掺铟氧化锌纳米阵列的制备、结构及性质研究

通过碳热辅助化学气相沉积法，用Au做催化剂在850℃下制备了铟掺杂的氧化锌（In/ZnO）纳米阵列.纳米棒的尺寸均匀，表面光滑，直径约为400 nm，长为2—3 μm.能量色散谱和X射线光电子能谱分析表明, 六棱柱状的纳米阵列中成功地进行了In 的掺杂，含量约为08%.室温光致发光谱显示掺杂后的紫外发射峰位有红移,峰的半高宽变大, 没有观察到绿光发射峰位.拉曼光谱显示出ZnO的峰位有不同程度的偏移，并且有新的峰位出现，这表明In的掺杂有效地取代了部分Zn的晶格. 关键词： In掺杂 ZnO 纳米阵列 光致发光

Fabrication and characterization of In-doped zinc oxide nanoarrays

In-doped ZnO nanoarrays were successfully synthesized by the carbon thermal reduction deposition process, at 850℃ using Au catalyst. The length of legs of T-ZnO nanorods is 2—3 μm and the diameter is ～400 nm, dimensionally uniform and the surface smooth. Energy dispersive spectroscopy and X-ray photoelectron spectroscopy investigations show that the In content of nanorods reaches about 08%. Room temperature photoluminescence spectra of the nanoarrays shows that the ultraviolet emission peak red-shifts and becomes broader after doping. Raman scattering study shows that ZnO peaks have different shift, and a new peak appears, which proved a part of In atoms replacing Zn in the crystal lattice.