650 nm聚合物阵列波导光栅波分复用器设计

选择在可见光波段具有较低吸收损耗的聚甲基丙烯酸甲酯-甲基丙烯酸环氧丙酯 共聚物作为波导包层材料,使用双酚A型环氧树脂作为折射率调节剂,根据材料的折射率设计了单模波导截面尺寸;然后,采用束传播法优化设计出16信道阵列波导光栅(AWG)器件的版图结构。利用Optiwave软件模拟了AWG器件的光传输特性,结果显示,器件的信道间隔为0.845 01 nm,插入损耗小于14 dB,串扰小于-25 dB。     

低偏振相关损耗聚合物光波导

表征了新合成的热光聚合物bisphenol A-aldehyde resin (BPA-resin)的独特性质。并且利用光刻和反应离子刻蚀技术(RIE)制备成功BPA-resin 聚合物的单模条波导.实验结果表明,对于TE和TM偏振,该聚合物波导在1.31 μm和1.55 μm波长下分别有低达0.43 dB/cm和0.51 dB/cm的传播损耗.在上述波长下,波导的低偏振相关损耗 (PDL)小于0.1 dB/cm.因此,是制备可调热光器件的良好导波模快.     

聚合物阵列波导光栅的制作技术

研究了聚合物阵列波导光栅AWG制作的几个关键技术.首先,为了克服反应离子刻蚀过程中单独使用光刻胶作掩膜而导致的光波导形状和尺寸偏离设计的缺点,采用了光刻胶与金属掩膜相结合的双掩膜技术进行器件制作.详细介绍了双掩膜技术制备聚合物AWG的过程,并得出铝膜作为掩膜的最佳厚度为100nm左右.测试给出了使用和没有使用双掩膜的对比结果,该结果表明使用双掩膜技术制作的波导质量明显好于单独使用光刻胶作掩膜制作的结果.其次,采用蒸气回溶技术来减小反应离子刻蚀产生的波导表面和侧壁的起伏,从而降低了波导的散射损耗.结果表明,蒸气回溶技术使所制作的波导表面的均方根粗糙度从41.307nm降低到24.564nm.     

基于SU-8聚合物的越级衍射型单纤三向波分复用器

介绍了基于阵列波导光栅(AWG)的单纤三向波分复用器的设计、仿真、制作与测试。利用阵列波导光栅的频谱周期性,采用越级衍射方法可在无需改变AWG布局,无需额外元件的情况下覆盖三向波分复用器的整个工作波段(1310~1550nm)。器件的芯层采用较高折射率的SU-8聚合物,下包层是二氧化硅,并用空气作为覆盖层,制作流程简单,只需要紫外光刻,成本低。仿真结果显示三个工作通道3dB带宽都大于11nm,偏振波长漂移不超过0.65nm。器件测试结果验证了越级衍射设计的正确性,在TM偏振态下的第二和第三波长通道的额外损耗是3dB左右,第一波长通道的额外损耗是7dB左右,串扰在-15dB左右。整个器件大小仅1.3mm×0.402mm。     

一种基于斜光栅辅助的非对称耦合器型光分插复用器

提出了一种基于斜光栅辅助的非对称耦合器型光分插复用器。运用复合波导的三维正交模式,对器件的三种可能的结构进行了理论分析,选出粗波导光栅型结构。利用耦合模理论,模拟了斜光栅的耦合特性并对其倾斜角进行优化设计。通过回波峰值设计法,将器件的工作波长放在波分复用信道之内,回波峰值波长放在波分复用信道之外,使得器件的性能大有提高。模拟结果表明器件的串扰可达到-30 dB,回波损耗可达到-25 dB。同时,器件的关键工艺容差较大,易于批量化生产。当斜光栅的倾斜角度在2.5°到4.5°之间时,器件的串扰低于-28 dB,回波损耗低于-22 dB。     

