Domain structures of Nd13Fe80B7 magnets during HDDR process

The domain structures of Nd13Fe80B7 alloy at different stages of the HDDR process have been revealed using a magnetic force microscope. In the as-cast samples, the columnar crystals with easy axis perpendicular to one another are clearly characterized by their different domain structures. For the insufficient and sufficient HD treatment, an obvious change of domain structure occurs, which is related to the variation of composition and crystalline microstructure during the HD process. And for the samples after sufficient DR processing, it is confirmed that the configuration of the columnar crystals is retained by the detected domain structures.     

Effect of solution temperature and cooling rate on microstructure and mechanical properties of laser solid forming Ti-6Al-4V alloy

The effect of solution temperature and cooling rate on microstructure and mechanical properties of laser solid forming (LSF) Ti-6Al-4V alloy is investigated.The samples are solutions treated at 900,950,and 1000°C,followed by water quenching,air cooling,and furnace cooling,respectively.It is found that the cooling rate of solution treatment has a more important effect on the microstructure in comparison with the solution temperature.The martensite α'formed during water quenching results in the higher hardnes...     

Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN

The optical quenching of photoconduetivity under dual illumination in GaN samples with different resistivity is investigated to reveal the variation of deep levels. The samples are grown by metal organic chemical vapour deposition without intentional doping. Quenching bands centered at 1.35 eV, 1.55 eV, 1.98eV, and 2.60 eV are observed. It is found that the 1.98eV quenching band is dominated in all the samples and the 2.60eV band is observed only in the high-resistivity samples. The possible defect levels responsible for the quenching bands and the origin of different quenching behaviour at 2.60eV are discussed. It is suggested that the defect level responsible for quenching at 2.60 eV plays an important role for the enhancement of resistivity.     

Effect of solution temperature and cooling rate on microstructure and mechanical properties of laser solid forming Ti-6A1-4V alloy

The effect of solution temperature and cooling rate on microstructure and mechanical properties of laser solid forming （LSF） Ti-6A1-4V alloy is investigated. The samples are solutions treated at 900, 950, and 1000 ℃, followed by water quenching, air cooling, and furnace cooling, respectively. It is found that the cooling rate of solution treatment hasα more important effect on the microstructure in comparison with the solution temperature. The martensite α formed during water quenching results in the higher hardness and tensile strength but lower ductility of samples. With decreasing the cooling rate and increasing the solution temperature, the width of primary α laths increases, and the aspect ratio and volume fraction decrease, which make the hardness and tensile strength decrease and the ductility increase.     

Semi-quantitative study on the Staebler--Wronski effect of hydrogenated amorphous silicon films prepared with HW-ECR-CVD system

The method of numerical simulation is used to fit the relationship between the photoconductivity in films and the illumination time. The generation and process rule of kinds of different charged defect states during illumination are revealed. It is found surprisingly that the initial photoconductivity determines directly the total account of photoconductivity degradation of sample.     

Structural, Optical and Electrical Properties of Hydrogen-Doped Amorphous GaAs Thin Films

Amorphous CaAs films are deposited on substrates of quartz glass and sificon by rf magnetron sputtering technique in different gas ambient. First, the amorphous structure of the prepared samples is identified by x-ray diffraction. Second, analysis by radial distribution function and pair correlation function method is established to characterize the microstructure of the samples. Then, the content and bond type of hydrogen are analysed using Fourier transform infrared absorption spectroscopy. It is found that the bonded hydrogen content increases with increasing partial pressure PH of H2. However, the hydrogen content saturates at PH 〉 1 × 10^-1 Pa. Hydrogen addition shills the optical absorption edge to higher energy, decreases the dark conductivity and improves the photo-sensitivity. The optical gap, dark conductivity and photo-sensitivity of the films are dependent on the bonded hydrogen content. These results demonstrate that hydrogen has obvious passivation effects on rf sputtered amorphous GaAs thin films.     

