嵌埋在SiO2基质中的nc-Ge的制备及其发光现象

采用等离子体化学汽相淀积技术生长a-Ge_xSi_1-x∶H薄膜，然后在800℃，10⁵Pa下于传统开口管式炉中氧化热处理，制备嵌埋在SiO₂中的nc-Ge微晶粒．利用傅里叶变换红外光谱、喇曼光谱和X射线衍射谱分析样品的微结构，研究a-Ge_xSi_1-x∶H薄膜的氧化过程中发生的化学和物理变化，并用平衡态化学反应热理论加以解释．在某些样品中观察到室温下的光致发光现象，采用Brus电 关键词：     

利用偏振喇曼谱研究KBr:Pb2+单晶中的HD色心

本文报道掺铅溴化钾单晶在液氮温度下经大剂量X射线辐照后的偏振喇曼测量结果。利用几年前才发展起来的所谓“表现型”分析方法,确认喇曼谱中频移为186cm^-1的信号具有点群C_1k(010),它起因于H_D色心的A模振动。 关键词：     

Ti与莫来石陶瓷衬底的界面反应

在抛光的200℃莫来石陶瓷衬底上电子束蒸发淀积200nm的Ti膜，并在高真空中退火，利用二次离子质谱（SIMS）、俄歇电子能谱（AES）和X射线衍射分析（XRD）研究了从200—650℃Ti与莫来石的固相界面反应．结果表明，在淀积过程中，最初淀积的Ti与衬底表面的氧形成Ti—O键，并有微量元素态Al，Si原子析出，界面区很窄；450℃，1h退火后，界面区有所展宽，但变化不大；650℃，1h退火后，界面发生强烈反应，样品主要由TiO＋Ti，Ti₃Al，Ti₃Al＋TiSi₂和莫来石陶瓷衬底四层结构组成 关键词：     

SiO2上共溅射W-Si薄膜退火后的X射线衍射研究

用一个W-Si混合靶源,以直流磁控溅射在SiO₂上共溅射一层W-Si薄膜后,进行500—1000℃,15s的真空快速热退火,发现薄层电阻随退火温度出现一反常的极大值。用转靶X射线衍射研究分析了这一反常现象。在直至1100℃高温退火的样品中发现薄膜中存在W₅Si₃。它对薄层电阻有一定的贡献。 关键词：     

Ti离子注入和退火对ZnS薄膜结构和光学性质的影响

利用真空蒸发法在石英玻璃衬底上制备了ZnS薄膜,将能量80 keV,剂量1×10¹⁷ cm^-2的Ti离子注入到薄膜中,并将注入后的ZnS薄膜进行退火处理,退火温度500—700 ℃.利用X射线衍射（XRD）研究了薄膜结构的变化,利用光致发光（PL）和光吸收研究了薄膜光学性质的变化.XRD结果显示,衍射峰在500 ℃退火1 h后有一定程度的恢复;光吸收结果显示,离子注入后光吸收增强,随着退火温度的上升,光吸收逐渐降低,吸收边随着退火温度的提高发生蓝移;PL显示,薄 关键词： ZnS薄膜 离子注入 X射线衍射 光致发光     

GexSi1-x/Si超晶格的X射线小角衍射分析

用分子束外延生长了23周期的Ge_xSi_1-x/Si超晶格,用计算机控制的衍射仪(CuK_a辐射)测量了X射线衍射曲线,共观察到13级超晶格结构的衍射峰。超晶格的周期和Ge平均含量可以根据考虑折射修正的布喇格定律得出。用光学多层膜反射理论分析衍射曲线可以确定超晶格的结构参数,第2级衍射峰与第一级峰的强度比对应于超晶格两种材料的相对厚度变化非常灵敏,通过比较实验和计算的I₂/I₁值,可以确定Si,Ge_xSi_1-x层的厚度以及合金组份x。用光学多层膜反射理谁计算得到的衍射曲线与实验曲线趋于一致。 关键词：     

