软X射线相位型聚焦波带片的研制

软X射线波带片是软X射线光学中聚焦、色散和成像的重要元件。以激光全息-离子束刻蚀技术制作金的振幅型软X射线聚焦波带片,以此为掩模,利用接触式同步辐射光刻和离子束刻蚀技术在聚酰亚胺衬底上,分别制作出了镍和锗的软X射线相位型聚焦波带片。     

2000 l/mm X射线镂空透射光栅的制备研究

在满足工艺要求的前提下,通过模拟光栅衍射,设计出镂空透射光栅模型,在此基础上将电子束和X射线光刻技术相结合,研究了制造2000 l/mm X射线镂空透射光栅的新工艺技术.首先利用电子束光刻和微电镀技术在镂空聚酰亚胺薄膜底衬上制备X射线母光栅掩模.然后利用X射线光刻和微电镀技术实现了光栅图形的复制,之后采用紫外光刻和微电镀技术制作加强筋结构,最后通过腐蚀体硅和等离子体刻蚀聚酰亚胺完成镂空透射光栅的制作.从此新的制造工艺结果上来看.制备的光栅栅线平滑,占空比合理,侧壁陡直,不同光栅之间一致性好,完全可以满足应用需求,充分表明了该制造技术是透射式X射线衍射光学元件制造的良好选择.     

3333lp/mm X射线透射光栅的研制

针对X射线透射光栅摄谱仪中的高线密度光栅,研究了采用电子束曝光和X射线曝光技术结合制作高线密度X射线透射光栅的工艺技术.首先利用电子束曝光和微电镀技术在镂空的薄膜上制备母光栅X射线掩模版,然后利用X射线曝光和微电镀技术小批量复制光栅.在国内首次完成了3333lp/mm X射线透射光栅的研制,栅线宽度为150nm,周期为300nm,金吸收体厚度为500nm.衍射效率标定的结果表明,该光栅的占空比合理、侧壁陡直,具有良好的色散特性,能够满足空间探测、同步辐射和变等离子诊断等多个领域的应用.     

Single-shot soft x-ray laser-induced ablative microstructuring of organic polymer with demagnifying projection

We report on a single-shot micropatterning of an organic polymer achieved by ablation with demagnifying projection using a Ne-like Zn 21.2 nm soft x-ray laser. A nickel mesh with a period of 100 microm was approximately 10x demagnified and imprinted on poly(methyl methacrylate) via direct ablation. The quality of the ablated microstructure was found to be mainly dependent on the quality of the projected mask. This first demonstration (to our knowledge) of single-shot projection, single-step lithography illustrates the potential of soft x-ray lasers for the direct patterning of materials with a resolution scalable down to submicrometer domain.     

Upgrading design of the 3B1A beamline for x-ray nanometre lithography of microelectronic devices at BSRF

Beijing Synchrotron Radiation Facility is a partly dedicated synchrotron radiation source operated in either parasitic or dedicated mode. The 3B1A beamline, extracted from a bending magnet, was originally designed as a soft x-ray beamline for submicro x-ray lithography with critical lateral size just below 1μm in 1988 and no change has been made since it was built. But later the required resolution of x-ray lithography has changed from sub-micrometre to the nanometre in the critical lateral size. This beamline can longer more meet the requirement for x-ray nano lithography and has to be modified to fit the purpose. To upgrade the design of the 3B1A beamline for x-ray nano lithography, a mirror is used to reflect and scan the x-ray beam for the nano lithography station, but the mirror's grazing angle is changed to 27.9mrad in the vertical direction, and the convex curve needs to be modified to fit the change; the tiny change of mirror scanning angle is firstly considered to improve the uniformity of the x-ray spot on the wafer by controlling the convex curve.     

Beamline BL‐07 at Indus‐2: a facility for microfabrication research

The X‐ray lithography beamline on Indus‐2 is now operational, with two modes of operation. With a pair of X‐ray mirrors it is possible to tune the energy spectrum between 1 and 20 keV with a controlled spectral bandwidth. In its `no optics' mode, hard X‐rays up to 40 keV are available. Features and performance of the beamline are presented along with some example structures. Structures fabricated include honeycomb structures in PMMA using a stainless steel stencil mask and a compound refractive X‐ray lens using a polyimide–gold mask in SU‐8.     

