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材料的载流子浓度和迁移率是影响器件性能的关键因素, 变温Hall测试结果证明杂质掺杂AlGaN中的载流子浓度和迁移率随温度 降低而减小.然而极化诱导掺杂的载流子浓度和迁移率不受温度变化的影响.以准绝缘 的GaN体材料作为衬底, 在组分分层渐变的AlGaN中实现的极化诱导掺杂浓度 仅仅在1017 cm-3数量级甚至更低. 本研究采用载流子浓度为1016 cm-3量级的非有意n型掺杂GaN模板为衬底, 用极化诱导掺杂技术在分子束外延生长的AlGaN薄膜材料中实现了高 达1020 cm-3 量级的超高电子浓度. 准绝缘的体材GaN半导体作衬底时, 只有表面自由电子作为极化掺杂源, 而非有意掺杂的GaN模板衬底除了提供表面自由电子外,还能为极化电场 提供更多的自由电子"源", 从而实现超高载流子浓度的n型掺杂. 相似文献
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利用等离子增强化学气相沉积系统制备了本征非晶硅薄膜,并选用488 nm波长的连续激光进行晶化.采用喇曼测试技术对本征非晶硅薄膜在不同激光功率密度和扫描时间下的晶化状态进行了表征,并用514 nm波长与488 nm波长对样品的晶化效果进行了比较.测试结果显示:激光照射时间60 s, 激光功率密度在1.57×105 W/cm2时,能实现非晶硅向多晶硅的转变,在功率密度达到2.7 56×105 W/cm2时,有非晶开始向单晶转变,随着激光功率密度的继续增加,晶化结果仍为单晶;在功率密度为2.362×105 W/cm2下,60 s照射时间晶化效果较好;在功率密度为2.756×105 W/cm2和照射时间为60 s的条件下,用488 nm波长比514 nm波长的激光晶化本征非晶硅薄膜效果较好,并均为单晶态. 相似文献
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在室温下制备了基于氧化铟锡(ITO)的底栅结构无结薄膜晶体管. 源漏电极和沟道层都是同样的ITO薄膜材料,没有形成传统的源极结和漏极结, 因而极大的简化了制备流程,降低了工艺成本.使用具有大电容的双电荷层SiO2作为栅介质, 发现当ITO沟道层的厚度降到约20 nm时, 器件的栅极电压可以很好的调控源漏电流. 这些无结薄膜晶体管具有良好的器件性能: 低工作电压(1.5 V), 小亚阈值摆幅(0.13 V/dec)、 高迁移率(21.56 cm2/V·s)和大开关电流比(1.3× 106). 这些器件即使直接在大气环境中放置4个月, 器件性能也没有明显恶化:亚阈值摆幅保持为0.13 V/dec,迁移率略微下降至18.99 cm2/V·s,开关电流比依然大于106.这种工作电压低、工艺简单、 性能稳定的无结低电压薄膜晶体管非常有希望应用于低能耗便携式电子产品以及新型传感器领域. 相似文献
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材料的迁移率是其关键电学特性之一.有机材料迁移率的研究对于有机电致发光器件、 有机太阳电池、有机薄膜场效应晶体管性能的提高有重要的意义. 应用简单易行的空间电荷限制电流方法,对基于三(8-羟基喹啉)铝(Alq3) 的四种单载流子器件电流密度-电压曲线特性进行研究, 根据空间电荷限制电流模型,拟合出Alq3材料在四种器件中的零场电子迁移率和电场依赖因子,并且给出Alq3电子迁移率随外加偏压的变化趋势. 实验结果表明,顶电极铝蒸镀到缓冲层氟化锂(1 nm)和Alq3 (100 nm)的表面后, 可以明显改善Alq3的零场迁移率和电场依赖因子. 认为产生这种现象的原因是氟化锂可以使铝和Alq3发生络合反应, 形成Li+1Alq-1粒子,形成良好的欧姆接触,使得电子的注入效率大大提高. 相似文献
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研制出CVD金刚石薄膜探测器,在国家串列加速器和60Co稳态辐射源上分别完成了该探测器对9 MeV质子束流和1.25 MeV γ射线的辐照性能研究。结果表明:该探测器在9 MeV质子照射累积强度达到1013 cm-2时,探测器信号电荷收集效率减小量低于3.5%,辐照前后探测器暗电流没有明显变化。计算得到9 MeV质子对该探测器的损伤系数为1.3×10-16 μm-1·cm2。由于γ射线与金刚石作用产生的电子起到了填补缺陷的作用,探测器信号电荷收集效率随γ射线照射剂量的增加略有增加,在γ射线累积照射量达到10.32 C/kg时,其增幅小于0.7%。说明金刚石薄膜探测器具有较高耐辐照强度,适用于高强度辐射测量领域。 相似文献
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研究了电子通量对ZnO/K2SiO3热控涂层光学性能的影响。分别采用通量为5×1011/cm2·s,8×1011/cm2·s,1×1012/cm2·s 和5×1012/cm2·s的电子对试样进行辐照。电子辐照下涂层的光学性能发生了退化,并且发现了退化涂层在空气中的“漂白”现象。分析了ZnO/K2SiO3热控涂层光学性能的退化机制,同时讨论了电子通量对太阳光谱吸收系数的影响。实验结果发现,在5×1011~1×1012/cm2·s的电子通量范围内,电子通量对ZnO/K2SiO3热控涂层光学性能的影响相同。因此在这个电子通量范围内,采用加速地面试验来模拟空间的电子辐照效应是有效的。 相似文献
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采用激光分子束外延技术,利用两步法,在Si单晶衬底上成功地外延生长出TiN薄膜材料.原子力显微镜分析结果显示, TiN薄膜材料表面光滑,在10 μm×10 μm范围内,均方根粗糙度为0842nm.霍耳效应测量结果显示,TiN薄膜在室温条件下的电阻率为36×10-5Ω·cm,迁移率达到5830 cm2/V·S,表明TiN薄膜材料是一种优良的电极材料.X射线θ—2θ扫描结果和很高的迁移率均表明,高质量的TiN薄膜材料被外延在Si衬底 相似文献
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利用混合物理化学气相沉积法(hybrid physical-chemical vapor deposition, HPCVD)可以制备出高性能的MgB2超导薄膜, 再对薄膜进行钛(Ti)离子辐照处理.经过辐照处理后的样品被掺入了Ti元素, 与未处理的干净MgB2样品相比,其超导转变温度没有出现大幅度的下降, 而在外加磁场下的临界电流密度得到了明显的提高,同时样品的上临界磁场也得到了提高. 在温度5 K, 外加垂直磁场为4 T的情况下, Ti离子辐照剂量为1× 1013/cm2的样品的临界电流密度达到了1.72× 105 A/cm2, 比干净的MgB2要高出许多,而其超导转变温度仍能维持在39.9 K的较高水平. 相似文献
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Liang Xu Shuankui Li Zhiguo Wu Huajun Li De Yan Chunyu Zhang Pengju Zhang Pengxun Yan Xudong Li 《Applied Physics A: Materials Science & Processing》2011,103(1):59-65
Nanotip arrays of amorphous carbon with embedded hexagonal diamond nanoparticles were prepared at room temperature for use
as excellent field emitters by a unique combination of anodic aluminum oxide (AAO) template and filtered cathodic arc plasma
(FCAP) technology. In order to avoid nanopore array formation on the AAO surface, an effective multi-step treatment employing