波导侧壁起伏对聚酰亚胺波导光学梳状滤波器串扰特性的影响及其改善方法

提出了一种结构模型来分析由工艺引起的波导侧壁起伏对于聚合物波导光学梳状滤波器的滤波特性的影响。含氟聚酰亚胺高分子聚合物制备多级马赫一曾德尔串联型光学梳状滤波器件的工作参量为中心波长1550nm,波长间隔为0．8nm,40通道的波长交错分离。模拟计算：表明,对由高分子聚合物材料制备的多级马赫-曾德尔串联型光学梳状滤波器件,其主要影响是增大了信道之间的串扰,中心波长1550nm处的信道串扰由理想情况下的-40dB降为-12dB,极大地影响了器件的性能。在此基础上,提出一种改善光学梳状滤波器串扰性能的新结构,该结构由多级马赫-曾德尔耦合器和微环共振滤波器串接构成,40个通道的串扰改善为-0dB以下。     

阵列波导光栅解调系统光电集成中Si纳米线AWG的设计

设计了一种阵列波导光栅解调集成系统中的8通道Si纳米线阵列波导光栅波分复用器。根据材料的折射率设计了单模波导截面尺寸,利用光束传播法对所设计阵列波导光栅进行了模拟。结果表明,器件尺寸为200μm×219μm,远小于目前技术较成熟的硅基SiO2的尺寸,光功率分布符合高斯分布,信道间隔为1.8nm,串扰小于-21dB。对小尺寸AWG的设计具有参考意义。     

低插入损耗阵列波导光栅的设计

研究了阵列波导光栅的插入损耗.针对损耗来源,讨论了各项损耗的研究方法.分析了结构参量对损耗的影响,讨论了降低损耗的设计思路.对结构参量进行优化,设计了8通道200 GHz间隔的阵列波导光栅,中心通道插入损耗为1.37 dB,低于目前商用器件的1/2.对阵列波导光栅的设计具有一定的指导意义.     

聚合物阵列波导光栅波分复用器中波导的弯曲损耗

本文对聚合物阵列波导光栅(AWG)波分复用器中波导的弯曲损耗进行了理论分析。为了使AWG器件中单模传输时波导的弯曲损耗尽量地减小，结合计算实例对波导的弯曲半径、弯曲角度和弯曲弧长等几何参量的选择进行了适当的讨论。     

49信道绝热低偏振相关全聚合物阵列波导光栅EI北大核心CSCD

研制了一种新型全聚合物49信道绝热低偏振相关阵列波导光栅(AWG)芯片。利用直接紫外光写入技术,实现了波导芯片的设计与制备。利用Matlab软件对AWG的传输特性进行了优化模拟,通过对聚合物衬底的热膨胀系数和聚合物波导的热光系数进行调控,得到了器件良好的绝热低偏振相关特性。测得AWG的中心波长为1550.918 nm,波长间隔为0.8 nm,插入损耗的信道变化范围是5.51 d B^10.62 d B,串扰大于20 d B,偏振漂移和温度变化分别是0.08 nm和0.03 nm/K。这种新技术十分适用于高性能多功能集成光路中,具有广阔的应用前景。     

阵列波导光栅平坦化的研究

阵列波导光栅的平坦化在实际应用中有很重要的意义.本文系统地研究了阵列波导光栅的平坦化.在输入波导、输出波导、阵列波导输入端与输出端上分别引入了指数型锥形波导.通过改变锥形波导的形状和尺寸来实现平坦化的优化.本文首先从理论上论述了引入指数型锥形波导的输出光谱特性,给出了结构参量的关系表达式,阐明了输入波导处的锥形波导是影响输出光谱平坦化的主要因素,阵列波导和输出波导处的锥形波导对输出光谱的平坦化有一定的影响.其次采用数值模拟的方法模拟了输出光谱,优化了结构参量,总结出了指数型锥形波导对平坦化影响的趋势和规律.模拟结果显示,输出光谱1 dB带宽大于通道间隔的50%,插入损耗从5.2 dB减小到了4.0 dB,串扰小于-30 dB.最后,本文给出了实验结果,插入损耗减小了0.87 dB,串扰减小了3.67 dB,1 dB带宽增加0.1 nm,增加了54.7%.实验结果表明引入指数型锥形波导提高了阵列波导光栅器件的光谱性能.     

