SrBi2Ta2O9/Bi4Ti3O12复合铁电薄膜的制备与特性研究

采用溶胶凝胶工艺在p-Si衬底上制备了SrBi₂Ta₂O₉/Bi₄Ti₃O₁₂复合铁电薄膜. 研究了SrBi₂Ta₂O₉/Bi₄Ti₃O₁₂复合薄膜的微观结构与生长行为、铁电性能和疲劳特性. 研究表明: Si衬底Bi₄Ti< 关键词： 2Ta₂O₉')" href="#">SrBi₂Ta₂O₉ 4Ti₃O₁₂')" href="#">Bi₄Ti₃O₁₂ 复合铁电薄膜 溶胶凝胶工艺     

La掺杂SrBi4Ti4O15铁电材料性能研究

按x=0.00，0.10，0.25，0.50，0.75和1.00，采用固相烧结工艺，制备了不同La掺杂量的SrBi_4-xLa_xTi₄O₁₅的陶瓷样品. 用x射线衍射对其微结构进行了分析，并测量了铁电、介电性能.结果发现，La掺杂未改变SrBi₄Ti ₄O₁₅的晶体结构.随掺杂量的增加，样品的矫顽场(E_c)下降，剩余极化(2P_{关键词： 4-x}La_xTi₄O₁₅')" href="#">SrBi_4-xLa_xTi₄O₁₅ La掺杂 铁电性能 相变温度 弛豫铁电     

Ag/Bi4Ti3O12栅n沟道铁电场效应晶体管制备及存储特性

在溶胶-凝胶工艺获得高质量Bi₄Ti₃O₁₂薄膜的基础上 ，制备了Ag/Bi₄Ti₃O₁₂栅n沟道铁电场效应晶体管. 研 究了Si基Bi₄Ti₃O₁₂薄膜的生长特性及其对铁电薄膜/ 硅的界面状态和铁电场效应晶体管存储特性的影响. 研究表明，在合理的工艺条件下可以获 得具有较高c-轴择优取向的纯钙钛矿相Si基Bi₄Ti₃O₁₂ 铁电薄膜并有利于改善Bi₄Ti₃O₁₂/Si之间的界面特性; 顺时针回滞的C-V特性曲线和C-T曲线表明Ag/Bi₄Ti₃O_{12栅n沟道铁电场效应晶体管具有极化存储效应和一定的极化电荷保持能力; 器件的转移(I< sub>sd}-V_G)特性曲线显示Ag/Bi₄Ti₃O_{12栅n沟道铁电场效应晶体管具有明显的栅极化调制效应. 关键词： 铁电场效应晶体管 4}Ti₃O₁₂')" href="#">Bi₄Ti₃O₁₂ 存储 特性 溶胶-凝胶工艺     

La掺杂诱发层状钙钛矿型铁电体弛豫性相变的介电研究

制备了La掺杂层状钙钛矿铁电体材料SrBi₄Ti₄O₁₅, Sr₂Bi₄Ti₅O₁₈以及共生结构Bi₄Ti₃O₁₂-SrBi₄Ti₄O₁₅，通过研究样品的变温介电特性发现，SrBi_4-xLa_{x 关键词： 弛豫性相变 微畴-宏畴 层状钙钛矿 介电性能}     

Mo掺杂SrBi4Ti4O15陶瓷的铁电介电性能

用传统的固相烧结工艺，制备了钼掺杂铁电陶瓷样品SrBi₄Ti₄O₁₅(SBTi)铁电陶瓷SrBi_4-2x/3Ti_4-xMo_xO₁₅(x=0.00，0.003，0.012，0.03，0.06，0.09).X射线衍射的结果表明，样品均为单一的层状钙钛矿结构相，Mo掺杂未改变SBTi的晶体结构.通过扫描电子显微镜观测发现，样品晶粒为片状，随掺杂量的增加，晶粒逐 关键词： 4Ti₄O₁₅')" href="#">SrBi₄Ti₄O₁₅ Mo掺杂 剩余极化 居里温度     

