Electrical Property of Infrared-Sensitive InAs Solar Cells

InAs infrared-sensitive solar cells are fabricated by using the films grown by the liquid phase epitaxy technique. The film microstructures are characterized by x-ray diffraction and scanning electronic microscopy. The current-voltage characteristics of the solar cells in the dark and under AM1.5 illumination at 300 K and 77 K are discussed. The conversion efficiency of p-InAs/n-sub InAs cells decreases when the thickness of the p-type film changes from 1.7 μm to 3.5 μm, which is caused by the reduced effective photons near p？n junction. The p-InAs/n-InAs/n-sub InAs solar cell with the conversion efficiency of 7.43% in 1-2.5 μm under AM1.5 at 77 K is obtained. The short circuit current density increases dramatically with decreasing temperature due to the weakened effect of phonon scattering.     

Ab Initio Study of Structural and Electronic Properties of Sodium Bromide

The structural and electronic properties of sodium bromide （NaBr） are investigated by the density functional theory （DFT） within the generalized gradient approximation （GGA） for the exchange and correlation energy. The equilibrium lattice constant, bulk modulus and its pressure derivative are obtained by fitting the calculated total energy to the third-order Birch-Murnaghan equation of state. The band structure along the higher symmetry axes in the Brillouin zone, the density of states （DOS） and the partial density of states （PDOS） are presented. The results have been discussed and compared with the available experimental and theoretical data.     

Temperature dependence of photoluminescence property in BaIn2O4

The temperature-dependent photoluminescence(PL) spectra of BaIn2O4,prepared by coprecipitation,are measured and discussed.Aside from the reported 3.02-eV violet emission,the 1.81-eV yellow emission involved with oxygen vacancy is also observed at room temperature wherein the deep donor level is at 1.2 eV.With the temperature increasing,the peak energies for both emissions show a red shift.Moreover,the yellow emission intensity decreases while the violet emission intensity increases.The temperature dependence of the yellow emission intensity fits very well into the one-step quenching process equation,indicating a fitted activation energy at 19.2 meV.     

以胶体粒子为模板制备核壳纳米复合粒子*

核壳纳米复合粒子具有许多不同于单组分胶体粒子的独特的光、电、磁、催化等物理与化学性质,是构筑新型功能复合材料的重要组元,在光子带隙材料、微波吸收材料、电磁流变液、催化剂和生物等领域有重要应用.本文从控制核壳复合粒子的微观结构及壳层均匀性与厚度的角度,详细评述了目前以胶体粒子为模板制备粒径从纳米到微米尺度的核壳复合粒子的方法.指出利用胶体粒子模板表面与壳层物质或其前驱物间的特殊相互作用(包括静电和化学相互作用),是完善现有制备方法和发展新方法来制备具有设定组成、结构和性能的核壳复合粒子的关键,同时也是将来的粒子表面纳米工程和获取有序的、先进纳米复合材料的主要方向。