Influence of UV-Irradiation on Latent Tracks in Polyethylene Terephthalate Films

Polyethylene terephthalate(PET) films in thickness of 12/μm are irradiated by Xe and Au ions at the energies of9.5 and 11.4MeV/u and with the ion fluence from 5 × 10~9 cm~(-2) to 1 × 10~(11) cm~(-2).After irradiation,ultra-violet lights are used to illuminate the samples with latent trades at the wavelength of 365 nm with flux density of4.2mW/cm~(-2).UV-irradiation effects on tracked PET are investigated by the UV-vis spectrum and positron annihilation lifetime spectroscopy(PALS).It is found that carbonaceous clusters in PET films are generated by ion irradiation and decomposed with UV illumination by calculating the optical energy band gap E_g in the UV-vis spectrum.The free volumes behave differently in track and bulk after UV illumination.In our experiment,the PALS results show an increase in radius and density of free volume in tracked PET films after UV treatment,which indicates an expansion in radius of latent tracks.     

Assessing total differences variations in color,for effective samples having coarseness,and glint

Effect coatings have the unique property of large change of appearance under different viewing conditions. This results in quality control problems of related products. In this letter, samples of metallic panels with effect coatings are visually assessed and measured. Based on experimental results, we propose formulae to predict precisely the total differences of effective samples in terms of variations in color, coarseness, and glint. Under diffused illumination, the total difference formula includes color difference and coarseness difference. Under directional illumination, the total difference formula includes color difference and glint difference.     

Oxygen ion conductivity of La_(0.8)Sr_(0.2)Ga_(0.83)Mg_(0.17-x)Co_xO_(3-δ) synthesized by laser rapid solidification

Materials La0.8Sr0.2Ga0.83Mg0.17-xCoxO3-δ with x = 0, 0.05, 0.085, 0.10, and 0.15 are synthesized by laser rapid solidification. It is shown that the samples prepared by laser rapid solidification give rise to unique spear-like or leaf-like microstructures which are orderly arranged and densely packed. Their electrical properties each show a general dependence of the Co content and the total conductivities of La 0.8 Sr 0.2 Ga 0.83 Mg 0.085 Co 0.085 O 3-δ prepared by laser rapid solidification are measured to be 0.067, 0.124, and 0.202 S·cm -1 at 600, 700, and 800℃, respectively, which are much higher than by conventional solid state reactions. Moreover, the electrical conductivities each as a function of the oxygen partial pressure are also measured. It is shown that the samples with the Co content values ≤ 8.5 mol% each exhibit basically ionic conduction while those for Co content values ≥ 10 mol % each show ionic mixed electronic conduction under oxygen partial pressures from 10 -16 atm (1 atm = 1.01325×10 5 Pa) to 0.98 atm. The improved ionic conductivity of La 0.8 Sr 0.2 Ga 0.83 Mg 0.085 Co 0.085 O 3-δ prepared by laser rapid solidification compared with by solid state reactions is attributed to the unique microstructure of the sample generated during laser rapid solidification.     

Oxygen ion conductivity of Lao.sSro.2Gao.s3Mgo.17-xCoxO3-δ synthesized by laser rapid solidification

Materials Lao.8Sro.2Gao.83Mgo.17_xCox03_6 with x = 0, 0.05, 0.085, 0.10, and 0.15 are synthesized by laser rapid solidification. It is shown that the samples prepared by laser rapid solidification give rise to unique spear-like or leaf-like microstructures which are orderly arranged and densely packed. Their electrical properties each show a general depen dence of the Co content and the total conductivities of Lao.8Sro.2Gao.83Mgo.085Coo.08503_6 prepared by laser rapid solidification are measured to be 0.067, 0.124, and 0.202 S.cm-1 at 600, 700, and 800 ℃, respectively, which are much higher than by conventional solid state reactions. Moreover, the electrical conductivities each as a function of the oxy gen partial pressure are also measured. It is shown that the samples with the Co content values 〈 8.5 mol% each exhibit basically ionic conduction while those for Co content values 〉 10 mol % each show ionic mixed electronic conduction under oxygen partial pressures from 10-16 atm （1 atm = 1.01325 x 105 Pa） to 0.98 atm. The improved ionic conductivity of Lao.sSro.2Gao.83Mgo.085Coo.08503 prepared by laser rapid solidification compared with by solid state reactions is attributed to the unique microstructure of the sample generated during laser rapid solidification.     

