共查询到19条相似文献,搜索用时 265 毫秒
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用带有反应溅射装置的走带系统在立方织构的Ni-5% W衬底上连续制备了长10 cm的CeO2隔离层.为避免金属衬底氧化,以H2O作为反应气体.论文主要研究了衬底温度、走带速率对CeO2隔离层外延生长的影响.用X射线θ~2θ扫描,ψ扫描对薄膜的取向和织构进行表征.结果显示在温度650 ℃,走带速度2.5 mm/s的条件下,连续制备的CeO2隔离层有效地继承并改善了基底的织构,平均平面内ψ扫描半高宽为6.18°,扫描电镜(SEM)观察表明薄膜表面致密,且无裂纹生成. 相似文献
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电化学沉积法制备高温超导YBa2Cu3O7-δ涂层导体缓冲层具有工艺简单、设备要求低、易于连续化批量制备等优点。采用电化学沉积法,在双轴织构的Ni-5at.%W(Ni-5W)金属基带上成功制备出了具有良好c轴取向的CeO2缓冲层薄膜。利用X射线衍射、极图、扫描电子显微镜和原子力显微镜等对上述氧化物薄膜的织构、表面形貌等进行表征。重点研究了薄膜厚度、退火温度、退火时间等工艺对薄膜外延生长及其表面形貌的影响,结果表明:电化学沉积方法制备的CeO2缓冲层具有很好的双轴织构、表面平整、均一,粗糙度低,表现出良好的缓冲层性质。结合金属有机化学溶液超导层的制备技术,本工作展示了一条全化学法制备第二代高温超导带材的技术路线,具有很好的应用前景。 相似文献
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基于反应直流溅射法,采用镶嵌有钇粒的金属锆作为靶材,去离子水蒸汽为氧化反应气体,在有Y2O3种子层的双轴织构Ni-5at.%W基带上,系统地研究了温度和卷绕速度对YSZ阻挡层薄膜结构及表面形貌的影响。X射线衍射(XRD)分析表明,生长温度在700℃时制备的薄膜呈现明显的(002)取向;原子力显微镜(AFM)分析显示,该温度下制备的薄膜表面致密、无孔洞、无裂纹。在不同的卷绕速度下,虽然薄膜均为纯c轴取向,但其均方根粗糙度(RMS)和微粒大小均有较大差别。快速制备可达到抑制基片表面氧化、助于薄膜取向改善、提高薄膜制备效率的目的。 相似文献
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电化学沉积是一种工艺简单、 成本低廉、 并且易于批量生产 YBa2Cu3 O7 -δ 涂层导体缓冲层的方法. 本文成功的在双轴织构的 Ni-5at. % W (Ni-5 W) 金属基带上外延生长了 Y2 O3 缓冲层薄膜. 原子力显微镜 (AFM) 测量表明 Y2 O3 薄膜表面致密, 粗糙度小, 其表面粗糙度仅为1 .8 nm. 电化学沉积与磁控溅射相结合获得了 MS-GZO/EDY2 O3 双层缓冲层, 在此缓冲层结构上成功地外延生长了 YBa2Cu3 O7 -δ 超导层, 液氮温度下临界电流密度J c 为0.65 MA/cm2 相似文献
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利用射频反应共溅射方法制备了Y掺杂Al2O3电介质薄膜,用掠入射x射线衍射检测了薄膜的结构,用高分辨率扫描电子显微镜(HRSEM)、原子力显微镜(AFM)观察了薄膜断面和表面形貌,用高频C-V和变频C-V及J-V测量了样品的电学特性.结果表明,Y的掺入使电介质薄膜的介电常数k有了很大提高(8.14-11.8),并体现出了较好的介电特性.分析认为:与氧具有较大电负性差的Y离子的加入,增大了薄膜中的金属-氧键(M-O)的强度;同时,Y的加入使Al2O3的结构和原子配位发生了改变,从而提高了离子极化对薄膜介电常数的贡献.退火前后的XRD谱均显示薄膜为非晶态;HRSEM断面和AFM形貌像显示所制备的薄膜非常平整,能够满足器件要求. 相似文献
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SiO2溶胶及其静电自组装薄膜的制备 总被引:4,自引:0,他引:4
采用HCl催化、NH3 ·H2 O催化、HCl与NH3 ·H2 O分步催化三种途径制备了SiO2 胶体 ,用透射电镜观察了胶体粒子的形貌 .用静电自组装 (ESAM)法制备了聚电解质PDDA与SiO2 胶体粒子的有机 /无机复合光学薄膜 .实验结果表明 ,用HCl催化制备的SiO2 透明溶胶不适合于用ESAM法制备薄膜 ,用HCl与NH3 ·H2 O分步催化以及用NH3 ·H2 O单独催化制备的SiO2 胶体适合于用ESAM法制备光学薄膜 .薄膜的透射电镜微观察结果表明 ,以HCl与NH3 ·H2 O分步催化的SiO2 胶体制备的PDDA/SiO2 薄膜为连续结构 ,NH3 ·H2 O单独催化的为颗粒堆积 .研究了薄膜透光率与薄膜层数的关系 ,考察了薄膜的机械强度 .结果显示 ,以NH3 ·H2 O单独催化的SiO2 胶体制备的光学薄膜的增透效果较好 ,但耐机械擦伤强度较弱 相似文献
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K. Srinivasarao B. Rajinikanth K. Pandurangarao P. K. Mukhopadhyay 《Applied Physics A: Materials Science & Processing》2012,108(1):247-254
The nanocrystalline ZnO thin films were deposited by pulsed laser deposition on quartz and i-Si (100) substrates at different substrate temperatures (473 K–873 K) and at different mixed partial pressures (0.05, 0.01, and 0.5 mbar) of Ar+O2. The structural studies from XRD spectra reveals that the films deposited at 0.05 mbar and at lower substrate temperatures were c-axis oriented with predominant (002) crystallographic orientation. At 873 K along with (002) orientation, additional crystallographic orientations were also observed in case of films deposited at 0.01 and 0.5 mbar pressures. The composition of Zinc and Oxygen in ZnO films from EDAX reveals that the films deposited at lower partial pressures were have high at.% of O2 whereas higher partial pressures and substrate temperatures had high at.% Zn. The surface microstructure of the films show that the films deposited at lower partial pressures (0.05 mbar ) and at lower substrate temperatures (473 K) were found to have nanoparticles of size 15 nm where as films deposited at 873 K have nanorods. The length of these nanorods increases with increasing Ar+O2 partial pressure to 0.5 mbar. The optical energy gap of the film deposited at lower partial pressure and substrate temperature was 3.3 eV and decrease with the increase of substrate temperatures. The films deposited at 0.5 mbar and at 873 K emitted an intense luminescence at a wavelength of 390 nm. The measured thickness of deposited films by spectroscopic ellipsometry is around 456 nm. 相似文献
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Hua Zhang Jian YangHuizhou Liu Shuming Wang 《Physica C: Superconductivity and its Applications》2010,470(22):1998-2001
