MBE生长ZnO薄膜的结构和光学特性的研究

用等离子体源辅助分子束外延(P-MBE)方法在蓝宝石(0001)面上生长出了高质量的ZnO薄膜,并对其结构和发光特性进行了研究。在XRD中只观察到ZnO薄膜的(0002)衍射峰,其半高宽(FWHM)值为0.18°;而在共振Raman散射光谱中观测到1LO(579 cm-1 )和2LO(1 152 cm-1 )两个峰位,这些结果表明ZnO薄膜具有单一c轴取向和高质量的纤维锌矿晶体结构。在吸收光谱中观测到自由激子吸收和激子-LO声子吸收峰,这表明在ZnO薄膜中激子稳定的存在于室温,并且两峰之间能量间隔为71.2 meV,与文献上报道的ZnO纵向光学声子能量(71 meV)相符。室温下在光致发光光谱(PL)中仅观测到位于376 nm处的自由激子发光峰,而没有观测到与缺陷相关的深能级发射峰,表明ZnO薄膜具有较高的质量和低的缺陷密度。     

A面(11-20)ZnO薄膜中杂质的偏振PL谱研究

本文通过分析A面(11-20)ZnO薄膜的低温PL(光致发光)光谱偏振特性来研究ZnO光致发光谱中杂质峰的来源。低温(4 K)下观察到476、479 nm两处新的杂质峰以及390 nm处激子峰,根据两个杂质峰的偏振特性,初步判定476nm峰来源于氧空位能级到价带轻空穴的跃迁,479 nm峰来源于氧空位价带重空穴的跃迁。     

非掺杂ZnO薄膜中紫外与绿色发光中心

用直流反应溅射方法在硅衬底上淀积了ZnO薄膜,测量它们的光致发光(PL)光谱,观察到两个发光峰,峰值能量分别为3.18(紫外峰,UV)和2.38eV(绿峰).样品用不同温度分别在氧气、氮气和空气中热处理后,测量了PL光谱中绿峰和紫外峰强度随热处理温度和气氛的变化,同时比较了用FP-LMT方法计算的ZnO中几种本征缺陷的能级位置.根据实验和能级计算的结果,推测出ZnO薄膜中的紫外峰与ZnO带边激子跃迁有关,而绿色发光主要来源于导带底到氧错位缺陷(O_Zn)能级的跃迁,而不是通常认为的氧空 关键词： ZnO薄膜 热处理 光致发光光谱 缺陷能级     

常压MOCVD生长ZnO/GaN/Al2O3薄膜及其性能

以去离子水（H2O）和二乙基锌（DEZn）为源材料,生长温度是680℃时,利用常压MOCVD在GaN／Al2O3模板上成功生长了ZnO单晶薄膜,用原子力显微镜（AFM）、X射线双晶衍射（DCXRD）、光致发光谱（PL）对ZnO薄膜的表面形貌、结晶学性质、光学性质作了综合研究。双晶衍射表明,ZnO非对称（1012）面ω扫描的半峰全宽（FWHM）仅为420arcsec,估算所生长ZnO膜的位错密度大约为10^3／cm^2量级,这与具有器件质量的GaN材料的位错密度相当。在ZnO薄膜的低温15K光荧光谱中,观察到很强的自由激子和束缚激子发射以及自由激子与束缚激子的多级声子伴线。     

准波导结构下染料薄膜的荧光光谱和放大自发辐射光谱特性

通过对RhB/PMMA和Rh6G/PMMA染料薄膜的荧光光谱和放大自发辐射(ASE)光谱的实验测量和理论分析,研究了准波导结构染料薄膜的荧光光谱和ASE光谱特性。实验上采用连续激光和脉冲激光照射,分别测量准波导结构RhB/PMMA和Rh6G/PMMA染料薄膜的荧光光谱和ASE光谱,发现荧光峰和ASE峰随着染料掺杂浓度和薄膜厚度的增加产生红移;理论上考虑准波导结构下薄膜中染料的自吸收效应,类比激光器谐振腔模型,分析低阶导模传输的增益特性,获得了荧光光谱与ASE光谱中荧光峰和ASE峰对应波长与染料掺杂浓度的关系,数值计算与实验测量相吻合。结果表明,准波导结构下薄膜中染料自吸收效应导致荧光峰及ASE峰发生红移,改变染料掺杂浓度,可以在较大调谐范围实现ASE。     

