沉积参数对SiNx薄膜结构及阻透性能的影响

利用直流脉冲磁控溅射法在室温下制备无氢SiNx,薄膜.通过傅里叶变换红外光谱、台阶仪、紫外一可见分光光度计、接触角测量仪、透湿测试仪等表征技术,分析了N2流量、Si靶溅射功率等实验参数对SiNx薄膜成分、结构、及阻透性能、透光性能、接触角等性能的影响.研究结果表明,Si靶溅射功率固定时,在低N2流量条件下,或N2流量固定时,在高Si靶溅射功率条件下,制备的SiN,薄膜中Si-N键含量高,结构致密,薄膜对H2O的阻透性能优良,随着N2流量的增加或者Si靶溅射功率的降低,SiNx,薄膜成分、结构发生变化,红外光谱发生偏移,其对H2O的阻透性能下降.在N2流量为6 sccm,Si靶溅射功率为300 W时制备的SiN,薄膜在可见光波段透过率超过97.5%,对H2O的接触角为30,同时其对H2O的渗透系数最低,为0.764,综合性能满足柔性有机电致发光器件封装用阻透膜的要求,因此SiNx薄膜有望成为新一代柔性有机电致发光器件封装用阻透材料.     

微波ECR磁控溅射制备SiNx薄膜的XPS结构研究

利用微波电子回旋共振等离子体增强非平衡磁控溅射法在不同N₂流量下制备无氢SiN_x薄膜.通过X光电子能谱、纳米硬度仪等表征技术,研究了不同N₂流量下制备的SiN_x薄膜的化学键结构、化学键含量、元素配比及各元素沿深度分布.研究结果表明,N₂流量是影响SiN_x薄膜化学键结构、元素配比、元素延深度分布等性质的主要因素.在N_{2关键词： x}')" href="#">SiN_x 磁控溅射 XPS 化学键结构     

微波ECR等离子体增强磁控溅射制备SiNx薄膜及其性能分析

利用微波ECR磁控反应溅射法在室温下制备无氢SiN_x薄膜.通过傅里叶红外光谱 、X射线电子谱、膜厚仪、纳米硬度仪、原子力显微镜等分析手段，分析了N₂流 量、Si靶溅射功率等实验参数对SiN_x薄膜结构、化学配比以及机械性质的影响. 结果表明，SiN_x薄膜中Si-N结构、化学配比及机械性质与等离子体中的Si元素 含量关系密切，随着N₂流量的增加或者Si靶溅射功率的降低，等离子体中的Si 元素含量降低，SiN_x薄膜结构、化学配比及硬度发生变化，红外光谱发生偏移 ，硬度下降，沉积速率降低. 关键词： x')" href="#">SiN_x 磁控溅射 傅里叶变换红外吸收光谱 X射线电子谱     

基片温度对SiNx薄膜结晶状态及机械性能的影响

利用微波电子回旋共振增强磁控反应溅射法在不同基片温度下制备无氢SiN_x薄膜.通过傅里叶变换红外光谱、透射电子显微镜、台阶仪、纳米硬度仪等表征技术,研究了基片温度对SiN_x薄膜结晶状态、晶粒尺寸、晶体取向等结晶性能以及薄膜的生长速率、硬度等机械性能的影响,并探讨了薄膜结晶性能与机械性能之间的关系.研究结果表明,在基片温度低于300℃时制备的SiN_x薄膜以非晶状态存在,硬度值仅为18GPa左右;基片温度 关键词： x')" href="#">SiN_x 磁控溅射 微观结构 硬度     

线性微波化学气相沉积制备SiNx薄膜的微结构及光学性能研究

利用自主研发的线性微波化学气相沉积系统在不同微波功率、微波占空比、基片温度、特气比例条件下制备了SiN_x薄膜. 通过扫描电子显微镜、椭圆偏振仪等表征测量技术, 研究了不同工艺参数对SiN_x薄膜表面形貌、元素配比、折射率、沉积速度的影响, 并探讨了薄膜元素配比、折射率、沉积速度间的关系. 结果表明: 利用线性微波沉积技术, 不同工艺参数下制备的SiN_x薄膜组成元素分布均匀, 同时具有平整的表面状态; 特气比例和微波占空比是影响薄膜折射率的最主要因素, 薄膜折射率在1.92–2.33之间连续可调; 微波功率、微波占空比、沉积温度、特气比例都对SiN_x 薄膜沉积速度影响较大, 制备的SiN_x薄膜最大沉积速度为135 nm·min^-1.     