anodization and pore-widening processes alternately was adopted. The nanotips were about 100 nm in width at the bottom and
150 nm in height with density up to 1010 cm−2. Transmission electron microscopy investigation indicates that many nanoparticles with diameters of about 10 nm were embedded
in the amorphous carbon matrix, which was proved to be hexagonal diamond phase by Raman spectrum and selected-area electron
diffraction. There is no previous literature report on the field emission properties of hexagonal diamond and its preparation
at room temperature under high-vacuum condition. The nanotip arrays with hexagonal diamond phase exhibit a low turn-on field
of 0.5 V/μm and a threshold field of 3.5 V/μm at 10 mA/cm2. It is believed that the existence of hexagonal diamond phase has improved the field emission properties. 相似文献
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Monto Carlo simulation of the behaviour of electrons during electron—assisted chemical vapour deposition of diamond 下载免费PDF全文
The behaviour of electrons during electron-assisted chemical vapour deposition of diamond is investigated using Monte Carlo simulation. The electron energy distribution and velocity distribution are obtained over a wide range of reduced field E/N (the ratio of the electric field to gas molecule density) from 100 to 2000 in units of 1Td=10-17Vcm2. Their effects on the diamond growth are also discussed. The main results obtained are as follows. (1) The velocity profile is asymmetric for the component parallel to the field. The velocity distribution has a peak shift in the field direction. Most electrons possess non-zero velocity parallel to the substrate. (2) The number of atomic H is a function of E/N. (3) High-quality diamond can be obtained under the condition of E/N from 50 to 800Td due to sufficient atomic H and electron bombardment. 相似文献
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The globe-like diamond microcrystalline-aggregates were fabricated by microwave plasma chemical vapor deposition (MPCVD) method. The ceramic with a Ti mental layer was used as substrate. The fabricated diamond was evaluated by Raman scattering spectroscopy, X-ray diffraction spectrum (XRD), and scanning electron microscope (SEM). The field emission properties were tested by using a diode structure in a vacuum. A phosphor-coated indium tin oxide (ITO) anode was used for observing and characterizing the field emission. It was found that the globe-like diamond microcrystalline-aggregates exhibited good electron emission properties. The turn-on field was only 0.55 V/μm, and emission current density as high as 11 mA/cm2 was obtained under an applied field of 2.9 V/μm for the first operation. The growth mechanism and field emission properties of the globe-like diamond microcrystalline-aggregates are discussed relating to microstructure and electrical conductivity. 相似文献
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T. Redel J. Eberlein R. Tkotz W. Hartmann M. Stetter R. Stark K. Frank J. Christiansen 《Applied Physics A: Materials Science & Processing》1992,54(6):520-522
The investigation of the interaction of pulsed electron beams with PMMA (polymethylmethacrylate) targets is reported. The electron beam of some 10–8 s in duration is produced in a pulsed low-pressure gas discharge. The beam power density of up to 108 W/cm2 leads to a surface plasma formation similar to that of the pulsed laser ablation process. The propagation of the ablated material and the shock wave inside the PMMA target are observed by means of Schlieren diagnostics. An electron density gradient of over 3×1019 cm–4 has been observed in the expanding plasma up to 1.5 s after the plasma formation. During the early stage of expansion, the expansion velocity of the plasma plume as determined by the steep electron density gradient is around 105 cm/s. The pressure behind the shock front inside the PMMA target as determined from the shock velocity exceeds 0.3 Gpa. 相似文献
