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Annealing effect on the performance of fully transparent thin-film transistor (TTFT), in which zinc tin oxide (ZnSnO) is used as the channel material and SiO2 as the gate insulator, is investigated. The ZnSnO active layer is deposited by radio frequency magnetron sputtering while a SiO2 gate insulator is formed by plasma-enhanced chemical vapor deposition. The saturation field-effect mobility and on/off ratio of the TTFT are improved by low temperature annealing in vacuum. Maximum saturation field-effect mobility and on/off ratio of 56.2 cm2/(V.s) and 3×10^5 are obtained, respectively. The transfer characteristics of the ZnSnO TPT are simulated using an analytical model and good agreement between measured and the calculated transfer characteristics is demonstrated.  相似文献   
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Indium zinc oxide (IZO) thin films with different percentages of In content (In/[In+Zn]) are synthesized on glass substrates by magnetron sputtering, and the structural, electrical and optical properties of IZO thin films deposited at different In2O3 target powers are investigated. IZO thin films grown at different In2O3 target sputtering powers show evident morphological variation and different grain sizes. As the In2O3 sputtering power rises, the grain size becomes larger and electrical mobility increases. The film grown with an In2O3 target power of 100 W displays the highest electrical mobility of 13.5 cm·V-1·s-1 and the lowest resistivity of 2.4 × 10-3 Ω·cm. The average optical transmittance of the IZO thin film in the visible region reaches 80% and the band gap broadens with the increase of In2O3 target power, which is attributed to the increase in carrier concentration and is in accordance with Burstein-Moss shift theory.  相似文献   
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采用磁控溅射方法在玻璃衬底上生长了In2O3晶体薄膜.该薄膜具有(111)晶面择优取向,晶粒尺寸达到33 nm.利用光刻工艺制作了以In2O3晶体薄膜为沟道层的底栅式薄膜晶体管.In2O3薄膜晶体管具有良好的栅压调制特性,场效应迁移率达到6.3 cm2/(V·s),开关电流比为3×103,阈值电压为-0.9 V.结果表明,In相似文献   
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王雄  才玺坤  原子健  朱夏明  邱东江  吴惠桢 《物理学报》2011,60(3):37305-037305
在ITO玻璃基底上用射频磁控溅射技术生长氧化锌锡(ZnSnO)沟道有源层、用PECVD生长SiO2薄膜作为薄膜晶体管的栅绝缘层研制了薄膜晶体管(TFT), 器件的场效应迁移率最高达到μn=9.1 cm2/(V ·s),阈值电压-2 V,电流开关比为104. 关键词: 氧化锌锡 薄膜晶体管 场效应迁移率  相似文献   
5.
磁控溅射气体参数对氧化铟薄膜特性的影响   总被引:1,自引:0,他引:1  
采用射频磁控溅射法生长氧化铟薄膜,研究了溅射气压和溅射气体对氧化铟薄膜结构及光电特性的影响.X射线衍射结果表明制得的薄膜为立方结构的多晶体,随着溅射气压的升高,薄膜晶粒尺寸变大.1 Pa下沉积的氧化铟薄膜具有最大的迁移率和最小的载流子浓度,分别为15.2 cm2/V·s和1.19×1019cm-3.用O2溅射的氧化铟薄膜载流子浓度降至4.39×1013cm-3,在红外区(1.5~5.5μm)的平均透射率为85%,高于Ar溅射的薄膜,这可能是由于O2的加入减少了氧空位,降低了载流子浓度,使得自由载流子对红外光的吸收减弱.  相似文献   
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