溅射压强对TiN/SiNx纳米多层膜微观结构及力学性能的影响

利用磁控溅射方法在不同溅射压强条件下制备了TiN/SiN_x纳米多层膜.多层膜的微观结构及力学性能分别用X射线衍射仪、原子力显微镜及纳米压痕仪来表征.结果表明随着溅射压强的增大,多层膜的界面变模糊,TiN层的择优取向由(200)晶面过渡到(111)晶面.与此同时,多层膜的表面粗糙度增大,硬度和弹性模量随溅射压强的增大而减小.多层膜力学性能的差异主要是由于薄膜的周期性结构及致密度存在差异所致. 关键词： x多层膜')" href="#">TiN/SiN_x多层膜 界面宽度 表面形貌     

H2 气对脉冲磁控溅射铝掺杂氧化锌薄膜性能的影响

实验采用脉冲磁控溅射法制备铝掺杂氧化锌(AZO)薄膜.为了进一步提高AZO薄膜的光电性能,在溅射过程中加入一定流量的氢气,以高纯ZnO ∶Al₂O₃陶瓷靶为溅射靶材,制备AZO/H透明导电薄膜.通过测试薄膜的结构特性、表面形貌及其光电性能,详细地研究了氢气流量对AZO薄膜性能的影响.溅射过程中引入氢气,可以促进薄膜的晶化,提高薄膜的迁移率和透过率(400—1100 nm).采用纯氩气溅射制备AZO薄膜的电阻率为5.664×10^-4 Ω·cm 关键词： 氧化锌 氢气流量 磁控溅射 太阳电池     

GeC薄膜的射频磁控反应溅射制备及性质

用射频磁控反应溅射法在ZnS衬底上制备了GeC薄膜,研究了工艺参数对Ge靶溅射及GeC薄膜红外透射性能的影响.衬底温度较低时GeC薄膜中含有H,形成了CH₂,CH₃,Ge-CH₃等,使薄膜产生红外吸收;随衬底温度升高,薄膜红外吸收明显减小.靶基距、射频功率、Ar:CH₄气体流量比、总气压对靶面中毒及溅射影响较大,但对GeC薄膜红外吸收影响较小.靶面中毒严重时,所制备无氢GeC薄膜附着性能差,随靶中毒减弱薄膜附着性能变好.优化工艺后,在ZnS衬底上制备了附着性能良好的无氢GeC薄膜,其折射率约为1.78,薄膜中C的含量比Ge的大,二者主要形成了C—Ge键.所制备的GeC/GaP红外增透保护膜系对ZnS衬底有良好的增透效果. 关键词： GeC薄膜 红外透射光谱 射频磁控溅射 XPS     

溅射气氛对N掺杂ZnO薄膜性能的影响

利用磁控溅射系统,N₂和Ar作为溅射气体,生长N掺杂ZnO薄膜。溅射气氛中氮气流量分别为0,8,20,32 mL/min,通过改变氮气的流量,研究薄膜性能的变化。结果发现,随着溅射气氛中氮气流量的增加,薄膜的电阻率增加,薄膜中N_O与(N₂)_O的掺杂浓度同时在变大。当氮气流量为8 mL/min时,N的有效掺杂效率最高。另外,随着溅射气氛中氮气流量的增加,薄膜的厚度在减小。     

溅射制备Ta2O5薄膜的表面形貌与光学特性

在室温条件下利用溅射Ta₂O₅靶材的方法制备了Ta₂O₅薄膜,并采用将薄膜两侧的反射率光谱进行比较的简便方法分析评估薄膜的光吸收,发现溅射制备薄膜的额外光吸收源是溅射引起的缺氧形成的,选择适当的溅射功率和含氧比例的工作气体能有效地消除这些缺陷、不用任何加温处理就可制备得到表面平坦和高致密度的高品质Ta₂O₅薄膜. 关键词： 2O₅薄膜')" href="#">Ta₂O₅薄膜 光吸收 表面形貌 磁控溅射     

