Analysis of each branch current of serial solar cells by using an equivalent circuit model

In this paper,based on the equivalent single diode circuit model of the solar cell,an equivalent circuit diagram for two serial solar cells is drawn.Its equations of current and voltage are derived from Kirchhoff’s current and voltage law.First,parameters are obtained from the I–V(current–voltage)curves for typical monocrystalline silicon solar cells(125 mm×125 mm).Then,by regarding photo-generated current,shunt resistance,serial resistance of the first solar cell,and resistance load as the variables.The properties of shunt currents(Ish1and Ish2),diode currents(ID1and ID2),and load current(IL)for the whole two serial solar cells are numerically analyzed in these four cases for the first time,and the corresponding physical explanations are made.We find that these parameters have different influences on the internal currents of solar cells.Our results will provide a reference for developing higher efficiency solar cell module and contribute to the better understanding of the reason of efficiency loss of solar cell module.     

SPICE modeling of memristors with multilevel resistance states

With CMOS technologies approaching the scaling ceiling, novel memory technologies have thrived in recent years, among which the memristor is a rather promising candidate for future resistive memory (RRAM). Memristor’s potential to store multiple bits of information as different resistance levels allows its application in multilevel cell (MCL) technology, which can significantly increase the memory capacity. However, most existing memristor models are built for binary or continuous memristance switching. In this paper, we propose the simulation program with integrated circuits emphasis (SPICE) modeling of charge-controlled and flux-controlled memristors with multilevel resistance states based on the memristance versus state map. In our model, the memristance switches abruptly between neighboring resistance states. The proposed model allows users to easily set the number of the resistance levels as parameters, and provides the predictability of resistance switching time if the input current/voltage waveform is given. The functionality of our models has been validated in HSPICE. The models can be used in multilevel RRAM modeling as well as in artificial neural network simulations.     

相对论返波管中的脉冲缩短现象

 脉冲缩短现象是高功率微波器件中普遍存在的物理现象，它将导致输出微波的能量低于预期值。用粒子模拟的方法研究了相对论返波管在填充氦气以及存在中性背景气体时的脉冲缩短现象。从计算结果可以看出，器件内残留的中性背景气体是产生脉冲缩短的原因之一，但并不是最重要的因素；对于充气的相对论返波管，为了展宽脉宽，充气气压必须控制在一个适当的水平。器件内部强电场的射频击穿和慢波系统表面的爆炸发射可能是引起脉冲缩短的更为重要的因素。     

Hybrid solar cell based on polythiophene and GaN nanoparticles composite

Hybrid solar cells based on poly(3-hexylthiophene)(P3HT)and Galium nitride(GaN)nanoparticle bulk heterojunction are fabricated and analyzed.The GaN nanocrystal is synthesized by means of a combination of sol–gel process with high temperature ammoniation using Ga(OC2H5)as a precursor.Their characteristics are determined by X-ray diffraction,X-ray photoelectron spectroscopy,and scanning electron microscopy.With the addition of GaN nanoparticle to P3HT,the device performance is greatly enhanced.     

Effects of optical interference and annealing on the performance of poly （3-hexylthiophene）： fullerene based solar cells

<正>In this paper,the effects of optical interference and annealing on the performance of P3HT:PCBM based organic solar cells are studied in detail.Due to the optical interference effect,short circuit current density(J_SC) shows obvious oscillatory behaviour with the variation of active layer thickness.With the help of the simulated results,the devices are optimized around the first two optical interference peaks.It is found that the optimized thicknesses are 80 and 208 nm.The study on the effect of annealing on the performance indicates that post-annealing is more favourable than pre-annealing.Based on post-annealing,different annealing temperatures are tested.The optimized annealing condition is 160℃for 10 min in a nitrogen atmosphere.The device shows that the open circuit voltage V-（OC） achieves about 0.65V and the power conversion efficiency is as high as 4.0%around the second interference peak.     

Effect of slow-solvent-vapour treatment on performance of polymer photovoltaic devices

In this work, enhanced poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) bulkheterojunction photovoltaic devices are achieved via slow-solvent-vapour treatment. The correlations between the morphology of the active layer and the photovoltaic performance of polymer-based solar cell are investigated. The active layers are characterized by atomic force microscopy and optical absorption. The results show that slow-solventvapour treatment can induce P3HT self-organization into an ordered structure, leading to the enhanced absorption and efficient charge transport.     

InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage

In this paper,InGaN/GaN multiple quantum well solar cells (MQWSCs) with an In content of 0.15 are fabricated and studied.The short-circuit density,fill factor and open-circuit voltage (V oc) of the device are 0.7 mA/cm 2,0.40 and 2.22 V,respectively.The results exhibit a significant enhancement of V oc compared with those of InGaN-based hetero and homojunction cells.This enhancement indicates that the InGaN/GaN MQWSC offers an effective way for increasing V oc of an In-rich In x Ga 1 x N solar cell.The device exhibits an external quantum efficiency (EQE) of 36% (7%) at 388 nm (430 nm).The photovoltaic performance of the device can be improved by optimizing the structure of the InGaN/GaN multiple quantum well.     