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A. Bartels 《Applied Physics A: Materials Science & Processing》1975,8(1):59-64
Electron drift velocities have been measured in helium and hydrogen at 77.6 K and gas density of 6.6×1021 cm?3 (approximately 80 atm). At these high densities the electron drift velocities do not depend only on the ratio of the electric field to gas density (E/N). At constantE/N the electron drift velocity decreases with increasing gas density. In helium a decrease was found down to 6.4% of the value at low density, in hydrogen down to 0.52%. The results are discussed in terms of theories of multiple scattering. Legler's theory fits our data in the lower density range, but at the highest densities predicts too small an effect. The percolation theory by Eggarter and Cohen gives no agreement with the experiment. Up to the highest densities we did not find bubbles; slow negative charge carriers could be identified as oxygen ions. 相似文献
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利用低压化学气相沉积方法在以Au作催化剂的Si衬底上生长了InN纳米线. 扫描电子显微镜分析表明,这些纳米线的直径在60—100 nm的范围内, 而其长度大于1 μm.高分辨透射电子显微镜图像表明,合成的纳米线中含有六方相和立方相的InN晶体.这些InN纳米线具有良好的场发射特性和稳定的场发射电流,其开启场为10.02 V/μm(电流密度为10 μA/cm2),在24 V/μm 的电场下,其电流密度达到5.5 mA/cm2.此外,对InN纳米线的场发射机理也进行了讨论.
关键词:
InN纳米线
场电子发射
非线性Fower-Nordheim曲线 相似文献
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K. Požela A. Šilėnas J. Požela V. Jucienė G. B. Galiev J. S. Vasil’evskii E. A. Klimov 《Applied Physics A: Materials Science & Processing》2012,109(1):233-237
The alternating change of electron mobility values in the modulation doped InAlAs/InGaAs/InAlAs quantum well (QW) dependently on a thickness of the InAs layer inserted in the center of the QW is theoretically predicted and experimentally observed. The electron mobility enhancement by a factor of 1.5–2 takes place when the 4 nm-thick InAs layer is inserted into the 17 nm-width QW. The experimental maximal value of the electron drift velocity at the threshold electric field for intervalley electron scattering achieves (1.8?2)×107 cm/s and does not nearly depend on the thickness of the InAs insert. The high value of maximal drift velocity is conserved at the additional doping of the InAs insert up to electron density of 4×1012 cm?2 in the QW. 相似文献
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G. Bilalbegović 《The European Physical Journal D - Atomic, Molecular, Optical and Plasma Physics》2008,49(1):43-49
The first 52 fs of a time evolution of the electron density in OCS after an interaction with an intense sub 10 fs laser pulse
are studied using the time-dependent density functional theory. The nuclear motion in this linear trimer is simulated by the
classical molecular dynamics method. Laser fields of intensity 1013 W/cm2 and 1015 W/cm2 are used. Details of the laser induced changes of the structure, as well as the ionization rate are sensitive to the applied
field intensity and its polarization. It is found that under suitable conditions the OCS molecule bends soon after an interaction
with a laser pulse. A deviation from the linear geometry of up to 23.6° and charged ions of up to +3 are observed. The time
evolution of electric dipole moments and the time-dependent electron localization function (ELF) are also studied. 相似文献
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