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The experimental results of single event burnout induced by heavy ions and 252Cf fission fragments in power MOSFET devices have been investigated. It is concluded that the characteristics of single event burnout induced by 252Cf fission fragments is consistent to that in heavy ions. The power MOSFET in the "turn-off" state is more susceptible to single event burnout than it is in the "turn-on" state. The thresholds of the drain-source voltage for single event burnout induced by 173 MeV bromine ions and ^252Cf fission fragments are close to each other, and the burnout cross section is sensitive to variation of the drain-source voltage above the threshold of single event burnout. In addition, the current waveforms of single event burnouts induced by different sources are similar. Different power MOSFET devices may have different probabilities for the occurrence of single event burnout. 相似文献
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The displacement damage dose methodology for analysing and
modelling the performance of triple-junction InGaP2/GaAs/Ge
solar cells in an electron radiation environment is presented.
Degradations at different electron energies are correlated with
displacement damage dose (D_\rm d). One particular electron
radiation environment, relative to a geosynchronous earth orbit (GEO),
is chosen to calculate the total D_\rm d behind the different
thicknesses coverglasses to predict the performance degradation at
the end of the 15-year mission. 相似文献
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Heavy ions and pulsed lasers are important means to simulate the ionization damage effects on semiconductor materials. The analytic solution of high-energy heavy ion energy loss in silicon has been obtained using the Bethe-Bloch formula and the Kobetich-Katz theory, and some ionization damage parameters of Fe ions in silicon, such as the track structure and ionized charge density distribution, have been calculated and analyzed according to the theoretical calculation results. Using the Gaussian function and Beer's law, the parameters of the track structure and charge density distribution induced by a pulsed laser in silicon have also been calculated and compared with those of Fe ions in silicon, which provides a theoretical basis for ionization damage effect modeling. 相似文献
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