基片温度对SiNx薄膜结晶状态及机械性能的影响

利用微波电子回旋共振增强磁控反应溅射法在不同基片温度下制备无氢SiN_x薄膜.通过傅里叶变换红外光谱、透射电子显微镜、台阶仪、纳米硬度仪等表征技术，研究了基片温度对SiN_x薄膜结晶状态、晶粒尺寸、晶体取向等结晶性能以及薄膜的生长速率、硬度等机械性能的影响，并探讨了薄膜结晶性能与机械性能之间的关系.研究结果表明，在基片温度低于300℃时制备的SiN_x薄膜以非晶状态存在，硬度值仅为18GPa左右；基片温度 关键词： x')" href="#">SiN_x 磁控溅射 微观结构 硬度

Influences of substrate temperature on crystalline characteristics and mechanical properties of SiNx films deposited by microwave electron cyclotron resonance magnetron sputtering

Hydrogen-free SiN_x films were deposited at substrate temperature ranging from room temperature to 700℃ by microwave electron cyclotron resonance plasma enhanced unbalanced magnetron sputtering system. We have studied the influence of substrate temperature on the structural characteristics of deposited films including growth rate, microstructure, grain size, and hardness by using transmission electron microscopy, Fourier-transform infrared spectroscopy, and nano-indentation. The results indicate that the films deposited at room temperature are amorphous, and α-Si₃N₄ grains with random epitaxial sizes appear when substrate temperature is higher than 300℃. The α-Si₃N₄ grain size increases with substrate temperature up to 620℃, and then decreases at 700℃. At 700℃, the grains have uniform epitaxial sizes, and value of the film hardness reaches the maximum (36.7GPa).