Electrical Characterization of Metal-Insulator-Metal Capacitors with Atomic-Layer-Deposited HfO2 Dielectrics for Radio Frequency Integrated Circuit Application

Metal-insulator-metal （MIM） capacitors with atomic-layer-deposited HfO2 dielectric and TaN electrodes are investigated for rf integrated circuit applications. For 12nm HfO2, the fabricated capacitor exhibits a high capacitance density of 15.5fF/μm2 at 100kHz, a small leakage current density of 6.4 × 10^-9 A/cm^2 at 1.8V and 125℃, a breakdown electric field of 2.6 MV//cm as well as voltage coefficients of capacitance （VCCs） of 2110ppm/V^2 and -824 ppm/V at 100kHz. Further, it is deduced that the conduction mechanism in the high field range is dominated by the Poole-Frenkel emission, and the conduction mechanism in the low field range is possibly related to trap-assisted tunnelling. Finally, comparison of various HfO2 MIM capacitors is present, suggesting that the present MIM capacitor is a promising candidate for future rf integrated circuit application.     

强非零线性系统的刻划

本文介绍了强非零线性系统及其判定定理,并得到了某特殊情形下强非零矩阵与可逆矩阵的关系。     

氢谱在甾醇类化合物定量和纯度分析中的应用

用^1HNMR谱可定量确定繁茂膜海绵(Hymeniacidon perleve)中分离得到的结构类似的甾醇类化合物的含量，这种方法是对鉴定分析组成复杂而性质很相近的天然甾醇化合物的新思路。     

三波长-分光光度法测定黑沙蒿中的总黄酮

以野樱素为对照品、 AlCl3作显色剂,建立了三波长-分光光度法测定黑沙蒿中主要化学成分黄酮类化合物的方法.该方法可校正混浊背景倾斜度的影响,并能消除重叠吸收曲线的干扰.方法的线性范围为1.12～13.44 μg/mL,相关系数r=0.9999,适用于植物中总黄酮的测定.     

钙和钒离子对钒-溴过氧化物酶催化 H2O2 氧化环己烯反应的影响

 在溴化钾存在下, 大型海洋藻类珊瑚藻的钒-溴过氧化物酶 (V-BPO) 可在常温下催化 H₂O₂ 环氧化环己烯生成环氧环己烷. 通过用含 1.0 mmol/L 钒离子和 1.0 mmol/L 钙离子的缓冲溶液透析 V-BPO, 用恒流泵向反应体系中连续添加 H₂O₂, 并优化其它反应条件, 可提高该催化反应时空收率. 在优化的反应条件下, 产物环氧环己烷的时空收率为 4.79 g/(h•L), 对 H₂O₂ 的收率为 74%, 均比文献最高值提高了 78%.     

Band Structures of Metal-Oxide Capped Graphene： A First Principles Study

We perform a first-principles calculation based on density functional theory to investigate the interface between single layer graphene and metal oxides. Our study reveals that the monolayer graphene becomes semiconducting by single crystal SiO2 and Al2O3 contact, with energy gaps to - 0.9 and - 1.8 eV, respectively. We find the gap originates from the breakage of π bond integrity, whose extent is related to the interface atom configuration. We believe that our results highlight a promising direction for the feasibility to apply large scale graphene layers as building blocks in future electronics devices.     

Study on electrical defects level in single layer two-dimensional Ta_2O_5

Two-dimensional atomic-layered material is a recent research focus, and single layer Ta_2O_5 used as gate dielectric in field-effect transistors is obtained via assemblies of Ta_2O_5 nanosheets. However, the electrical performance is seriously affected by electronic defects existing in Ta_2O_5. Therefore, spectroscopic ellipsometry is used to calculate the transition energies and corresponding probabilities for two different charged oxygen vacancies, whose existence is revealed by x-ray photoelectron spectroscopy analysis. Spectroscopic ellipsometry fitting also calculates the thickness of single layer Ta_2O_5,exhibiting good agreement with atomic force microscopy measurement. Nondestructive and noncontact spectroscopic ellipsometry is appropriate for detecting the electrical defects level of single layer Ta_2O_5.     

复杂背景下红外弱小目标检测算法研究

复杂背景下低信噪比弱小目标的检测是红外预警系统中的重点和难点。为解决红外图像中杂波干扰多、目标信噪比低等问题,提出一种非线性空间滤波的目标检测方法。该算法在传统线性空间滤波算法的基础上,通过对预测点周围4个象限的背景灰度值进行计算,并动态地调节阈值,以达到突出小目标的目的。试验结果表明:当背景包含较多复杂因素时,采用非线性空间滤波的检测方法可有效地抑制杂波,实现弱小目标的提取,与线性滤波算法结果相比较,虚警数降低了3/4,且易于工程实现。     

ANALYSIS OF THE X-RAY PHOTOELECTRON SPECTRA OF a-SiOCF FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION

The preparation of a-SiOCF films from Si(OC₂H₅)₄, C₄F₈ and/or Ar using the plasma-enhanced chemical vapour deposition method is reported. The chemical bonding structures of the films are analysed by x-ray photoelectron spectroscopy (XPS). In the case of the films deposited from the mixture with and without Ar, the configurations of F-Si-O-Si, Si-OH, Si-O-Si, C-CF and C-F are contained. However, there is also the C-C configuration in the film prepared from the mixture with Ar. Moreover, it is found that the photoelectron peaks of Si 2p, O 1s and F 1s for the film deposited from the feeding gas with Ar show the same shift of about 1eV toward high binding energy in comparison with those for the film prepared from the feeding gas without Ar. No evidence reveals the presence of an Si-C bond in the films.     

氯参与的化学气相淀积金刚石的热力学分析

用非平衡热力学耦合模型研究了金刚石在CHCl体系中的生长,计算所得CHCl体系的金刚石生长的相图与大量实验结果符合良好.通过热力学分析讨论了氯的添加对提高金刚石薄膜生长速率及其质量的影响以及降低淀积温度的作用.