Microstructure related photoluminescence in a-CNx films deposited by reactive rf magnetron sputtering

We investigated the photoluminescence (PL) properties of carbon nitride films (CN_x) deposited by rf magnetron sputtering and compared them to their microstructure depending on the target self-bias. While many of the data are compatible with ‘a-C:H like’ PL properties the observed variation of the PL efficiency η with respect to the target bias cannot be easily explained by the standard models. It is suggested that the observed variation of η is rather dominated by a change in microstructure which depends on the bombardment intensity during growth than by the concentration of non-radiative centres.     

The effect of illumination on dark conductivity and photoconductivity of hydrogenated amorphous silicon layered films

It is established that both the amplitude and temperature dependence of dark conductivity and photoconductivity of preilluminated high-sensitivity layered films of amorphous hydrogenated silicon (a-Si:H) prepared by cyclic deposition with layer-by-layer annealing in hydrogen plasma depend on illumination temperature. The relaxation kinetics of the dark conductivity of these films after illumination is shut off is found to be nonmonotonic. The observed effects can be explained by fast and slow changes in the distribution of energy state density below the midgap during and after illumination.     

高速沉积本征微晶硅的优化及其在太阳电池中的应用

采用高压高功率的甚高频等离子体增强化学气相沉积（VHF-PECVD）技术高速（沉积速率约为1.2 nm/s）沉积了一系列不同厚度的本征微晶硅薄膜,并通过Raman谱和XRD谱的测试,研究了高速沉积时本征微晶硅薄膜的微结构演变特性及其对电池性能的影响.针对其微结构特性及高速沉积本身存在的离子轰击作用强的特点,提出了在沉积微晶硅薄膜过程中采用功率梯度的方法,达到有效地控制薄膜微结构变化的目的,并在一定功率梯度范围内降低了电子温度,提高了薄膜质量,从而使电池效率明显提高.最后在沉积速率为1.2 nm/s时,制备 关键词： 高速沉积 微晶硅薄膜 微结构演变 功率梯度     

Microstructure and lateral conductivity control of hydrogenated nanocrystalline silicon oxide and its application in a-Si:H/a-SiGe:H tandem solar cells

Phosphorous-doped hydrogenated nanocrystalline silicon oxide(n-nc-SiO_x:H) films are prepared via radio frequency plasma enhanced chemical vapor deposition(RF-PECVD). Increasing deposition power during n-nc-SiO_x:H film growth process can enhance the formation of nanocrystalline and obtain a uniform microstructure of n-nc-SiO_x:H film. In addition,in 20 s interval before increasing the deposition power, high density small grains are formed in amorphous SiO_x matrix with higher crystalline volume fraction(I_c) and have a lower lateral conductivity. This uniform microstructure indicates that the higher Ic can leads to better vertical conductivity, lower refractive index, wider optical band-gap. It improves the back reflection in a-Si:H/a-SiGe:H tandem solar cells acting as an n-nc-SiO_x:H back reflector prepared by the gradient power during deposition. Compared with the sample with SiO_x back reflector, with a constant power used in deposition process,the sample with gradient power SiO_x back reflector can enhance the total short-circuit current density(Jsc) and the initial efficiency of a-Si:H/a-SiGe:H tandem solar cells by 8.3% and 15.5%, respectively.     

