共查询到20条相似文献,搜索用时 46 毫秒
1.
This paper studies the process of mutual neutralization of Si^+ and H^- ions in slow collisions within the multichannel Landau-Zener model. All important ionic-covalent couplings in this collision system are included in the collision dynamics. The cross sections for population of specific final states of product Si atom are calculated in the CM energy range 0.05 e∨/u-5 ke∨/u. Both singlet and triplet states are considered. At collision energies below -10 e∨/u, the most populated singlet state is Si(3p4p, ^1S0), while for energies above -150e∨/u it is the Si(3p, 4p, ^1P1) state. In the case of triplet states, the mixed 3p4p(^3S1 +^3P0) states are the most populated in the entire collision energy range investigated. The total cross section exhibits a broad maximum around 200 300e∨/u and for ECM ≤ 10e∨/u it monotonically increases with decreasing the collision energy, reaching a value of 8 × 10^-13 cm^2 at ECM = 0.05 e∨/u. The ion-pair formation process in Si(3p^2 ^3PJ)+H(1s) collisions has also been considered and its cross section in the considered energy range is very small (smaller than 10^-20 cm^2 in the energy region below 1 ke∨/u). 相似文献
2.
This paper reports that the m-plane GaN layer is grown on (200)-plane LiAlO2 substrate by metal-organic chemical wpour deposition (MOCVD) method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer's thickness. The high transmittance (80%), sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate. 相似文献
3.
Temperature dependence of biaxial strain and its influence on phonon and band gap of GaN thin film 下载免费PDF全文
Hexagonal GaN epilayer grown on sapphire substrate by metal organic
chemical vapour deposition (MOCVD) is studied using Raman scattering
and photoluminescence in a temperature range from 100\,K to 873\,K.
The model of strain (stress) induced by the different lattice
parameters and thermal coefficients of epilayer and substrate as a
function of temperature is set up. The frequency and the linewidth of
$E_2^{\rm high}$ mode in a GaN layer are modelled by a theory with
considering the thermal expansion of the lattice, a symmetric decay
of the optical phonons, and the strain (stress) in the layer. The
temperature-dependent energy shift of free exciton A is determined by
using Varshni empirical relation, and the effect of strain (stress)
is also investigated. We find that the strain in the film leads to a
decreasing shift of the phonon frequency and an about
10meV-increasing shift of the energy in a temperature range from
100\,K to 823\,K. 相似文献
4.
This paper studies full vibrational spectra {Ev} and molecular dissociation energies De by using conventional least-squares (LS) fitting and an algebraic method (AM) proposed recently for 10 diatomic electronic states of ^7Li2, Na2, NaK and NaLi molecules based on some known experimental vibrational energies in a subset [Ev^expt] respectively. Studies show that: (1) although both the full AM spectrum {Ev^AM} and the LS spectrum {Ev^LS} can reproduce the known experimental energies in [Ev^expt], the {EAM} is superior to the {Ev^LS} in that the high-lying AM vibrational energies which may not be available experimentally have better or much better accuracy than those LS counterparts in {Ev^LS}, and so is the AM dissociation energy De^AM; (2) the main source of the errors in the data obtained by using the LS fitting is that the fitting which is just a pure mathematical process does not use any physical criteria that must be satisfied by the full vibrational spectrum, while the AM method does. This study suggests that when fitting or solving a physical equation using a set of source data, it is important not only to apply a proper mathematical tool, but also to use correct physical criteria which measure the physical properties of the data, kick out those data having bigger errors, and impose conditional convergence on the numerical process. 相似文献
5.
Electron tunnelling phase time and dwell time through an associated delta potential barrier 下载免费PDF全文
The electron tunnelling phase time τP and dwell time τD through an associated delta potential barrier U(x) = ξδ(x) are calculated and both are in the order of 10^-17~10^-16s. The results show that the dependence of the phase time on the delta barrier parameter ξ can be described by the characteristic length lc = h^2/meξ and the characteristic energy Ec=meξ^2/h^2 of the delta barrier, where me is the electron mass, lc and Ec are assumed to be the effective width and height of the delta barrier with lcEc=ξ, respectively. It is found that TD reaches its maximum and τD = τp as the energy of the tunnelling electron is equal to Ec/2, i.e. as lc =λDB, λDB is de Broglie wave length of the electron. 相似文献
6.
