Preparation and Characteristics of GaN Films on Freestanding CVD Thick Diamond Films

Prefer-oriented and fine grained polycrystalline GaN films are prepared by plasma enhanced metal organic chemical vapour deposition on nucleation surfaces of freestanding thick diamond films. The characteristics of the GaN films are characterized by x-ray diffraction, reflection high energy electron diffraction and atomic force microscopy. The results indicate that the structure and morphology of the films are strongly dependent on the deposition temperature. The most significant improvements in morphological and structural properties of GaN films are obtained under the proper deposition temperature of 400°C.     

L-Shell Ionization Cross Section Measurements of Dysprosium and Samarium by Low-Energy Electron Impact

The Lα, Lβ and Lγ x-ray production cross sections of Dy and Sm by electron impact are measured at energies from near threshold to tens of keV. In the experiments, thin targets with thick substrates are used. Meanwhile, the electron transport bipartition model is used to eliminate the influence of electrons reflected from the thick substrates on measurements. The measured x-ray production cross sections are also compared with the theoretical predictions by Gryzinski and McGuire.     

Synthesis of [100] Wurtzite InN Nanowires and [011] Zinc-Blende InN Nanorods

One-dimensional wurtzite InN nanowires and zincblende InN nanorods are prepared by chemical vapour deposition （CVD） method on natural cleavage plane （110） of GaAs. The growth direction of InN nanowires is [100], with wurtzite structure. The stable crystal structure of InN is wurtzite （w-InN）, zincblende structure （z-InN） is only reported for 2D InN crystals before. However, in this work, the zincblende InN nanorods [011] are synthesized and characterized. The SEM and TEM images show that every nanorod shapes a conical tip, which can be explained by the anisotropy of growth process and the theory of Ehrlich Schwoebel barrier.     

Growth of Structured Non—crystalline Boron—Oxygen—Nitrogen Films and Measurement of Their Electrical Properties

The boron-oxygen-nitrogen(BON) films have been grown on Si wafer by the low-frequency rf-plasma-enhanced metal-organic chemical vapour deposition method.The homogeneous film structure of completely amorphous BON is first fabricated on a low-temperature-made buffer at 500℃ with N2 plasma and is observed with a highresolution-electron microscope by the transmission-electron diffraction.The results show that the interfaces among substrate/buffer/film are clear and straight in the structured film.A heterogeneous film containing nano-sized crystalline particles is also grown by a routine growth procedure as a referential structure,The C-V characteristic is measured on both the amprphous and crystal-containing films by using the metal-oxidesemiconductor structure,The dielectric constants of the films are,therefore,deduced to be 5.9 and 10.5 for the amorphous and crystal-containing films,respectively,The C-V results also indicate that more trapped charges exist in the amorphous film.The binding energy of the B,O.and N atoms in the amprphous film is higher than that in the crystal-containing one,and the N-content in the latter is found to be higher than that in the former by x-ray photo-electron spectroscopy.The different electrical Property of the films is thought to originate from the energy state of the covalent electrons.     

Growth of Nanocrystalline Silicon Films by Helicon Wave Plasma Chemical Vapour Deposition

Nanocrystalline silicon (nc-Si) thin films have been prepared by a helicon-wave plasma chemical vapour deposition technique on glass-Si substrates. The structural properties and the surface morphology are characterized by Raman spectroscopy, x-ray diffraction and atomic force microscopy. It is proven that the deposited films have the features of high crystalline fraction and large grain size compared with that in the normal plasma-enhanced chemical vapour deposition regime. The crystalline fraction of the deposited films varying from 0%to 72% can be obtained by adjusting the substrate temperature.     

