非晶硅薄膜的低温快速晶化及其结构分析

在镀铝的廉价玻璃衬底上高速沉积的非晶硅薄膜在不同的温度下退火10min.退火温度为500℃时,薄膜表面形成了硅铝的混合相,非晶硅薄膜开始呈现了晶化现象 退火温度为550℃时,大部分(约80%)的非晶硅晶化为多晶硅,平均晶粒尺寸为500nm 退火温度为600℃时,几乎所有的非晶硅都转化为多晶硅,其平均晶粒尺寸约为15μm.     

铝诱导非晶硅薄膜的场致低温快速晶化及其结构表征

铝诱导非晶硅薄膜晶化可以降低退火温度、缩短退火时间，是制备多晶硅薄膜的一种重要方法.在此基础上，通过在退火过程中加入电场加速了界面处硅、铝原子间的互扩散，实现了非晶硅薄膜的快速低温晶化.实验结果表明，外加电场，退火温度为400℃，退火时间为60min时，薄膜的晶化率大于60％；退火温度为450℃退火时间为30min时，薄膜已经呈现明显的晶化现象；退火温度为500℃退火时间为15min时，薄膜的x射线多晶峰强度与非晶峰强度之比为未加电场的3—4倍. 关键词： 非晶硅薄膜 多晶硅薄膜 外加电场     

退火对Ge诱导晶化多晶Si薄膜结晶特性的影响

本文采用磁控溅射法, 衬底温度500 ℃下在硅衬底上分别制备具有Ge填埋层的a-Si/Ge 薄膜和a-Si薄膜, 并进行后续退火, 采用Raman光谱、X射线衍射、原子力显微镜及场发射扫描电镜等对所制薄膜样品进行结构表征. 结果表明, Ge有诱导非晶硅晶化的作用, 并得出以下重要结论: 衬底温度为500 ℃时生长的a-Si/Ge薄膜, 经600 ℃退火5 h Ge诱导非晶硅薄膜的晶化率为44%, 在相同的退火时间下退火温度提高到700 ℃, 晶化率达54%. 相同条件下, 无Ge填埋层的a-Si薄膜经800 ℃退火5 h薄膜实现晶化, 晶化率为46%. 通过Ge填埋层诱导晶化可使在相同的条件下生长的非晶硅晶薄膜的晶化温度降低约200 ℃. Ge诱导晶化多晶Si薄膜在Si(200)方向具有高度择优取向, 且在此方向对应的晶粒尺寸约为76 nm. 通过Ge诱导晶化制备多晶Si薄膜有望成为制备高质量多晶Si薄膜的一条有效途径.     

大尺寸化学Ni源金属诱导晶化多晶硅的研究

用无电电镀的化学方法，在VHF-PECVD沉积获得的非晶硅薄膜表面形成镍诱导源，在550℃下退火若干小时，可以诱导产生微米量级的多晶硅晶粒.用此法形成的镍源可以均匀地分布在非晶硅薄膜的表面.非晶硅薄膜上形成晶核的数量取决于镍溶液的浓度、pH值和无电电镀的时间等参量.当成核密度比较低时可以观察到径向晶化现象.用VHF-PECVD非晶硅薄膜作为晶化前驱物，晶化后多晶硅的最大晶粒尺寸可达到90μm.用此多晶硅试制的TFT，获得了良好的器件特性. 关键词： 金属诱导晶化 化学源 多晶硅 薄膜晶体管     

