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Effects of annealing process on characteristics of fully transparent zinc tin oxide thin-film transistor 下载免费PDF全文
Annealing effect on the performance of fully transparent thin-film transistor (TTFT), in which zinc tin oxide (ZnSnO) is used as the channel material and SiO2 as the gate insulator, is investigated. The ZnSnO active layer is deposited by radio frequency magnetron sputtering while a SiO2 gate insulator is formed by plasma-enhanced chemical vapor deposition. The saturation field-effect mobility and on/off ratio of the TTFT are improved by low temperature annealing in vacuum. Maximum saturation field-effect mobility and on/off ratio of 56.2 cm2/(V.s) and 3×10^5 are obtained, respectively. The transfer characteristics of the ZnSnO TPT are simulated using an analytical model and good agreement between measured and the calculated transfer characteristics is demonstrated. 相似文献
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Indium zinc oxide (IZO) thin films with different percentages of In content (In/[In+Zn]) are synthesized on glass substrates by magnetron sputtering, and the structural, electrical and optical properties of IZO thin films deposited at different In2O3 target powers are investigated. IZO thin films grown at different In2O3 target sputtering powers show evident morphological variation and different grain sizes. As the In2O3 sputtering power rises, the grain size becomes larger and electrical mobility increases. The film grown with an In2O3 target power of 100 W displays the highest electrical mobility of 13.5 cm·V-1·s-1 and the lowest resistivity of 2.4 × 10-3 Ω·cm. The average optical transmittance of the IZO thin film in the visible region reaches 80% and the band gap broadens with the increase of In2O3 target power, which is attributed to the increase in carrier concentration and is in accordance with Burstein-Moss shift theory. 相似文献
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磁控溅射气体参数对氧化铟薄膜特性的影响 总被引:1,自引:0,他引:1
采用射频磁控溅射法生长氧化铟薄膜,研究了溅射气压和溅射气体对氧化铟薄膜结构及光电特性的影响.X射线衍射结果表明制得的薄膜为立方结构的多晶体,随着溅射气压的升高,薄膜晶粒尺寸变大.1 Pa下沉积的氧化铟薄膜具有最大的迁移率和最小的载流子浓度,分别为15.2 cm2/V·s和1.19×1019cm-3.用O2溅射的氧化铟薄膜载流子浓度降至4.39×1013cm-3,在红外区(1.5~5.5μm)的平均透射率为85%,高于Ar溅射的薄膜,这可能是由于O2的加入减少了氧空位,降低了载流子浓度,使得自由载流子对红外光的吸收减弱. 相似文献
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