为了研究氢化非晶硅薄膜的稳定性,我们设计了一个在原子氢气氛中热退火的同时进行光诱导退火的实验(TLAH)。实验装置是由传统的微波电子回旋共振化学气相沉积系统改造而成为热丝辅助微波电子回旋共振化学气相沉积系统。为了对这一退火方法进行比较,对样品还进行了热退火、热退火同时进行光诱导退火。同时,为了定量地分析光电导衰退,我们假设光电导衰退遵循扩展指数规律:1/σph=1/σs-(1/σs-1/σ0)exp[-(t/τ)β],这里扩展指数参数β 和时间常数 τ 可从与 lnt 的线性关系中截距和斜率得到, 式中光电导饱和值σs可以通过在对数坐标系中表示的光电导和光照时间关系进行高斯拟合得到。实验结果显示:TLAH 方法可以提高氢化非晶硅薄膜的稳定性、改善其微结构和光电特性,同时还发现,光学带隙明显减小、荧光光谱显著地朝着低能方向移动。 相似文献
7.
本文考虑带有黑洞视界和宇宙视界的Kiselev时空.研究以黑洞视界和宇宙视界为边界的系统的热力学性质.统一地给出了两个系统的热力学第一定律;在黑洞视界半径远小于宇宙视界半径的情况下,近似地计算了通过宇宙视界和黑洞视界的热能.然后,探讨Kiselev时空的物质吸积特性.在吸积能量密度正比于背景能量密度的条件下给出黑洞的吸积率,讨论了黑洞吸积率与暗能量态方程参数的关系. 相似文献
8.
Low-temperature heat capacities and standard molar enthalpy of formation of 4-(2-aminoethyl)-phenol (C8H11NO) 下载免费PDF全文
This paper reports that low-temperature heat capacities of 4-(2-aminoethyl)-phenol (C8H11NO) are measured by a precision automated adiabatic calorimeter over the temperature range from 78 to 400 K. A polynomial equation of heat capacities as a function of the temperature was fitted by the least square method. Based on the fitted polynomial, the smoothed heat capacities and thermodynamic functions of the compound relative to the standard reference temperature 298.15K were calculated and tabulated at the interval of 5K. The energy equivalent, εcalor, of the oxygen-bomb combustion calorimeter has been determined from 0.68g of NIST 39i benzoic acid to be εcalor=(14674.69±17.49)J·K^-1. The constant-volume energy of combustion of the compound at T=298.15 K was measured by a precision oxygen-bomb combustion calorimeter to be ΔcU=-(32374.25±12.93)J·g^-1. The standard molar enthalpy of combustion for the compound was calculated to be ΔcHm = -(4445.47 ± 1.77) kJ·mol^-1 according to the definition of enthalpy of combustion and other thermodynamic principles. Finally, the standard molar enthalpy of formation of the compound was derived to be ΔfHm(C8H11NO, s)=-(274.68 ±2.06) kJ·mol^-1, in accordance with Hess law. 相似文献
9.
A new evaluation of the hadronic vacuum polarization contribution to the muon magnetic moment is presented. We take into account the reanalysis of the low-energy e
+
e
-annihilation cross section into hadrons by the CMD-2 Collaboration. The agreement between e
+
e
-and
spectral functions in the
channel is found to be much improved. Nevertheless, significant discrepancies remain in the center-of-mass energy range between 0.85 and
, so that we refrain from averaging the two data sets. The values found for the lowest-order hadronic vacuum polarization contributions are
where the errors have been separated according to their sources: experimental, missing radiative corrections in e
+
e
-data, and isospin breaking. The corresponding Standard Model predictions for the muon magnetic anomaly read
where the errors account for the hadronic, light-by-light (LBL) scattering and electroweak contributions. The deviations from the measurement at BNL are found to be
(1.9
) and
(0.7
) for the e
+
e
-- and
-based estimates, respectively, where the second error is from the LBL contribution and the third one from the BNL measurement.Received: 7 September 2003, Published online: 30 October 2003 相似文献
10.
The structures and properties of Wn (n=2--14) clusters were
studied by using the density functional theory (DFT) at LSDA level. The
most stable structures of Wn (n=2--14) clusters with global
minimum were determined. The average binding energy (Eb), the
first and second difference of total energy (\itδ E,
\itδ2E), the vertical detachment energy (VDE), and the
HOMO-LUMO gap versus the size were also discussed. The abrupt
decrease of VDE and HOMO-LUMO gap at size n=8 and 10 implied
that tungsten clusters of W8 and W10 appeared to have
metallic features. These changes were also accompanied by the
delocalization of electron charge density and the strong
hybridization between 5d and 6s orbits in W8 and W_10
clusters. Our results are in good agreement with the available
experimental data. 相似文献
11.