白光LED用Ca3Si3O9：Dy3+荧光粉的制备及其发光性能

采用溶胶-凝胶法制备了可用于白光LED的新型Ca₃Si₃O₉:Dy³⁺荧光粉, 通过对样品的X 射线衍射谱及光致发光光谱的测试和表征, 研究了Ca₃Si₃O₉:Dy³⁺的物相结构和发光性能. 结果显示, Ca₃Si₃O₉:Dy³⁺的发射光谱是由位于483 nm和577 nm处的主峰构成的双峰谱线, 激发光谱为多峰宽谱, 谱峰位于290–480 nm范围内. Dy³⁺掺杂浓度对Ca₃Si₃O₉:Dy³⁺发光性能有明显的影响, 随着Dy³⁺浓度的增大, Ca₃Si₃O₉:Dy³⁺的发光强度和黄、蓝光发射强度比 (Y/B) 均呈现先增大后减小的规律, 最大发光强度值对应的Dy³⁺浓度为1 mol%. 电荷补偿剂Li⁺能提高Ca₃Si₃O₉:Dy³⁺的发光强度, 特别当Li⁺浓度为2–4 mol%时, 荧光粉的蓝光发射强度显著增大. 关键词： 白光LED 溶胶-凝胶法 3Si₃O₉：Dy³⁺')" href="#">Ca₃Si₃O₉：Dy³⁺ 发光特性     

高压剪切作用下三水铝石的结构稳定性

利用旋转式金刚石对顶砧压机(RDAC)结合显微激光拉曼光谱和微区X射线衍射,研究了三水铝石(γ-Al(OH)₃)在高压剪切作用下的结构稳定性。常温加压至1.5 GPa,旋转180°后,γ-Al(OH)₃的结构开始转变。初始样品在高波数段的4个羟基伸缩振动峰(3363、3434、3524和3618 cm^-1)相继消失,出现3303和3560 cm^-12个新峰。低波数段拉曼谱强度明显减弱,无非晶态宽峰;Al-O-Al变形振动双峰(568、539 cm^-1)和Al-O伸缩振动肩峰(321和307cm^-1)分别融合为一个振动峰;4个羟基变形振动峰(1052、1018、981和922 cm^-1)仍然可见。继续加压至3.5 GPa,旋转360°后卸至常压,高波数段新出现的两个羟基伸缩振动峰、原Al-O-Al变形振动峰和Al-O伸缩振动峰仍然可见。对比准静水压条件下γ-Al(OH)₃高压相的拉曼谱和相转变压力(约2.7 GPa),认为常温高压剪切作用下γ-Al(OH)₃脱羟基生成了H₂O和H₃O^-₂。卸压样品微区的X射线衍射谱进一步揭示,在高压剪切作用下,γ-Al(OH)₃的(OH)-Al-(OH)配位八面体骨架被破坏,沿c轴方向原子叠加的层间距缩小,对称性增强。这种不同于准静水压实验的结构改变来自腔体内压力的不均匀分布(0.5~4.5 GPa)。高压剪切作用下,三水铝石的结构稳定性研究对查明板块冷俯冲带中含水矿物的稳定性,推演俯冲板片的物理化学性质以及板块俯冲的速率具有重要意义。     

高温氢退火还原V2O5制备二氧化钒薄膜及其性能的研究

过渡金属氧化物二氧化钒(VO₂)在温度340 K附近会发生金属绝缘体的转变(metal-insulator transition, MIT). 基于金属绝缘体的转变性质, VO₂薄膜材料具有很好的应用前景. 本文首先采用脉冲激光沉积制备了高质量的V₂O₅薄膜, 再通过高温氢退火还原V₂O₅薄膜制备出VO₂多晶薄膜. 研究了不同的退火温度、退火时间、退火气氛对VO₂薄膜制备的影响, 采用X射线衍射、X射线光电子能谱、变温电阻特性测量等手段对样品进行分析, 发现在H₂(5%)/Ar退火气氛下, 在一定的退火温度范围内(500–525 ℃), 退火 3 h, 得到了B相和M相共存的VO₂薄膜, 具有M相的VO₂的MIT特性, 而相同退火温度下退火时间达到4.5 h, 薄膜完全变成B相的VO₂. 通过纯Ar气氛下对B相VO₂再退火, 得到了转变温度为350 K, 电阻突变接近4个数量级的M相的VO₂薄膜. 实现了VO₂的B相和M相的相互转变. 关键词： 2薄膜')" href="#">VO₂薄膜 金属绝缘体转变 氢退火     

InP/SiO2纳米复合膜的微观结构和光学性质

应用射频磁控共溅射方法在石英玻璃和抛光硅片上制备了InP/SiO₂复合薄膜,并在几种条件下对这些薄膜进行退火.X射线光电子能谱和卢瑟福背散射实验结果表明,复合薄膜中InP和SiO₂的化学组分都大体上符合化学计量配比.X射线衍射和激光喇曼谱实验结果都证实了复合薄膜中形成了InP纳米晶粒.磷气氛保护下的高温(520℃)退火可以消除复合薄膜中残存的In和In₂O₃并得到了纯InP/SiO₂纳米复合薄膜.实验观察到了室温下纳米复合薄膜的明显的光学吸收边蓝移现象和光学非线性的极大增强 关键词： InP 纳米晶粒 微观结构 光学性质     

