ZnSe—ZnS应变超晶格光学振动模的研究

本文给出了ＣａＡｓ衬底上生长的ＺｎＳｅ－ＺｎＳ应变超晶格的室温Ｒａｍａｎ分析，观测了该超晶格中ＺｎＳｅ子层和ＺｎＳ子层的纵光学振动模（ＬＯ），首次发现在一些样品中ＺｎＳｅ子层的纵光学声子模ＬＯＺｎＳ出现蓝移，而ＺｎＳ子层的ＬＯＺｎＳ总是向低波数方向移动，并利用限制效应和应变效应给出了解释。     

ZnSe－ZnS应变超晶格光学振动模的研究

本文给出了ＣａＡｓ衬底上生长的ＺｎＳｅ－ＺｎＳ应变超晶格的室温Ｒａｍａｎ分析，观测了该超晶格中ＺｎＳｅ子层和ＺｎＳ子层的纵光学振动模（ＬＯ），首次发现在一些样品中ＺｎＳｅ子层的纵光学声子模ＬＯＺｎＳ出现红移，另一些样品中ＬＯＺｎＳｅ出现蓝移，而ＺｎＳ子层的ＬＯＺｎＳ总是向低波数方向移动，并利用限制效应和应变效应给出了解释。     

CdS／SiO_2半导体玻璃复合材料的低频Raman散射光谱研究

ＣｄＳ／ＳｉＯ＿２半导体玻璃复合材料的低频Ｒａｍａｎ散射光谱研究王凯旋，隗罡，黄建滨，戴庆红，赵壁英，桂琳琳，谢有畅，唐有祺（北京大学物理化学研究所北京１００８７１）ＡＳｔｕｄｙｏｆＣｄＳＳｅｍｉｅｏｎｄｕｃｔｏｒｉｎＳｉｌｉｃａＧｌａｓｓｅｓｂｙＬ...     

显微拉曼中激光的注入和剔除

显微拉曼中激光的注入和剔除ＤａＳｉｌｖａＥｄｏｕａｒｄ，ＯｓｗａｌｔＪｏｅｌＬａｓｅｒＬｉｇｈｔＩｎｊｅｃｔｉｏｎＡｎｄＲｅｊｅｃｔｉｏｎＩｎＭｉｃｒｏ┐ＲａｍａｎＤａｓｉｌｖａＥｄｏｕａｒｄ，ＯｓｗａｌｔＪｏｅｌ＊（ＩｎｓｔｒｕｍｅｎｔｓＳ．Ａ．Ｄ...     

铁掺杂的纳米SnO_2的拉曼散射

铁掺杂的纳米ＳｎＯ２的拉曼散射吴若（江西师范大学物理系南昌３３００２７）左健（中国技术大学结构分析开放实验室合肥２３００２６）ＲａｍａｎＳｃａｔｅｒｉｎｇｏｆＦｅ┐ｄｏｐｅｄＮａｎｏｓｃａｌｅＳｎＯ２ＷｕＲｕｏ（ＤｅｐａｒｔｍｅｎｔｏｆＰｈｙｓｉｃｓ...     

共轭双键结构不同的三种有机染料分子的拉曼光谱研究

共轭双键结构不同的三种有机染料分子的拉曼光谱研究姚文华（复旦大学分析测试中心上海２００４３３）马世红，刘丽英，王文澄（三束材料改性国家重点实验室，复旦大学物理系上海２００４３３）ＲａｍａｎＳｐｅｃｔｒｏｓｃｏｐｙｓｔｕｄｉｅｓｏｆＴｈｒｅｅＯｒｇａｎ...     

超晶格Fano共振的Raman散射研究

超晶格Ｆａｎｏ共振的Ｒａｍａｎ散射研究赵铁男，朱恪，陈正豪，金奎绢，潘少华（中国科学院物理研究所北京１０００８０）林筠（中国地质大学北京１０００８１）ＲａｍａｎＳｐｅｃｔｒｏｓｃｏｐｉｃＳｔｕｍｅｓｏｎＦａｎｏｒｅｓｏｎａｎｃｅｏｆＳｕｐｅｒＡｔｔｉ...     