We report the constraints of $H_0$ obtained from Wilkinson Microwave Anisotropy Probe (WMAP) 9-year data combined with the latest baryonic acoustic oscillations (BAO) measurements. We use the BAO measurements from 6dF Galaxy Survey (6dFGS), the SDSS DR7 main galaxies sample (MGS), the BOSS DR12 galaxies, and the eBOSS DR14 quasars. Adding the recent BAO measurements to the cosmic microwave background (CMB) data from WMAP, we constrain cosmological parameters $\Omega_m=0.298\pm0.005$, $H_0=68.36^{+0.53}_{-0.52} {\rm km}\cdot {\rm s}^{-1}\cdot {\rm Mpc}^{-1}$, $\sigma_8=0.8170^{+0.0159}_{-0.0175}$ in a spatially flat $\Lambda$ cold dark matter ($\Lambda$CDM) model, and $\Omega_m=0.302\pm0.008$, $H_0=67.63\pm1.30 {\rm km}\cdot{\rm s}^{-1}\cdot {\rm Mpc}^{-1}$, $\sigma_8=0.7988^{+0.0345}_{-0.0338}$ in a spatially flat $w$CDM model, respectively. Our measured $H_0$ results prefer a value lower than 70 ${\rm km}\cdot {\rm s}^{-1}\cdot{\rm Mpc}^{-1}$, consistent with the recent data on CMB constraints from Planck (2018), but in $3.1$ and $3.5\sigma$ tension with local measurements of SH0ES (2018) in $\Lambda$CDM and $w$CDM framework, respectively. Our results indicate that there is a systematic tension on the Hubble constant between SH0ES and the combination of CMB and BAO datasets. 相似文献
12.
State-to-state dynamics of reactions H+DH'(v=0,j=0)→HH'(v',j')+D/HD(v',j')+H'with time-dependent quantum wave packet method 下载免费PDF全文
《中国物理 B》2021,30(7):73102-073102
State-to-state time-dependent quantum dynamics calculations have been carried out to study H+DH'→HH'+D/HD+H' reactions on BKMP2 surface.The total integral cross sections of both reactions are in good agreement with earlier theoretical and experimental results,moreover the rotational state-resolved reaction cross sections of H+DH'→HH‘+D at collision energy Ec=0.5 eV are closer to the experimental values than the ones calculated by Chao et al [J.Chem.Phys.117 8341(2002)],which proves the higher precision of the quantum calculation in this work.In addition,the state-to-state dynamics of H+DH'→ HD'+H reaction channel have been discussed in detail,and the differences of the micro-mechanism of the two reaction channels have been revealed and analyzed clearly. 相似文献
13.
Anomalous magnetic properties of an iron film system deposited on fracture surfaces of α-Al2O3 ceramics 下载免费PDF全文
An iron film percolation system is fabricated by vapour-phase deposition on fracture surfaces of α-Al2O3 ceramics. The zero-field-cooled (ZFC) and field-cooled (FC) magnetization measurement reveals that the magnetic phase of the film samples evolve from a high-temperature ferromagnetic state to a low-temperature spin-glass-like state, which is also demonstrated by the temperature-dependent ac susceptibility of the iron films. The temperature dependence of the exchange bias field He of the iron film exhibits a minimum peak around the temperature T=5 K, which is independent of the magnitude of the cooling field Hcf. However, for T 〉 10K, (1) He is always negative when Hcf=2kOe and (2) for Hcf= 20 kOe (1Oe≈80 A/m), He changes from negative to positive values as T increases. Our experimental results show that the anomalous hysteresis properties mainly result from the oxide surfaces of the films with spin-glass-like phase. 相似文献
14.
Effect of annealing on photoluminescence and microstructures of InGaN/GaN multi-quantum well with Mg-doped p-type GaN 总被引:3,自引:0,他引:3 下载免费PDF全文
InGaN/GaN multi-quantum well structure with Mg-doped p-type GaN was grown by low-pressure metalorganic vapour phase epitaxy. After rapid-thermal-annealing at 700 and 900${^\circ}$C, both the red-shift and the blue-shift of the photoluminescence (PL) peak, the decreased and the enhancement of the PL intensity were observed. The transmission electron microscopic images showed that InGaN multi-quantum-dots-like (MQD-like) structures with dimensions less than 5$\tm$10nm were formed in InGaN wells. The changes of PL spectra could be tentatively attributed to the competition between the red-shift mechanism of the quantum-confined Stark effect and the blue-shift mechanism of the quantum size effect due to MQD-like structures. 相似文献
15.
This paper reports that a novel type of suspended ZnO nanowire field-effect
transistors (FETs) were successfully fabricated using a
photolithography process, and their electrical properties were
characterized by I--V measurements. Single-crystalline ZnO
nanowires were synthesized by a hydrothermal method, they were used
as a suspended ZnO nanowire channel of back-gate field-effect
transistors (FET). The fabricated suspended nanowire FETs showed a
p-channel depletion mode, exhibited high on--off current ratio of
~105. When VDS=2.5 V, the peak transconductances
of the suspended FETs were 0.396 μS, the oxide capacitance was
found to be 1.547 fF, the pinch-off voltage VTH was about
0.6 V, the electron mobility was on average 50.17 cm2/Vs. The
resistivity of the ZnO nanowire channel was estimated to be
0.96× 102Ω cm at VGS = 0 V. These
characteristics revealed that the suspended nanowire FET fabricated
by the photolithography process had excellent performance. Better
contacts between the ZnO nanowire and metal electrodes could be
improved through annealing and metal deposition using a focused ion
beam. 相似文献
16.