Effects of electron radiation on shielded space and triple-junction GaAs solar cells

The displacement damage dose methodology for analysing and modelling the performance of triple-junction InGaP₂/GaAs/Ge solar cells in an electron radiation environment is presented. Degradations at different electron energies are correlated with displacement damage dose (D_\rm d). One particular electron radiation environment, relative to a geosynchronous earth orbit (GEO), is chosen to calculate the total D_\rm d behind the different thicknesses coverglasses to predict the performance degradation at the end of the 15-year mission.     

The effects of InGaN layer thickness on the performance of InGaN/GaN p-i-n solar cells

InGaN/GaN p-i-n solar cells, each with an undoped In0.12Ga0.88N absorption layer, are grown on c-plane sapphire substrates by metal-organic chemical vapor deposition. The effects of the thickness and dislocation density of the absorp- tion layer on the collection efficiency of InGaN-based solar cells are analyzed, and the experimental results demonstrate that the thickness of the InGaN layer and the dislocation density significantly affect the performance. An optimized InGaN- based solar cell with a peak external quantum efficiency of 57% at a wavelength of 371 nm is reported. The full width at half maximum of the rocking curve of the （0002） InGaN layer is 180 arcsec.     

Evaluation and prediction of the degradation of space Si solar cells induced by a low-earth-orbit radiation environment

Space-graded silicon solar cells are evaluated by 1 MeV and 2 MeV electron-irradiation. The mean degradation of the maximum power (P_max) is presented and analyzed. The degradation at both electron energies has been correlated with the displacement damage dose (D_d). A good linearity between the electron D_d and the mean P_max degradation is obtained. The concept of D_d has also been used to predict the Si solar cell response in a low-earth-orbit (Altitude 799 km, Inclination 99^o) radiation environment, considering the shielded effect of a 120 μ m-thick silica coverglass on reducing the radiation. Compared with the on-orbit data from a Si solar array of a Chinese satellite (duration from April 2007 to July 2010), a good match can be found between the on-orbit data and the predicted results using D_d methodology, indicating the method is appropriate for evaluating the radiation damage of the solar cells, and also to provide a new technique for studying radiation effects on the optoelectronic detectors used in many high energy physics applications, where harsh radiation environments produce damage in optoelectronic device materials.     

Application of a characterized difference-frequency laser source to carbon monoxide trace detection

A tunable continuous wave(cw) mid-infrared(MIR) laser based on difference-frequency generation(DFG) in a 1.5-cm long AgGaS2 nonlinear crystal for trace gas detection is reported.Two visible and near-infrared diode lasers were used as pump and signal sources.The MIR-DFG laser was tunable in a wavelength range of 4.75 μm-4.88 μm.The phase-matching(PM) condition was non-critically achieved by adjusting the temperature of the crystal for fixed pairs of input pump and signal wavelengths.The required PM temperatures of the generated MIR-DFG wavelengths have been calculated by using three sets of recent Sellmeier equations and the temperature-dispersion equations of AgGaS2 given by Willer U,et al.(Willer U,Blanke T and Schade W 2001 Appl.Opt.40 5439).Then the calculated PM temperatures are compared with the experimental values.The performance of the MIR-DFG laser is shown by the trace detection of the P(16) carbon monoxide(12C16O) absorption line in a laboratory-fabricated absorption cell.The enhanced sensitivity of about 0.6×10 4 was obtained through the long path absorption provided by consecutive reflections between coated cylindrical mirrors of a constructed cell.     

Simulation of magnetization behaviours of Sm（Co,Fe,Cu,Zr）z magnet with low Cu content

The effects of microstructure, cell orientation and temperature on magnetic properties and the coercivity mechanism in Sm(Co,Fe,Cu,Zr)z with low Cu content are studied by using the micromagnetic finite element method in this paper. The simulations of the demagnetization behaviours indicate that the pinning effect weakens gradually with the thickness of cell boundary decreasing and strengthens gradually with the cell size decreasing. Because of the intergrain exchange coupling, the coercivity mechanism is determined by the difference in magnetocrystalline anisotropy between the cell phase and the cell boundary phase. And the coercivity mechanism is related to not only the cells alignment but also temperature. With temperature increasing, a transformation of the demagnetization mechanism occurs from the domain pinning to the uniform magnetization reversal mode and the transformation temperature is about 650~K.     

Solar cells based on the poly(N-vinylcarbazole):porphyrin: tris(8-hydroxyquinolinato) aluminium blend system

Organic solar cells based on poly(N-vinylcarbazole)(PVK):porphyrin:tris(8-hydroxyquinolinato) aluminium(Alq3) blend p-n junction systems have been fabricated in this work.The roles of the different components in the blend system and of the amount of porphyrin have been investigated.The 5,10,15,20-tetraphenylporphyrin(TPP) and 5,10,15,20-tetra(o-chloro)phenylporphyrinato-copper(CuTClPP) are used in the solar cells.The results show that TPP is better than CuTClPP in enhancing the performance of PVK:Alq3 solar cells.When the weight ratio of PVK:TPP:Alq3 is 1:1.5:1,the best performance of solar cell is obtained.The open circuit voltage(V oc) is 0.87 V,and the short circuit current(J sc) is 17.5 μA·cm 2.In the ternary bulk hereojunction system,the device may be regarded as a cascade of three devices of PVK:TPP,TPP:Alq3 and PVK:Alq3.PVK,TPP and Alq3 can improve the hole mobility,light absorption intensity and electron mobility of the ternary bulk hereojunction system,respectively.     