Structural evolution of SiNx films deposited by ECR and its light emission

Structural and optical properties of a-SiN_x films deposited by electron cyclotron resonance chemical vapor deposition (ECRCVD) have been investigated. The Fourier transform infrared (FTIR) spectroscopy shows the structural evolution of the SiN_x films, which are defined as Si-rich SiN_x and N-rich SiN_x films, also confirmed by Raman spectroscopy. The origin of the light emission for SiN_x films may be attributed to two mechanisms, i.e., quantum confinement effect (QCE) and transition of defect energy levels. The correlation between light emission and structures of SiN_x films is discussed.     

Si-nanostructures formation in amorphous silicon nitride SiNx:H deposited by remote PECVD

The formation of silicon nanoclusters embedded in amorphous silicon nitride (SiN_x:H) can be of great interest for optoelectronic devices such as solar cells. Here amorphous SiN_x:H layers have been deposited by remote microwave-assisted chemical vapor deposition at 300 °C substrate temperature and with different ammonia [NH₃]/silane [SiH₄] gas flow ratios (R=0.5−5). Post-thermal annealing was carried out at 700 °C during 30 min to form the silicon nanoclusters. The composition of the layers was determined by Rutherford back scattering (RBS) and elastic recoil detection analysis (ERDA). Fourier transform infrared spectroscopy (FTIR) showed that the densities of SiH (2160 cm⁻¹) and NH (3330 cm⁻¹) molecules are reduced after thermal annealing for SiN:H films deposited at flow gas ratio R>1.5. Breaking the SiH bonding provide Si atoms in excess in the bulk of the layer, which can nucleate and form Si nanostructures. The analysis of the photoluminescence (PL) spectra for different stoichiometric layers showed a strong dependence of the peak characteristics (position, intensity, etc.) on the gas flow ratio. On the other hand, transmission electron microscopy (TEM) analysis proves the presence of silicon nanoclusters embedded in the films deposited at a gas flow ratio of R=2 and annealed at 700 °C (30 min).     

氮化硅薄膜中纳米非晶硅颗粒的键合结构及光致发光

采用螺旋波等离子体化学气相沉积技术以N₂/SiH₄/H₂为反应气体制备了镶嵌有纳米非晶硅颗粒的氢化氮化硅薄膜,通过改变N₂流量实现了薄膜从红到蓝绿的可调谐光致发光.傅里叶红外透射和紫外-可见光吸收特性分析表明,所生长薄膜具有较高的氢含量,N₂流量增加使氢的键合结构发生变化,非晶硅颗粒尺寸减小,所对应的薄膜的光学带隙逐渐增加和微观结构有序度减小.可调光致发光(PL)主要来源于纳米硅颗粒的量子限制效应发光,随N₂流量增加,PL的谱线展宽并逐渐增强. 关键词： 傅里叶红外透射谱 光吸收谱 纳米硅粒子镶嵌薄膜 光致发光     

Effect of nitrogen content on phase configuration, nanostructure and mechanical behaviors in magnetron sputtered SiCxNy thin films

SiC_xN_y thin films with different nitrogen contents were deposited by way of incorporation of different amounts of nitrogen into SiC_0.70 using unbalanced reactive dc magnetron sputtering method. Their phase configurations, nanostructures and mechanical behaviors were investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, high-resolution transmission electron microscopy (HRTEM) and microindentation methods. The result indicated SiC_0.70 and all SiC_xN_y thin films exhibited amorphous irrespective of the nitrogen content. The phase configuration and mechanical behaviors of SiC_xN_y thin films strongly depended on nitrogen content. SiC_0.70 exhibited a mixture consisting of SiC, Si and a small amount of C. Incorporated nitrogen, on one hand linked to Si, forming SiN_x, on the other hand produced CN_x and C at the expense of SiC. As a result, an amorphous mixture consisting of SiC, SiN_x, C and CN_x were produced. Such effects were enhanced with increase of nitrogen content. A low hardness of about 16.5 GPa was obtained at nitrogen-free SiC_0.70. Incorporation of nitrogen or increase of nitrogen content increased the film hardness. A microhardness maximum of ∼29 GPa was obtained at a nitrogen content of 15.7 at.%. This value was decreased with further increase of N content, and finally a hardness value of ∼22 GPa was obtained at a N content of ∼25 at.%. The residual compressive stress was consistent with the hardness in the nitrogen content range of 8.6-25.3 at.%.     