磁控共溅射低温制备多晶硅薄膜及其特性研究

多晶硅在光电子器件领域具有较为重要的用途。利用磁控溅射镀膜系统,通过共溅射技术在玻璃衬底上制备了非晶硅铝(α-Si/Al)复合膜,将Al原子团包覆在α-Si基质中,膜中的Al含量可通过Al和Si的溅射功率比来调节。复合膜于N₂气氛中进行350 ℃,10 min快速退火处理,制备出了多晶硅薄膜。利用X射线衍射仪、拉曼光谱仪和紫外-可见光-近红外分光光度计对多晶硅薄膜的性能进行表征,研究了Al含量对多晶硅薄膜性能的影响。结果表明：共溅射法制备的α-Si/Al复合膜在低温光热退火下晶化为晶粒分布均匀的多晶硅薄膜;随着膜中Al含量逐渐增加,多晶硅薄膜的晶化率、晶粒尺寸逐渐增加,带隙则逐渐降低;Al/Si溅射功率比为0.1时可获得纳米晶硅薄膜,Al/Si溅射功率比为0.3时得到晶化率较高的多晶硅薄膜,通过Al含量的调节可实现多晶硅薄膜的晶化率、晶粒尺寸及带隙的可控。     

532nm连续激光晶化非晶硅薄膜的原位拉曼光谱研究

用磁控溅射制备了非晶硅薄膜,用波长为532 nm的连续激光退火和显微Raman光谱原位测试技术和场发射扫描电子显微镜研究了非晶硅薄膜在不同激光功率密度和不同扫描速度下的晶化状态。结果表明,激光照射时间10 s,激光功率密度大于2.929×105W/cm2时,能实现非晶硅薄膜晶化。在激光功率密度为5.093×105W/cm2,扫描速度为10 mm/s时非晶硅开始向多晶硅转化。在5.093×105W/cm2的功率密度下,以1.0 mm/s的扫描速度退火非晶硅薄膜,得到的晶粒直径为740 nm。     

退火温度对TiO_2纳米薄膜酒精气敏特性影响的研究(英文)

采用直流磁控溅射的方法在Al2O3陶瓷管、硅基片上溅射制备了二氧化钛(TiO2)纳米薄膜材料.将薄膜样品放入管式退火炉中分别在500℃, 700℃和1100℃温度下退火.由于退火温度的不同,薄膜的晶体结构、晶粒尺寸、晶向以及气敏特性都有所不同.利用X射线衍射(XRD)技术和薄膜气敏特性测试,分析了退火温度对薄膜气敏特性的影响.分析结果表明退火温度在500℃时,呈现锐钛矿结构,薄膜具有很好的选择性、很短的反应(恢复)时间.对TiO2薄膜表面进行修饰,发现此TiO2薄膜的最佳工作温度为370℃左右.薄膜的气敏机理也得到了讨论.     

低温铝诱导晶化制备纳米晶硅薄膜的物相和光学性能研究

采用射频磁控溅射镀膜系统,在玻璃衬底上制备了非晶硅(α-Si)/铝(Al)复合薄膜,结合氮气(N₂)气氛中低温快速光热退火制备了纳米晶硅(nc-Si)薄膜;利用光学显微镜、共焦光学显微仪、X射线衍射(XRD)仪、拉曼散射光谱(Raman)仪和紫外-可见光-近红外分光光度计(UV-VIS-NIR)对纳米晶硅薄膜的表面形貌、物相及光学性能进行了表征,研究了退火工艺对薄膜性能的影响。结果表明： 300 ℃,25 min光热退火可使α-Si/Al膜晶化为纳米晶硅薄膜,晶化率为15.56%,晶粒尺寸为1.75 nm;退火温度从300 ℃逐渐升高到400 ℃,纳米晶硅薄膜晶粒尺寸、晶化率、带隙逐渐增加,表面均匀性、晶格畸变量逐渐减小;退火温度从400 ℃逐渐升高到500 ℃,纳米晶硅薄膜的晶粒尺寸、晶化率继续增加,带隙则逐渐降低;采用纳米晶硅薄膜的吸光模型验证了所制备的纳米晶硅薄膜的光学特性,其光学带隙的变化趋势与吸光模型得出的结果一致。     

