Equivalent oxide thickness scaling of Al2O3/Ge metal-oxide-semiconductor capacitors with ozone post oxidation

Aluminum-oxide films deposited as gate dielectrics on germanium （Ge） by atomic layer deposition were post oxidized in an ozone atmosphere. No additional interfacial layer was electron microscopy and X-ray photoelectron spectroscopy detected by the high-resolution cross-sectional transmission measurements made after the ozone post oxidation （OPO） treatment. Decreases in the equivalent oxide thickness of the OPO-treated Al2O3/Ge MOS capacitors were confirmed. Furthermore, a continuous decrease in the gate leakage current was achieved with increasing OPO treatment time. The results can be attributed to the film quality having been improved by the OPO treatment.     

Preparation of Ultra Low- k Porous SiOCH Films from Ring-Type Siloxane with Unsaturated Hydrocarbon Side Chains by Spin-On Deposition

An ultra-low-dielectric-constant （ultra low-k, or ULK） porous SiOCH film is prepared using a single ring-type siloxane precursor of the 2,4,6,8-tetravinyl-2,4,6,8-tetramethylcyclotetrasiloxane by means of spin-on deposition, followed by crosslinking reactions between the precursor monomers under UV irradiation. The as-prepared film has an ultra low k of 2.41 at 1 MHz due to incorporation of pores and hydrocarbon crosslinkages, a leakage current density of 9.86×10-7 A/cm2 at 1 MV/cm, as well as a breakdown field strength of ~1.5 MV/cm. Further, annealing at 300°C results in lower k （i.e., 1.94 at 1 MHz）, smaller leakage current density （2.96×10-7 A/cm2 at 1 MV/cm） and higher breakdown field strength （about 3.5 MV/cm）, which are likely caused by the short-ranged structural rearrangement and reduction of defects in the film. Finally, the mechanical properties and surface morphology of films are also evaluated after different temperature annealing.     

超高效液相色谱-串联质谱法测定土壤中18种全氟和多氟烷基化合物

该文建立了适用于土壤中18种全氟和多氟烷基化合物(PFASs)的固相萃取/超高效液相色谱-串联质谱检测方法,包括14种全氟羧酸、3种全氟磺酸以及1种全氟醚羧酸.通过比较土壤粒径、超声温度、超声时间、固相萃取柱种类以及洗脱液浓度对PFASs提取效率的影响,确定最优前处理条件为:土壤样品过60目筛,在40℃下用甲醇超声提取...     

Robust Low Voltage Program-Erasable Cobalt-Nanocrystal Memory Capacitors with Multistacked Al2O3/HfO2/Al2O3 Tunnel Barrier

A n atomic-layer-deposited Al2O3/HfO2/Al2O3 （A/H/A） tunnel barrier is in vestigated for Co nanocrystal memory capacitors. Compared to a single Al2O3 tunnel barrier, the A/H/A barrier can significantly increase the hysteresis window, i.e., an increase by 9 V for ±12 V sweep range. This is attributed to a marked decrease in the energy barriers of charge injections for the A/H/A tunnel barrier. Further, the Co-nanocrystal memory capacitor with the A/H/A tunnel barrier exhibits a memory window as large as 4.1 V for 100 μs program/erase at a low voltage of ±7 V, which is due to fast charge injection rates, i.e., about 2.4× 10^16 cm^-2 s^-1 for electrons and 1.9× 1016 cm^-2 s^-1 for holes.     

