GaN基三维结构生长与器件应用

目前,c面氮化镓(GaN)基发光二极管的制备技术已经十分成熟并取得了商业化成功,但仍面临极化电场导致的大电流密度下效率下降(Droop效应)和黄绿光波段效率低的问题.为消除极化电场的影响,人们开始关注半极性和非极性面GaN.其中,基于传统极性面衬底通过三维结构生长来获得半极性和非极性GaN的方法,由于其低成本和生长的灵活性,受到了广泛研究.本文首先总结了三种GaN三维结构的制备方法并分析其生长机理.接着,在此基础上介绍了不同晶面InGaN量子阱的外延生长和发光特性.最后,列举了GaN基三维结构在半极性面LED、颜色可调LED和无荧光粉白光发光二极管方面的应用.     

Vertical and Smooth, etching of InP by Cl2／CH4／Ar Inductively Coupled Plasma at Room Temperature

We study the room-temperature dry, etching of InP by inductively coupled plasma (ICP) using C12/CH4/Ar mixtures. Etches were characterized in terms of anisotropy and surface roughness by scanning electron microscopy and atomic force microscopy, respectively. It is found that the flow ratio between C12 and Ctt4, ICP power, rf chuck power, and table temperature can greatly influence the, etching results. By adjusting, etching parameters,vertical sidewall and smooth surface can be obtained simultaneously, together with a moderate, etch rate and a good select ratio. The root-mean-square surface roughness is measured to be as low as 0.27nm. To the best of our knowledge, this is the best result for InP to date. The, etch rate is 855nm/min, and the selectivity ratio overSi02 is estimated to be higher than 15:1. The stoichiometry of the, etched surface has also been investigated by Auger electron spectroscopy. The, etched surface is found to manifest a slight P deficiency, and the ratio between P and In reaches the stoichiometric value within about 0.75nm depth into the surface.     

Deep InP Gratings for Opto-Electronic Devices Etched by C12/CH4/Ar Inductively Coupled Plasma

Deep InP gratings are etched by C12/CH4/Ar inductively coupled plasma （ICP） at room temperature. A comparison is made between SiNz mask patterns formed by wet and dry etching. SF6 reactive ion etching is adopted for smooth and vertical sidewall. The etching conditions of C12/CH4/Ar ICP are optimized for high anisotropy, and a 1.7-μm-deep InP grating with an aspect ratio of 10：1 is demonstrated. The technique is then used for the fabrication of 1.55-μm laterally coupled distributed feedback A1GMnAs-InP laser.     

230Acβ延发裂变的观测

搜索了230Ac β延发裂变. 由60MeV/u18O离子照射232Th,通过多核子转移反应产生230Ra. 经放射化学分离和薄的230Raβ- 230 Ac源的制备,获得了108个230Ac原子. 该源对云母裂变径迹探测器曝光. 借助于所测的γ能谱和两个裂变事件,鉴别了β延发裂变核230Ac,得到了它的β延发裂变几率为(1.19±0.85)×10-8.     

Study on the saturation characteristics of high-speed uni-traveling-carrier photodiodes based on field screening analysis

A back-illuminated mesa-structure InGaAs/InP charge-compensated uni-traveling-carrier(UTC) photodiode(PD) is fabricated,and its saturation characteristics are investigated.The responsivity of the 40-μmdiameter PD is as high as 0.83 A/W,and the direct current(DC) saturation current is up to 275 mA.The 1-dB compression point at the 3-dB cutoff frequency of 9 GHz is measured to be 100 mA,corresponding to an output radio frequency(RF) power of up to 20.1 dBm.According to the calculated electric field distributions in the depleted region under both DC and alternating current(AC) conditions,the saturation of the UTC-PD is caused by complete field screening at high optical injection levels.     

Studies on the nucleation of MBE grown III-nitride nanowires on Si

GaN and AlN nanowires (NWs) have attracted great interests for the fabrication of novel nano-sized devices. In this paper, the nucleation processes of GaN and AlN NWs grown on Si substrates by molecular beam epitaxy (MBE) are investigated. It is found that GaN NWs nucleated on in-situ formed Si₃N₄ fully release the stress upon the interface between GaN NW and amorphous Si₃N₄ layer, while AlN NWs nucleated by aluminization process gradually release the stress during growth. Depending on the strain status as well as the migration ability of III group adatoms, the different growth kinetics of GaN and AlN NWs result in different NW morphologies, i.e., GaN NWs with uniform radii and AlN NWs with tapered bases.     

含五元杂环的聚酰亚胺的合成与性能研究

以多聚磷酸为溶剂,4-氨基苯甲酸与硫代氨基脲反应制得一种含噻二唑环的二胺单体4-(5-对氨基苯基)-1,3,4-噻二唑苯胺(2); 2与均苯四酸二酐反应合成了含五元杂环的聚酰亚胺(3),其结构和性能经¹H NMR, FT-IR和TGA表征,并研究了3的溶解性能。结果表明：3的热稳定性较好,T_5%为402 ℃。 3在二甲基亚砜、DMF和N-甲基吡咯烷酮等溶剂中溶解性较好。     

新核素238Th的鉴别

利用60MeV/u的¹⁸O离子束轰击天然铀靶,通过多核子转移反应生成重丰中子新核素²³⁸Th.观测到了²³⁸Th的子体²³⁸Paγ活性的生长、衰变行为,鉴别了²³⁸Th的存在,并测得它的半衰期为(9.4±2.0)min.同时,发现了一条能量为(89.0±0.3)keV、半衰期为(8.9±1.5)min的新γ射线,指定为²³⁸Th的衰变γ射线.     

红外波长上转换器件中载流子阻挡结构的研究

复杂半导体材料结构中的载流子分布特性对器件性能有重要影响. 本文针对一种新型的波长上转换红外探测器, 研究了载流子阻挡结构对载流子分布和器件特性的影响. 论文通过自洽求解薛定谔方程、泊松方程、电流连续性方程和载流子速率方程分析了不同器件结构中的空穴分布. 同时, 生长了相应结构的外延材料, 并通过电致荧光谱分析了载流子阻挡结构对器件特性的影响. 结果表明, 2 nm厚的AlAs势垒层既能有效阻挡空穴又不影响电子输运, 有利于制作波长上转换红外探测器. 此外, 论文分析了阻挡势垒层的厚度和高度以及工作温度对载流子分布的影响. 本文研究结果亦可应用于其他载流子非均匀分布的半导体器件.     

利用表面微结构提高波长上转换红外探测器效率

波长上转换红外探测器具有实现大面阵焦平面的优势, 但光提取效率是制约器件整体效率的关键因素之一. 本文主要研究利用表面微结构来提高波长上转换红外探测器的效率. 首先通过仿真计算研究了表面微结构参数对光提取效率的影响, 然后基于优化设计的参数, 采用聚苯乙烯纳米球掩膜刻蚀的方法制作了具有圆台型表面微结构的波长上转换红外探测器. 测试结果表明, 具有表面微结构的器件的光提取效率比无表面微结构的器件提高了130%. 本文制作表面微结构的方法可以实现波长上转换红外探测器件整体效率的提高.