不同退火温度下晶化硅薄膜的电学输运性质

采用等离子体化学气相沉积技术制备氢化非晶硅薄膜,经过不同温度下的热退火处理,使薄膜由非晶结构向晶化结构转变,得到含有纳米晶粒的晶化硅薄膜.在晶化过程中,采用Raman技术对样品的结构进行表征.通过变温电导率的测试,对薄膜的电学输运性质进行了分析.研究结果表明：退火温度为700 ℃时,样品中开始有纳米晶形成,随着退火温度的增加,样品的晶化比增大,在1000 ℃时,薄膜的晶化比达到90%以上.在700 ℃退火时,薄膜中晶化成分较低,载流子的传输特性主要受到与硅悬挂键有关的缺陷态影响,表现为带尾定域态的跳跃电导 关键词： 氢化非晶硅 退火 纳米硅 电输运     

Si基Bi3.25La0.75Ti3O12铁电薄膜的制备与特性研究

采用Sol-Gel工艺低温制备了Si基Bi3.25La0.75Ti3O12铁电薄膜.研究了退火温度对薄膜微观结构、介电特性与铁电性能的影响.500℃退火处理的Bi3.25La0.75Ti3O12薄膜未能充分晶化,晶粒细小且有非晶团聚,介电与铁电性能均较差.高于550℃退火处理的Bi3.25La0.75Ti3O12薄膜表面平整无裂纹,晶粒均匀,无焦碌石相或其他杂相,薄膜为多晶生长,具有较好的介电与铁电性能,4V电压下的漏电流密度低于2×10-8A/cm2.随退火温度升高,晶化程度的提升和晶粒尺寸的增大使薄膜的剩余极化增大而矫顽电场降低.600℃退火处理的Bi3.25La0.75Ti3O12薄膜显示了优于Bi4Ti3O12薄膜的铁电性能,其剩余极化Pr和矫顽电场Ec分别达到17.5μC/cm2和102kV/cm.     

Fabrication of large-grain polycrystalline Ge films using absorptive films

Amorphous germanium (a-Ge) films in samples with or without an absorptive film are crystallized by short-pulse XeF excimer laser crystallization (ELC). An in situ time-resolved optical reflection and transmission (TRORT) monitoring system combining a cw He-Ne probe laser, a digital oscilloscope and two photodetectors is developed to investigate the melting and resolidification dynamics of Ge films during ELC. TRORT measurements reveal that the longest melt duration is prolonged from 250 to 1000 ns by adding absorptive films in the samples. Absorptive films are shown to be effective in improving the melt duration of the molten state and the grain size of polycrystalline Ge films. The grain size with a diameter of approximately 12 μm can be fabricated in the superlateral growth regime for 90-nm-thick a-Ge films at room temperature in air by single-shot ELC.     

Octaethylporphin films. II absorption and emission of amorphous films

Amorphous thin films octaethylporphin have been prepared and are observed to crystallize over time if thicker than about 100 nm. Transmission spectra of amorphous films have a sharper Soret band than transmission spectra of crystalline films and lack the exciton band seen in crystalline films. The exciton band can be resolved in amorphous films by taking a difference spectrum between two amorphous films of different thickness. Fluorescence is observed from one impurity in amorphous films as compared to two impurities in crystalline films. This indicates a smaller exciton diffusion length in amorphous films as compared to crystalline films, consistent with the differences in the transmission spectra of the two kinds of film.     

Rapid crystallization of silicon films using Joule heating of metal films

50-nm thick amorphous silicon films formed on glass substrates were crystallized by rapid Joule heating induced by an electrical current flowing in 100-nm-thick Cr strips formed adjacently to 200-nm-thick SiO₂ intermediate layers. 3-μs-pulsed voltages were applied to the Cr strips. Melting of the Cr strips caused a high Joule heating intensity of about 1×10⁶ W/cm². Raman scattering measurements revealed complete crystallization of the silicon films at a Joule heating energy of 1.9 J/cm² via the SiO₂ intermediate layer. Transmission electron microscopy measurements confirmed a crystalline grain size of 50–100 nm. 1-μm-long crystalline grain growth was also observed just beneath the edge of the Cr strips. The electrical conductivity increased from 10^-5 S/cm to 0.3 S/cm for 7×10¹⁷-cm^-3-phosphorus-doped silicon films because of activation of the phosphorus atoms because of crystallization. The numerical analysis showed a density of localized defect states at the mid gap of 8.0×10¹⁷ cm^-3. Oxygen plasma treatment at 250 °C and 100 W for 5 min reduced the density of the defect states to 2.7×10¹⁷ cm^-3. Received: 3 April 2001 / Accepted: 9 April 2001 / Published online: 25 July 2001     