大面积10000线/毫米软X射线金属型透射光栅的设计、制作与检测

基于严格的矢量耦合波理论,优化设计了用于13.4nm软X射线干涉光刻的透射型双光栅掩模版. 采用电子束光刻技术,在国内首次成功制作了周期为100nm的大面积金属型透射光栅.光栅面积为1.5mm ×1.5mm,Cr浮雕厚度为50nm,Gap/period为0.6,衬底Si₃N₄厚度为100nm. 此光栅将用于上海光源软X射线干涉光刻实验站.利用其1级衍射光和2级衍射光将可以经济高效地制作周期为50和25nm的大面积周期结构.最后,测量了该光栅对波长为13.4nm 同步辐射光的衍射光强度,并且推算得出该光栅的1级和2级衍射效率分别为4.41%和0.49%,与理论设计值比较符合.实验结果与理论模拟结果的对比表明该光栅侧壁陡直,Gap/period的控制也与设计值符合. 关键词： 软X射线金属型透射光栅 严格耦合波方法 衍射效率 软X射线干涉光刻     

软模板纳米压印技术及其对共轭高分子的取向控制研究

纳米压印模板通常需要经过电子束光刻、电子束沉积、光刻胶剥离、反应离子刻蚀等一系列复杂工艺获得,这使得纳米压印模板的制作难度大,成本高. 寻找一种灵活简单的纳米压印模板制备方法以提升纳米压印模板的制作效率,是广泛应用纳米压印技术的研究重点和难点. 本文以写好光栅结构的电子束光刻胶层为母模板,获得聚二甲基硅氧烷软模板,并以此为模板对共轭高分子聚(9,9-二辛基)芴薄膜进行纳米压印,实现光栅结构转移,成功制备出纳米光栅结构的共轭高分子薄膜. 偏振吸收谱和透射电镜结果表明,纳米压印实现图案转移的同时,还可以将共轭高分子的主链控制在光栅条纹方向,这对有机发光器件性能的提升具有重要的意义. 研究结果还表明,应用该方法同样可以对聚(9,9-二辛基芴共苯并噻二唑)薄膜进行光栅图案化,同时实现其取向控制. 关键词： 纳米压印 软模板共轭高分子 分子链取向     

A novel hanging bowl-shaped mask for the fabrication of vertical sidewall structures

Contact exposure is expected to occur in conventional lithography, and can be a source of process deviations (such as shrinking and distortion of templates) during reactive ion etching and inductively coupled plasma etching, as these deviations are induced by ion bombardment. This typically results in undesired sidewall effects, such as lower sidewall angles. Here we report a novel hanging bowlshaped lithography mask that can effectively minimize sidewall effects in lithography applications. As a test case, standard silicon carbide pillars with vertical sidewalls are fabricated using this mask. The mask could be used for fabrication of high-aspect-ratio structures with ultra-violet lithography.     

Fabrication of LIGA masks for microfluidic analytical systems

Preliminary results of fabrication and testing of LIGA mask samples for deep x-ray lithography in the spectral range of 3.5–13.5 keV are presented. The mask fabrication method is based on direct mask patterning with minimum element sizes of ≥ 10 μm by a synchrotron radiation x-ray microbeam. Such a method does not require an intermediate mask, which significantly simplifies fabrication and reduces the laboriousness and cost of LIGA masks.     

一种简单高效的制备硅纳米孔阵结构的方法

本文介绍了一种简单高效的制备硅纳米孔阵结构的方法. 利用激光干涉光刻技术, 结合干法和湿法刻蚀工艺, 直接将光刻胶点阵刻蚀为硅纳米孔阵结构, 省去了图形反转工艺中的金属蒸镀和光刻胶剥离等必要步骤, 在2英寸的硅 (001) 衬底上制备了高度有序的二维纳米孔阵结构. 利用干法刻蚀产生的氟碳有机聚合物作为湿法刻蚀的掩膜, 以及在干法刻蚀时对样品进行轻微的过刻蚀, 使SiO₂点阵图形下形成一层很薄的硅台面, 是本方法的两个关键工艺步骤. 扫描电子显微镜图片结果表明制备的孔阵图形大小均匀, 尺寸可控, 孔阵周期为450 nm, 方孔大小为200–280 nm. 关键词： 激光干涉光刻 纳米阵列 刻蚀 氟碳有机聚合物     

Lithographic processing of polymers using plasma-generated electronbeams

Pattern definition in polymer films is achieved using electron beams generated in soft vacuum (0.05-0.50 torr) glow discharges either on a continuous or a pulsed (20-100 ns) basis. With the continuous-mode electron beam, 7-μm transmission mask features are replicated in both polymethyl methacrylate (PMMA) and polyimide resists. Using a pulsed electron-beam submicron (~0.5 μm) features are transferred from an electron-transmitting stencil mask into the PMMA. The soft-vacuum pulsed electron beam is also eminently suited for polymer stabilization. Pulsed electron-beam hardening of 0.05-3.5 μ-thick AZ-type and MacDermid resist patterns is also demonstrated with hardened resist patterns stable to temperatures between 200° and 350°C. The demonstrated replication and pattern stabilization technique may be applicable in microelectronics packaging lithography where the resist thickness is substantial, linewidths are 1-10 μm, and registration requirements are less stringent     

