Growth studies of m-GaN layers on LiAlO2 by MOCVD

This paper reports that the m-plane GaN layer is grown on （200）-plane LiAlO2 substrate by metal-organic chemical wpour deposition （MOCVD） method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer＇s thickness. The high transmittance （80%）, sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.     

Photoresponse of the In0.3Ga0.7N metal-insulator-semiconductor photodetectors

In0.3Ga0.7N metal-insulator-semiconductor （MIS） and metal-semiconductor （MS） surface barrier photodetectors have been fabricated. The In0.3Ga0.7N epilayers were grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The photoresponse and reverse current-voltage characteristics of the In0.3Ga0.7N MIS and MS photodetectors were measured. A best zero bias responsivity of 0.18 A/W at 450 nm is obtained for the In0.3Ga0.7N MIS photodetector with 10 nm Si3N4 insulator layer, which is more than ten times higher than the In0.3Ga0.7N MS photodetector. The reason is attributed to the decrease of the interface states and increase of surface barrier height by the inserted insulator. The influence of the thickness of the Si3N4 insulator layer on the photoresponsivity of the MIS photodetector is also discussed.     

高能质子辐射作用的分子机理——DNA空间结构微观损伤的Raman光谱特征

高能质子是空间辐射的重要类型。本文用激光Raman光谱技术,研究了高能质子(27.9 MeV)对水溶液中DNA辐射作用的分子机理。通过解析其特征Raman谱线,获得DNA空间结构微观损伤的以下信息:(1)维系双螺旋结构的碱基间氢键部分断裂;(2)4种碱基均被损伤,其中腺嘌呤环的破坏最重;(3)脱氧核糖发生了明显的变化;(4)骨架磷酸离子(PO_2~-)和磷酸二酯(PO_2)的损伤严重,并出现单、双链的断裂;(5)B型构象的数量显著减少。     

MOCVD生长InxGa1-Xn薄膜的表征

本文利用MOCVD方法在(0001)取向的蓝宝石衬底上实现了不同生工艺条件下的InxGa-xN薄膜的制备,并通过XRD、SEM、AFM等测量分析方法系统研究了生长工艺参数对InxGa1-xN薄膜的组分和性质的影响.InxGa1-xN薄膜的制备包括蓝宝石衬底表面上GaN缓冲层的生长以及缓冲层上InxGa1-xN薄膜的沉积两个过程.通过对所制备InxGa1-xN薄膜的XRD、SEM、AFM分析发现,调节生长温度和TMGa的流量可以有效控制InxGa1-xN薄膜中In的组分,并且随着生长温度的升高,InxGa1-xN薄膜的表面缺陷减少.     

星点板简易制造法

<正> 显微镜镜头像质检验用的星点板是显微镜生产厂必备的元件。目前国内除上海光学仪器研究所用喷涂塑料小球后镀铝的办法研制出较     

Molecular Mechanism of High Energy Proton Radiation——Raman Spectroscopic Character of Microcosmic Damage in the Space Structure of DNA

High energy proton is an important type of the space radiation. The paper investigates the radiatione ffect of high energy proton (27.9 MeV) on DNA aqueous solution in the field of the molecular mechanism. The following information about the microcosmic damage to the space structure of DNA was obtained: (ⅰ) breakage of a part of interbase hydrogen bonds which maintained double helical structure of DNA; (ⅱ) damage on four bases, in which the damage on adenine ring was the most serious; (ⅲ) obvious change of deoxyribose; (ⅳ) serious damage on backbone phosphate ion (PO_2~-) and phosphate diester (PO_2) and the occurrence of scissions of double-stranded and single-stranded DNAs; (ⅴ) obvious decrease in the amount of B-form conformation.     

AlN/Si(100)上CVD SiC薄膜的光致发光谱

本工作用化学气相淀积方法在AlN/Si(100)复合衬底上生长SiC薄膜.外延生长过程中,采用C4H4和SiH4作为反应气源,H2作为载气.样品的X-射线衍射谱和拉曼散射谱显示,所得到的外延层为六角对称的SiC薄膜.俄歇电子能谱及X-射线光电子能谱的测量结果表明,在外延膜中存在来自衬底的Al和N元素.样品的光致发光测量显示,所有的样品均可在室温下观察到位于3.03eV和3.17eV处的发光峰,这分别相应于4H-SiC能带中电子从导带到Al受主能级之间的辐射跃迁和电子从N施主能级到价带之间的辐射跃迁,从而表明所得的外延薄膜的多形体为4H-SiC.