High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy

We report the molecular beam epitaxy growth of 1.3 μm InAs/GaAs quantum-dot （QD） lasers with high characteristic temperature T0. The active region of the lasers consists of five-layer InAs QDs with p-type modulation doping. Devices with a stripe width of 4 μm and a cavity length of 1200 μm are fabricated and tested in the pulsed regime under different temperatures. It is found that T0 of the QD lasers is as high as 532 K in the temperature range from 10°C to 60°C. In addition, the aging test for the lasers under continuous wave operation at 100°C for 72 h shows almost no degradation, indicating the high crystal quality of the devices.     

High-performance InAs/GaAs quantum dot laser with dot layers grown at 425℃

We investigate InAs/GaAs quantum dot(QD) lasers grown by gas source molecular beam epitaxy with different growth temperatures for InAs dot layers.The same laser structures are grown,but the growth temperatures of InAs dot layers are set as 425 and 500 ℃,respectively.Ridge waveguide laser diodes are fabricated,and the characteristics of the QD lasers are systematically studied.The laser diodes with QDs grown at 425℃ show better performance,such as threshold current density,output power,internal quantum efficiency,and characteristic temperature,than those with QDs grown at 500 C.This finding is ascribed to the higher QD density and more uniform size distribution of QDs achieved at 425℃.     

Gain Measurement and Anomalous Decrease of Peak Gain at Long Wavelength for InAs/GaAs Quantum-Dot Lasers

Mode gain spectrum is measured by the Fourier series expansion method for InAs/GaAs quantum-dot （QD） lasers with seven stacks of QDs at different injection currents. Gain spectra with distinctive peaks are observed at the short and long wavelengths of about 1210nm and 1300nm. For a QD laser with the cavity length of 1060μm, the peak gain of the long wavelength first increases slowly or even decreases with the injection current as the peak gain of the short wavelength increases quickly, and finally increases quickly before approaching the saturated values as the injection current further increases.     

25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75℃

We report 25 Gb/s high-speed directly modulated ground-state operation of 1.3 μm In As/Ga As quantum dot(QD) lasers grown by molecular beam epitaxy. The active region of the lasers consists of eight layers of p-doped In As QDs with high uniformity and density. Ridge-waveguide lasers with a 3-μm-wide and 300-μm-long cavity show a low threshold current of 14.4 m A at 20°C and high temperature stability with a high characteristic temperature of 1208 K between 20°C and 70°C. Dynamic response measurements demonstrate that the laser has a 3 d B bandwidth of 7.7 GHz at 20°C and clearly opened eye diagrams even at high temperatures up to 75°C under a 25 Gb/s direct modulation rate.     

Continuous Wave Performance and Tunability of MBE Grown 2.1μm InGaAsSb/AlGaAsSb MQW lasers

InCaAsSb/AlGaAsSb multi quantum well ridge waveguide lasers at 2.1 μm wavelength are fabricated by using molecular beam epitaxy. Continuous wave performance and tunability of the lasers are evaluated in a wide temperature range extend to 80℃. Output power of the laser at 30℃ exceeds 30 m W/facet at driving current of 0.5 A, the characteristic temperature To is 89K in 0-50℃ range. No fast degradation is observed in accelerated aging test at 90℃ for those lasers with lower Al content in cladding layers. Temperature tunability of the lasers is 1.36 nm/K. Single-mode output with side mode suppression ratios greater than 20 dB is achieved in a certain driving current region; current tunability is 8 × 10^-3 nm/mA regardless of mode hopping.     

Single-mode and tunable VCSELs in the near- to mid-infrared

Single-mode, long-wavelength vertical-cavity surface-emitting lasers （VCSELs） in the near- to mid-infrared covering the wavelength range from 1.3 to 2.3 μm are presented. This wide spectral emission range opens applications in gas sensing and optical interconnects. All these lasers are monolithically grown in the InGaAlAs-InP material system utilizing a buried tunnel junction （BTJ） as current aperture. Fabricated with a novel high-speed design with reduced parasitics, bandwidths in excess of 10 GHz at 1.3 and 1.55 μm have been achieved. Therefore, the coarse wavelength division multiplexing （CWDM） wavelength range of 1.3 to 1.6 μm at 10 Gb/s can be accomplished with one technology. Error-free data-transmission at 10 Gb/s over a fiber link of 20 km is demonstrated. One-dimensional arrays have been fabricated with emission wavelengths addressable by current tuning. Micro-electro-mechanical system （MEMS） tunable devices provide an extended tuning range in excess of 50 nm with high spectral purity. All these devices feature continuous-wave （CW） operation with typical single-mode output powers exceeding 1 mW. The operation voltage is around 1 - 1.5 V and power consumption is as low as 10 - 20 mW. Furthermore, we have also developed VCSELs based on GaSb, targeting functionality of tunable diode laser spectroscopy （TDLS） applying a 1.84-μm VCSEL. at the wavelength range from 2.3 to 3.0 μm. The systems is shown by presenting a laser hygrometer     

