在金属基带上用激光脉冲沉积法制备帽子层CeO_2的研究

利用脉冲激光沉积法在带有Y2O3、YSZ隔离层的金属基带上制备了CeO2帽子层。主要讨论了温度、激光脉冲频率对CeO2隔离层的影响,用X射线θ~2θ扫描、Φ扫描对薄膜的取向和织构进行表征。结果表明在温度为610℃、激光频率为10Hz、1Pa氧压下制备的CeO2隔离层能有效地继承衬底的织构,平均平面内Φ扫描半高宽度为6.9°。扫描电镜可以观察到薄膜表面致密且无裂纹,原子力显微镜观测表面平均粗糙度在10nm以下。

Growth of CeO2 cap layer for YBCO coated conductor on the metal substrate by PLD

The CeO2 Cap Layer was deposited on the cube textured metallic Ni-W substrates,on which Y2O3 and YSZ buffer layers had been deposited,by Pulsed Laser Deposition(PLD).X-ray θ~2θ scan,Φ-scan were used to observe the C-axis orientation and the in-plane alignment of the cap layer.It can be found that the CeO2 film has effectively inherited the texture of the substrate,the average in-plane Φ-scan Full Width High Maximum(FWHM) value is 6.9°.Even more,the result of Scanning Electron Microscopy(SEM) revealed a dense and crack-free CeO2 surface morphology,and the average range of the CeO2 surface was about 10nm observed by Atomic Force Microscopy(AFM).