光纤端面微型传感单元的共振模式及影响因素

首先在光纤端面设计一种由金光栅-介质-金薄膜构成的复合结构,并研究多种共振模式随介质层厚度的变化及其场分布特点。然后研究限制在金光栅和金薄膜纳米级间距的波导共振模,通过反射谱的变化和谐振模式的电场分布特点研究不同阶次的纳米谐振效应。此外,还仿真计算金光栅的宽度、厚度及周期、中间介质层折射率和金反射薄膜厚度的变化对纳米谐振腔光谱特性的影响,根据波导模干涉的相位差公式定性分析其谐振频率的变化,并计算获得纳米谐振腔对腔内介质折射率和腔长的灵敏度。最后,搭建微位移平台,验证光纤端面与金薄膜所构成的Fabry-Perot干涉光谱随间距的变化,并提出光纤端面纳米谐振结构的实现方案。     

AlxGa1-xAs/AlyGa1-yAs微腔中的激子吸收增强效应

文章采用Al_xGa_1-xAs/Al_yGa_1-yAs微腔结构,研究了微腔中激子的吸收行为,在室温下观察到了激子吸收的增强效应,激子的峰值吸收强度是自由空间中激子吸收强度的2,6倍;我们从激子与光波场相互作用和腔中模函数的分布建立了计算.激子先吸收的模型,文中给出的微腔结构的数值计算表明激子的吸收增强与实验结果相一致;数值计算表明,微腔中激子吸收的强弱不仅与上、下两腔镜的反射率和腔长有关,而且还取决于量子阱在腔中的位置.     

高质量纳米ZnO薄膜的光致发光特性研究

报道了利用低压-金属有机物化学气相沉积技术生长纳米ZnS薄膜，然后，将ZnS薄膜在氧气中于800℃温度下进行热氧化制备高质量纳米ZnO薄膜.x射线衍射结果表明，纳米ZnO薄膜具有六角纤锌矿多晶结构.室温下观察到一束强的紫外(3.26 eV) 光致发光和很弱的深能级发射.根据激子峰的半高宽度与温度的关系确定了激子-纵向光学声子（LO）的耦合强度（ГLO）.由于量子限域效应使ГLO减少较多. 关键词： 光致发光 热氧化 激子 纳米ZnO薄膜     

Zno纳米晶的室温紫外受激发射特征

ZnO的激子特性对制备氧化锌基的光电子器件至关霞要,因此对ZnO量子点中激子的发光性质及其跃迁过程进行研究显得十分必要.采用溶胶-凝胶法制备了ZnO纳米晶,X射线衍射(XRD)结果表明样品具有六角纤锌矿多晶结构.研究了在不同泵浦功率激发下ZnO纳米晶的紫外发射的时间积分光谱和时间分辨光谱,观察到自南激子发光,激子-激子碰撞和电子-空穴等离子体引起的受激发射,研究了在不同泵浦功率激发下自由激子及激子-激子碰撞随泵浦功率依赖的动力学过程.研究结果对理解激子带边发射有一定帮助,对ZnO材料在短波长半导体光电器件方面有潜在的应用价值.     

氟掺杂的氧化锌薄膜的结构和光学特性

通过热氧化氟化锌(ZnF2)薄膜的方法制备出氟掺杂的多晶ZnO薄膜,ZnF2薄膜是利用电子束蒸发方法沉积在Si(100)衬底得到的。利用X射线衍射和X射线电子能谱研究了ZnF2薄膜向ZnO的转变过程。实验结果表明,在400℃退火30min的条件下能够获得六方纤锌矿结构的ZnO：F薄膜。对ZnO：F薄膜的室温光致发光谱可以观察到位于379nm、半峰全宽为73meV的紫外发射峰,而相应于缺陷的深能级发射则完全猝灭。表明ZnO中残留的F能够有效地增强激子的发光,同时使缺陷发光强度明显降低。对F掺杂对ZnO的发光性能的影响进行了讨论。     

Influence of excitation light wavelength on the photoluminescence properties for ZnO films prepared by magnetron sputtering

Highly orientated polycrystalline ZnO films were deposited on sapphire, silicon and quartz substrates at room temperature by r.f. magnetron sputtering. Different photoluminescence (PL) spectra were observed when excited with different wavelength light. A UV emission peak (356 nm) and a blue peak (446 nm) were generated for the films on sapphire, silicon and quartz substrates, and only the 446 nm blue emission appeared for the films on glass substrates when the wavelength of the excitation light was 270 nm. With increasing the wavelength of the excitation light up to 300 and 320 nm, the UV emission disappeared for films on various substrates and the wavelength of the PL peaks increased up to 488 and 516 nm, respectively. When the wavelength of the excitation light increased to 398 nm, the PL spectrum becomes a wide band that is consistent with three emission peaks.     

