硒化锌衬底表面仿生宽带增透微结构的设计及制作

采用时域有限差分法研究了硒化锌基底的抛物线型周期阵列仿生微结构的光学性质,重点分析了微结构阵列的周期、高度、占空比和形状轮廓等对反射率的影响,得到了有较好增透效果的结构参数。根据模拟参数进行两次干涉曝光制备掩模,采用反应离子刻蚀技术制备周期阵列微结构。通过场发射扫描电子显微镜对微结构的表面形貌进行表征,并采用傅里叶变换红外光谱仪在中红外波段分别对双面抛光、单面微结构的硒化锌片进行透过率测试。结果表明:单面微结构样品在2~5μm范围内的整体平均透过率比双面抛光硒化锌基片提高了10%,在2.3μm处的最大透过率为82%。     

Intrinsic ZnO films fabricated by DC sputtering from oxygen-deficient targets for Cu(In,Ga)Se_2 solar cell application

Intrinsic zinc oxide films,normally deposited by radio frequency(RF) sputtering,are fabricated by direct current(DC) sputtering.The oxygen-deficient targets are prepared via a newly developed double crucible method.The 800-nm-thick film obtaines significantly higher carrier mobility compareing with that of the 800-nm-thick ZnO film.This is achieved by the widely used RF sputtering,which favors the prevention of carrier recombination at the interfaces and reduction of the series resistance of solar cells.The optimal ZnO film is used in a Cu(ln,Ga) Se2(CIGS) solar cell with a high efficiency of 11.57%.This letter demonstrates that the insulating ZnO films can be deposited by DC sputtering from oxygen-deficient ZnO targets to lower the cost of thin film solar cells.     

ZnO退火条件对硫化法制备的ZnS薄膜特性的影响

采用反应磁控溅射法在玻璃和石英衬底上沉积了ZnO薄膜, 然后经过不同条件退火和在H22S气氛中硫化最终得到ZnS薄膜. 用x射线粉末衍射仪、扫描电子显微镜和UV—VIS分光光度计 对ZnS薄膜样品进行了分析. 结果表明, ZnO薄膜硫化后的晶体结构和光学性质取决于它的退 火条件. 真空和纯O2₂中退火的ZnO薄膜硫化后只是部分形成六角晶系结构的ZnS . 而在空气 和纯N2₂中退火的ZnO薄膜则全部转变为ZnS, 在可见光范围内的光透过率 关键词： ZnS薄膜 磁控溅射 ZnO硫化 太阳电池