CaCu3Ti4O12陶瓷的介电特性与弛豫机理

本文采用Novocontrol宽频介电谱仪在-100 ℃–100 ℃温 度范围内、0.1 Hz–10 MHz频率范围内测量了表面层打磨前 后CaCu₃Ti₄O₁₂陶瓷的介电特性, 分析了CaCu₃Ti₄O₁₂陶瓷的介电弛豫机理. 首先, 基于对宏观“壳-心”结构的定量分析, 排除了巨介电常数起源于表面层效应的可能性; 其次, 基于经典Maxwell-Wagner夹层极化及其活化能物理本质的分析, 排除了巨介电常数起源于经典Maxwell-Wagner极化的可能性; 最后, 依据晶界Schottky势垒与本征点缺陷的本质联系, 提出了巨介电常数起源于Schottky势垒边界陷阱电子弛豫的新机理. 陷阱电子弛豫机理反映了CaCu₃Ti₄O₁₂陶瓷本征点缺陷、 电导、介电常数之间的本质关系. 关键词： 3Ti₄O₁₂')" href="#">CaCu₃Ti₄O₁₂ 介电弛豫 Schottky势垒 点缺陷     

CaCu3Ti4O12陶瓷的微观结构及直流导电特性

采用传统固相反应法制备了CaCu₃Ti₄O₁₂陶瓷.XRD证实其CaCu₃Ti₄O₁₂相;SEM观察到明显的晶粒晶界结构,晶界区亦由小晶粒构成;结合EDS结果,判定晶界区小晶粒为CuO.在较宽的温度范围内,CaCu₃Ti₄O₁₂陶瓷的介电常数保持在10⁵左右;当频率为10³ Hz温度小于150 K时,介电常数迅速下降.在173—373 K温度范围内,通过其I-V特性,得到CaCu₃Ti₄O₁₂陶瓷直流电导随温度的变化：直流电导与温度的关系可分为三部分,对应的活化能分别为0.681 eV,0.155 eV和0.009 eV,这与CuO陶瓷直流电导活化能一致.可以认为晶界区的CuO小晶粒在CaCu₃Ti₄O₁₂陶瓷的直流电导中占主导,这为解释CaCu₃Ti₄O₁₂陶瓷反常的介电性能提供了新的思路. 关键词： 3Ti₄O₁₂')" href="#">CaCu₃Ti₄O₁₂ 微观结构 直流电导 介电特性     

CaCu3Ti4O12块材和薄膜的巨介电常数

用固相反应法和脉冲激光沉积(PLD)制备了CaCu₃Ti₄O₁₂块材和薄膜，获得了相对介电常数ε′（1kHz,300K)高于14000的介电特性，是目前该体系最好的结果.报道了(00l)取向高质量CaCu₃Ti₄O₁₂外延薄膜及其介电性质.C aCu₃Ti₄O₁₂相对介电常数ε′在100—300K温度范围 内 关键词： 3Ti₄O₁₂')" href="#">CaCu₃Ti₄O₁₂ 巨介电常数 PLD     

直流老化对CaCu3Ti4O12陶瓷介电性能的影响

在电场为3.5 kV/cm的条件下, 对CaCu₃Ti₄O₁₂陶瓷进行了60 h的直流老化, 研究了老化过程对CaCu₃Ti₄O₁₂陶瓷介电性能和电气特性的影响. J-E特性测试结果表明, 直流老化导致CaCu₃Ti₄O₁₂陶瓷击穿场强、非线性系数和势垒高度明显降低. 介电性能测试结果表明, 低频介电常数和介电损耗明显增大, 并且介电损耗随频率的变化遵从Debye弛豫理论, 可分解为直流电导损耗和弛豫损耗, 直流老化主要导致了电导损耗的增加. 在低温233 K, 介电损耗谱中出现两个弛豫峰, 其活化能分别为0.10, 0.50 eV, 认为对应着晶粒和畴界的弛豫过程, 且不随直流老化而变化. 通过电模量谱对CaCu₃Ti₄O₁₂陶瓷的弛豫过程进行了表征, 发现直流老化导致的界面空间电荷在外施交变电场的作用下符合Maxwell-Wagner极化效应, 并在低频区形成新的弛豫峰. 在高温323-473 K的阻抗谱中, 晶界弛豫峰在直流老化后明显向高频移动, 其对应的活化能从1.23 eV 下降到0.72 eV, 晶界阻抗值下降了约两个数量级. 最后, 建立了CaCu₃Ti₄O₁₂陶瓷的阻容电路模型, 分析了介电弛豫过程与电性能之间的关联.     

