| 单源进液金属有机化学气相沉积法工作气压对YBCO薄膜制备的影响研究 |
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| 引用本文： | 敬通国,高磊,徐亚新,程崛,王锡彬,薛炎,熊杰,陶伯万.单源进液金属有机化学气相沉积法工作气压对YBCO薄膜制备的影响研究[J].低温与超导,2012,40(4):23-26. |
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| 作者姓名： | 敬通国 高磊 徐亚新 程崛 王锡彬 薛炎 熊杰 陶伯万 |
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| 作者单位： | 电子科技大学电子薄膜与集成器件国家重点实验室,成都,610054 |
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| 摘 要： | 基于金属有机化学气相沉积法(MOCVD),在沉积有Y2O3/YSZ/ CeO2( YYC)多层过渡层的Ni - W_at.5％金属基带上沉积YBa2Cu3O7-x(YBCO)超导薄膜.通过对单源进液系统的优化,使金属有机源连续稳定地输送到蒸发皿进行闪蒸.优化总气压并通入N2O气氛,以获得高质量的YBCO薄膜.在优化的温...
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| 关 键 词： | 单源系统 YBCO高温超导薄膜 金属有机物化学气相沉积 |
Study on the influence of YB2C3O7-x thin film on the total pressure by the single source liquid delivering MOCVD |
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| Jing Tongguo
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Gao Lei
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Xu Yaxin
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Chen Jue
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Wang Xibin
,
Xue Yan
,
Xiong Jie
,
Tao Bowan.Study on the influence of YB2C3O7-x thin film on the total pressure by the single source liquid delivering MOCVD[J].Cryogenics and Superconductivity,2012,40(4):23-26. |
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| Authors: | Jing Tongguo Gao Lei Xu Yaxin Chen Jue Wang Xibin Xue Yan Xiong Jie Tao Bowan |
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| Institution: | (State Key Laboratory of Electronic Thin Films Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China) |
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| Abstract: | In this paper,YBa2Cu3O7-x superconducting thin films were deposited on the Y2O3/YSZ/CeO2(YYC)buffered Ni-W_at 5% films by Metal Organic Chemical Vapor Deposition(MOCVD).Optimized single source liquid delivering equipment was used for continuous and stable supply of the metal organic source.With the total gas pressure of 380Pa,O2 and N2O partial pressure of 200Pa,high quality YBCO film was obitained and its critical current density Jc reached 0.2MA/cm2.Compared to the FWHM values of out-of-plane and in-plane of CeO2 and subsquent YBCO,YBCO films were significantly improved. |
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| Keywords: | Single source delivery YBCO superconducting thin films MOCVD |
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