紫外光激发下氧化锌纳米线的发光特性研究

室温条件下，用355 nm的激光激发氧化锌纳米线，测量了其发光光谱.观察到半宽度较小、峰值波长约382 nm的紫光峰和半宽度较宽、峰值波长约507 nm的绿光峰；两峰的发光强度随激发光功率密度的变化而变化，且均存在饱和效应，但各自的变化规律及饱和值的大小不同；紫光峰的中心波长随激发光功率密度的增加而发生了明显的红移.对两峰产生的机理、强度饱和值存在的原由、强度随激发光功率密度变化及紫光峰红移的起因进行了分析.     

一维氧化锌柱阵列空间取向激发的荧光光谱研究

用两步气相沉积-氧化法制备了具有高度一致指向性的一维纤锌矿六方结构的氧化锌单晶柱阵列,探测它的不同空间取向激发条件下的荧光光谱。结果表明,一维阵列样品在不同空间取向的激发光照射下,其荧光光谱有明显变化。当低功率355 nm激光对一维方向进行横向激发时,激子发光的相对强度较大;当用1 064 nm 激光取向激发时,发射光谱的差异更明显。除了荧光光谱的发射峰强弱发生变化外,在一维横向激发时上转换发射光谱产生了新的发射峰,表明在不同的取向激发下一维阵列样品对激发光的吸收有明显变化。由此产生的荧光发射的差异非常明显,表明一维氧化锌柱阵列对能量吸收、能量传递等有很强的方向性。上转换偏振光谱表明,当偏振光的振动方向与阵列的一维方向平行时,发射光谱中400 nm的发光峰强度比偏振方向与一维方向垂直时要大,表明偏振方向对一维阵列的空间取向激发荧光光谱是有影响的。在讨论阵列发光性质如发光光谱,发射强度的时候,必须明确激发光的强度、取向以及激发光的偏振方向。     

激光分子束外延方法生长的ZnO薄膜的发光特性

研究了不同温度和不同光激发强度下激光分子束外延方法生长的ZnO薄膜样品的发光性能,发现YAG脉冲激光激发,强度超过一定值时会在长波方向上出现一个新的发光峰,此峰可能起源于电子-空穴的复合。室温下氙灯激发的光谱中可以看到峰值位于381nm的近带边紫外发射峰和位于450nm的强的蓝绿带发射,根据光致发光激发光谱的特征给出了一个简单的蓝光发射模型。对比YAG脉冲激光激发和氙灯激发得到的实验光谱,我们认为不同的光谱特征和样品发光的激发机制有关,紫外峰发射需激发强度超过一定值才能观察到,而蓝带发射则在一定的激发强度下迅速饱和。     

Visible photoluminescence of co-sputtered Ge–Si duplex nanocrystals

The photoluminescence (PL) characteristics of co-sputtered Ge–Si duplex nanocrystal films were examined under excitation by a 325-nm HeCd laser, combined with Raman and Fourier-transform infrared reflection spectra analysis. A broad visible PL spectrum from the as-deposited Ge–Si nanocrystal films was observed in the wavelength range 350–700 nm. Basically, the PL spectrum can be considered to consist of two distinct parts originating from different emission mechanisms: (i) the spectrum in the range 350–520 nm, consisting of characteristic double peaks at 410 and 440 nm with PL intensities decreasing after vacuum annealing, probably due to vacancy defects in Si nanocrystals; and (ii) the spectrum in the range 520–700 nm, consisting of a characteristic peak at 550 nm with a PL intensity not affected by vacuum annealing, probably due to Ge-related interfacial defects. No size dependence of PL peak energy expected from quantum confinement effects was observed in the wavelength range investigated. However, with an increase of crystal size, the PL peak intensity in the blue zone decreased. The PL intensity is found to be strongly affected by silicon concentration. A film heated in air has a different PL mechanism from the as-deposited and vacuum-annealed films. PACS 78.67.Bf; 81.05.Cy; 81.15.Cd     

磁控溅射制备ZnO薄膜的受激发射特性的研究

用射频磁控反应溅射法在二氧化硅衬底上制备ZnO薄膜。得到了在不同温度下ZnO薄膜的吸收与光致发光。观测到了纵光学波 (LO)声子吸收峰与自由激子吸收峰 ;室温 (30 0K)下 ,PL谱中仅有自由激子发光峰。这些结果证实了ZnO薄膜具有较高的质量。探讨了变温ZnO薄膜的发光特性。研究了ZnO薄膜的受激发射特性。     