Optimization of InAs/GaAs quantum-dot structures and application to 1.3-μm mode-locked laser diodes

The self-assembled growth of InAs/GaAs quantum dots by molecular beam epitaxy is conducted by optimizing several growth parameters, using a one-step interruption method after island formation. The dependence of photoluminescence on areal quantum-dot density is systematically investigated as a function of InAs deposition, growth temperature and arsenic pressure. The results of this investigation along with time-resolved photoluminescence measurements show that the com- bination of a growth temperature of 490℃, with a deposition rate of 0.02 ML/s, under an arsenic pressure of 1×10^-6 Torr （1 Torr = 1.33322×10^2 Pa）, provides the best compromise between high density and the photoluminescence of quantum dot structure, with a radiative lifetime of 780 ps. The applicability of this 5-layer quantum dot structure to high-repetition-rate pulsed lasers is demonstrated with the fabrication and characterization of a monolithic InAs/GaAs quantum-dot passively mode-locked laser operating at nearly 1300 nm. Picosecond pulse generation is achieved from a two-section laser, with a 19.7-GHz repetition rate.     

Electrical Property of Infrared-Sensitive InAs Solar Cells

InAs infrared-sensitive solar cells are fabricated by using the films grown by the liquid phase epitaxy technique. The film microstructures are characterized by x-ray diffraction and scanning electronic microscopy. The current-voltage characteristics of the solar cells in the dark and under AM1.5 illumination at 300 K and 77 K are discussed. The conversion efficiency of p-InAs/n-sub InAs cells decreases when the thickness of the p-type film changes from 1.7 μm to 3.5 μm, which is caused by the reduced effective photons near p？n junction. The p-InAs/n-InAs/n-sub InAs solar cell with the conversion efficiency of 7.43% in 1-2.5 μm under AM1.5 at 77 K is obtained. The short circuit current density increases dramatically with decreasing temperature due to the weakened effect of phonon scattering.     

Synchronization and Coherent Combining of Two Pulsed Fiber Ring Lasers Based on Direct Phase Modulation

We demonstrate a scalable architecture for coherent combining of pulsed fiber ring lasers based on mutual injection and direct phase modulation. By direct phase modulation in the common arm of two ring lasers, synchronous pulsed lasers can be generated and coherent combining of the two synchronous lasers is obtained. Two pulsed fiber ring lasers are coherently combined with 0.55μJ pulse energy and 10 μs pulse duration at a repetition rate of 27.5 kHz. Experimental results show that the two fiber ring lasers are phase locked with an invariable phase difference of π and have good temporal synchronization and spatial coherence. The combining efficiency of the two pulsed fiber laser reaches 90% and the fringe contrast is larger than 40%. Neither active phase control nor polarization control is used in our experiment and this method can be extended to combine more beams and higher repetition rate scaling up to higher power.     

Experimental and numerical investigation of mid-infrared laser in Pr~(3+)-doped chalcogenide fiber

We report on a chalcogenide glass fiber doped with Pr~(3+) that can be used for commercialized 1.5-μm and 2-μm laser excitations by emitting broadband 3 μm–5.5 μm fluorescence, which is extruded into a preform and then drawn into a step-index fiber. The spectroscopic properties of the fiber and glass are reported, and the mid-infrared fiber lasers are also numerically investigated. Cascade lasing is employed to increase the inversion population of the upper laser level. The particle swarm approach is applied to optimize the fiber laser parameters. The output power can reach 1.28 W at 4.89-μm wavelength, with a pump power of 5 W, excitation wavelength at 2.04 μm, Pr~(3+) ion concentration at 4.22 × 10~(25) ions/m~3,fiber length at 0.94 m, and fiber background loss at 3 dB/m.     

