The influence of annealing temperature on the morphology of graphene islands

We report on temperature-programmed growth of graphene islands on Ru(0001) at annealing temperatures of 700°C,800°C,and 900°C.The sizes of the islands each show a nonlinear increase with the annealing temperature.In 700°C and 800°C annealings,the islands have nearly the same sizes and their ascending edges are embedded in the upper steps of the ruthenium substrate,which is in accordance with the etching growth mode.In 900°C annealing,the islands are much larger and of lower quality,which represents the early stage of Smoluchowski ripening.A longer time annealing at 900°C brings the islands to final equilibrium with an ordered moir’e pattern.Our work provides new details about graphene early growth stages that could facilitate the better control of such a growth to obtain graphene with ideal size and high quality.     

Flexible broadband polarization converter based on metasurface at microwave band

A flexible broadband linear polarization converter is proposed based on the metasurface operating at microwave band.To achieve bandwidth extension property, long and short metallic arc wires, as well as the metallic disks placed over a ground plane, are combined into the polarizer, which can generate three neighboring resonances.Due to the combination of the first two resonances and the optimized size and thickness of the unit cell, the polarization converter can have a weak incident angle dependence.Both simulated and measured results confirm that the average polarization conversion ratio is over 85% from 11.3 GHz to 20.2 GHz within a broad range of incident angle from 0°to 45°.Moreover, the proposed polarization converter based on flexible substrates can be applied for conformal design.The simulation and experiment results demonstrate that our designed polarizer still keeps high polarization conversion efficiency, even when it adheres to convex cylindrical surfaces.The periodic metallic structure of the designed polarizer has great potential application values in the microwave, terahertz, and optic regimes.     

Simulation analysis of one-stage C+L-band erbium-doped fiber ASE source with double-pass bi-directional pumping configuration

A new technique to generate a C+L-band flat amplified spontaneous emission (ASE) source in one-stage erbium-doped fiber (EDF) using bi-directional pumping configuration is analyzed. The simulation results show that the key point of obtaining flat C+L-band ASE spectrum in one-stage EDF is using a laser diode operated at 980 nm as backward pump source. ASE source with nearly 80-nm bandwidth can be obtained by means of selecting suitable fiber length and properly adjusting the ratio of forward to backward pump power.     

Effect of annealing on the damage threshold and optical properties of HfO_2/Ta_2O_5/SiO_2 high-reflection film

The effect of thermal annealing on the optical properties, microstructure, and laser-induced damage threshold(LIDT) of HfO_2/Ta_2O_5/SiO_2 HR films has been investigated. The transmission spectra shift to a short wavelength and the X-ray diffraction peaks of monoclinic structure HfO_2 are enhanced after thermal annealing. The calculated results of the m(-111) diffraction peak show that the HfO_2 grain size is increased, which is conducive to increasing the thermal conductivity. Thermal annealing also reduces the laser absorption of high-reflection films. The improvement of thermal conductivity and the decrease of laser absorption both contribute to the improvement of LIDT. The experimental results show that the highest LIDT of 22.4 J/cm~2 is obtained at300°C annealing temperature. With the further increase of annealing temperature, the damage changes from thermal stress damage to thermal explosion damage, resulting in the decrease of LIDT.     

Measurment of the energy spectrum of an electron beam extracted from an accelerator

The electron energy spectrum is one of the most important characteristics of an electron beam that is extracted from a linear accelerator. The most direct way to determine an electron spectrum would be to use a magnetic spectrometer and this method could also give results with high precision and effectiveness. In this article we describe our design of a new multilayer absorption method, which is based on the depth-dose curves method that can be used in most irradiation accelerators,and adds the Monte Carlo simulation and iterative algorithm in order to reconstruct the electron energy spectrum. In this article the energy spectrum was measured using these two methods, and good results were acquired. These results could be crosschecked, which made the results more reliable.     

Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy

The growth of the InAs film directly on the Si substrate deflected from the plane(100) at 4° towards(110) has been performed using a two-step procedure. The effect of the growth and annealing temperature on the electron mobility and surface topography has been investigated for a set of samples. The results show that the highest electron mobility is4640 cm~2/V·s in the sample, in which the 10-nm InAs nucleation layer is grown at a low temperature of 320 ℃ followed by ramping up to 560 ℃, and the nucleation layer was annealed for 15 min and the second layer of InAs is grown at 520 ℃.The influence of different buffer layers on the electron mobility of the samples has also been investigated, which shows that the highest electron mobility of 9222 cm~2/V·s at 300 K is obtained in the sample grown on a thick and linearly graded InGaAlAs metamorphic buffer layer deposited at 420 ℃.     