纳米三氧化二铬的拉曼散射

纳米三氧化二铬的拉曼散射左健冯建平许存义（中国科学技术大学结构分析开放实验室安徽合肥２３００２６）吴若（江西师范大学物理系江西南昌３３００２７）ＲａｍａｎＳｃａｔｅｒｉｎｇｏｆＮａｎｏｓｃａｌｅＣｈｒｏｍｉｃＯｘｉｄｅｓＺｕｏＪｉａｎ，ＦｅｎｇＪｉａ...     

有机化学气相沉积的钛酸铅铁电薄膜的拉曼光谱研究

有机化学气相沉积的钛酸铅铁电薄膜的拉曼光谱研究马文辉，张明生，孙力，尹真，陈强，陈延峰，闵乃本（南京大学固体微结构物理国家重点实验室南京２１００９３）ＲａｍａｎｓｐｅｃｔｒｏｓｃｏｐｉＳｓｔｕｄｙｏｆＰｂＴｉＯ＿３ＴｈｉｎＦｉｌｍｓｂｙＭｅｔａｌｏｒ...     

(002)取向AIN薄膜的Raman光谱

（００２）取向ＡＩＮ薄膜的Ｒａｍａｎ光谱赵永年王波何志罗微邹广田（吉林大学超硬材料国家重点实验室长春１３００２３）ＲａｍａｎＳｐｅｃｔｒａｏｆＡＩＮＦｉｌｍｓＯｒｉｅｎｔｅｄｉｎ（００２）ＺｈａｏＹｏｎｇｎｉａｎ，ＷａｎｇＢｏ，ＨｅＺｈｉ，ＬｕｏＷｅ...     

厚度对未掺杂ZnO薄膜光谱性能的影响

X射线衍射光谱、拉曼光谱和紫外可见透射光谱技术是薄膜材料检测的重要技术手段。通过对薄膜材料光谱性能的分析,可以获得薄膜材料的物相、晶体结构和透光性能等信息。为了解厚度对未掺杂ZnO薄膜的X射线衍射光谱、拉曼光谱和紫外可见透射光谱性能的影响,利用溶胶-凝胶法在石英衬底上旋涂制备了不同厚度的未掺杂ZnO薄膜样品,并对薄膜样品进行了X射线衍射光谱、拉曼光谱和紫外可见透射光谱的检测。首先,通过X射线衍射光谱检测发现,薄膜样品呈现出（002）晶面的衍射峰,ZnO薄膜为六角纤锌矿结构,均沿着C轴择优取向生长,且随着薄膜厚度的增加,衍射峰明显增强,ZnO薄膜的晶粒尺寸随着膜厚的增加而长大。利用扫描电子显微镜对薄膜样品的表面形貌分析显示,薄膜表面致密均匀,具有纳米晶体的结构,其晶粒具有明显的六角形状。通过拉曼光谱检测发现,薄膜样品均出现了437 cm-1的拉曼峰,这是ZnO纤锌矿结构的特征峰,且随着薄膜厚度的增加,其特征拉曼峰强度也增加,进一步说明了随着ZnO薄膜厚度的增加,ZnO薄膜晶化得到了加强。最后,通过紫外可见透射光谱测试发现,随着膜厚的增加,薄膜的吸收边发生一定红移,薄膜样品在可见光区域内的透过率随着膜厚度增加而略有降低,但平均透过率都超过90%。通过对薄膜样品的紫外-可见透射光谱进一步分析,估算了薄膜样品的折射率,定量计算了薄膜样品的光学禁带宽度,计算结果表明：厚度的改变对薄膜样品的折射率影响不大,但其禁带宽度随着薄膜厚度的增加而变窄,且均大于未掺杂ZnO禁带宽度的理论值3.37 eV。进一步分析表明,ZnO薄膜厚度的变化与ZnO晶粒尺寸的变化呈正相关,本质上,吸收边或光学禁带宽度的变化是由于ZnO晶粒尺寸变化引起的。     

Low frequency Raman scattering from acoustic phonons confined in ZnO nanoparticles

We report here the first observation of the low frequency Raman scattering from acoustic phonons in semiconducting zinc oxide (ZnO) nanoparticles without embedding in any solid matrix. ZnO nanoparticles (size 5-10 nm) with nearly spherical shape have been synthesized using a chemical route. A shift in the phonon peaks toward higher frequencies along with broadening was observed with a decrease in particle size. The size dependence of the acoustic phonons in ZnO nanoparticles is explained using Lamb's theory that predicts the vibrational frequencies of a homogeneous elastic body of spherical shape. Our results show that the observed low frequency Raman scattering originates from the spherical (l = 0) and quadrupolar vibrations (l = 2) of the spheroidal mode due to the confinement of acoustic vibrations in ZnO nanoparticles.     