Temperature dependences of optical properties,chemical composition,structure,and laser damage in Ta2O5 films

Ta2O5 films are prepared by e-beam evaporation with varied deposition temperatures,annealing temperatures,and annealing times.The effects of temperature on the optical properties,chemical composition,structure,and laserinduced damage threshold(LIDT) are systematically investigated.The results show that the increase of deposition temperature decreases the film transmittance slightly,yet annealing below 923 K is beneficial for the transmittance.The XRD analysis reveals that the film is in the amorphous phase when annealed below 873 K and in thehexagonal phase when annealed at 1073 K.While an interesting near-crystalline phase is found when annealed at 923 K.The LIDT increases with the deposition temperature increasing,whereas it increases firstly and then decreases as the annealing temperature increases.In addition,the increase of the annealing time from 4 h to 12 h is favourable to improving the LIDT,which is mainly due to the improvement of the O/Ta ratio.The highest LIDT film is obtained when annealed at 923 K,owing to the lowest density of defect.     

Field Emission Properties of Ball-Like Nano-Carbon Thin Films Deposited on Mo Films with Accidented Topography

Ball-like nano-earbon thin films （BNCTs） are grown on Mo layers by microwave plasma chemical vapour deposition （MPCVD） system. The Mo layers are deposited on ceramic substrates by electron beam deposition method and are pretreated by ultrasonically scratching. The optimization effects of ultrasonically scratching pretreatment on the surface micro-structures of carbon films are studied. It is found from field-emission scanning electron microscope （FE-SEM） images and Raman spectra that the surface structures of the carbon films deposited on Mo pretreated are improved, which are composed of highly uniform nano-structured carbon balls with considerable disorder structures. Field emission （FE） measurements are carried out using a diode structure. The experimental results indicate that the BNCTs exhibit good FE properties, which have the turn on field of 1.56 V/μm, and the current density of 1.0mA/cm^2 at electric field of 4.0 V/μm, the uniformly distributed emission site density from a broad well-proportioned emission area of 4 cm^2 are also obtained. Linearity is observed in Fowler Nordheim （F N） plots in higher field region, and the possible emission mechanism of BNCTs is discussed.     

ZnO Nanostructures Grown on A1N/Sapphire Substrates by MOCVD

ZnO nanorods and nanotubes are successful synthesized on A1N/sapphire substrates by metal-organic chemical vapour deposition （MOGVD）. The different morphology and structure properties of ZnO nanorods and nanotubes are found to be affected by the A1N under-layer. The photoluminescence spectra show the optical properties of the ZnO nanorods and nanotubes, in which a blueshift of UV emission is observed and is attributed to the surface effect.[第一段]     

A plating method for metal coating of fiber Bragg grating

We present a method for metal coating optical fiber and in-fiber Bragg grating. The technology process which is based on electroless plating and electroplating method is described in detail. The fiber is firstly coated with a thin copper or nickel plate with electroless plating method. Then, a thicker nickel plate is coated on the surface of the conductive layer. Under the optimum conditions, the surfaces of chemical plating and electroplating coatings are all smooth and compact. There is no visible defect found in the cross-section. Using this two-step metallization method, the in-fiber Bragg grating can be well protected and its thermal sensitivity can be enhanced. After the metallization process, the fiber sensor is successfully embedded in the 42CrMo steel by brazing method. Thus a smart metal structure is achieved. The embedding results show that the plating method for metallization protection of in-fiber Bragg grating is effective.     

Low-Temperature Growth of Polycrystalline silicon Films by SiCl4／H2 rf Plasma Enhanced Chemical Vapour Deposition

Polycrystalline silicon film was directly fabricated at 200℃ by the conventional plasma enhanced chemical vapour deposition method from SiCl4 with H2 dilution. The crystallization depends strongly on the deposition power.The maximum crystMlinity and the crystalline grain size are over 80% and 200—50Onm, respectively. The results of energy dispersive spectroscopy and infrared spectroscopy measurements demonstrate that the film is mostly composed of silicon, without impurities such as Cl, N, C and bonded H. It is suggested that the crystallization at such a low temperature originates from the effects of chlorine, i.e., in-situ chemical, etching, in-situ chemical cleaning, and the detachment of bonded H.     

