Fabrication of large-scale graphene/2D-germanium heterostructure by intercalation

We report a large-scale, high-quality heterostructure composed of vertically-stacked graphene and two-dimensional(2D) germanium.The heterostructure is constructed by the intercalation-assisted technique.We first synthesize large-scale,single-crystalline graphene on Ir(111) surface and then intercalate germanium at the interface of graphene and Ir(111).The intercalated germanium forms a well-defined 2D layer with a 2 × 2 superstructure with respect to Ir(111).Theoretical calculations demonstrate that the 2D germanium has a double-layer structure.Raman characterizations show that the 2D germanium effectively weakens the interaction between graphene and Ir substrate, making graphene more like the intrinsic one.Further experiments of low-energy electron diffraction, scanning tunneling microscopy, and x-ray photoelectron spectroscopy(XPS) confirm the formation of large-scale and high-quality graphene/2D-germanium vertical heterostructure.The integration of graphene with a traditional 2D semiconductor provides a platform to explore new physical phenomena in the future.     

Electronic structures and coronene on Ru（0001）： vibrational properties of first-principles study

We calculate the configurations,electronic structures,vibrational properties at the coronene/Ru(0001) interface,and adsorption of a single Pt atom on coronene/Ru(0001) based on density functional theory calculations.The geometric structures and electronic structures of the coronene on Ru(0001) are compared with those of the graphene/Ru(0001).The results show that the coronene/Ru(0001) can be a simplified model system used to describe the interaction between graphene and ruthenium.Further calculations of the vibrational properties of coronene molecule adsorbed on Ru(0001) suggest that the phonon properties of differently corrugated regions of graphene on Ru(0001) are different.This model system is also used to investigate the selective adsorption of Pt atoms on graphene/Ru(0001).The configurations of Pt on coronene/Ru(0001) with the lowest binding energy give clues to explain the experimental observation that a Pt cluster selectively adsorbs on the second highest regions of graphene/Ru(0001).This work provides a simple model for understanding the adsorption properties and vibrational properties of graphene on Ru(0001) substrate.     

Effect of Metal Contact and Rapid Thermal Annealing on Electrical Characteristics of Graphene Matrix

Development of graphene field effect transistors(GFETs) faces a serious challenge of graphene interface to the dielectric material. A single layer of intrinsic graphene has an average sheet resistance of the order of 1-5 kΩ/□.The intrinsic nature of graphene leads to higher contact resistance yielding into the outstanding properties of the material. We design a graphene matrix with minimized sheet resistance of 0.185 Ω/□ with Ag contacts. The developed matrices on silicon substrates provide a variety of transistor design options for subsequent fabrication.The graphene layer is developed over 400 nm nickel in such a way as to analyze hypersensitive electrical properties of the interface for exfoliation. This work identifies potential of the design in the applicability of few-layer GFETs with less process steps with the help of analyzing the effect of metal contact and post-process annealing on its electrical fabrication.     

Quantum spin Hall and quantum valley Hall effects in trilayer graphene and their topological structures

The present study pertains to the trilayer graphene in the presence of spin orbit coupling to probe the quantum spin/valley Hall effect. The spin Chern-number C_s for energy-bands of trilayer graphene having the essence of intrinsic spin–orbit coupling is analytically calculated. We find that for each valley and spin, C_s is three times larger in trilayer graphene as compared to single layer graphene. Since the spin Chern-number corresponds to the number of edge states,consequently the trilayer graphene has edge states, three times more in comparison to single layer graphene. We also study the trilayer graphene in the presence of both electric-field and intrinsic spin–orbit coupling and investigate that the trilayer graphene goes through a phase transition from a quantum spin Hall state to a quantum valley Hall state when the strength of the electric field exceeds the intrinsic spin coupling strength. The robustness of the associated topological bulk-state of the trilayer graphene is evaluated by adding various perturbations such as Rashba spin–orbit(RSO) interaction αR, and exchange-magnetization M. In addition, we consider a theoretical model, where only one of the outer layers in trilayer graphene has the essence of intrinsic spin–orbit coupling, while the other two layers have zero intrinsic spin–orbit coupling.Although the first Chern number is non-zero for individual valleys of trilayer graphene in this model, however, we find that the system cannot be regarded as a topological insulator because the system as a whole is not gaped.     

Thermoelectric-transport in metal/graphene/metal hetero-structure

We investigate the thermoelectric-transport properties of metal/graphene/metal hetero-structure. We use a single band tight-binding model to present the two-dimensional electronic band structure of graphene. Using the Landauer--Butticker formula and taking the coupling between graphene and the two electrodes into account, we can calculate the thermoelectric potential and current versus temperature. It is found that in spite of metal electrodes, the carrier type of graphene determines the electron motion direction driven by the difference in temperature between the two electrodes, while for n type graphene, the electrons move along the thermal gradient, and for p type graphene, the electrons move against the thermal gradient.     