Stability of soap films: hysteresis and nucleation of black films

We study the stability of soap films of a nonionic surfactant under different applied capillary pressures on the film. Depending on the pressure, either a thick common black film (CBF), or a micro-scopically thin Newton black film (NBF) is formed as a (metastable) equilibrium state, with a first-order (discontinuous) transition between the two. Studying the dynamics of the CBF-NBF transition, it is found that under certain conditions a hysteresis for the transition is observed: for a given range of pressures, either of the two states may be observed. We quantify the nucleation process that is at the basis of these observations both experimentally and theoretically.     

ZnO退火条件对硫化法制备的ZnS薄膜特性的影响

采用反应磁控溅射法在玻璃和石英衬底上沉积了ZnO薄膜, 然后经过不同条件退火和在H22S气氛中硫化最终得到ZnS薄膜. 用x射线粉末衍射仪、扫描电子显微镜和UV—VIS分光光度计 对ZnS薄膜样品进行了分析. 结果表明, ZnO薄膜硫化后的晶体结构和光学性质取决于它的退 火条件. 真空和纯O2₂中退火的ZnO薄膜硫化后只是部分形成六角晶系结构的ZnS . 而在空气 和纯N2₂中退火的ZnO薄膜则全部转变为ZnS, 在可见光范围内的光透过率 关键词： ZnS薄膜 磁控溅射 ZnO硫化 太阳电池     

Dielectric properties of anodic films on sputter-deposited Ti-Si porous columnar films

For electrolytic capacitor application of the single-phase Ti alloys containing supersaturated silicon, which form anodic oxide films with superior dielectric properties, porous Ti-7 at% Si columnar films, as well as Ti columnar films, have been prepared by oblique angle magnetron sputtering on to aluminum substrate with a concave cell structure to enhance the surface area and hence capacitance. The deposited films of both Ti and Ti-7 at% Si have isolated columnar morphology with each column revealing nanogranular texture. The distances between columns are ∼500 nm, corresponding to the cell size of the textured substrate and the gaps between columns are 100-200 nm. When the porous Ti-7 at% Si film is anodized at a constant current density in ammonium pentaborate electrolyte, the growth of a uniform amorphous oxide film continues to ∼35 V, while it is limited to less than 6 V on the porous Ti film. The maximum voltage of the growth of uniform amorphous oxide films on the Ti-7 at% Si films is similar for both the flat and porous columnar films, suggesting little influence of surface roughness on the amorphous-to-crystalline transition of growing anodic oxide under the high electric field. Due to the suppression of crystallization to sufficiently high voltages, the anodic oxide films formed on the porous Ti-7 at% Si film shows markedly improved dielectric properties, in comparison with those on the porous Ti film.     

Rapid joule heating of metal films used to crystallize silicon films

We analyzed the rapid heating properties of 50-nm-thick silicon films via 250-nm-thick SiO₂ intermediate layers by heat diffusion from joule heating induced by electrical current flow in chromium strips. Numerical heat-flow simulation resulted in that the silicon films were heated to the melting point by a joule-heating intensity above 1 MW/cm². A marked increase in electrical conductance associated with silicon melting was experimentally detected. Taper-shaped chromium strips detected the temperature gradient in the lateral direction caused by the spatial distribution of the joule-heating intensity. Crystallization occurred according to the temperature gradient. A 2–4-μm lateral crystalline grain growth was demonstrated for the silicon films. Received: 20 November 2001 / Accepted: 22 November 2001 / Published online: 20 March 2002