Effects of Fe additive on diamond crystallization from carbonyl nickel powders-C system under HPHT condition

In this paper, diamond crystallization from carbonyl nickel powders-C and carbonyl nickel powders + Fe–C systems are investigated in detail at a pressure of 6.0 GPa and temperatures ranging from 1410°C–to 1435°C by temperature gradient growth. The effects of Fe additive on the crystal morphology are discussed in the diamond crystallization process.Furthermore, Fourier infrared measurement results indicate that the spectrum of the diamond obtained from Ni + Fe–C system after annealing treatment is nearly consistent with that of natural diamond crystal. We believe that this study is of benefit to a further understanding of the growth mechanism of natural diamond.     

Ultra broadband-flattened dispersion photonic crystal fiber for supercontinuum generation

We propose an improved design of photonic crystal fiber (PCF) with ultra broadband-flattened dispersion and ultra-low confinement loss in the telecommunication window.The design is considerably suitable for the generation of wideband supercontinuum spectrum.Numerical results reveal that the proposed PCF structure possesses a low dispersion of 0±1.5 ps/(nm·km) in the wavelengths ranging from 1.134 to 1.805 μm (approximately 700-nm bandwidth) with a confinement loss of less than 10 8 dB/km.In addition,a nonlinear coefficient greater than 11.47 (W·km) 1 and a dispersion slope of as low as 0.005694 ps/(nm 2 ·km) are obtained at 1.55-μm wavelength.Moreover,a symmetric flat supercontinuum spectrum with a 10-dB bandwidth of 190 nm is achieved in a 3-m-long fiber,verifying the excellent optical features of the innovative PCF.     

Annealing effects on the microwave permittivity and permeability properties of Fe79Si16B5 microwires and their micowave absorption performances

This paper reports that amorphous magnetic microwires(Fe79Si16B5) have been fabricated by a melt-extraction technique and have been annealed at 600°C and 750°C respectively.Differential scanning calorimeter measurements show that nanocrystalline magnetic phase(α-Fe) has been formed in the amorphous matrix when it was annealed at 600°C.Hard magnetic phase(Fe2B) was formed in the microwires annealed at 750°C,which increases the magnetic coercivity.Microwave permittivity and permeability are found to be dependent on the microstructures.The permittivity fitting results show that multi Lorentzian dispersion processes exist.For microwires annealed at 750°C,their resonance peaks due to the domain wall movements and natural resonance are found higher than those of microwires annealed at 600°C.The microwave absorption performance of microwires annealed at 600°C is found better than microwires annealed at 750°C.     

Effects of Rapid Thermal Processing on Microstructure and Optical Properties of As-Deposited Ag2O Films by Direct-Current Reactive Magnetron Sputtering

（111） preferentially oriented Ag2O film deposited by direct current reactive magnetron sputtering is annealed by rapid thermal processing at different annealing temperatures for 5 min. The film microstructure and optical properties are then characterized by x-ray diffractometry, scanning electron microscopy, and spectrophotometry, respectively. The results indicate that no clear Ag diffraction peak is discernable in the Ag2O film annealed below 200°C. In comparison, the Ag2O film annealed at 200°C begins to exhibit characteristic Ag diffraction peaks, and in particular the Ag2O film annealed at 250°C can demonstrate enhanced Ag diffraction peaks. This implies that the threshold of the thermal decomposition reaction to produce Ag particles is approximately 200°C for the Ag2O film. In addition, an evolution of the film surface morphology from compact and pyramid-like to a rough and porous structure clearly occurred with increasing annealing temperature. The porous structure might be attributable to the escape of the oxygen produced during annealing, while the rough surface might originate from the reconstruction of the surface. The dispersion of interference peak intensity in the reflectance and transmission spectra could be attributed to the Ag particles produced. The lowered crystallinity and Ag particles produced induce a lattice defect, which results in an enhanced transmissivity in the violet region and a weakened transmissivity in the infrared region.     

The electrical, optical properties of AlSb polycrystalline thin films deposited by magnetron co-sputtering without annealing

In order to fabricate AlSb polycrystalline thin films without post annealing, this paper studies a technology of magnetron co-sputtering onto intentionally heated substrate. It compares the structural characteristics and electrical properties of AlSb films which are deposited at different substrate temperatures. It finds that the films prepared at a substrate temperature of 450 oC exhibit an enhanced grain growth with an average grain size of 21 nm and the lattice constant is 0.61562 nm that goes well with unstained lattice constant (0.61355 nm). The ln(σ_dark) ～1/T curves show that the conductivity activation energy is about 0.38 eV when the film is deposited at 450 oC without an annealing. The transmittance and reflectance spectra show that the film deposited at 450 oC has an optical band gap of 1.6 eV. These results indicate that we have prepared AlSb polycrystalline films which do not need a post annealing.     