Randomly-grown high-dielectric-constant ZnO nanorods for?near-field enhanced Raman scattering

We investigate the dependence of the size parameter in the Mie scattering theory on the near-field enhanced Raman scattering properties for high dielectric constant ZnO nanorods grown randomly by PLD (pulsed laser deposition). High Raman signals of Rhodamine 6G (R6G) at 532 nm excitation wavelength were observed with nanorods of 400 nm average diameter. This experimental result was explained theoretically by the size parameter described in the Mie scattering theory, not by surface plasmon polaritons. This was also confirmed by the near-field distribution calculated by the FDTD (Finite-Difference Time Domain) method. The ZnO nanorods with 400 nm average diameter can detect as low as 1 μM of R6G. This near-field enhancement factor is equivalent to that with 10-nm-thick gold-coated ZnO nanorods (nanoshells) with an average core diameter of 100 nm. Controlling the diameter of bare ZnO nanorods is effective for obtaining large enhancement factors without an additional process of gold thin film coating on them.     

ZnO/Zn界面对纳米ZnO薄膜光学性质的影响

采用氧等离子体辅助电子束蒸发金属Zn后低温退火的方法制备纳米ZnO薄膜。利用X射线衍射(XRD)谱、拉曼(Raman)谱、X射线光电子能谱(XPS)以及光致发光(PL)谱等手段,分析了退火温度及ZnO/Zn界面对样品的结构和发光性质的影响。Raman结果表明随着退火温度的升高,界面模式(Es)振动减弱并向低波数方向移动。当退火温度为400℃时,界面振动消失,Zn全部转化成具有六方纤锌矿结构的ZnO,得到化学配比的纳米ZnO薄膜。PL谱表明,经400℃退火处理的样品紫外发射最强,发光性质最好。     

掺铟氧化锌纳米阵列的制备、结构及性质研究

通过碳热辅助化学气相沉积法,用Au做催化剂在850℃下制备了铟掺杂的氧化锌（In/ZnO）纳米阵列.纳米棒的尺寸均匀,表面光滑,直径约为400 nm,长为2—3 μm.能量色散谱和X射线光电子能谱分析表明, 六棱柱状的纳米阵列中成功地进行了In 的掺杂,含量约为08%.室温光致发光谱显示掺杂后的紫外发射峰位有红移,峰的半高宽变大, 没有观察到绿光发射峰位.拉曼光谱显示出ZnO的峰位有不同程度的偏移,并且有新的峰位出现,这表明In的掺杂有效地取代了部分Zn的晶格. 关键词： In掺杂 ZnO 纳米阵列 光致发光     

Synthesis of ZnO hollow spherical structures with different surface-to-volume ratios

ZnO hollow spherical structures with different surface-to-volume ratios were prepared using solid Zn microspheres as template via a simple oxygen-controlled thermal evaporation approach. The results of scanning electron microscopy testify that ZnO hollow spherical structures with different morphologies can be realized by changing oxygen supply. The corresponding transmission electron microscopy images further reveal that the prepared spherical structures are hollow, and nanorods epitaxially grow from the surface of the sphere shell along the [0001] direction. A series of experiments indicates that the formation of hollow spherical structures involves the oxidization on the surface of Zn microspheres, sublimation of Zn, and growth of ZnO nanorods.     