Density functional theory (DFT) (B3P86) of Gaussian 03 has been used to optimize the structure of the Cr2 molecule, a transition metal element molecule. The result shows that the ground state for the Cr2 molecule is a 13- multiple state, indicating that there exists a spin polarization effect in the Cr2 molecule. Meanwhile, we have not found any spin pollution because the wave function of the ground state does not mingle with wave functions of higher-energy states. So the ground state for Cr2 molecule being a 13-multiple state is indicative of spin polarization effect of the Cr2 molecule among transition metal elements, that is, there are 12 parallel spin electrons in the Cr2 molecule. The number of non-conjugated electrons is greatest. These electrons occupy different spatial orbitals so that the energy of the Cr2 molecule is minimized. It can be concluded that the effect of parallel spin in the Cr2 molecule is larger than the effect of the conjugated molecule, which is obviously related to the effect of electron d delocalization. In addition, the Murrell Sorbie potential functions with the parameters for the ground state and other states of the Cr2 molecule are derived. The dissociation energy De for the ground state of the Cr2 molecule is 0.1034eV, equilibrium bond length Re is 0.3396 nm, and vibration frequency we is 73.81cm^-1. Its force constants f2, f3 and f4 are 0.0835, -0.2831 and 0.3535 aJ. nm^-4 respectively. The other spectroscopic data for the ground state of the Cr2 molecule ωeχe, Be and αe are 1.2105, 0.0562 and 7.2938 x 10^-4cm^-1 respectively. 相似文献
17.
The Ni/4H-SiC Schottky barrier diodes (SBDs) and transfer length
method (TLM) test patterns of Ni/4H-SiC Ohmic contacts were
fabricated, and irradiated with 1~MeV electrons up to a dose of
3.43× 1014~e/cm-2. After radiation, the forward
currents of the SBDs at 2~V decreased by about 50%, and the
reverse currents at -200~V increased by less than 30%. Schottky
barrier height (φ B ) of the Ni/4H-SiC SBD increased
from 1.20~eV to 1.21~eV under 0~V irradiation bias, and decreased
from 1.25~eV to 1.19~eV under -30~V irradiation bias. The
degradation of φ B could be explained by the variation
of interface states of Schottky contacts. The on-state resistance
(Rs) and the reverse current increased with the dose, which
can be ascribed to the radiation defects in bulk material. The
specific contact resistance (\rhoc) of the Ni/SiC Ohmic
contact increased from 5.11× 105~Ωega.cm2 to 2.97× 10-4~Ωega.cm2. 相似文献
18.
This paper reports that 9nm zincblende CrAs is grown by molecular-beam epitaxy on InAs buffer layer. The zb-CrAs shows ferromagnetism at room temperature and the total magnetic moment 3.09 ±0.15μB per CrAs unit. The temperature dependence of zb-CrAs resistance R shows metallic behaviour. 相似文献
19.
The chirality-asymmetry macroscopic force mediated by light
pseudoscalar particles between α -quartz and some achiral
matter is studied. If this force between achiral source mass and
α -quartz with some chirality is attractive, it will become
repulsive when the chirality of the α -quartz crystal is
changed. According to the tested limits of the coupling constant
gs gp /\hbar c< 1.5× 10-24 at the
Compton wavelength λ = 10-3 m, the force (F) between
a 0.08× 0.08× 0.002 m3 block of α -quartz
and a 0.08× 0.08× 0.01 m3 copper block with a
separation being 0.5× 10-3 \mbox{m} in between, is
estimated from the published data at less than 4.64× 10-24 N, i.e. F < 4.64× 10-24 N. 相似文献
20.
Magnetic properties and magnetocaloric effects of
Tb6Co1.67Si3 have been investigated by magnetization
measurement. This compound is of a hexagonal
Ce$_{6}$Ni$_{2}$Si$_{3}$-type structure with a saturation
magnetization of 187\,emu/g at 5\,K and a reversible second-order
magnetic transition at Curie temperature $T_{\rm C} = 186$\,K. A
magnetic entropy change $\Delta S =
7$\,J\,$\cdot$\,kg$^{-1}$\,$\cdot$\,K$^{-1}$ is observed for a
magnetic field change from 0 to 5\,T. A large value of refrigerant
capacity (RC) is found to be 330\,J/kg for fields ranging from 0 to
5\,T. The large RC, the reversible magnetization around $T_{\rm C}$
and the easy fabrication make the Tb6Co1.67Si3
compound a suitable candidate for magnetic refrigerants in a
corresponding temperature range. 相似文献