Simulation of Electronic Total-Reflection Effect in a Graphene Junction

We investigate theoretically the electron-reflection phenomenon in a graphene n＋n junction based on electron optics, where the local potential in the left n ＋ region is higher than that in the right n region. It is demonstrated numerically that electrons emitting from a point source in the n ＋ region will experience total internal reflection through the interface of the junction. The reflection becomes stronger and the transmission becomes weaker with decrease of the local potential in the right graphene ribbon. It is also found that when a nonideal interface is considered in the junction, the electron-reflection effect is enhanced due to interracial backseattering.     

Boundary graphene layer effect on surface plasmon oscillations in a quantum plasma half-space

The effect of graphene on unique features of surface plasmon-polariton excitations near the interface of vacuum and quantum plasma half-space is explored using a quantum hydrodynamic model including the Fermi electron temperature and the quantum Bohm potential together with the full set of Maxwell equations.It is found that graphene as a conductive layer significantly modifies the propagation properties of surface waves by making a change on the corresponding wave dispersion relation.It is shown that the presence of graphene layer on the interface of vacuum and plasma leads to a blue-shift in the surface Plasmon frequency.The results of present study must be contributed to the modern electronic investigations.     

Edge effect and interface confinement modulated strain distribution and interface adhesion energy in graphene/Si system

In order to clarify the edge and interface effect on the adhesion energy between graphene(Gr)and its substrate,a theoretical model is proposed to study the interaction and strain distribution of Gr/Si system in terms of continuum medium mechanics and nanothermodynamics.We find that the interface separation and adhesion energy are determined by the thickness of Gr and substrate.The disturbed interaction and redistributed strain in the Gr/Si system induced by the effect of surface and interface can make the interface adhesion energy decrease with increasing thickness of Gr and diminishing thickness of Si.Moreover,our results show that the smaller area of Gr is more likely to adhere to the substrate since the edge effect improves the active energy and strain energy.Our predictions can be expected to be a guide for designing high performance of Grbased electronic devices.     

Modulating magnetism of nitrogen-doped zigzag graphene nanoribbons

We present a study of electronic properties of zigzag graphene nanoribbons （ZGNRs） substitutionally doped with nitrogen atoms at a single edge by first principle calculations. We find that the two edge states near the Fermi level sepa- rate due to the asymmetric nitrogen-doping. The ground states of these systems become ferromagnetic because the local magnetic moments along the undoped edges remain and those along the doped edges are suppressed. By controlling the charge-doping level, the magnetic moments of the whole ribbons are modulated. Proper charge doping leads to interest- ing half-metallic and single-edge conducting ribbons which would be helpful for designing graphene-nanoribbon-based spintronic devices in the future.     

Spin-polarized transport in a normal/ferromagnetic/normal zigzag graphene nanoribbon junction

We investigate the spin-dependent electron transport in single and double normal/ferromagnetic/normal zigzag graphene nanoribbon (NG/FG/NG) junctions.The ferromagnetism in the FG region originates from the spontaneous magnetization of the zigzag graphene nanoribbon.It is shown that when the zigzag-chain number of the ribbon is even and only a single transverse mode is actived,the single NG/FG/NG junction can act as a spin polarizer and/or a spin analyzer because of the valley selection rule and the spin-exchange field in the FG,while the double NG/FG/NG/FG/NG junction exhibits a quantum switching effect,in which the on and the off states switch rapidly by varying the cross angle between two FG magnetizations.Our findings may shed light on the application of magnetized graphene nanoribbons to spintronics devices.     

Search for strangeness changing neutral currents induced by neutrinos in gargamelle

A sample of 9930 neutrino neutral current interactions has been examined for single strange particle production. No signal in the channels νN → νγX and νN → ν|gS⁰X, where X means non-strange hadrons, has been found. This yields an upper limit of 5.4 × 10^?3 to a 90% confidence level on the ratio [(ν → νΓX) + (ν → νΣ⁰X)]/[ν → ν + anything]     

First-Principles Study on the Electronic Structures for Y^3＋：PbWO4 Crystals

The possible defect models of Y^3＋：PbWO4 crystals are discussed by defect chemistry and the most possible substituting positions of the impurity Y^3＋ ions are studied by using the general utility lattice program （GULP）. The calculated results indicate that in the lightly doped Y^3＋ ：PWO crystal, the main compensating mechanism is [2Ypb^＋ ＋ VPb^2-], and in the heavily doped Y^3＋ ：PWO crystal, it will bring interstitial oxygen ions to compensate the positive electricity caused by YPb^＋, forming defect clusters of [2Ypb^＋ ＋Oi^2-] in the crystal. The electronic structures of Y3＋ ：PWO with different defect models are calculated using the DV-Xα method. It can be concluded from the electronic structures that, for lightly doped cases, the energy gap of the crystal would be broadened and the 420nm absorption band will be restricted; for heavily doped cases, because of the existence of interstitial oxygen ions, it can bring a new absorption band and reduce the radiation hardness of the crystal.     

