Evidence of GeO volatilization and its effect on the characteristics of HfO2 grown on Ge substrate

HfO₂ films are deposited by atomic layer deposition (ALD) using tetrakis ethylmethylamino hafnium (TEMAH) as the hafnium precursor, while O₃ or H₂O is used as the oxygen precursor. After annealing at 500℃ in nitrogen, the thickness of Ge oxide's interfacial layer decreases, and the presence of GeO is observed at the H₂O-based HfO₂ interface due to GeO volatilization, while it is not observed for the O₃-based HfO₂. The difference is attributed to the residue hydroxyl groups or H₂O molecules in H₂O-based HfO₂ hydrolyzing GeO₂ and forming GeO, whereas GeO is only formed by the typical reaction mechanism between GeO₂ and the Ge substrate for O₃-based HfO₂ after annealing. The volatilization of GeO deteriorates the characteristics of the high-κ films after annealing, which has effects on the variation of valence band offset and the C–V characteristics of HfO₂/Ge after annealing. The results are confirmed by X-ray photoelectron spectroscopy (XPS) and electrical measurements.     

Infrared photoluminescence from GeSi nanocrystals embedded in a germanium–silicate matrix

We investigate the structural and optical properties of GeO/SiO₂ multilayers obtained by evaporation of GeO₂ and SiO₂ powders under ultrahigh vacuum conditions on Si(001) substrates. Both Raman and infrared absorption spectroscopy measurements indicate the formation of GeSi nanocrystals after postgrowth annealing at 800°C. High-resolution transmission electron microscopy characterizations show that the average size of the nanocrystals is about 5 nm. For samples containing GeSi nanocrystals, photoluminescence is observed at 14 K in the spectral range 1500–1600 nm. The temperature dependence of the photoluminescence is studied.     

Photoluminescence evolution in self-ion-implanted and annealed silicon

Si⁺ ion-implanted silicon wafers are annealed at different temperatures from room temperature to 950~℃ and then characterized by using the photoluminescence (PL) technique at different recorded temperatures (RETs). Plentiful optical features are observed and identified clearly in these PL curves. The PL spectra of these samples annealed in different temperature ranges are correspondingly dominated by different emission peaks. Several characteristic features, such as an R line, S bands, a W line, the phonon-assistant W^\rm TA and Si^\rm TO peaks, can be detected in the PL spectra of samples annealed at different temperatures. For the samples annealed at 800~\du, emission peaks from the dislocations bounded at the deep energy levels of the forbidden band, such as D_1 and D₂ bands, can be observed at a temperature as high as 280~K. These data strongly indicate that a severe transformation of defect structures could be manipulated by the annealing and recorded temperatures. The deactivation energies of the main optical features are extracted from the PL data at different temperatures.     

Post-annealing effect upon optical properties of electron beam evaporated molybdenum oxide thin films

Molybdenum oxide (MoO₃) thin films were deposited by electron beam evaporation. The chemical composition, microstructure, optical and electrical properties of MoO₃ thin films depend on the annealing temperature and ambient atmosphere. X-ray diffraction (XRD) shows that crystalline MoO₃ films can be obtained at various post-annealing temperatures from 200 to 500 °C in N₂ and O₂. X-ray photoelectron spectroscopy (XPS) results reveal that the O-1s emission peak was shifted slightly toward lower binding energies as the annealing temperature in N₂ was increased. The oxygen vacancies and conductivity of MoO₃ film increased with the annealing temperature. However, when the MoO₃ films were annealed in an atmosphere of O₂, the optical transmission, the O/Mo ratio and the photon energy increased with the annealing temperature. The results differ from those for films annealed in a N₂ atmosphere.     

