing laser energy or increasing scan speed.     

Studies on the electrochemiluminescent behavior of luminol on indium tin oxide (ITO) glass

The electrochemiluminescence (ECL) of luminol on indium tin oxide (ITO) glass was high even under a low potential around 0.4-0.5 V, which was quite different from other electrodes such as platinum. ITO nanoparticles were synthesized and used in the research on ITO glass in the ECL process. A static interaction between ITO and luminol is confirmed from UV-vis and fluorescence spectra. Then the ECL enhancement can be supposed to originate from the adsorption of luminol on ITO, which facilitated luminol’s oxidization to the excited state, giving out ECL. On the other hand, ITO can catalyze the generation of reactive oxygen species (ROSs), similar to some other nanomaterials, which also favored the ECL enhancement of luminol.     

Atmospheric pressure chemical vapour deposition of fluorine‐doped tin(IV) oxide from fluoroalkyltin precursors

Perfluoroalkytin compounds R_(4−n)Sn(R_f)_n (R = Me, Et, Bu, R_f = C₄F₉, n = 1; R = Bu, R_f = C₄F₉, n = 2, 3; R = Bu, R_f = C₆F₁₃, n = 1) have been synthesized, characterized by ¹H, ¹³C, ¹⁹F and ¹¹⁹Sn NMR, and evaluated as precursors for the atmospheric pressure chemical vapour deposition of fluorine‐doped SnO₂ thin films. All precursors were sufficiently volatile in the range 84–136 °C and glass substrate temperatures of ca 550 °C to yield high‐quality films with ca 0.79–2.02% fluorine incorporation, save for Bu₃SnC₆F₁₃, which incorporated <0.05% fluorine. Films were characterized by X‐ray diffraction, scanning electron microscopy, thickness, haze, emissivity, and sheet resistance. The fastest growth rates and highest quality films were obtained from Et₃SnC₄F₉. An electron diffraction study of Me₃SnC₄F₉ revealed four conformations, of which only the two of lowest abundance showed close F Sn contacts that could plausibly be associated with halogen transfer to tin, and in each case it was fluorine attached to either the γ‐ or δ‐carbon atoms of the R_f chain. Copyright © 2005 John Wiley & Sons, Ltd.     

微波水热合成SnO2微球及其生长机理初探

以结晶四氯化锡( SnC14·5H2O)为原料,聚乙二醇(PEG)为模板剂,采用微波水热法制备了单分散性良好的SnO2微球.通过XRD、SEM、TEM等对产物的结构和形貌进行分析,初步研究了SnO2微球的生长机理并以罗丹明B为模拟污染物研究其光催化活性.结果表明:SnO2微球是由大量细小晶粒堆积而成的,微球直径约1.3 μ,m.PEG分子在超声分散及搅拌作用下形成小球模板,后续的水热反应使生长单元在模板上不断地沉积、长大,进而形成规则SnO2微球.光催化实验表明所制备的SnO2微球具有较高的光催化活性.     

真空蒸镀法制备锡薄膜及其嵌锂电化学性能

采用真空蒸镀法在铜片基底上沉积锡薄膜作为锂离子电池负极材料,对所制备的锡薄膜采用扫描电子显微镜、X射线衍射表征,研究了其表面形貌和组成。 将制备的薄膜在手套箱中组装成CR2032型钮扣式电池,进行电化学测试,研究其电化学性能。 实验结果表明,在相同蒸发时间和基底温度的条件下,随着蒸发功率的增加,沉积的锡颗粒逐渐增大,相应的电化学性能降低。 以蒸发功率200 W、基底温度150 ℃制得的样品粒径为100~200 nm,含有Cu6Sn5合金相,以0.2C倍率充放电循环20周后放电容量达527 mA·h/g。     

有ITO透明导电膜的平面分层介质系统的电磁波性能理论研究

理论研究了有ITO(indium tin oxide)透明导电膜的多层平面分层介质系统的电磁性能，给出的理论曲线和实测曲线符合很好.多层平面分层介质系统的电磁性能与ITO膜(方块电阻为8Ω)所在界面位置和平面分层介质系统层数及各层厚度等有关.优化设计了一种含有ITO透明导电膜的厚度仅7.35mm的四层平面分层介质系统，其在8—18GHz频段内电磁波反射性能很好.作为多层平面分层系统中的ITO导电膜，其方块电阻应低于30Ω，并且越小，其反射性能越好. 关键词： 多层平面介质系统 电磁性能 ITO透明导电膜     

具有三维导电网络结构的锡纳米颗粒/石墨烯纳米片复合电极材料的储镁性能研究

镁二次电池具有安全性高、价格低廉等优点,是一种具有潜在应用前景的高能量密度电池体系.目前,镁二次电池的研究重点之一是寻找合适的电极材料.最近,我们通过水热和热处理相结合的方法成功制备了具有三维导电网络结构的锡纳米颗粒/石墨烯纳米片复合电极材料.研究发现,在石墨烯的三维导电网络片层上,均匀分布了粒径小于100 nm的锡纳米颗粒.将锡纳米颗粒/石墨烯纳米片复合材料作为镁二次电池电极材料,当电流密度为15 mA·g^-1和300 mA·g^-1时,首次放电容量分别达到了545.4 mAh·g^-1和238.8 mAh·g^-1,经过150圈后,容量保持率达到了93%,库伦效率为99%,表现出了较高的电化学活性.研究还发现,镁离子嵌入复合材料中形成镁锡合金,当镁离子脱出后,再次形成锡纳米颗粒/石墨烯纳米片复合电极材料,镁离子的脱出和嵌入具有很高的可逆性.这对未来研究设计高性能镁离子电极材料具有十分重要的意义.     

Hydridoorganostannylene Coordination: Group 4 Metallocene Dichloride Reduction in Reaction with Organodihydridostannate Anions

Organodihydridoelement anions of germanium and tin were reacted with metallocene dichlorides of Group 4 metals Ti, Zr and Hf. The germate anion [Ar*GeH₂]⁻ reacts with hafnocene dichloride under formation of the substitution product [Cp₂Hf(GeH₂Ar*)₂]. Reaction of the organodihydridostannate with metallocene dichlorides affords the reduction products [Cp₂M(SnHAr*)₂] (M=Ti, Zr, Hf). Abstraction of a hydride substituent from the titanium bis(hydridoorganostannylene) complex results in formation of cation [Cp₂M(SnAr*)(SnHAr*)]⁺ exhibiting a short Ti–Sn interaction. (Ar*=2,6-Trip₂C₆H₃, Trip=2,4,6-triisopropylphenyl).     

镀锡层上钛-磷复合体系钝化膜的制备与表征

通过钛盐与磷酸盐体系复配的方法,在镀锡层表面得到了一种钛-磷复合体系钝化膜. 利用扫描电子显微镜(SEM)、X射线光电子能谱 (XPS)、盐雾试验、Tafel极化曲线和EIS交流阻抗谱测试等方法,研究了所得钝化膜的表面形貌、组成与耐蚀性能. 结果表明,得到的钝化膜层的主要组成成分为Ti₃(PO₄)₄nH₂O和TiO₂,在镀锡层表面结晶细致并有封孔的作用,因此有很好的耐蚀性能.