Enhancing The Efficiency of White Organic Light-emitting Diode Using Energy Recyclable Photovoltaic Cells

We demonstrate that power recycling is feasible by using a semi-transparent stripped Al electrode as interconnecting layer to merge a white organic light-emitting devices (WOLED) and an organic photovoltaic(OPV) cell. The device is called a PVOLED. It has a glass/ITO/CuPc/m-MTDATA∶V2O5/NPB/CBP∶FIrpic∶DCJTB/BPhen/LiF/Al/P3HT∶PCBM/V2O5/Al structure. The power recycling efficiency of 10.133% is achieved under the WOLED of PVOLED operated at 9 V and at a brightness of 2 110 cd/m2, when the conversion efficiency of OPV is 2.3%. We have found that the power recycling efficiency is decreased under high brightness and high applied voltage due to an increase input power of WOLED. High efficiency (18.3 cd/A) and high contrast ratio (9.3) were obtained at the device operated at 2 500 cd/m2 under an ambient illumination of 24 000 lx. Reasonable white light emission with Commission Internationale De L'Eclairage (CIE) color coordinates of (0.32,0.44) at 20 mA/cm2 and slight color shift occurred in spite of a high current density of 50 mA/cm2. The proposed PVOLED is highly promising for use in outdoors display applications.     

Low temperature laser absorption spectra of methane in the near-infrared at 1.65 μm for lower state energy determination

Direct absorption spectra of the 2ν 3 band of methane （CH₄） from 6038 to 6050 cm～（-1） were studied at different low temperatures using a newly developed cryogenic cell in combination with a distributed feedback （DFB） diode laser.The cryogenic cell can operate at any stabilized temperature ranging from room temperature down to 100 K with temperature fluctuation less than ±1 K within 1 hour.In the present work,the CH 4 spectra in the range of 6038-6050 cm～（-1） were recorded at 296,266,248,223,198,and 176 K.The lower state energy E and the rotational assignment of the angular momentum J were determined by a "2-low-temperature spectra method" using the spectra recorded at 198 and 176 K.The results were compared with the data from the GOSAT and the recently reported results from Campargue and co-workers using two spectra measured at room temperature and 81 K.We demonstrated that the use of a 2-low-temperature spectra method permits one to complete the E and J values missed in the previous studies.     

Soft X-Ray Holographic Microscopy of Biological Cells

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Lorentz detuning and tuning system study of 3+1/2cell DC-SC photo-injector for PKU-FEL

A 3+1/2cell DC-SC photo-injector for PKU-FEL facility is under development,which is an upgrade design of the successful 1+1/2cell DC-SC photo-injector. The Lorentz detuning and tuning structure for the 3+1/2cell superconducting cavity is presented in this paper. The Lorentz force detuning coefficient is 1.2Hz/(MV/m)² with double stiffening rings for the half cell and single stiffening rings between the adjacent TESLA cells. With the special stiffening structure, the 3+1/2cell whole cavity needs only one tuner. The influences of the tuning on frequency shift, field flatness and average gradient are discussed in this paper. The simulation results show that the stiffening rings' design is successful.     

Atomic magnetometer with microfabricated vapor cells based on coherent population trapping

An atomic magnetometer based on coherent population trapping(CPT) resonances in microfabricated vapor cells is demonstrated. Fabricated by the micro-electro-mechanical-system(MEMS) technology, the cells are filled with Rb and Ne at a controlled pressure. An experimental apparatus is built for characterizing properties of microfabricated vapor cells via the CPT effects. The typical CPT linewidth is measured to be about 3 k Hz(1.46 k Hz with approximately zero laser intensity) for the rubidium D1 line at about 90℃. The effects of pressure, temperature and laser intensity on CPT linewidth are studied experimentally. A closed-loop atomic magnetometer is finally finished with a sensitivity of 210.5 p T/Hz1/2 at 1 Hz bandwidth. This work paves the way for developing an integrated chip-scale atomic magnetometer in the future.     

Polymer solar cells based on a PEDOT:PSS layer spin-coated under the action of an electric field

In the process of fabrication of polymer photovoltaic(PV) devices,poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS) thin film,acting as an anode buffer layer,is spin-coated under the action of an electric field.The PV devices with a PEDOT:PSS layer spin-coated under the action of a static electric field exhibit improved short-circuit current density(J sc) and power conversion efficiency(PCE).The investigation of morphology shows that the appropriate intensity of the electric field can increase the roughness of the surface of the PEDOT:PSS layer,which results in improved contact between the anode and hole transport layer and thus enhances the J sc of the devices.Chemical analysis is also provided by x-ray photoelectron spectroscopy(XPS) spectra.