H^＋注入锗酸铋晶体表面层的性质

Ｈ＾＋注入锗酸铋（Ｂｉ４Ｇｅ３Ｏ１２或ＢＧＯ）晶体引起某些效应，如辐射损伤，光学吸收和近表层区域的晶体分解。经Ｈ＾＋注入后，ＢＧＯ晶体的颜色变成棕色，但实验中证实不了该变化是由色心的产生所引起。此外，实验中也示观察到Ｈ＾＋注入ＢＧＯ晶体中有离子束诱发的光学活性变化。可见在注入过程中，未发生从Ｂｉ４Ｇｅ３Ｏ１２转变到Ｂｉ１２ＧｅＯ２０的结构相变，由此预见，注入过程中可能发生离子束引起的晶体分解。Ｈ＾     

Microstructural characterization of ultrafine-grain interstitial-free steel by X-ray diffraction line profile analysis

This paper highlights the microstructural features of commercially available interstitial free (IF) steel specimens deformed by equal channel angular pressing (ECAP) up to four passes following the route A. The microstructure of the samples was studied by different techniques of X-ray diffraction peak profile analysis as a function of strain (ε). It was found that the crystallite size is reduced substantially already at ε=2.3 and it does not change significantly during further deformation. At the same time, the dislocation density increases gradually up to ε=4.6. The dislocation densities estimated from X-ray diffraction study are found to correlate very well with the experimentally obtained yield strength of the samples.     

Evolution of texture and grain boundary microstructure in two-phase (α + β) brass during recrystallization

The evolution of texture and microstructure during recrystallization is studied for two-phase copper alloy (Cu–40Zn) with a variation of the initial texture and microstructure (hot rolled and solution treated) as well as the mode of rolling (deformation path: uni-directional rolling and cross rolling). The results of bulk texture have been supported by micro-texture and microstructure studies carried out using electron back scatter diffraction (EBSD). The initial microstructural condition as well as the mode of rolling has been found to alter the recrystallization texture and microstructure. The uni-directionally rolled samples showed a strong Goss and BR {236}?385? component while a weaker texture similar to that of rolling evolved for the cross-rolled samples in the α phase on recrystallization. The recrystallization texture of the β phase was similar to that of the rolling texture with discontinuous ?101? α and {111} γ fiber with high intensity at {111}?101?. For a given microstructure, the cross-rolled samples showed a higher fraction of coincident site lattice Σ3 twin boundaries in the α phase. The higher fraction of Σ3 boundaries is explained on the basis of the higher propensity of growth accidents during annealing of the cross-rolled samples. The present investigation demonstrates that change in strain path, as introduced during cross-rolling, could be a viable tool for grain boundary engineering of low SFE fcc materials.     

Structure and phase composition of an Al-Mg-Li-Zr alloy under high-rate superplasticity conditions

Uniaxial-tensile tests are performed on samples of a commercial aluminum-lithium alloy subjected to equal-channel angular extrusion. It is found that the material under study has a highly fine-grain structure and exhibits superplasticity under tension. The microstructure of the samples is studied during their plastic deformation.     

Hard X‐ray‐induced damage on carbon–binder matrix for in situ synchrotron transmission X‐ray microscopy tomography of Li‐ion batteries

The electrode of Li‐ion batteries is required to be chemically and mechanically stable in the electrolyte environment for in situ monitoring by transmission X‐ray microscopy (TXM). Evidence has shown that continuous irradiation has an impact on the microstructure and the electrochemical performance of the electrode. To identify the root cause of the radiation damage, a wire‐shaped electrode is soaked in an electrolyte in a quartz capillary and monitored using TXM under hard X‐ray illumination. The results show that expansion of the carbon–binder matrix by the accumulated X‐ray dose is the key factor of radiation damage. For in situ TXM tomography, intermittent X‐ray exposure during image capturing can be used to avoid the morphology change caused by radiation damage on the carbon–binder matrix.