Electronic band structure of a type-II ’W’ quantum well calculated by an eight-band k·p model

In this paper, we present an investigation of type-II 'W' quantum wells for the InAs/Ga_1-xIn_xSb/AlSb family, where 'W' denotes the conduction profile of the material. We focus our attention on using the eight-band k?p model to calculate the band structures within the framework of finite element method. For the sake of clarity, the simulation in this paper is simplified and based on only one period---AlSb/InAs/Ga_1-xIn_xSb/InAs/AlSb. The obtained numerical results include the energy levels and wavefunctions of carriers. We discuss the variations of the electronic properties by changing several important parameters, such as the thickness of either InAs or Ga_1-xIn_xSb layer and the alloy composition in Ga_1-xIn_xSb separately. In the last part, in order to compare the eight-band k?p model, we recalculate the conduction bands of the 'W' structure using the one-band k?p model and then discuss the difference between the two results, showing that conduction bands are strongly coupled with valence bands in the narrow band gap structure. The in-plane energy dispersions, which illustrate the suppression of the Auger recombination process, are also obtained.     

A 10Gb/s Directly-Modulated 1.3μm InAs/GaAs Quantum-Dot Laser

We demonstrate 10 Gb/s directly-modulated 1.3 μm InAs quantum-dot （QD） lasers grown on GaAs substrates by molecular beam epitaxy. The active region of the QD lasers consists of five-stacked InAs QD layers. Ridge-waveguide lasers with a ridge width of 4 μm and a cavity length of 600 μm are fabricated with standard lithography and wet etching techniques. It is found that the lasers emit at 1293 nm with a very low threshold current of 5 mA at room temperature. Furthermore, clear eye-opening patterns under 10 Gb/s modulation rate at temperatures of up to 50oC are achieved by the QD lasers. The results presented here have important implications for realizing low-cost, low-power-consumption, and high-speed light sources for next-generation communication systems.     

Impact of symmetrized and Burt—Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots

<正>We present a systematic investigation of calculating quantum dots(QDs) energy levels using the finite element method in the frame of the eight-band k·p method.Numerical results including piezoelectricity,electron and hole levels,as well as wave functions are achieved.In the calculation of energy levels,we do observe spurious solutions(SSs) no matter Burt-Foreman or symmetrized Hamiltonians are used.Different theories are used to analyse the SSs,we find that the ellipticity theory can give a better explanation for the origin of SSs and symmetrized Hamiltonian is easier to lead to SSs.The energy levels simulated with the two Hamiltonians are compared to each other after eliminating SSs,different Hamiltonians cause a larger difference on electron energy levels than that on hole energy levels and this difference decreases with the increase of QD size.     

Numerical study of strained InGaAs quantum well lasers emitting at 2.33 μm using the eight-band model

We investigate the band structure of a compressively strained In(Ga)As/In 0.53 Ga 0.47 As quantum well (QW) on an InP substrate using the eight-band k · p theory.Aiming at the emission wavelength around 2.33 μm,we discuss the influences of temperature,strain and well width on the band structure and on the emission wavelength of the QW.The wavelength increases with the increase of temperature,strain and well width.Furthermore,we design an InAs /In 0.53 Ga 0.47 As QW with a well width of 4.1 nm emitting at 2.33 μm by optimizing the strain and the well width.     

High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy

We report the molecular beam epitaxy growth of 1.3 μm InAs/GaAs quantum-dot （QD） lasers with high characteristic temperature T0. The active region of the lasers consists of five-layer InAs QDs with p-type modulation doping. Devices with a stripe width of 4 μm and a cavity length of 1200 μm are fabricated and tested in the pulsed regime under different temperatures. It is found that T0 of the QD lasers is as high as 532 K in the temperature range from 10°C to 60°C. In addition, the aging test for the lasers under continuous wave operation at 100°C for 72 h shows almost no degradation, indicating the high crystal quality of the devices.