Interactions of germanium atoms with silica surfaces

GeH₄ is thermally cracked over a hot filament depositing 0.7-15 ML Ge onto 2-7 nm SiO₂/Si(1 0 0) at substrate temperatures of 300-970 K. Ge bonding changes are analyzed during annealing with X-ray photoelectron spectroscopy. Ge, GeH_x, GeO, and GeO₂ desorption is monitored through temperature programmed desorption in the temperature range 300-1000 K. Low temperature desorption features are attributed to GeO and GeH₄. No GeO₂ desorption is observed, but GeO₂ decomposition to Ge through high temperature pathways is seen above 750 K. Germanium oxidization results from Ge etching of the oxide substrate. With these results, explanations for the failure of conventional chemical vapor deposition to produce Ge nanocrystals on SiO₂ surfaces are proposed.     

Transitions of microstructure and photoluminescence properties of the Ge/ZnO multilayer films in certain annealing temperature region

The Ge/ZnO multilayer films have been prepared by rf magnetron sputtering. The effects of annealing on the microstructure and photoluminescence properties of the multilayers have been investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier-transform infrared (FTIR) spectrometry and photoluminescence (PL) spectrometry. The investigation of structural properties indicates that Zn₂GeO₄ has been formed with (2 2 0) texture and Zn deficiency from Ge/ZnO multilayer films in the process of annealing. However, lower Zn/Ge ratio can be improved by annealing. The annealed multilayers show three main emission bands at 532, 700, and 761 nm, which originate from the transition between oxygen vacancy () and Zn vacancies (V_Zn), the radiative recombination of quantum-confined excitons (QCE) in Ge nanocrystals, and the optical transition in the GeO color centers, respectively. Finally, the fabrication of thin film Zn₂GeO₄ from Ge/ZnO multilayer films by annealing at low temperature provides another approach to prepare the green-emitting oxide phosphor film:Zn₂GeO₄:Mn.     

Ti离子注入和退火对ZnS薄膜结构和光学性质的影响

利用真空蒸发法在石英玻璃衬底上制备了ZnS薄膜,将能量80 keV,剂量1×10¹⁷ cm^-2的Ti离子注入到薄膜中,并将注入后的ZnS薄膜进行退火处理,退火温度500—700 ℃.利用X射线衍射（XRD）研究了薄膜结构的变化,利用光致发光（PL）和光吸收研究了薄膜光学性质的变化.XRD结果显示,衍射峰在500 ℃退火1 h后有一定程度的恢复;光吸收结果显示,离子注入后光吸收增强,随着退火温度的上升,光吸收逐渐降低,吸收边随着退火温度的提高发生蓝移;PL显示,薄 关键词： ZnS薄膜 离子注入 X射线衍射 光致发光     

注入Ar+的蓝宝石晶体退火前后光致发光谱的分析

对注入Ar⁺后不同晶面取向的蓝宝石晶体在不同退火条件下的光致发光谱进行了分析.分析结果表明:三种晶面取向的蓝宝石样品经Ar⁺注入后,其光致发光谱中均出现了新的位于506nm处的发光峰;真空和空气气氛下的退火均对样品在506nm处的发光有增强作用,不同晶面取向的样品发光增强程度不同,且发光增强至最大时的退火温度也不同,空气气氛下的退火使样品发光增强程度更为显著.由此可以看出,退火气氛、退火温度和晶面取向均对样品发光峰强度有影响. 关键词： 2O₃')" href="#">Al₂O₃ 离子注入 退火 光致发光谱     

离子注入Zn的Si(001)基片热氧化制备纳米ZnO团簇及其生长行为研究

采用离子注入技术将Zn离子注入Si（001）基片,并在大气环境下加热氧化制备了ZnO纳米团簇.利用电子探针、薄膜X射线衍射仪、原子力显微镜和透射电子显微镜,对注入和热氧化后的薄膜成分、表面形貌和微观结构进行表征,探讨了热氧化温度以及注入剂量对纳米ZnO团簇的成核过程及生长行为的影响.结果表明,Zn离子注入到Si基片表面后形成了Zn纳米团簇,热氧化过程中Zn离子向表面扩散,在表面SiO₂非晶层和Si基片多晶区的界面处形成纳米团簇.热氧化温度是影响ZnO纳米团簇结晶质量的一个重要参数.随着热氧化温度的升高,金属Zn的衍射峰强度逐渐变弱并消失,而ZnO的（101）衍射峰强度逐渐增强.当热氧化温度高于800 ℃以后,ZnO与SiO₂之间开始发生化学反应形成Zn₂SiO₄. 关键词： ZnO纳米团簇 离子注入 微观结构 形貌分析     

