| ZnO/Zn界面对纳米ZnO薄膜光学性质的影响 |
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| 引用本文： | 路丽霞,季辉,汤庆鑫,童艳红,刘益春.ZnO/Zn界面对纳米ZnO薄膜光学性质的影响[J].发光学报,2006,27(2):229-233. |
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| 作者姓名： | 路丽霞 季辉 汤庆鑫 童艳红 刘益春 |
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| 作者单位： | 1. 河北工业大学, 理学院普物教研室, 天津, 300130;2. 中国石油, 华北石化公司, 河北, 任丘, 062552;3. 中国科学院化学研究所, 有机固体重点实验室, 北京, 100080;4. 中国科学院, 激发态物理重点实验室, 吉林, 长春, 130033;5. 东北师范大学物理学院, 光电材料研究中心, 吉林, 长春, 130024 |
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| 基金项目： | 河北省高校重点学科建设项目 |
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| 摘 要： | 采用氧等离子体辅助电子束蒸发金属Zn后低温退火的方法制备纳米ZnO薄膜。利用X射线衍射(XRD)谱、拉曼(Raman)谱、X射线光电子能谱(XPS)以及光致发光(PL)谱等手段,分析了退火温度及ZnO/Zn界面对样品的结构和发光性质的影响。Raman结果表明随着退火温度的升高,界面模式(Es)振动减弱并向低波数方向移动。当退火温度为400℃时,界面振动消失,Zn全部转化成具有六方纤锌矿结构的ZnO,得到化学配比的纳米ZnO薄膜。PL谱表明,经400℃退火处理的样品紫外发射最强,发光性质最好。
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| 关 键 词： | 等离子体辅助电子束蒸发 纳米ZnO薄膜 ZnO/Zn界面 光致发光 |
| 文章编号： | 1000-7032（2006）02-0229-05 |
| 收稿时间： | 2005-04-04 |
| 修稿时间： | 2005-09-12 |
Effect of the ZnO/Zn Interface Layers on the Luminescent Properties of Nano-ZnO Films |
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| LU Li-xia,JI Hui,TANG Qing-xin,TONG Yan-hong,LIU Yi-chun.Effect of the ZnO/Zn Interface Layers on the Luminescent Properties of Nano-ZnO Films[J].Chinese Journal of Luminescence,2006,27(2):229-233. |
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| Authors: | LU Li-xia JI Hui TANG Qing-xin TONG Yan-hong LIU Yi-chun |
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| Institution: | 1. School of Science, Hebei University of Technology, Tianjin 300130, China;2. Huabei Petrochemical Corporation, PetroChina, Renqiu 062552, China;3. Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing 100080, China;4. Key Laboratory of Excited State Processes, Chinese Academy of Sciences, Chang chun 130033, China;5. College of Physics, Center for Advanced Op toelectronic Functional Material Research, Northeast Normal University, Chang chun 130024, China |
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| Abstract: | A simple and economical method to obtain nano-ZnO films by oxygen-plasma-assisted E-beam eva-poration of metallic Zn onto a Si substrate at 250℃,followed by low-temperature thermal annealing from 300℃ to 500℃ for 1 h in oxygen ambient was described in this paper.The effect of the interface layers between Zn and ZnO on the structural and luminescent properties of the samples was studied employing X-ray diffraction(XRD),Raman scattering and room-temperature photoluminescence(PL) spectra.XRD patterns indicated that the nano-ZnO films had a polycrystalline hexagonal wurtzite structure.The interface mode(Es) centered at about 534 cm-1,which is from the surface of Zn particles coated with ZnO nano-particles.With increasing the annealing temperature,the Es shifted to lower wavenumber with a decrease of intensity.When annealing at 400℃ for 1 h,the Es disappeared,indicating Zn was fully transformed to ZnO.The result of XPS showed the stoichiometric nano-ZnO film was obtained when the sample was annealed at 400℃.Room-temperature PL spectra showed a very strong ultraviolet emission peak at about 381 nm.With increasing the annealing temperature,the intensity of the interface mode decreased.So the bound exciton(from the interface mode) emission decreased and the free exciton emission increased.The film annealed at 400℃ for 1 h had the maximum value of the ratio of UV band to visible emission.All these indicated that stoichiometric,high quality nano-ZnO film was obtained when the sample was annealed at 400℃. |
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| Keywords: | plasma assisted E-beam evaporation nano-ZnO film ZnO/Zn interface photoluminescence |
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