Phase noise characteristics of narrow-linewidth fiber laser and laser diode in unbalanced interferometers

The phase noises of two narrow-linewidth fiber laser and laser diode are measured by using unbalanced Michelson interferometers with various optical path differences (OPDs). The measured results indicate that the phase noises of the two lasers do not change linearly with the OPD over the range from 1 to 100 m. The laser diode exhibits phase noise levels higher than that of the fiber laser at OPDs longer than 10 m. However, the laser diode outperforms the fiber laser at OPDs shorter than 10 m. The results obtained can assess laser performance and determine the suitable laser for use in a particular application.     

Wavelength tunability of tandem optical parametric oscillator based on single PPMgOLN crystal

The theoretical analysis and experimental results of the wavelength tunability of a tandem optical parametric oscillator (TOPO) based on a single nonlinear crystal are presented.TOPO is a configuration wherein the signal laser is used as a pump laser to generate secondary optical parametric oscillator (OPO).The cascaded parametric interactions are achieved synchronously in a single-grating-period MgO doped periodically poled lithium niobate (PPMgOLN).Tunable multiple-wavelength mid-infrared (mid-IR) lasers are obtained by changing the temperature of the crystal.When the PPMgOLN crystal with a grating period of 31.2 μm is operated at 148 ℃,the dual OPOs generate an identical mid-IR laser of 2.83 μm.The secondary OPO transforms into an optical parametric amplifier,in which different frequency mixing from the signal laser results in the amplification of the idler laser in the first OPO.TOPO is a useful configuration for multiple laser output,broad tuning range,and high-efficiency mid-IR lasers.     

GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy

InAs/GaSb superlattice （SL） short wavelength infrared photoconduction detectors are grown by molecular beam epitaxy on GaAs（O01） semi-insulating substrates. An interfacal misfit mode AISb quantum dot layer and a thick GaSb layer are grown as buffer layers. The detectors containing a 200-period 2 ML/S ML InAs/GaSb SL active layer are fabricated with a pixel area of 800×800 μm^2 without using passivation or antirefleetion coatings. Corresponding to the 50% cutoff wavelengths of 2.05μm at 77K and 2.25 μm at 300 K, the peak detectivities of the detectors are 4 × 10^9 cm·Hz^1/2/W at 77K and 2 × 10^8 cm·Hz1/2/W at 300K, respectively.     

Quantum dot quantum cascade photodetector using a laser structure

We report on a quantum dot quantum cascade detector(QD-QCD), whose structure is derived from a QD cascade laser. In this structure, more ordered In As QD layers formed in the Stranski–Krastanow growth mode on a thin Ga As buffer layer are incorporated into the active region. This QD-QCD can operate up to room temperature with a peak detection wavelength of 5.8 μm. A responsivity of 3.1 mA/W at 160 K and a detectivity of 3.6 × 10~8 Jones at 77 K are obtained. The initial performance of the detector is promising, and, by further optimizing the growth of InA s QDs, integrated QD-quantum cascade laser/QCD applications are expected.     

Low-Threshold and High-Power Oxide-Confined 850 nm AlInGaAs Strained Quantum-Well Vertical-Cavity Surface-Emitting Lasers Based on Intra-Cavity Contacted Structure

The low-threshold and high-power oxide-confined 850 nm AlInGaAs strained quantum-well （QW） vertical-cavity surface-emitting lasers （VCSELs） based on the intra-cavity contacted structure are fabricated. The threshold current of 0.1 mA for a 10-μm oxide-aperture device is obtained with the threshold current density of 0.127kA/cm^2. For a 22-μm oxide-aperture device, the peak optical output power reaches to 14.6mW at the current injection of 25 mA under the room temperature and pulsed operation with a threshold current of 2mA, which corresponds to the threshold current density of 0.526kA/cm^2. The lasing wavelength is 855.4nm. The full wave at half maximum is 2.2 nm. The analysis of the characteristics and the fabrication of VCSELs are also described.     