Structure and effects of annealing in colloidal matrix‐free Ge quantum dots

The structure of small (2–5 nm) Ge quantum dots prepared by the colloidal synthesis route is examined. Samples were synthesized using either GeO₂ or GeCl₄ as precursor. As‐prepared samples were further annealed under Ar or H₂/Ar atmosphere at different temperatures in order to understand the effect of annealing on their structure. It was found that as‐prepared samples possess distinctly different structures depending on their synthesis route as indicated by their long‐range ordering. An appreciable amount of oxygen was found to be bound to Ge in samples prepared with GeO₂ as a precursor; however, not for GeCl₄. Based on combined transmission electron microscope, Raman, X‐ray diffraction and X‐ray absorption measurements, it is suggested that as‐prepared samples are best described by the core‐shell model with a small nano‐crystalline core and an amorphous outer layer terminated either with oxygen or hydrogen depending on the synthesis route. Annealing in an H₂Ar atmosphere leads to sample crystallization and further nanoparticle growth, while at the same time reducing the Ge—O bonding. X‐ray diffraction measurements for as‐prepared and annealed samples indicate that diamond‐type and metastable phases are present.     

A novel Dy3+-doped GdPO4 white-light phosphors under vacuum ultraviolet excitation for Hg-free lamps application

Novel Dy3+-doped GdPO4 white light phosphors with monoclinic system were successfully synthesised by hydrothermal method at 240 ℃. This paper investigates the luminescence properties of white-light Gd1-xPO4 : xDy3+ under vacuum ultraviolet (VUV) excitation. The strong absorption at around 147 nm in excitation spectrum energy can be transferred to the energy levels of Dy3+ ion from the host absorption. Additionally, this white light phosphors are activated by a single Dy3+ ion and with a lower preparation temperature, which tend to decrease the consumption of rare earth resource and energy. Therefore, the luminescence of Gd1-xPO4 : xDy3+ under VUV excitation is effective, and proves to be promising in application to mercury-free lamp.     

The effects of fast neutron irradiation on oxygen in Czochralski silicon

The effects of fast neutron irradiation on oxygen atoms in Czochralski silicon (CZ-Si) are investigated systemically by using Fourier transform infrared (FTIR) spectrometer and positron annihilation technique (PAT). Through isochronal annealing, it is found that the trend of variation in interstitial oxygen concentration ([O_i]) in fast neutrons irradiated CZ-Si fluctuates largely with temperature increasing, especially between 500 and 700℃. After the CZ-Si is annealed at 600℃, the V₄ appearing as three-dimensional vacancy clusters causes the formation of the molecule-like oxygen clusters, and more importantly these dimers with small binding energies (0.1--1.0eV) can diffuse into the Si lattices more easily than single oxygen atoms, thereby leading to the strong oxygen agglomerations. When the CZ-Si is annealed at temperature increasing up to 700℃, three-dimensional vacancy clusters disappear and the oxygen agglomerations decompose into single oxygen atoms (O) at interstitial sites. Results from FTIR spectrometer and PAT provide an insight into the nature of the [O_i] at temperatures between 500 and 700℃. It turns out that the large fluctuation of [O_i] after short-time annealing from 500 to 700℃ results from the transformation of fast neutron irradiation defects.     