XRD and RBS study of annealing effects in titanium implanted a-silicon films

We have used ion implantation of 30 keV⁴⁸Ti⁺ ions into a-Si films at nominal doses of 10²⁰-10²¹ ions/m² to fabricate coherent silicide layers. Characterization of these layers and study of their annealing behaviour were carried out using XRD and RBS techniques. We find that the layers are a mixture of Ti₅Si₄, TiSi, TiSi₂ and Si. On annealing at relatively lower temperatures (up to ～ 300° C), predominant silicide phases present in the layer are Ti-rich, such as Ti₅Si₄ and TiSi. At higher temperatures, the Ti-rich layer has a tendency to consume unreacted Si from the film and to form a predominantly Si-rich silicide layer. A structure of silicon different from the diamond cubic structure is noticed in these implanted layers.     

Temperature dependent Raman scattering in polycrystalline Bi4Ti3O12 thin films

Polycrystalline Bi₄Ti₃O₁₂ thin films were prepared on quartz substrates by pulsed laser deposition. The films were crystallized in the orthorhombic layer perovskite structure confirmed by X-ray diffraction and Raman spectroscopy. The Raman spectra are strongly dependent on temperature. A subtle phase transition in the temperature range 473-573 K exists in polycrystalline BTO thin films, which is evidenced by the disappearance of the Raman band at 116 cm⁻¹ and appearance of a new Raman band at 151 cm⁻¹. The two broad Raman bands centered at the 57 and 93 cm⁻¹ at 300 K break up into clusters of several sharp Raman peaks at 77 K, due to monoclinic distortion of orthorhombic structure at low temperature in the as-prepared Bi₄Ti₃O₁₂ thin films.     

退火气压对Bi3.25La0.75Ti3O12铁电薄膜的微观结构和铁电性能的影响

采用sol-gel法在Pt/TiO₂/SiO₂/p-Si(100)衬底上制备了Bi_3.25La_0.75Ti₃O₁₂(BLT)铁电薄膜,研究了在750 ℃时不同退火气压(p_{O2:10^-4—3 atm)对薄膜微观结构和电学性能的影响.XRD和拉曼光谱结果表明在10^-4和3 atm氧气压下退火 关键词： 3.25}La_0.75Ti₃O₁₂')" href="#">Bi_3.25La_0.75Ti₃O₁₂ 铁电性能 sol-gel法 正交化度     

Ti--Al based ohmic contacts to n-type 6H-SiC with P+ ion implantation

The Ti--Al ohmic contact to n-type 6H-SiC has been fabricated. An array of TLM (transfer length method) test patterns with Au/Ti/Al/Ti/SiC structure is formed on N-wells created by P⁺ ion implantation into Si-faced p-type 6H-SiC epilayer. The specific contact resistance \rho _c as low as 8.64×10^-6\Omega\cdot cm² is achieved after annealing in N₂ at 900℃ for 5\,min. The sheet resistance R_sh of the implanted layers is 975\Omega/\sqcap\!\!\!\!\sqcup. X-ray diffraction (XRD) analysis shows the formation of Ti_-3SiC₂ at the metal/n-SiC interface after thermal annealing, which is responsible for the low resistance contact.     

A Raman spectroscopic and TEM study on the structural evolution of Na2Ti3O7 during the transition to Na2Ti6O13

The synthesis of sodium hexatitanate from sodium trititanate was characterized by Raman spectroscopy, X‐ray diffraction (XRD) and high‐resolution transmission electron microscopy (HRTEM). The structural evolution from trititanate to hexatitanate was studied using Raman spectra, XRD and HRTEM techniques. It was found that the Raman bands at 279 cm⁻¹ corresponding to very long Ti O bonds and at 883 cm⁻¹ corresponding to the very short Ti O bonds decrease in intensity and finally disappear during the transition from sodium trititanate to sodium hexatitanate. The band at 922 cm⁻¹ corresponding to an intermediate‐length Ti O bond was observed to become stronger with the increase in temperature, indicating that there is no terminal oxygen atom in the crystal structure of Na₂Ti₆O₁₃ and that all the oxygen atoms become linearly coordinated by two titanium atoms. Furthermore, the TiO₆ octahedron in Na₂Ti₆O₁₃ are more regular because the very long (2.2 Å) or very short (1.7 Å) Ti O bonds disappear. It is revealed that the phase transition from trititanate to hexatitanate is a step‐by‐step slipping process of the TiO₆ octahedral slabs with the loss of sodium cations, and a new phase with formula Na_1.5H_0.5Ti₃O₇ has been discovered as an intermediate phase to interlink Na₂Ti₃O₇ and Na₂Ti₆O₁₃. Copyright © 2010 John Wiley & Sons, Ltd.     