This paper reports CeO2/YSZ/Y2O3 buffer layers deposited on biaxially textured NiW substrates by DC reactive sputtering in a reel-to-reel system. The effect of partial pressure of water vapor (PH2O) on surface morphology and orientation of the Y2O3 films was examined. The obtained CeO2/YSZ/Y2O3 buffer layers exhibit a highly biaxial texture, with in- and out-of-plane FWHM values respectively in the range of 6.0–7.0° and 4.5–5.5°. Crystallographic consistency of CeO2/YSZ/Y2O3 along meter length is excellent. Atomic force microscope observation (AFM) reveals a smooth, continuous and crack-free surface with a Root-mean-square roughness (RMS) lower than 10 nm. 相似文献
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Thin films of Eu-doped Y2O3 were deposited using the pulsed laser ablation technique on amorphous fused silica substrates. The effect of oxygen partial pressure (pO2) and substrate temperature on the structural and optical characteristics of the deposited films were investigated. All the deposited films were crystalline, showing preferred orientation along the (111) plane, irrespective of oxygen partial pressure and substrate temperature. The film deposited at 0.005?mbar pO2 exhibited better crystallinity with minimum FWHM at a substrate temperature of 600°C. All the films deposited at various substrate temperatures and different partial pressure (at 600°C) exhibited a red luminescence peak at 615?nm corresponding to the 5D0–7F1 transition in Eu3+. Photoluminescence excitation spectra exhibited two bands, one corresponding to band to band excitation (212?nm) of the host and the other to charge transfer band excitation (245?nm). A microstructure analysis revealed that surface roughness of the as-deposited films increases with increase in oxygen partial pressure. 相似文献
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T. P. Krinitsina S. V. Sudareva Yu. V. Blinova E. I. Kuznetsova E. P. Romanov M. V. Degtyarev O. V. Snigirev N. V. Porokhov D. N. Rakov Yu. N. Belotelova 《Physics of the Solid State》2013,55(2):262-268
The structure of buffer layers and deposited YBa2Cu3O x (Y123) films with a high critical current density (~106 A/cm2) has been investigated by different methods. These superconducting films and buffer layers are found to have a fine-grained structure, which, along with the high texture of Y123 films of the (001) type, is believed to be responsible for the high critical current density. An unusual texture is revealed in buffer layers, which differs from that of substrates and Y123 films. The superconducting films deposited on buffer CeO2 layers exhibit a system of orthogonal lines; in the case under consideration, this is a manifestation of a domain structure with Y123 particles at boundaries. 相似文献
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G. Balakrishnan K. Thanigaiarul P. Sudhakara Jung Il Song 《Applied Physics A: Materials Science & Processing》2013,110(2):427-432
The zirconium oxide (ZrO2) thin films are deposited on Si (100) and quartz substrates at various substrate temperatures (room temperature–973 K) at an optimized oxygen partial pressure of 3×10?2 mbar using pulsed laser deposition technique. The effect of substrate temperature on microstructural, optical and mechanical properties of the films is investigated. The X-ray diffraction studies show that the films deposited at temperatures ≤773 K are monoclinic, while the films deposited at temperatures ≥873 K show both monoclinic and tetragonal phases. Tetragonal phase content increases with the increase of substrate temperatures. The surface morphology and roughness are investigated using atomic force microscope in contact mode. The optical properties of the films show that the refractive indices (at 550 nm) are found to increase from 1.84 to 2.35 as the temperature raises from room temperature (RT) to 973 K. Nanoindentation measurements show that the hardness of the films is 11.8 and 13.7 GPa for the films deposited at 300 and 973 K, respectively. 相似文献