Ag-Cu离子注入玻璃后不同气氛退火的光吸收研究

采用MEVVA源（metal vapor vacuum arc ion source）引出的强束流脉冲Ag,Cu离子先后注入到SiO₂玻璃，x射线光电子能谱仪（XPS）分析显示Ag，Cu大多仍为金属态，有部分氧化态Cu存在.透射电镜观察分析和光学吸收谱都表明在衬底中形成了纳米合金颗粒.结合有效媒质理论，得到模拟的光学吸收谱，与实验结果基本符合，较好地验证了以上结论.样品退火后颗粒发生分解，分解的颗粒在氧化气氛下被氧化，且有部分向样品表面蒸发；在还原气氛下氧化态元素被还原并成核生长.故 关键词： 离子注入 纳米颗粒 退火 光学吸收率     

Effects of annealing atmosphere on the luminescent efficiency of ZnTe:O phosphors

The effect of the annealing atmosphere on the luminescent efficiency of ZnTe:O phosphors for X-ray imaging applications was studied. The phosphors were doped by ball-milling bulk ZnTe crystals in an O₂ atmosphere and annealed in various atmospheres: vacuum, N₂ or forming gas (95%N₂/5%H₂). All samples exhibited a deep red emission centered at 680 nm.The samples annealed in forming gas atmosphere exhibited an X-ray luminescent efficiency five times higher than the samples annealed in vacuum or N₂ atmospheres, which was attributed to the removal of surface tellurium oxides.     

增强型AlGaN/GaN高电子迁移率晶体管高温退火研究

深入研究了两种增强型AlGaN/GaN高电子迁移率晶体管(HEMT)高温退火前后的直流特性变化.槽栅增强型AlGaN/GaN HEMT在500 ℃ N₂中退火5 min后,阈值电压由0.12 V正向移动到0.57 V,器件Schottky反向栅漏电流减小一个数量级.F注入增强型AlGaN/GaN HEMT在 400 ℃ N₂中退火2 min后,器件阈值电压由0.23 V负向移动到-0.69 V,栅泄漏电流明显增大.槽栅增强型器件退火过程中Schottky有效势垒     

Characteristics and parameter extraction for NiGe/n-type Ge Schottky diode with variable annealing temperatures

Current transport mechanism in Ni-germanide/n-type Ge Schottky diodes is investigated using current--voltage characterisation technique with annealing temperatures from 300~\duto 500~\du. Based on the current transport model, a simple method to extract parameters of the NiGe/Ge diode is presented by using the $I$--$V$ characteristics. Parameters of NiGe/n-type Ge Schottky diodes fabricated for testing in this paper are as follows: the ideality factor $n$, the series resistance $R_{\rm s}$, the zero-field barrier height $\phi _{\rm b0}$, the interface state density $D_{\rm it}$, and the interfacial layer capacitance $C_{\rm i}$. It is found that the ideality factor $n$ of the diode increases with the increase of annealing temperature. As the temperature increases, the interface defects from the sputtering damage and the penetration of metallic states into the Ge energy gap are passivated, thus improving the junction quality. However, the undesirable crystallisations of Ni-germanide are observed together with NiGe at a temperature higher than 400~\du. Depositing a very thin ($\sim $1~nm) heavily Ge-doped $n^{+}$ Ge intermediate layer can improve the NiGe film morphology significantly.     

Influence of p-GaN annealing on the optical and electrical properties of InGaN/GaN MQW LEDs

Optical and electrical properties of InGaN/GaN multiple quantum wells (MQWs) light emitting diodes (LEDs) annealed in pure O₂ ambient (500 °C) and pure N₂ ambient (800 °C) were systematically investigated. The temperature-dependent photoluminescence measurements showed that high-temperature thermal annealing in N₂ ambient can induce indium clusters in InGaN MQWs. Although the deep traps induced by indium clusters can act as localized centers for carriers, there are many more dislocations out of the trap centers due to high-temperature annealing. As a result, the radiative efficiency of the sample annealed in N₂ ambient was lower than that annealed in O₂ ambient at room temperature. Electrical measurements demonstrated that the LEDs annealed in O₂ ambient were featured by a lower forward voltage and there was an increase of ~41% in wall-plug efficiency at 20 mA in comparison with the LEDs annealed in N₂ ambient. It is thus concluded that activation of the Mg-doped p-GaN layer should be carried out at a low-temperature O₂ ambient so as to obtain LEDs with better performance.     