单次分子镀法制备部分La系及~(238)U靶的实验研究

采用单次分子镀方法研究了异丙醇-硝酸体系中电流密度、分子镀持续时间及两极间距离对镀层性能和电沉积效率的影响,确定了制备La,Sm,Eu,Gd,Tb靶及238U靶的最佳工艺条件。因制备的靶不同,电流密度一般介于2—8mA/cm2之间,两极间最优距离为3cm,分子镀1h,用分光光度法测定各靶的沉积效率均高于85%。利用扫描电子显微镜(SEM)对部分靶的表面形貌分析后发现靶面结构均匀致密。目前制得的Gd靶和Tb靶已用于中国科学院近代物理研究所加速器SFC低能核化学终端上,利用19F束流轰击,分别产生了Ta和W的短寿命同位素,从而成功完成了Db(Z=105)及Sg(Z=106)的模型试验。     

Magnetic structures and related properties of some rare-earth intermetallic compounds, RCu2

The magnetic structures and some relevant bulk magnetic properties of R(Cu, Ni)₂ (R = Tb, Tb_zY_1−z, Dy, Ho, Er and Tm) are summarized. Basically, the magnetic structures are antiferromagnetically modulated with propagation vector a^*. For R = Tb, Dy, Ho the a-axis anisotropy dominates and the structures are longitudinally modulated. For R = Tm, Er (probably) the b-axis anisotropy dominates and this results in transversely modulated structures. For R = Tb, Dy the structures are collinear, For R = Ho, Er, Tm (probably) an incommensurate modulation coexists with the commensurate a^*-axis modulation at the lowest temperature.     

十种稀土金属电阻的压力效应

 使用Bundy和Dunn发展起来的带有烧结金刚石砧的Drickamer型高压装置，用固定点测压法标定实验压力，在室温及0~43 GPa的压力范围内测量了稀土金属中Pr、Nd、Sm、Gd、Tb、Dy、Ho、Tm、Lu和Yb的电阻随压力的变化。在各稀土元素的电阻随压力变化的曲线上，观测到了若干“凸起”和斜率突变点，根据Jayaraman提出的三价稀土在压力作用下的相变顺序，得到了这些突（凸）变点分别对应着hcp→Sm-type→dhcp→fcc相变顺序中的某一类型的相变压力。此外还观测到了Pr、Gd、Tb的fcc相随着压力再增高而发生的相变，根据已报导的关于Pr的工作，推测Gd和Tb的这一相变应为fcc→dfcc相变，它们分别发生在22.0和24.5 GPa。在本工作所得结果基础上对Johansson的三价稀土总相图进行了修正。     

DyxTbyY1-x-yP5O14晶体的荧光性质

研究了DyxTbgY1-x-yP5O14晶体的荧光特征,Dy3+离子对Tb3+离子5D3能级的猝灭作用和对5D4能级的敏化作用,讨论了Tb3+离子和Dy3+离子浓度间的关系及对荧光强度和荧光寿命的影响。     

β-delayed proton decay of the proton drip-line nucleus 142Ho in the rare-earth region

New β-delayed proton precursor 142Ho was produced via heavy ion induced reaction 106Cd(40Ca, p3n), and identified for the first time by using a He-jet fast tape transport system in combination with "p-γ" coincidence measurements. The β-delayed proton decay of 142Ho was observed and its half life was determined to be (0.4±0.1) s. By fitting the experimental relative branching ratios to final states in the proton daughter nucleus 141Tb and the energy spectrum of β-delayed protons with a statistical model calculation, the ground-state spin of 142Ho was assigned as 5, 6 or 7. Nuclear energy-potential-surface (EPS) calculations were performed using the Woods-Saxon Strutinsky method. The calculated results favored the assignments of 7- to 142Ho. AS the by-products, some γ-transitions in the proton daughter nuclei following the β-delayed proton decays of precursors 139Gd, 140Tb, 142Tb, and 143Dy were reported here for the first time.     