基于等离子体增强化学气相沉积技术的光电子器件多层抗反膜的设计和制作

针对光电子器件端面抗反镀膜的要求,研究了基于等离子体增强化学气相沉积(PECVD)技术的多层抗反膜的设计和制作.首先,对影响SiN_x折射率的因素进行了实验研究,确定了具有大折射率差的SiO₂/SiN_x材料的PECVD沉积条件.根据理论计算分析,设计了四层SiO₂/SiN_x抗反膜结构,能够在70 nm的波长范围内实现低于10^-4的反射率     

脉冲偏压电弧离子镀CNx薄膜研究

用脉冲偏压电弧离子镀通过控制不同的氮流量在(100)单晶Si基片上制备了不同成分的CN_x薄膜.用光学显微镜,XPS,XRD,激光Raman和Nanoindenter等方法研究了薄膜的形貌、成分、结构和性能.结果表明,薄膜表面平整致密、氮含量随着氮流量的降低而降低、结构为非晶且为类金刚石薄膜;随着氮含量从18.9%降低到5.3%(摩尔百分比,全文同),薄膜的硬度和弹性模量单调增加而且增幅较大,其中硬度从15.0 GPa成倍增加到30.0 GPa;通过氮流量的调整能够敏感地改变薄膜中的sp³键的含量,是CN_x薄膜的硬度和弹性模量获得大幅度调整的本质原因. 关键词： x薄膜')" href="#">CN_x薄膜 脉冲偏压 电弧离子镀 硬度     

Effects of the sputtering power on the crystalline structure and optical properties of the silver oxide films deposited using direct-current reactive magnetron sputtering

This paper reports that a series of silver oxide (Ag_xO) films are deposited on glass substrates by direct-current reactive magnetron sputtering at a substrate temperature of 250 oC and an oxygen flux ratio of 15:18 by modifying the sputtering power (SP). The Ag_xO films deposited apparently show a structural evolution from cubic biphased (AgO + Ag₂O) to cubic single-phased (Ag₂O), and to biphased (Ag₂O + AgO) structure. Notably, the cubic single-phased Ag₂O film is deposited at the SP = 105 W and an AgO phase with <220> orientation discerned in the Ag_xO films deposited using the SP > 105 W. The transmissivity and reflectivity of the Ag_xO films in transparent region decrease with the increase the SP, whereas the absorptivity inversely increases with the increase of the SP. These results may be due to the structural evolution and the increasing film thickness. A redshift of the films' absorption edges determined in terms of Tauc formula clearly occurs from 3.1 eV to 2.73 eV with the increase of the SP.     

Characterization of Zr-Si-N films deposited by cathodic vacuum arc with different N2/SiH4 flow rates

Zr-Si-N films were deposited on silicon and steel substrates by cathodic vacuum arc with different N₂/SiH₄ flow rates. The N₂/SiH₄ flow rates were adjusted at the range from 0 to 12 sccm. The films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), hardness and wear tests. The structure and the mechanical properties of Zr-Si-N films were compared to those of ZrN films. The results of XRD and XPS showed that Zr-Si-N films consisted of ZrN crystallites and SiN_x amorphous phase. With increasing N₂/SiH₄ flow rates, the orientation of Zr-Si-N films became to a mixture of (1 1 1) and (2 0 0). The column width became smaller, and then appeared to vanish with the increase in N₂/SiH₄ flow rates. The hardness and Young's modulus of Zr-Si-N films increased with the N₂/SiH₄ flow rates, reached a maximum value of 36 GPa and 320 GPa at 9 sccm, and then decreased 32 GPa and 305 GPa at 12 sccm, respectively. A low and stable of friction coefficient was obtained for the Zr-Si-N films. Friction coefficient was about 0.1.