ZnO单晶的微区光致发光特性研究

ZnO单晶材料以其优良的综合性能在光电子器件方面掀起了研究热潮,因此对ZnO单晶的研究具有重要的理论和实践意义。采用激光辐照的方式,对ZnO单晶进行了光致发光(photoluminescence, PL)光谱实验,分析研究了ZnO单晶在不同温度(低温)和不同激光能量强度照射下其光致发光特性。研究结果表明,ZnO单晶内存在少量杂质及表面氧缺陷,这些结构对其发光特性有一定的影响;在低温条件下,ZnO单晶具有良好的发光特性,且随着温度的提高,发光光谱峰的位置会向长波长方向移动,但强度会减小;当激光光源的强度增大,ZnO单晶的PL发射光谱的强度也会随之增大,且峰的位置和相对强度不变。结合拉曼(Raman)光谱实验,从分子及原子振动、转动类型验证了纤锌矿ZnO单晶的六方晶系结构;配合X射线衍射(X-ray diffraction, XRD)技术,得出ZnO单晶良好的结晶特性以及晶轴取向。     

Effects of hydrogen flow on properties of hydrogen doped ZnO thin films prepared by RF magnetron sputtering

The hydrogen doped ZnO (ZnO:H) thin films were deposited on quartz glass substrates by radio frequency magnetron sputtering. The doping characteristics of ZnO:H thin films with varied hydrogen flow ratio were investigated. At low hydrogen flow ratio (H₂/(H₂+Ar)≤0.02), the ZnO:H thin films exhibited dominant (002) peaks from X-ray diffraction and the lattice constants became smaller. The particles were mainly a columnar structure. The particles’ size became smaller, and the island-like structure appeared on the thin films surface. In addition, the low resistivity properties of ZnO:H thin films was ascribed to the increase of the carriers concentration and carriers mobility; When the hydrogen flow ratio was more than 0.02 (M≥0.02), two absorption bands at 1400–1800 cm^?1 and 3200–3900 cm^?1 were observed from the FT-IR spectra, which indicated that the ZnO:H thin films had typical Zn–H bonding, O–H bonding (hydroxyl), and Zn–H–O bonding (like-hydroxyl). The scanning electron microscope (SEM) results show that a large number of hydroxyl agglomeration formed an island-like structure on the thin films surface. The absorption peak at about 575 cm^?1 in the Raman spectra indicated that oxygen vacancies (V_O) defects were produced in the process of high hydrogen doping. In this condition, the low resistivity properties of ZnO:H thin films were mainly due to the increasing electron concentration resulted from V_O. Meanwhile, the Raman absorption peaks at approximately 98 cm^?1 and 436 cm^?1 became weaker, and the (002) XRD diffraction peak quenched and the lattice constants increased, which shows that the ZnO:H thin films no longer presented a typical ZnO hexagonal wurtzite structure. With the increasing of hydrogen flow ratio, the optical transmittance of ZnO:H thin films in the ultraviolet band show a clear Burstein–Moss shift effect, which further explained that electron concentration was increased due to the increasing V_O with high hydrogen doping concentration. Moreover, the optical reflectance of the thin films decreased, indicating the higher roughness of the films surface. It was noteworthy that etching effect of H plasma was obvious in the process of heavy hydrogen doping.     

Modeling emissivity of low-emissivity coating containing horizontally oriented metallic flake particles

The scattering and absorption cross sections of horizontally oriented metallic flake particles are estimated by extended geometric optics that includes diffraction and edge effects. Emissivity of the coating containing those particles is calculated using Kubelka–Munk theory. The dependence of emissivity of the coating on the radius, thickness, content of metallic flake particles and coating thickness is discussed. Finally, theoretical results are compared with the experimental measurements with Al/acrylic resin coating system and the results show that simulation values are in good agreement with experimental ones.     

Electrical properties and Raman scattering investigation of Ag doped ZnO thin films

Ag-doped ZnO thin films were deposited on quartz glass substrates by a radio-frequency (RF) magnetron sputtering technique at room temperature (RT). The influence of Ag doping content on the electrical and Raman scattering properties of ZnO films were systematically investigated by Hall measurement system and Raman scattering spectrum. Two additional local vibrational modes (LVMs) at 230.0 and 394.5 cm^?1 induced by Ag dopant in ZnO:Ag films were observed by Raman analyses at RT, corresponding to Ag atoms located at O sites (LV M_Zn?Ag) and Zn sites (LV M_Ag?O) in ZnO lattice. Moreover, we further studied the effect of donor Ag_O and acceptor Ag_Zn defects on the electrical properties of ZnO:Ag films. The results indicate that O-rich condition is preferred to suppress the formation of Ag_O defects and enhance Ag_Zn defects. The p-type ZnO:Ag film was achieved by properly optimizing the annealing conditions under O-rich condition.