Effects of electron radiation on shielded space and triple-junction GaAs solar cells |
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Authors: | Gao Xin Yang Sheng-Sheng Xue Yu-Xiong Li Kai Li Dan-Ming Wang Yi Wang Yun-Fei and Feng Zhan-Zu |
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Institution: | National Key Laboratory of Vacuum & Cryogenics Technology and Physics, Lanzhou Institute of Physics, Chinese Academy of Space Technology, Lanzhou 730000, China |
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Abstract: | The displacement damage dose methodology for analysing and
modelling the performance of triple-junction InGaP2/GaAs/Ge
solar cells in an electron radiation environment is presented.
Degradations at different electron energies are correlated with
displacement damage dose (D_\rm d). One particular electron
radiation environment, relative to a geosynchronous earth orbit (GEO),
is chosen to calculate the total D_\rm d behind the different
thicknesses coverglasses to predict the performance degradation at
the end of the 15-year mission. |
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Keywords: | nonionizing energy loss displacement damage dose solar
cell |
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