A study of magnetostriction,spin reorientation,and Mssbauer spectra of Tb_(0.3)Dy_(0.6)Pr_(0.1)(Fe_(1-x)Al_x)1.95 alloys with substitution of Fe by Al

The effects of Al substitution for Fe on the structure, magnetics, magnetostriction, anisotropy and spin reorientation of a series of Tb0.3Dy0.6Pr0.1(Fe1-xAlx)1.95 alloys (x=0.05, 0.1, 0.15, 0.2, 0.25, 0.3) at room temperature have been investigated. The alloys of Tb0.3Dy0.6Pr0.1(Fe1-xAlx)1.95 substantially retain MgCu2-type C-15 cubic Laves phase structure when x0.2. The mixed phases appear with x = 0.2, and cubic Laves phase decreases with increasing x. The magnetostriction of the Tb0.3Dy0.6Pr0.1(Fe1-xAlx)1.95 alloys decreases drastically with increasing x and the giant magnetostrictive effect disappears for x 0.15. Fortunately, a small amount of Al substitution is beneficial to a decrease in the magnetocrystalline anisotropy. The spin reorientation temperature decreases with increasing x. The analysis of the Mssbauer spectra indicates that the easy magnetization direction in the {110} plane deviates slightly from the main axis of symmetry with the increase of Al concentration x, namely, spin reorientation, resulting in the change of macroscopical magnetic properties and magnetostriction. The hyperfine field decreases, but the isomer shifts increases with Al concentration increasing and the quadruple splitting QS shows a weak concentration dependence.     

Magnetic splitting of valence states in ferromagnetic and antiferromagnetic lanthanide metals

The magnetic splitting of Delta(2) valence states in the heavy lanthanide metals Gd, Tb, Dy, and Ho was studied in epitaxial films by angle-resolved photoemission, revealing an essentially Stoner-like temperature dependence in all cases. It scales linearly with the 4f spin moment, even in the case of the helical antiferromagnet Ho. Such a behavior can be explained by a substantial localization of the corresponding wave function in the c direction. The helical magnetic structure was confirmed for the thin Ho films by in situ resonant magnetic x-ray diffraction.     

Properties magnetiques des composes terres rares-plomb TPb3(T = Pr,Nd, Sm,Tb, Dy,Ho)

We have studied the low field susceptibility of TPb₃ compounds (T = Pr, Nd, Sm, Tb, Dy, Ho) between 3 and 300 K. All these compounds except SmPb₃ follow a Curie-Weiss law with a paramagnetic moment close to the free ion value. The compounds with Sm, Tb, Dy and Ho order antiferromagnetically.The magnetization of the three last compounds has been studied in static magnetic fields up to 85 koe.     

Magnetic phase diagrams of R2RhIn8 (R = Tb, Dy, Ho, Er and Tm) compounds

We have grown and characterized single crystals of R(2)RhIn(8) (R=Tb, Dy, Ho, Er and Tm) compounds crystallizing in the tetragonal Ho(2)CoGa(8)-type crystal structure. Their magnetic properties were studied by specific heat and magnetization measurements. All the investigated compounds order antiferromagnetically with Néel temperatures of 43.6, 25.1, 10.9, 3.8 and 4.1 K, respectively. Magnetic phase diagrams were constructed.     

160Tb β-衰变纲图研究

对由160Tb的β-衰变而产生的γ射线利用GeLi和HpGe探测器进行了单谱和γ γ符合谱的测量.根据单谱和γ-γ符合谱的测量结果给出了160Tb的β-衰变纲图.并用绝热对称转动模型对160Dy中转动带与振动带的耦合参数Zγ值进行了计算,得出从振动带到转动带的γ跃迁几率B(E2)值之比不能通过唯一的Zγ值来描述.Tb/β-衰变;衰变纲图;带耦合参数 The γtransitions in 160Tb decay has been studied by γ ray spectroscopy and γ γ coincidence measurements with high efficiency Ge(Li) and HpGe detectors. The β- decay scheme of 160Tb was proposed according to the results of γ ray spectroscopy and γ γ coincidence measurement. The band mixing parameter Zγ for 160Dy is determined and it is observed that the measured γ ray branching ratios do not lead to a unique value of Zγ for 160 Dy.