Fabrication of ultralow-loss Si/SiO(2) waveguides by roughness reduction

We demonstrate 0.8-dB/cm transmission loss for a single-mode, strip Si/SiO(2) waveguide with submicrometer cross-sectional dimensions. We compare the conventional waveguide-fabrication method with two smoothing technologies that we have developed, oxidation smoothing and anisotropic etching. We observe significant reduction of sidewall roughness with our smoothing technologies, which directly results in reduced scattering losses. The rapid increase in the scattering losses as the waveguide dimension is miniaturized, as seen in conventionally fabricated waveguides, is effectively suppressed in the waveguides made with our smoothing technologies. In the oxidation smoothing case, the loss is reduced from 32 dB/cm for the conventional fabrication method to 0.8 dB/cm for the single-mode waveguide width of 0.5 microm . This is to our knowledge the smallest reported loss for a high-index-difference system such as a Si/SiO(2) strip waveguide.     

Analytical modeling of loss characteristics of a polymer arrayed waveguide grating multiplexer

Theoretical analysis is performed for the loss characteristics of a polymer arrayed waveguide grating (AWG) multiplexer around the central wavelength of 1.55 μm with the wavelength spacing of 1.6 nm. The total loss of the device includes the diffraction loss in the input and output (I/O) slab waveguides, bent loss caused by the AWG and I/O channels, leakage loss resulted from the high refractive index substrate, and propagation loss due to the absorption and scattering of the materials of the device. The effects of some structural parameters on the loss characteristics are investigated and discussed. The computed results show that when we select the core thickness as 4 μm, core width as 6 μm, pitch of adjacent waveguides as 15.5 μm, diffraction order as 50, the number of the arrayed waveguides as 91, that of the I/O channels as 17, confined layer thickness between the core and the substrate as 10 μm, distance between the focal point and the origin as 5500 μm, and central angle between the central waveguide and the x-axis (i.e. the vertical of the symmetrical line of the device) as 60°, the total loss of the device can be dropped to the range 3.79–7.93 dB.     

A concise design of 16 × 16 polymer AWG with low insertion loss and crosstalk

In this paper, a 16-channel arrayed waveguide grating multiplexer (AWG) has been designed using polymer materials with 1.5% refractive index difference. Certain important parameters are optimized using the coupling mode theory and Beam Propagation Method. The factors that affect the insertion loss and the crosstalk are analyzed in this paper. In our design we introduced the parabolic taper structure and evaluated the suitable number of the arrayed waveguide, obtaining a total insertion loss of 2.19 dB. For obtaining a low crosstalk we evaluate the pitches of adjacent input/output waveguides ΔX and arrayed waveguides d as different values. We chose the value of ΔX about 2.5 times of d by enlarging the pitches of adjacent input/output waveguides. The crosstalk of the designed AWG is lower than −40 dB.     

Reduction of sidewall roughness in silicon-on-insulator rib waveguides

Silicon-on-insulator (SOI) rib waveguides with residual sidewall roughness were achieved through inductive coupled plasma reactive ion etching (ICPRIE) process. Sidewall roughness is the dominant scattering loss source. Conventional ICPRIE could result in the sidewall ripples derived from the etch/deposition cycle steps. Mixed ICPRIE process and hydrogen annealing were used to improve the sidewall roughness of SOI rib waveguides and eliminate the sidewall ripples. Scan electron microscope and atomic force microscope were used to demonstrate the surface profiles of the sidewall. The results indicated that the sidewall roughness could be low down to 0.3 nm level by optimization and combination of these two techniques and the ripples disappeared. According to the scattering theory developed by Payne and Lacey, the scattering loss could be reduced to below 0.01 dB/cm.     

Reduction of scattering loss of silicon slot waveguides by RCA smoothing

Because of stronger optical confinement density, silicon slot waveguides tend to have higher scattering loss than normal ridge waveguides with same sidewall roughness. A wet chemical process is found to be highly effective in reducing the surface roughness and scattering loss. A reduction in scattering loss by 10.2 dB/cm for TE and 8.5 dB/cm for TM polarizations has been achieved.     

