基于LBM方法的风力发电机尾流结构仿真

针对传统CFD数值计算方法难以实现风力机动态旋转及其旋转状态下的流固耦合计算,本文结合格子玻尔兹曼(LBM)方法易于处理动态复杂边界的特点及大涡模拟(LES)方法在非稳态涡流结构捕捉上的优势,采用LBM-LES联合方法进行三维风力发电机整机气动性能及尾流结构仿真研究,同时采用尺度自适应方法对尾涡结构进行跟踪和精细化计算。针对NREL PhaseⅥ型试验机进行模拟,得到了与实验结果吻合的流动形态及尾流结构演变规律,分析了尾流区速度演变规律并对比了不同亚格子湍流模型对计算结果的影响.     

The effects of substrate temperature on ZnO-based resistive random access memory devices

Ag/ZnO/Zn/Pt structure resistive switching devices are prepared by radio frequency magnetron sputtering.The ZnO thin films are grown at room temperature and 400 C substrate temperature,respectively.By comparing the data,we find that the latter device displayed better stability in the repetitive switching cycle test,and the resistance ratio between a high resistance state and a low resistance state is correspondingly increased.After 104-s storage time measurement,this device exhibits a good retention property.Moreover,the operation voltages are very low:-0.3 V/-0.7 V(OFF state) and 0.3 V(ON state).A high-voltage forming process in the initial state is not required,and a multistep reset process is demonstrated.     

Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices

Ag/ZnO/Pt structure resistive switching devices are fabricated by radio frequency (RF) magnetron sputtering at room temperature. The memory devices exhibit stable and reversible resistive switching behavior. The ratio of high resistance state to low resistance state can reach as high as 10 2 . The retention measurement indicates that the memory property of these devices can be maintained for a long time (over 10 4 s under 0.1-V durable stress). Moreover, the operation voltages are very low, -0.4 V (OFF state) and 0.8 V (ON state). A high-voltage forming process is not required in the initial state, and multi-step reset process is demonstrated. Resistive switching device with the Ag/ZnO/ITO structure is constructed for comparison with the Ag/ZnO/Pt device.     

Evolution of the structural and optical properties of silver oxide films with different stoichiometries deposited by direct-current magnetron reactive sputtering

Nitrogen doping of silver oxide(AgxO) film is necessary for its application in transparent conductive film and diodes because intrinsic AgxO film is a p-type semiconductor with poor conductivity.In this work,a series of AgxO films is deposited on glass substrates by direct-current magnetron reactive sputtering at different flow ratios(FRs) of nitrogen to O2.Evolutions of the structure,the reflectivity,and the transmissivity of the film are studied by X-ray diffractometry and sphectrophotometry,respectively.The specular transmissivity and the specular reflectivity of the film decreasing with FR increasing can be attributed to the evolution of the phase structure of the film.The nitrogen does not play the role of an acceptor dopant in the film deposition.     

ZnGa2O4长余辉发光特性的研究

以ZnO和Ga2O3为原料,采用高温固相法,在不同温度和原料配比下合成了ZnGa2O4。用254 nm的紫外灯照射样品后,发现存在余辉发光,有505和690 nm两个余辉峰,且余辉峰相对强度受原料配比和烧结温度等制备条件的影响。ZnO不足和温度较高时505 nm峰相对强度较高,ZnO过量和温度较低时690nm峰相对强度较高。讨论了余辉峰的来源,认为505 nm峰来源于结构中Ga^3＋替代了部分Zn^2＋后相对变形八面体中Ga^3＋的^2EA→^4A2能级间跃迁;而690 nm峰起源于晶格中出现氧空位V0^＊后变形八面体中氧空位向其周围的O^2-的V0^＊→O^2-跃迁。解释了余辉峰相对强度受制备条件影响的原因：温度较高时ZnO较多挥发导致不足,而ZnO不足会使结构中出现Zn^2＋空位,从而多余的的Ga^3＋出现在这些空位上,其^2EA到^4A2能级间跃迁使505 nm发射占优;而温度较低时ZnO挥发较少,由于ZnO相对Ga2O3氧不足,可形成更多的O空位,有利于690 nm发射占优,这与余辉峰来源的讨论相符合。     

MBE生长ZnO薄膜的结构和光学特性的研究

用等离子体源辅助分子束外延(P-MBE)方法在蓝宝石(0001)面上生长出了高质量的ZnO薄膜,并对其结构和发光特性进行了研究。在XRD中只观察到ZnO薄膜的(0002)衍射峰,其半高宽(FWHM)值为0.18°;而在共振Raman散射光谱中观测到1LO(579 cm-1 )和2LO(1 152 cm-1 )两个峰位,这些结果表明ZnO薄膜具有单一c轴取向和高质量的纤维锌矿晶体结构。在吸收光谱中观测到自由激子吸收和激子-LO声子吸收峰,这表明在ZnO薄膜中激子稳定的存在于室温,并且两峰之间能量间隔为71.2 meV,与文献上报道的ZnO纵向光学声子能量(71 meV)相符。室温下在光致发光光谱(PL)中仅观测到位于376 nm处的自由激子发光峰,而没有观测到与缺陷相关的深能级发射峰,表明ZnO薄膜具有较高的质量和低的缺陷密度。