| The electrical,optical properties of AlSb polycrystalline thin films deposited by magnetron co-sputtering without annealing |
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| 作者姓名： | 黄征 武莉莉 黎兵 郝霞 贺剑雄 冯良桓 李卫 张静全 蔡亚平 |
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| 作者单位： | College of Materials Science and Engineering,Sichuan University |
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| 基金项目： | Project supported by the National High Technology Research and Development Program (863 Program) of China (Grant No. 2006AA05Z418). |
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| 摘 要： | In order to fabricate AlSb polycrystalline thin films without post annealing,this paper studies a technology of magnetron co-sputtering onto intentionally heated substrate.It compares the structural characteristics and electrical properties of AlSb films which are deposited at different substrate temperatures.It finds that the films prepared at a substrate temperature of 450 C exhibit an enhanced grain growth with an average grain size of 21 nm and the lattice constant is 0.61562 nm that goes well with unstained lattice constant(0.61355 nm).The ln(σ dark) ～ 1/T curves show that the conductivity activation energy is about 0.38 eV when the film is deposited at 450 C without an annealing.The transmittance and reflectance spectra show that the film deposited at 450 C has an optical band gap of 1.6 eV.These results indicate that we have prepared AlSb polycrystalline films which do not need a post annealing.
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| 关 键 词： | AlSb thin films magnetron sputtering solar cells |
| 收稿时间： | 1/5/2010 12:00:00 AM |
The electrical, optical properties of AlSb polycrystalline thin films deposited by magnetron co-sputtering without annealing |
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| Huang Zheng,Wu Li-Li,Li Bing,Hao Xi,He Jian-Xiong,Feng Liang-Huan,Li Wei,Zhang Jing-Quan and Cai Yap-Ping.The electrical,optical properties of AlSb polycrystalline thin films deposited by magnetron co-sputtering without annealing[J].Chinese Physics B,2010,19(12):127204-127204. |
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| Authors: | Huang Zheng Wu Li-Li Li Bing Hao Xi He Jian-Xiong Feng Liang-Huan Li Wei Zhang Jing-Quan and Cai Yap-Ping |
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| Institution: | College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China;College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China;College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China;College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China;College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China;College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China;College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China;College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China;College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China |
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| Abstract: | In order to fabricate AlSb polycrystalline thin films without post annealing, this paper studies a technology of magnetron co-sputtering onto intentionally heated substrate. It compares the structural characteristics and electrical properties of AlSb films which are deposited at different substrate temperatures. It finds that the films prepared at a substrate temperature of 450 oC exhibit an enhanced grain growth with an average grain size of 21 nm and the lattice constant is 0.61562 nm that goes well with unstained lattice constant (0.61355 nm). The ln(σdark) ～1/T curves show that the conductivity activation energy is about 0.38 eV when the film is deposited at 450 oC without an annealing. The transmittance and reflectance spectra show that the film deposited at 450 oC has an optical band gap of 1.6 eV. These results indicate that we have prepared AlSb polycrystalline films which do not need a post annealing. |
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| Keywords: | AlSb thin films magnetron sputtering solar cells |
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