O波段8通道硅基二氧化硅平坦化阵列波导光栅的设计及制备

设计并制作了一款应用于IEEE 200/400GbE标准802.3bs的阵列波导光栅.该阵列波导光栅使用2.0%的超高折射率差硅基二氧化硅材料,使得芯片尺寸及损耗较小.为了获得平坦化的接收光谱,将输出波导进行展宽,采用多模波导结构,激发若干个高阶模,数个模式叠加使得原本高斯状的光谱顶部产生平坦化,形成箱形接收光谱.设计的阵列波导光栅的中心波长为1 291.10nm,通道间隔为800GHz,芯片尺寸为11mm×4mm.经过等离子增强化学气相沉积和感应耦合等离子刻蚀工艺制备了芯片,测试结果表明最小的插入损耗为-3.3dB,相邻通道间串扰小于-20dB,单通道1dB带宽在2.12~3.06nm范围,实现了良好的解复用和平坦化效果,在实际光通信系统中有一定的实用价值.     

Loss reduction in silicon nanophotonic waveguide micro-bends through etch profile improvement

Single mode silicon photonic wire waveguides allow low-loss sharp micro-bends, which enables compact photonic devices and circuits. The circuit compactness is achieved at the cost of loss induced by micro-bends, which can seriously affect the device performance. The bend loss strongly depends on the bend radius, polarization, waveguide dimension and profile. In this paper, we present the effect of waveguide profile on the bend loss. We present waveguide profile improvement with optimized etch chemistry and the role of etch chemistry in adapting the etch profile of silicon is investigated. We experimentally demonstrate that by making the waveguide sidewalls vertical, the bend loss can be reduced up to 25% without affecting the propagation loss of the photonic wires. The bend loss of a 2 μm bend has been reduced from 0.039dB/90° bend to 0.028dB/90° bend by changing the sidewall angle from 81° to 90°, respectively. The propagation loss of 2.7 ± 0.1dB/cm and 3 ± 0.09dB/cm was observed for sloped and vertical photonic wires respectively was obtained.     

A novel wavelength dispersive device with a dispersive element based on staircase-like straight and parallel arrayed waveguides

We propose a new type of arrayed waveguide grating (AWG) multiplexer/demultiplexer based on modified group refractive index. This device is composed by an array of straight and parallel waveguides of equal length and each waveguide consist of two sections with different width. The length of the two sections are changed from a waveguide to the adjacent one following a linear dependence resulting in a wavelength dispersive waveguide array. An example of the device design for silicon-on-insulator (SOI) platform is provided and numerical simulations have been carried out for various arrayed waveguide parameters. We demonstrate that the group index modification can be used for tailoring device dispersion properties, and that it can also result in new dispersion characteristics predicted numerically not observed in conventional AWGs. Additional advantages are that the demultiplexer does not necessarily require bending waveguide sections as in a conventional AWG (de)multiplexers, and thus yields highly compact devices with potentially very low insertion loss. Channel spacing of 1 nm have been predicted for sub-micron waveguides sizes. In this paper it is also proposed a novel wavefront converter based on waveguide array lens-like element with waveguides broadened sections. Numerical results for different input/output geometries are analized.     

Parameter optimization and structural design of polymer arrayed waveguide grating multiplexer

First some important parameters are optimized for the structural design of a polymer arrayed waveguide grating (AWG) multiplexer around the central wavelength of 1.55 μm with the wavelength spacing of 1.6 nm. These parameters include the thickness and width of the guide core, mode effective refractive indices and group refractive index, diffraction order, pitch of adjacent waveguides, length difference of adjacent arrayed waveguides, focal length of slab waveguides, free spectral range (FSR), the number of input/output (I/O) channels, and that of arrayed waveguides. Then the bent angles, radii and lengths of all the input/output channels and arrayed waveguides are determined. Finally, a schematic waveguide layout of this device is presented, which contains 2 slabs, 11 input channels, 11 output channels, and 91 arrayed waveguides.