Performance of a polarizer using synthetic mica crystal in the 12——25 nm wavelength range

To develop polarizer functioning in the extreme ultraviolet (EUV) and soft X-ray region, the polarization performance of synthetic mica has been investigated theoretically with a simulation code using Fresnel equations and optical constants from the Henke database. The reflectance of synthetic mica crystal for s and p polarization was measured to investigate its polarization performance in a home-made synchrotron radiation soft X-ray polarimeter at beamline 3W1B, Beijing Synchrotron Radiation Facility (BSRF). The reflectivity of the synthetic mica crystal at an angle of grazing incidence of 48° was obtained from the experimental data, which is about 4.8 × 10^-3 at 25 nm and 6.0 × 10^-4 at 12 nm, and the linear polarizance of the X-ray reflected by the synthetic mica crystal that we measured using an analyzer-rotating method increases from 80% to 96.6% in this EUV region, while higher than 98.2% in the simulation. The result indicates that this synthetic mica crystal works as a practical polarizer in this EUV region of 12--25 nm, and also in an extensive wavelength region higher than 25 nm.     

High-Order Ultrawideband Pulse Generation from NRZ-DPSK Signals

A simple method to generate ultrawideband （UWB） doublet and triplet from nonreturn-to-zero （NRZ） differential phase shift keying （DPSK） signals is proposed and experimentally demonstrated. The proposed configuration consists of a Mach-Zehnder modulator （MZM） to generate NRZ-DPSK signals, a section of single-mode fibre to form a microwave bandpass filter, which is used to generate doublet pulses, and a Gaussian optical bandpass filter （OBF）, which serves as a frequency discriminator to generate higher-order UWB pulses. A pair of polarity- reversed triplet pulses is achieved by locating the optical carrier at the positive and negative linear Mopes of the OBF, where the OBF detuning is 0.12nm and -0.2 nm, respectively. The spectra of the pair of UWB triplets have a central frequency of 5 GHz and 5.6 GHz, and have a -10 dB bandwidth of 6.9 GHz and 8.1 GHz, respectively. The UWB pulses remain doublet shape when the light wavelength is located at the peak of the OBF. The spectrum of the doublet has a central frequency of 5.6 GHz and a -10 dB bandwidth of 6.9 GHz.     

Generation of Anti-Stokes Line in Fundamental Mode of Photonic Crystal Fibre

A photonic crystal fibre （PCF） with zero-dispersion wavelength around 800 nm is designed and fabricated. Simulated results show that the zero-dispersion wavelength of fundamental mode for this PCF is at 826nm, and phase-matched four-wave mixing can be achieved in fundamental mode. Using 20ors Ti：sapphire laser with central wavelength at 810nm as pump, the anti-Stokes line around 610hm ＆ generated efficiently. The output signal has a Gaussian-like profile, which indicates that the anti-Stokes signal is in the fundamental mode of the PCF. The energy of anti-Stokes signal is higher than that of residual pump laser and the maximum ratio of the anti-Stokes signal to the pump component in the output spectrum is estimated to be 1.2.     

Optical and structural properties of Ge-ion-implanted fused silica after annealing in different ambient conditions

Ge+ ions are implanted into fused silica glass at room temperature and a fluence of 1×10 17 cm-2 . The as-implanted samples are annealed in O2, N2 and Ar atmospheres separately. Ge0 , GeO and GeO2 coexist in the as-implanted and annealed samples. Annealing in different atmospheres at 600℃ leads each composite to change its content. After annealing at 1000℃, there remains some amount of Ge 0 in the substrates. However, the content of Ge decreases due to out-diffusion. After annealing in N2 , Si–N composite is formed. The absorption peak of GeO appears at 240 nm after annealing in O2 atmosphere, and a new absorption peak occurs at 418 nm after annealing in N2 atmosphere, which is attributed to the Si–N composite. There is no absorption peak appearing after annealing in Ar atmosphere. Transmission electron microscopic images confirm the formation of Ge nanoparticles in the as-implanted sample and GeO 2 nanoparticles in the annealed sample. In the present study, the GeO content and the GeO2 content depend on annealing temperature and atmosphere. Three photoluminescence emission band peaks at 290, 385 and 415 nm appear after ion implantation and they become strong with the increase of annealing temperature below 700℃, and their photoluminescences recover to the values of as-grown samples after annealing at 700℃. Optical absorption and photoluminescence depend on the annealing temperature and atmosphere.     