Microwave electromagnetic property of SiO2-coated carbonyl iron particles with higher oxidation resistance

Flake carbonyl iron (CI) particles and amorphous silica were used to fabricate SiO₂-coated CI particles through the Stober process. The as-prepared SiO₂-coated CI particles were annealed at 500 °C for 1 h under argon and air atmosphere. The XRD results showed that only a little amount of oxides were formed when the SiO₂-coated CI particles were annealed under the air atmosphere. The magnetic properties of the SiO₂-coated CI particles before and after annealing treatment showed little change, indicating that amorphous silica appears to be very effective in reducing oxidation of the CI particles. The reflection loss exceeding −10 dB can be obtained in the frequency range of 9.9-14.6 GHz and a minimum value can be reached to −21.5 dB at 12.2 GHz for the annealed SiO₂-coated CI particles with the composite thickness being 1.5 mm. The mechanism of annealing treatment influence on the electromagnetic properties and microwave absorption of the SiO₂-coated CI particles was also discussed.     

Fabrication and magnetic properties of Ni0.50.5Zn0.5Fe2O4 nanofibres by electrospinning

NiZn ferrite/polyvinylpyrrolidone composite fibres were prepared by sol–gel assisted electrospinning.Ni0.5Zn0.5Fe2O4 nanofibres with a pure cubic spinel structure were obtained subsequently by calcination of the composite fibres at high temperatures.This paper investigates the thermal decomposition process,structures and morphologies of the electrospun composite fibres and the calcined Ni0.5Zn0.5Fe2O4 nanofibres at different temperatures by thermogravimetric and differential thermal analysis,x-ray diffraction,Fourier transform infrared spectroscopy and field emission scanning electron microscopy.The magnetic behaviour of the resultant nanofibres was studied by a vibrating sample magnetometer.It is found that the grain sizes of the nanofibres increase significantly and the nanofibre morphology gradually transforms from a porous structure to a necklace-like nanostructure with the increase of calcination temperature.The Ni0.5Zn0.5Fe2O4 nanofibres obtained at 1000 C for 2 h are characterized by a necklace-like morphology and diameters of 100–200 nm.The saturation magnetization of the random Ni0.5Zn0.5Fe2O4 nanofibres increases from 46.5 to 90.2 emu/g when the calcination temperature increases from 450 to 1000 C.The coercivity reaches a maximum value of 11.0 kA/m at a calcination temperature of 600 C.Due to the shape anisotropy,the aligned Ni0.5Zn0.5Fe2O4 nanofibres exhibit an obvious magnetic anisotropy and the ease magnetizing direction is parallel to the nanofibre axis.     

Effect of annealing temperature and annealing atmosphere on the structure and optical properties of ZnO thin films on sapphire (0 0 0 1) substrates by magnetron sputtering

ZnO thin films were epitaxially grown on sapphire (0 0 0 1) substrates by radio frequency magnetron sputtering. ZnO thin films were then annealed at different temperatures in air and in various atmospheres at 800 °C, respectively. The effect of the annealing temperature and annealing atmosphere on the structure and optical properties of ZnO thin films are investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL). A strong (0 0 2) diffraction peak of all ZnO thin films shows a polycrystalline hexagonal wurtzite structure and high preferential c-axis orientation. XRD and AFM results reveal that the better structural quality, relatively smaller tensile stress, smooth, uniform of ZnO thin films were obtained when annealed at 800 °C in N₂. Room temperature PL spectrum can be divided into the UV emission and the Visible broad band emission. The UV emission can be attributed to the near band edge emission (NBE) and the Visible broad band emission can be ascribed to the deep level emissions (DLE). By analyzing our experimental results, we recommend that the deep-level emission correspond to oxygen vacancy (V_O) and interstitial oxygen (O_i). The biggest ratio of the PL intensity of UV emission to that of visible emission (I_NBE/I_DLE) is observed from ZnO thin films annealed at 800 °C in N₂. Therefore, we suggest that annealing temperature of 800 °C and annealing atmosphere of N₂ are the most suitable annealing conditions for obtaining high quality ZnO thin films with good luminescence performance.