微波等离子体化学汽相沉积法沉积CNx膜的研究

对用微波等离子体化学汽相沉积法沉积在Si基片上的CN_x膜分别进行Raman散射、X射线光电子能谱、X射线衍射和扫描电子显微镜等技术的分析与测试. Raman散射的研究结果表明在CH₄与N₂的流量比低于1∶8时，CN_x膜的散射谱中以非晶石墨峰的形式出现.当流量比为1∶8时，则表现为较尖锐的C≡N键(2190cm^-1)的特征峰；从X射线光电子能谱的分析结果可以看出C，N成键的方式主要是C≡N键和C—N 关键词：     

新型激光晶体Yb:KY(WO4)2的结构与光谱

采用顶部籽晶提拉法，以K₂W₂O₇为助溶剂，生长了Yb:KY(WO₄)₂新型激光晶体.经热重-差热分析，确定晶体熔点为1045℃，相变温度为1010℃.X射线粉末衍射测试，验证所生长的晶体为β-Yb:KY(WO₄)₂.晶体结构分析确定Yb:KY(WO₄)₂晶体由WO₆八面体连接而成，WO₆八面体是由双氧桥(WOOW)及单氧桥(WOW)构成.晶体粉末样品室温下的红外及拉曼光谱测试，确定WO₆原子基团、双氧桥及单氧桥的振动频率.晶体的吸收峰位于940nm，980nm，发射峰位于989nm—1030nm. 关键词： 晶体结构 光谱 晶体生长     

Structural phase changes in a titanium-silicon system modified by high-current electron beams and compression plasma flows

Structural phase changes in a titanium-silicon system treated by low-energy high-current electron beams (HCEBs) and compression plasma flows (CPFs) with the duration 100 μs and the energy density 12–15 J/cm² are studied. Scanning electron microscopy, X-ray diffraction and electron microprobe analysis are used in this work. The formation of a titanium-doped silicon layer 10–25 μm thick, titanium silicides (TiSi₂ under HCEBs and Ti₅Si₃ under CPF treatment), silicon dendrites, and needle-like eutectics (typical size of precipitates is about 50 nm) is revealed. It is shown via the results of numerical simulation that the thickness of the metal-doped layer is mainly controlled by the power density value and the surface nonuniformity of the heat flow over the target surface. The thermodynamic regularities of phase formation are discussed, taking into account heat transfer between the silicide nuclei and solid silicon.     

Pressure‐induced anomalous phase transformation in nano‐crystalline dysprosium sesquioxide

The phase transformation in nano‐crystalline dysprosium sesquioxide (Dy₂O₃) under high pressures is investigated using in situ Raman spectroscopy. The material at ambient was found to be cubic in structure using X‐ray diffraction (XRD) and Raman spectroscopy, while atomic force microscope (AFM) showed the nano‐crystalline nature of the material which was further confirmed using XRD. Under ambient conditions the Raman spectrum showed a predominant cubic phase peak at 374 cm⁻¹, identified as F_g mode. With increase in the applied pressure this band steadily shifts to higher wavenumbers. However, around a pressure of about 14.6 GPa, another broad band is seen to be developing around 530 cm⁻¹ which splits into two distinct peaks as the pressure is further increased. In addition, the cubic phase peak also starts losing intensity significantly, and above a pressure of 17.81 GPa this peak almost completely disappears and is replaced by two strong peaks at about 517 and 553 cm⁻¹. These peaks have been identified as occurring due to the development of hexagonal phase at the expense of cubic phase. Further increase in pressure up to about 25.5 GPa does not lead to any new peaks apart from slight shifting of the hexagonal phase peaks to higher wavenumbers. With release of the applied pressure, these peaks shift to lower wavenumbers and lose their doublet nature. However, the starting cubic phase is not recovered at total release but rather ends up in monoclinic structure. The factors contributing to this anomalous phase evolution would be discussed in detail. Copyright © 2010 John Wiley & Sons, Ltd.