铝诱导非晶硅薄膜的场致低温快速晶化及其结构表征

铝诱导非晶硅薄膜晶化可以降低退火温度、缩短退火时间，是制备多晶硅薄膜的一种重要方法.在此基础上，通过在退火过程中加入电场加速了界面处硅、铝原子间的互扩散，实现了非晶硅薄膜的快速低温晶化.实验结果表明，外加电场，退火温度为400℃，退火时间为60min时，薄膜的晶化率大于60％；退火温度为450℃退火时间为30min时，薄膜已经呈现明显的晶化现象；退火温度为500℃退火时间为15min时，薄膜的x射线多晶峰强度与非晶峰强度之比为未加电场的3—4倍. 关键词： 非晶硅薄膜 多晶硅薄膜 外加电场

Aluminum-induced rapid crystallization of a-Si films at low temperatures in an electric field and microstructure analyses of the crystallized films

Aluminum-induced crystallization of amorphouse silicon (a-Si) is a suitable method for preparation of polycrystalline silicon (poly-Si) films. Biasing an electric field, which is perpendicular to the surface of the a-Si films, will accelerate the mutual diffusion of Al atoms and Si atoms in the interface during the aluminum-induced crystallization process and enhance the crystallization of the a-Si films obviously. The experimental results show that under the action of the electric field, more than 60% of a-Si transfer into poly-Si when the a-Si film was annealed at T_a＝400℃ and annealing time t_a=60min; the a-Si films have obviously crystallized at T_a＝450℃ and t_a=30min; at T_a＝500℃ and t_a=15min, the XRD intensity of crystalline silicon (c-Si) components in the films is thrice to fourfold as strong as that in the films without the effect of an electric field.