Stable multi-wavelength thulium-doped fiber laser based on all-fiber Mach–Zehnder interferometer

We propose and experimentally demonstrate a multi-wavelength thulium-doped fiber（TDF） laser based on all-fiber Mach–Zehnder interferometer（MZI） at 1.9 mm. Here a segment of 4 m single-mode TDF is pumped by 1568 nm fiber laser for 2 mm band optical gain. The MZI includes two cascaded 3 d B coupler. A segment of 3.5 m long un-pumped polarization-maintaining TDF and polarization controller（PC） are joined in the ring cavity to suppress the mode competition. Multi-wavelength lasers at 1.9 mm with wavelength number from one to four are obtained by adjusting the PC and the stability of output power of multi-wavelength fiber laser is analyzed.     

Anomalous temperature dependence of photoluminescence spectra from InAs/GaAs quantum dots grown by formation–dissolution–regrowth method

Two kinds of InAs/GaAs quantum dot(QD) structures are grown by molecular beam epitaxy in formation–dissolution–regrowth method with different in-situ annealing and regrowth processes. The densities and sizes of quantum dots are different for the two samples. The variation tendencies of PL peak energy, integrated intensity, and full width at half maximum versus temperature for the two samples are analyzed, respectively. We find the anomalous temperature dependence of the InAs/GaAs quantum dots and compare it with other previous reports. We propose a new energy band model to explain the phenomenon. We obtain the activation energy of the carrier through the linear fitting of the Arrhenius curve in a high temperature range. It is found that the Ga As barrier layer is the major quenching channel if there is no defect in the material. Otherwise, the defects become the major quenching channel when some defects exist around the QDs.     

A method to obtain ground state electroluminescence from 1.3μm emitting InAs/GaAs quantum dots grown by molecular beam epitaxy

1.3μm emitting InAs/GaAs quantum dots(QDs) have been grown by molecular beam epitaxy and QD light emitting diodes(LEDs) have been fabricated.In the electroluminescence spectra of QD LEDs,two clear peaks corresponding to the ground state emission and the excited state emission are observed.It was found that the ground state emission could be achieved by increasing the number of QDs contained in the active region because of the state filling effect.This work demonstrates a way to control and tune the emitting wavelength of QD LEDs and lasers.     

Laser Resistance of Ta2O5/SiO2 and ZrO2/SiO2 Optical Coatings under 2 9m Femtosecond Pulsed Irradiation

Ta2O5/SiO2 and ZrO2/SiO2 high reflecting （HR） coatings are prepared by ion beam sputtering and electron beam evaporation, respectively. The laser-induced damage thresholds （LIDTs） of these samples are investigated with 2μm femtosecond pulse lasers （80fs, 1kHz）. It is found that the Ta2O5/SiO2 HR coating has a higher capability of laser damage resistance than the ZrO2/SiO2 HR coating in the 2μm femtosecond regime. The scanning electron microscope results show that the damage sites of the ZrO2//SiO2 FIR coating have a relatively porous structure, the loose structure of coatings will provide more sites for water molecules, and the LIDTs of HR coatings will be reduced as a result of the strong water absorption at the wavelength of 2 μm.     

Single-mode and tunable VCSELs in the near- to mid-infraredInvited Paper

Single-mode, long-wavelength vertical-cavity surface-emitting lasers (VCSELs) in the near- to mid-infrared covering the wavelength range from 1.3 to 2.3μm are presented. This wide spectral emission range opens applications in gas sensing and optical interconnects. All these lasers are monolithically grown in the InGaA1As-InP material system utilizing a buried tunnel junction (BTJ) as current aperture. Fabricated with a novel high-speed design with reduced parasitics, bandwidths in excess of 10 GHz at 1.3 and 1.55 μm have been achieved. Therefore, the coarse wavelength division multiplexing (CWDM) wavelength range of 1.3 to 1.6 μm at 10 Gb/s can be accomplished with one technology. Error-free data-transmission at 10 Gb/s over a fiber link of 20 km is demonstrated. One-dimensional arrays have been fabricated with emission wavelengths addressable by current tuning. Micro-electro-mechanical system (MEMS) tunable devices provide an extended tuning range in excess of 50 nm with high spectral purity. All these devices feature continuous-wave (CW) operation with typical single-mode output powers exceeding 1 mW. The operation voltage is around 1 - 1.5 V and power consumption is as low as 10 - 20 mW. Furthermore, we have also developed VCSELs based on GaSb, targeting at the wavelength range from 2.3 to 3.0 μm. The functionality of tunable diode laser spectroscopy (TDLS) systems is shown by presenting a laser hygrometer applying a 1.84-μm VCSEL.