(Na1/2Bi1/2)Cu3Ti4O12陶瓷的微观结构和电学性质

利用固相反应法在不同烧结温度条件下制备了一系列(Na_1/2Bi_1/2)Cu₃Ti₄O₁₂(NBCTO)陶瓷样品,研究了它们的晶体结构、微观组织结构、介电性质和复阻抗及其随温度的变化. 实验发现NBCTO陶瓷所呈现出的电学性质与CaCu₃Ti₄O₁₂陶瓷相应的电学性质非常类似. 烧结温度为990℃至1060℃范围的NBCTO陶瓷样品室 关键词： 高介电材料 介电性质 复阻抗 内阻挡层电容     

Dielectric Properties of Calcium,Strontium, or Barium Titanate Sintered with 5 mol.% of Lithium and Calcium Fluorides

Calcium, strontium, and barium titanates were previously synthesized then mixed and wet-ground with 5 mol.% of lithium and calcium fluorides. These mixtures were pressed into pellets and air-fired. The ceramics were investigated by X-ray diffraction, scanning electron microscopy, and dielectric measurements. Each sample is a perovskite single phase. The oxyfluoride deriving from calcium titanate exhibits a phase transition around 283 K. For strontium titanate, no phase transition is detected. On the other hand, the ceramic related to barium titanate displays a ferroelectric phase transition around 300 K and a dielectric relaxation at about 10 MHz. These oxyfluorides could be of interest for capacitor manufacturing.     

等静压诱导的PbLa(Zr,Sn,Ti)O3陶瓷铁电-反铁电相变性能研究

 研究了等静压诱导掺镧La的Pb(Zr,Sn ,Ti)O₃（PLZST）陶瓷材料的铁电-反铁电相变和介电压谱,结果发现介电压谱具有明显的扩散相变和频率弥散的特点,这一现象有利于拓宽人们对压力诱导的多组元弛豫型铁电体的扩散相变行为的认识和理解。     

层状铁电体Ba_(1-x)Bi_(2+x)Ti_xNb_(2-x)O_9的结构相变研究

本文应用拉曼光谱方法研究了Ba1-xBi2+xTixNb2-xO9的结构相变。与x≠0的情况相比,x=0的情况BaBi2Bn2O9表现出了明确不同的拉曼光谱。前者有与Aurivillius层状铁电体家族的铁电相相似的拉曼光谱。因此认为BaBi2Nb2O9发生了铁电—非铁电相变。此外,用内模方法对层次铁电体Ba1-xBi2+xTixNb2-xO9的拉曼振动模式进行了初步的指认     

Dielectric properties of barium titanate ceramics modified by SiO2 and by BaO-SiO2

The influence of SiO₂ on the dielectric properties of barium titanate ceramics was investigated. SiO₂ had been doped solely and together with BaO into barium titanate before calcination. X-ray diffraction showed that all the ceramics were of a pure perovskite phase after sintering at 1275 °C for 2 h. For SiO₂-doping, there was about 2.5 °C increase in Curie temperature per molar percentage of doping and the leakage current was obviously increased, especially at low voltages for relatively high doping levels. While for the co-doping of SiO₂ and BaO, there was little change in Curie temperature. The point defects formed through the dopings were proposed responsible for the effects. It was suggested that SiO₂ is important to barium titanate ceramics not only for sintering but also for modifying their properties.     

SrBi4Ti4O15的化学键性质和铁电性研究

通过原子环境计算方法分析了正交相SrBi₄Ti₄O₁₅晶体内的键络结构、各原子的空间配位数及局域团簇结构. 在此基础上, 结合晶体分解理论将SrBi₄Ti₄O₁₅晶体分解为多个二元赝晶体, 根据化学键介电理论计算得到各赝晶体所对应化学键的有效价电子密度、离子性等化学键性质. 通过键偶极矩建立了铁电体自发极化强度与化学键性质之间的关系, 求得正交相SrBi₄Ti₄O₁₅沿a轴方向的自发极化强度为28.03 μC/cm², 与实验结果和其他理论计算值符合较好.     