Ta和TaN底电极对原子层淀积HfO2介质MIM电性能的影响

以Ta,TaN为衬底,采用原子层淀积方法制备高介电常数HfO₂介质,比较研究了不同衬底电极对金属-绝缘体-金属（MIM）电容的性能影响.结果表明,采用TaN底电极能够获得较高的电容密度和较小的电容电压系数（VCC）,在1MHz下的其电容密度为7.47fF/μm²,VCC为356ppm/V²和493ppm/V,这归因于TaN底电极与HfO₂介质之间良好的界面特性.两种电容在3?V时漏电流为5×10^-8关键词： 高介电常数 MIM电容 2薄膜')" href="#">HfO₂薄膜 电极     

High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO2 heterojunction charge trapping stack

Amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor (TFT) memories with novel p-SnO/n-SnO₂ heterojunction charge trapping stacks (CTSs) are investigated comparatively under a maximum fabrication temperature of 280 ℃. Compared to a single p-SnO or n-SnO₂ charge trapping layer (CTL), the heterojunction CTSs can achieve electrically programmable and erasable characteristics as well as good data retention. Of the two CTSs, the tunneling layer/p-SnO/n-SnO₂/blocking layer architecture demonstrates much higher program efficiency, more robust data retention, and comparably superior erase characteristics. The resulting memory window is as large as 6.66 V after programming at 13 V/1 ms and erasing at -8 V/1 ms, and the ten-year memory window is extrapolated to be 4.41 V. This is attributed to shallow traps in p-SnO and deep traps in n-SnO₂, and the formation of a built-in electric field in the heterojunction.     

酸性环境下析氧反应Ir、Ru贵金属电催化剂的研究进展

水电解法是利用可再生能源生产氢气的最有效、最环保的方法之一。质子交换膜（PEM）水电解槽对可再生能源的储存和转化具有重要意义,与碱性电解水相比,具有设计紧凑、电压效率高和气体纯度高等优点。然而,阳极电催化剂的低效率、不稳定性和高成本阻碍了PEM水电解。许多析氧反应（OER）电催化剂在恶劣的酸性环境下,在OER电位作用下容易发生溶解或表面结构转变,最终导致催化性能急剧下降,因此酸性OER是阻碍PEM水电解槽实际应用的主要因素之一。高效、经济和耐用的电催化剂可降低OER的高动力学势垒,加速其反应动力学。迄今为止,Ir和Ru基纳米材料仍然代表着最先进的催化剂,已经设计和合成了多种先进的贵金属电催化剂,以增强酸性OER性能。本文综述了近5年性能优异的酸性OER新型电催化剂的研究进展。首先,讨论了对酸性OER的基本认识,包括其反应机理。在此基础上,对贵金属Ir、Ru单原子、合金和氧化物等方面综述了贵金属酸性OER电催化剂的设计和合成进展。最后,从反应机理研究和更高效的电催化剂设计等方面对酸性OER的未来发展提出了展望。     

探讨价层电子对互斥理论的电子对数计算简易方法与应用

针对价层电子对互斥理论中关于卤素、氧族等p区非金属元素作为配位原子提供电子数为1、0等未做明确说明的问题,通过数学公式推导解释了数字背后的意义,完善了将中心原子和配位原子按不同计算规则、更简便地计算价层电子对数的方法。应用推导出的简便价层电子对计算规则探讨了一种判断链状结构有机小分子的杂化类型的新方法,并讨论了长周期p区非金属元素的最外层s电子的钻穿作用对价层电子总数的影响以及利用电负性差异比较共价型分子键角大小时需要考虑多重键的影响等,对VSEPR法的应用做了有益补充。     

激光空间相干性对照明均匀性的影响

 研究了激光相干性对照明均匀性的影响，为照明激光器的选择提供了理论参考。其中，部分相干高斯光束分解为模式间相互独立的厄米-高斯光束的迭加。采用相位屏的近似处理方法对激光通过大气湍流的传输进行计算模拟。数值模拟的结果表明：当照明光束的空间相干性降低时，其照明均匀度逐步提高。因此对于照明激光器而言，选择空间相干性较差的激光器对其照明均匀度更加有益。     

4×2×3阵列式放大器参数测量系统优化设计

采用软边光阑和多级空间滤波器组合技术实现了光束的空间整形和等像面传输，利用Fresnel光束传输计算程序对4×2×3阵列式放大器参数测量系统进行了优化设计，分析了空间滤波器中小孔尺寸对光束波面传输的影响，并对优化设计结果进行了分析和讨论，所用方法和所得结论对高功率固体激光放大系统的设计有应用意义。