STUDY ON THE CATHODE DEPOSIT PRODUCED IN THE PROCESS OF CARBON ARC DISCHARGE

The cathode deposit produced by carbon are discharge wae studied by scanning electron microscopy, high resolution electroa microscopy, X-ray diffraction and Raman spectroscopy. The results indicate that the stacking of hexagonal carbon layer in the discharged graphite is different from the ABAB stacking sequence in graphite, and that carboy nanotube is a kind of graphite-like micro-crystal with a low-dimensional structure.     

THE ANNEALING FEATURES OF Ta/Si MULTILAYER FILMS

The Ta/Si multilayers on (100) Si substrate have been studied over the annealing temper-ature range from 500 to 900℃ by X-ray diffraction and cross-section transmission electron microscopy. The periodicity of the multilayers becomes worse with increasing annealing tem-perature and disappears at 750℃. At 600℃, two kinds of modulation wavelength coexist because the size of several TaSi₂ grains is larger than the contracted original modulation wavelength. The films are contracted after annealing. The largest contraction, at least 40nm decreasing in thickness, occurs at 600℃. When the annealing temperature is lower than 600℃, h-TaSi₂ grains grow randomly and the growth is not affected by the substrate. At temperatures higher than 750℃, h-TaSi₂ grows preferentially in [001] direction parallel to [100] axis of Si substrate. The appearance of texture depends on whether the atomic diffusion is short range or long range at the corresponding annealing temperature.     

非掺杂ZnO薄膜中紫外与绿色发光中心

用直流反应溅射方法在硅衬底上淀积了ZnO薄膜,测量它们的光致发光(PL)光谱,观察到两个发光峰,峰值能量分别为3.18(紫外峰,UV)和2.38eV(绿峰).样品用不同温度分别在氧气、氮气和空气中热处理后,测量了PL光谱中绿峰和紫外峰强度随热处理温度和气氛的变化,同时比较了用FP-LMT方法计算的ZnO中几种本征缺陷的能级位置.根据实验和能级计算的结果,推测出ZnO薄膜中的紫外峰与ZnO带边激子跃迁有关,而绿色发光主要来源于导带底到氧错位缺陷(O_Zn)能级的跃迁,而不是通常认为的氧空 关键词： ZnO薄膜 热处理 光致发光光谱 缺陷能级     

EFFECT OF OXYGEN CONTENT ON STABILITY AND RESISTIVITY OF NdCaCuO SYSTEM

对样品Ｎｄ２－ｘＣａｘＣｕＯ４＋δ进行了Ｘ－射线衍射、热重分析、原位电导和氧含量的测定和分析，发现样品的电导对氧含量的变化非常敏感，随着氧含量的减少，电阻率大大下降，并且电阻率在低温表现的半导体行为减弱．Ｃａ掺杂不明显的改变体系的载流子浓度，但使样品Ｎｄ２－ｘＣａｘＣｕＯ４＋δ更容易失氧．真空中退火的样品在空气中不稳定且易潮解．     

Ca掺杂Nd1.85Ce0.15CuO4-δ体系的输运性质研究

为了研究Nd_1.85Ce_0.15CuO_4-δ体系中载流子的电荷性质，分别在Nd_1.85Ce_0.15CuO_4-δ中用Ca^2＋取代Nd^3＋制备了Nd_1.85-xCe_0.15Ca_xCuO_4-δ样品，在Nd₂CuO_{4-δ< 关键词：}     

MOCVD方法生长的氧化锌薄膜及其发光特性

近年来,随着近紫外光发射氧化锌薄膜研究的进展,许多先进的薄膜生长手段被广泛采用。本文探索了用MOCVD方法在硅衬底上生长氧化锌薄膜的方法,试验了用几种不同的有机金属源生长ZnO薄膜;研究了源材料及生长压力和温度对薄膜生长的影响;观察了样品的室温光致发光光 谱。通过与溅射方法生长的ZnO薄膜的比较,提出了影响材料结构和发光特性的可能原因。     

溅射方法生长的氧化锌薄膜的阴极射线和光致发光特性

近紫外光发射氧化锌薄膜是一种新兴的发光材料,它的发光波长比氮化镓的蓝光波长更短,在光存储应用中可以进一步提高光存储的密度,因而在光电子领域具有重要应用价值而备受关注。在此介绍我们用直流反应溅射方法在硅衬底上生长的氧化锌薄膜,观察了它们的阴极射线发光和光致发光光谱,研究了发光与薄膜晶体结构,以及发光与激发电子束流的关系等。并从中推测出ZnO薄膜中的发光中心。