Influence of Total Ionizing Dose Irradiation on Low-Frequency Noise Responses in Partially Depleted SOI nMOSFETs

Total ionizing dose effect induced low frequency degradations in 130 nm partially depleted silicon-on-insulator(SOI) technology are studied by ~(60) Co γ-ray irradiation. The experimental results show that the flicker noise at the front gate is not affected by the radiation since the radiation induced trapped charge in the thin gate oxide can be ignored. However, both the Lorenz spectrum noise, which is related to the linear kink effect(LKE) at the front gate, and the flicker noise at the back gate are sensitive to radiation. The radiation induced trapped charge in shallow trench isolation and the buried oxide can deplete the nearby body region and can activate the traps which reside in the depletion region. These traps act as a GR center and accelerate the consumption of the accumulated holes in the floating body.It results in the attenuation of the LKE and the increase of the Lorenz spectrum noise. Simultaneously, the radiation induced trapped charge in the buried oxide can directly lead to an enhanced flicker noise at the back gate. The trapped charge density in the buried oxide is extracted to increase from 2.21×10~(18)eV~(-1)cm~(-3) to 3.59×10~(18)eV~(-1)cm~(-3) after irradiation.     

Effect of high-temperature annealing on AIN thin film grown by metalorganic chemical vapor deposition

The effect of high-temperature annealing on A1N thin film grown by metalorganic chemical vapor deposition was investigated using atomic force microscopy, Raman spectroscopy, and deep ultra-violet photoluminescence （PL） with the excitation wavelength as short as ~ 177 nm. Annealing experiments were carded out in either N2 or vacuum atmosphere with the annealing temperature ranging from 1200 ℃ to 1600 ℃. It is found that surface roughness reduced and compres- sive strain increased with the annealing temperature increasing in both annealing atmospheres. As to optical properties, a band-edge emission peak at 6.036 eV and a very broad emission band peaking at about 4.7 eV were observed in the photoluminescence spectrum of the as-grown sample. After annealing, the intensity of the band-edge emission peak varied with the annealing temperature and atmosphere. It is also found that a much stronger emission band ranging from 2.5 eV to 4.2 eV is superimposed on the original spectra by annealing in either N2 or vacuum atmosphere. We attribute these deep-level emission peaks to the VAL--ON complex in the A1N material.     

Hybrid fiber interferometer for simultaneous measurement of displacement and temperature

A hybrid fiber interferometer sensing configuration for displacement and temperature measurements is proposed and experimentally demonstrated that is constructed by splicing a short section of polarization maintaining optical fiber to an end-cleaved single mode optical fiber with a tapering structure. The reflected spectrum changes with the variation of displacement and temperature. The sensing configuration uses the method of wavelength and intensity modulations for displacement and temperature measurements, respectively, to which the sensitivities are 0.01392 nm/μm, 0.0214 d Bm/μm,-0.09136 nm∕°C, and 0.15795 d Bm/°C. Experimental results show that displacement and temperature can be measured simultaneously by demodulating the reflected spectrum.     

Influence of annealing treatment on as-grown Ib-type diamond crystal at a high temperature and high pressure

In this paper,we report on the influence of annealing treatment on as-grown Ib-type diamond crystal under high pressure and high temperature in a china-type cubic anvil high-pressure apparatus.Experiments are carried out at a pressure of 7.0 GPa and temperatures ranging from 1700 C to 1900 C for 1 h.Annealing treatment of the diamond crystal shows that the aggregation rate constant of nitrogen atoms in the as-grown Ib-type diamond crystal strongly depends on diamond morphology and annealing temperature.The aggregation rate constant of nitrogen remarkably increases with the increase of annealing temperature and its value in octahedral diamond is much higher than that in cubic diamond annealed at the same temperature.The colour of octahedral diamond crystal is obviously reduced from yellow to nearly colorless after annealing treatment for 1 h at 1900 C,which is induced by nitrogen aggregation in a diamond lattice.The extent of nitrogen aggregation in an annealed diamond could approach approximately 98% indicated from the infrared absorption spectra.The micro-Raman spectrum reveals that the annealing treatment can improve the crystalline quality of Ib-type diamond characterized by a half width at full maximum at first order Raman peak,and therefore the annealed diamond crystals exhibit nearly the same properties as the natural IaA-type diamond stones of high quality in the Raman measurements.     

Effect of sample temperature on laser-induced semiconductor plasma spectroscopy

We investigate the temperature dependence of the emission spectrum of a laser-induced semiconductor(Ge and Si) plasma. The change in spectral intensity with the sample temperature indicates the change of the laser ablation mass. The reflectivity of the target surface is reduced as the sample is heated, which leads to an increase in the laser energy coupled to the surface of the sample and eventually produces a higher spectral intensity.The spectral intensities are enhanced by a few times at high temperatures compared with the cases at low temperatures. The spectral intensity of Ge is enhanced by 1.5 times at 422.66 nm, and 3 times at589.33 nm when the sample temperature increases from 50°C to 300°C. We can obtain the same emission intensity by a more powerful laser or by less pulse energy with a higher sample temperature. Based on experimental observations we conclude that the preheated sample can improve the emission intensity of laser-induced semiconductor plasma spectroscopy.