Effect of B-site isovalent doping on electrical and ferroelectric properties of lead free bismuth titanate ceramics

In the present work, zirconium modified bismuth titanate ceramics have been studied as potential lead-free ferroelectric materials over a broad temperature range (RT – 800 °C). Polycrystalline samples of Bi₄Ti_3−xZr_xO₁₂ (x=0.2, 0.4, 0.6) (BZrT) with high electrical resistivity were prepared using the solution combustion technique. The effect of Zr doping on the crystalline structure, ferroelectric properties and electrical conduction characteristics of BZrT ceramics were explored. Addition of zirconium to bismuth titanate enhances its dielectric constant and reduces the loss factor as it introduces orthorhombic distortion in bismuth titanate lattice which is exhibited by the growth along (0010) lattice plane. Activation energy due to relaxation is found to be greater than that due to conduction thus confirming that electrical conduction in these ceramics is not due to relaxation of dipoles. Remanent polarization of the doped samples increases as the Zirconium content increases.     

I-V and C-V characteristics of ceramic materials based on barium strontium titanate

The properties of ferroelectric ceramics based on barium strontium titanate and doped by admixtures with low permittivity and dielectric loss tangent are studied experimentally. These ceramics are viewed as a promising material for microwave devices applied in the acceleration technology. Ceramic samples the I-V characteristics of which contain long horizontal segments are found to have good insulating properties. Various conductivity mechanisms in these ceramics are discussed, and their effect on the amount and character of dielectric hysteresis in these samples is considered.     

Pyroelectric and elastic properties of lead magnesium niobate-and barium titanate-based solid solutions near a phase transition

The pyroelectric, elastic, and electrostrictive properties of lead magnesium niobate-and barium titanate-based solid solutions were studied under a dc electric field near a phase transition. The results obtained for a relaxor transition (in a lead magnesium scandium niobate solid solution) are compared with those derived for a conventional ferroelectric transition (in a barium strontium titanate solid solution). The dielectric and electromechanical contributions to the induced pyroelectric effect are discussed.     

(Bi0.5Na0.5)TiO3-Ba(Ti,Zr)O3 陶瓷的电性能研究

采用氧化固相法制备了(1-x)(Bi0.5Na0.5)TiO3-xBa(Ti0.95Zr0.05)O3(BNT-BZT)陶瓷,其中掺入量x的值分别为0,0.04,0.05,0.06,0.07.研究了BNT-BZT体系陶瓷的准同型相界以及陶瓷材料的微观结构和性能之间的关系,并探讨了陶瓷的介电性能和铁电等性能.通过探究Ba(Ti,Zr)O3(BZT)掺杂量对BNT 各性能的影响得出了当掺杂量x=0.05得到结构较为致密,介电,铁电性能较好的样本,对工业化研究和生产有重要的意义     

Structural and dielectric properties of barium-modified SrBi4Ti4O15 ceramics

Barium-modified strontium bismuth titanate ceramics with chemical formula Sr_1?xBa_xBi₄Ti₄O₁₅ (x = 0.00, 0.02, 0.06, 0.08 and 0.1) (SBBT) have been prepared by means of solid-state reaction technique and their structural and electrical properties were investigated. X-ray diffraction data confirm that all the compositions show orthorhombic structure without any deleterious phase. Scanning electron micrographs show plate like grain morphology with random orientation of platelets. The temperature-dependent dielectric study shows that the phase transition temperature decreases, but the dielectric constant increases with increase in Ba content. Complex impedance plots show that both grain and grain boundary effect on the resistance mechanisms in all the compositions. The values of the activation energy confirm that the oxygen vacancies play an important role in the conduction. The ac conductivity of SBBT ceramics increases as a function of frequency due to relaxation phenomenon which arises due to mobile charge carriers.