Photoluminescence and electroluminescence studies of polyvinyl carbazole films

Polyvinyl carbazole (PVK) film has been prepared by solution method. Its absorption, photoluminescence (PL) and electroluminescence (EL) have been studied. For PL and absorption studies, film of PVK was prepared by spreading PVK solution on clean glass plate. The dried film was taken out of the glass plate and used for absorption, thickness measurement and PL studies. The film is transparent in the visible region and absorption starts at 340 nm wavelength. The absorption peaks are obtained at 280, 250 and 220 nm, indicating that optical gap of film is 3.65 eV and molecular orbitals exist at 4.43, 4.96 and 5.64 eV. PL studies reveal that excitation by violet light gives luminescence at 430, 480 and 690 nm. For EL studies, cell is prepared by depositing PVK film on a portion of conducting glass plate and taking aluminum foil as second electrode. It is observed from the characteristics that the current varies linearly, where as EL intensity varies non-linearly with increasing voltage. Higher brightness has been observed at higher frequencies. EL spectrum shows a sharp peak at 400 nm and a broad and less intense peak at 700 nm, which are attributed to radiative decay of singlet exciton and defect centers, respectively.     

稀土Tb3+掺杂纳米ZnO的发光性质

ZnO是一种优良的直接宽带隙半导体发光材料(Eg=3.4 eV),具有优异的晶格、光学和电学性质,稀土离子掺杂浓度和热处理温度对ZnO∶Re3 纳米晶发光强度、峰位变化等光学性质具有重要影响.利用溶胶-凝胶法(Sol-Gel),在不同退火温度下,制备了不同浓度的ZnO∶Tb3 纳米晶.室温下,测量了样品的X射线衍射谱(XRD)、光致发光谱(PL)和激发谱(PLE).观察到纳米ZnO基质在520 nm附近宽的绿光可见发射和稀土Tb3 在485,544,584和620 nm附近的特征发射.通过ZnO基质可见发射强度和稀土Tb3 特征发射强度随Tb3 掺杂浓度、退火温度的变化关系,获得了5D4→7F5跃迁的绿色主发射峰最强的样品制备工艺参数,其退火温度为600℃、掺杂浓度为4 at%;给出了稀土Tb3 的激发态5D4→7F6(485 nm),5D4→7F5(544 nm)和5D4→7F4(584 nm)的发射机制;证实了稀土Tb3 与纳米ZnO基质之间存在双向能量传递.     

Strong violet luminescence from ZnO nanocrystals grown by the low-temperature chemical solution deposition

The luminescence properties of zinc oxide (ZnO) nanocrystals grown from solution are reported. The ZnO nanocrystals were characterized by scanning electron microscopy, X-ray diffraction, cathodo- and photoluminescence (PL) spectroscopy. The ZnO nanocrystals have the same regular cone form with the average sizes of 100-500 nm. Apart from the near-band-edge emission around 381 nm and a weak yellow-orange band around 560-580 nm at 300 K, the PL spectra of the as-prepared ZnO nanocrystals under high-power laser excitation also showed a strong defect-induced violet emission peak in the range of 400 nm. The violet band intensity exhibits superlinear excitation power dependence while the UV emission intensity is saturated at high excitation laser power. With temperature raising the violet peak redshifts and its intensity increases displaying unconventional negative thermal quenching behavior, whereas intensity of the UV and yellow-orange bands decreases. The origin of the observed emission bands is discussed.     

Photoluminescence from ZnO-SiO2 opals with different sphere diameters and thicknesses

We systematically investigated the photoluminescence (PL) and transmittance characteristics of ZnO-SiO₂ opals with varied positions of the stop-band and film thicknesses. An improved ultraviolet (UV) luminescence was observed from ZnO-SiO₂ composites over pure ZnO nanocrystals under 325 nm He-Cd laser excitation at room temperature. The UV PL of ZnO nanocrystals in SiO₂ opals with stop-bands center of 410 nm is sensitive to the thickness of opal films, and the UV PL intensity increases with the film thickness increasing. The PL spectra of ZnO nanocrystals in SiO₂ opals with stop-bands center of 570 nm show a suppression of the weak visible band. The experimental results are discussed based on the scattering and/or absorbance in opal crystals.