Micro-Photoluminescence Confocal Mapping of Single V-Grooved GaAs Quantum Wire

We perform the micro-photoluminescence measurement at low temperatures and a scanning optical mapping with high spatial resolution of a single V-grooved GaAs quantum wire modified by the selective ion-implantation and rapid thermally annealing. While the mapping shows the luminescences respectively from the quantum wires and from quantum well areas between quantum wires in general, the micro-photoluminescence at liquid He temperatures reveals a plenty of spectral structures of the PL band for a single quantum wire. The spectral structures are attributed to the inhomogeneity and non-uniformity of both the space structure and compositions of real wires as well as the defects nearby the interface between quantum wire and surrounding quantum well structures. All these make the excitons farther localized in quasi-zero-dimensional quantum potential boxes related to these non-uniformity and/or defects. The results also demonstrate the ability of micro-photoluminescence measurement and mapping for the characterization of both opto-electronic and structural properties of real quantum wires.     

Instability of Solution of Phase Retrieval in Direct Diffraction Phase-Contrast Imaging with Partially Coherent X-Ray Source

The theoretical model of direct diffraction phase-contrast imaging with partially coherent x-ray source is expressed by an operator of multiple integral. It is presented that the integral operator is linear. The problem of its phase retrieval is described by solving an operator equation of multiple integral. It is demonstrated that the solution of the phase retrieval is unstable. The numerical simulation is performed and the result validates that the solution of the phase retrieval is unstable.     

Chemical Potential Dependence of Two-Quark Condensates

By adopting the background field method, the response of the dressed quark propagator to the presence of finite chemical potential is analysed up to the second order. From this, we obtain a model-independent formula for the chemical potential dependence （up to the second order） of the in-medium two-quark condensate and show by both Lorentz covariance arguments and explicit calculations that the O（μ） contribution to the in-medium two-quark condensate vanishes identically.     

Application of Electron-Shelving Detection via 423 nm Transition in Calcium-Beam Optical Frequency Standard

A new scheme of small compact optical frequency standard based on thermal calcium beam with application of 423 nm shelving detection and sharp-angle velocity selection detection is proposed. Combining these presented techniques, we conclude that a small compact optical frequency standard based on thermal calcium beam will outperform the commercial caesium-beam microwave dock, like the 5071 Cs clock （from Hp to Agilent, now Symmetricom company）, both in accuracy and stability.     

Effect of electron-beam irradiation on the magnetic properties of Ga1−xMnxAs thin films grown on GaAs (100) substrates

The effect of electron-beam irradiation on the magnetic properties of (Ga_1−xMn_x)As thin films grown on GaAs (100) substrates by using molecular beam epitaxy was investigated. The ferromagnetic transition temperature (T_c) of the annealed (Ga_0.933Mn_0.067)As thin films was 160 K. The T_c value for the as-grown (Ga_0.933Mn_0.067)As thin films drastically decreased with increasing electron-beam current. This significant decrease in the T_c value due to electron-beam irradiation originated from the transformation of Mn substituted atoms, which contributed to the ferromagnetism, into Mn interstitials or Mn-related clusters. These results indicate that the magnetic properties of (Ga_1−xMn_x)As thin films grown on GaAs (100) substrates are significantly affected by electron-beam irradiation.     

Locality Violation with Spin-Type W States without Using Inequalities

Using even and odd coherent states, we define a new state, which is called the spin-type W state. With the spin-type W states, we provide a new scheme for testing fundamental aspects of quantum mechanics and refuting local hidden variable theory without using inequalities. Finally, a scheme for preparing the spin-type W states, and discussion of experimental possibility and the effect of the measurement on physical observables due to a close orthogonality of the two coherent states are given.     

Quantum Entanglement in a System of Two Spatially Separated Atoms Coupled to the Thermal Reservoir

We study quantum entanglement between two spatially separated atoms coupled to the thermal reservoir. The influences of the initial state of the system, the atomic frequency difference and the mean number of the thermal field on the entanglement are examined. The results show that the maximum of the entanglement obtained with nonidentical atoms is greater than that obtained with identical atoms. The degree of entanglement is progressively decreased with the increase of the thermal noise. Interestingly, the two atoms can be easily entangled even when the two atoms are initially prepared in the most mixed states.