纳米球刻蚀法制备的二维有序的CdS纳米阵列及其光学性质的研究

采用纳米球刻蚀(nanosphere lithography)技术,以自组装的聚苯乙烯纳米小球(polystyrene,PS小球)的单层膜为掩模,制备出二维有序的CdS纳米阵列.利用扫描电子显微镜(SEM)对样品结构进行了表征,用紫外—可见分光光度计对样品光学性质进行了分析.结果表明：制备的二维CdS纳米阵列是高度有序的,且与作为掩模的纳米小球的原始尺寸及排布结构一致;禁带宽度为2.60eV,相对于体材料的2.42eV,向短波长蓝移了0.18eV,表现出CdS材料在纳米结构点阵中的量子尺寸效应;CdS纳米 关键词： 纳米球刻蚀 二维CdS纳米有序阵列     

二维光子晶体的软平板印刷技术制作研究

分析了软平板印刷技术制作二维光子晶体的特点和方法.利用绝缘PDMS模板,采用软平板印刷技术制造了三角晶系结构的二维聚合物光子晶体,采用同样的技术成功制成尺寸为150~500 nm,纵横比达1.25的高密度二维光子晶体.与其他制作技术相比,平板印刷技术具有大尺寸和易于制作的优点.结果表明,制作获得的微结构有很高的保真度.     

Fabrication of large-scale periodic silicon nanopillar arrays for 2D nanomold using modified nanosphere lithography

We present a fabrication procedure that can form large-scale periodic silicon nanopillar arrays for 2D nanomold which determines the feature size of nanoimprint lithography, using modified nanosphere lithography. The size of silicon nanopillars can be easily controlled by an etching and oxidation process. The period and density of nanopillar arrays are determined by the initial diameter of polystyrene (PS) spheres. In our experiment, the smallest nanopillar has a full width half maximum (FWHM) of approximately 50 nm, and the density of silicon pillar is ∼10⁹/cm². Using this approach, it is possible to fabricate 2D nanoimprint lithography mask with 50 nm resolution.     

基于同步辐射光刻的三维微细加工方法

同步辐射光刻的三维聚甲基丙烯酸甲酯（Polymethyl Methacrylate，PMMA）微结构制造对X射线光刻掩膜板的吸收体形状和PMMA所吸收的X射线能量分布有直接影响，即三维PMMA微结构形状取决于X射线光刻掩膜板的吸收体形状。如果不对X射线光刻掩膜板进行补偿，在被曝光的结构中可观察到结构侧面的变形。研究了引起这种结构侧面变形的各种原因并提出X射线剂量对刻蚀深度非线性曲线是最直接的原因。基于X射线光刻掩膜板图形形状和实际制造的三维PMMA微结构的误差，X射线光刻掩膜板从双直角三角形变为双半圆图形使得微注射针阵列的强度得到增强。为了量化实际制造的三维PMMA微结构的误差，给出了X射线吸收能量分布与微结构的结构形状数据。     

Macromolecular nanoelectronics

We have explored new organic materials and fabrication methods to fabricate organic photodiodes and light emitting diodes. Grafting of a fullerene derivative to a polythiophene backbone yielded an integrated acceptor-donor polymer that we used as the active material in organic photodiodes. Using a method of soft lithography, soft embossing, we fabricated submicron structures to be used as organic light emitting diodes. Employing a silicone rubber replica (stamp) of an optical diffraction grating we transferred the grating pattern to an organic resist layer by placing the stamp in conformal contact with the resist. The transferred pattern was subsequently used as an etch mask for the processing of the device. The structures were successfully utilized as light emitting diodes and photodiodes, with device characteristics influenced by the imposed structure.     

投影电子束光刻中电子穿透掩膜的Monte Carlo模拟

利用基于Mott散射截面和介电函数模型的Monte Carlo方法模拟了电子穿透掩膜的能量损失分布，其计算结果与实验结果符合很好. 由此进一步计算了角度限制投影电子束光刻(SCALPEL)掩膜的穿透率和衬度，结果表明：散射体的厚度对衬度的影响较大，衬度随散射体厚度的增加而增强，而支撑体对衬度的影响较小；增大限制孔的孔径角时，透射率相应增大，但衬度会降低；衬度随入射电子的能量增加而减小. 关键词： Monte Carlo模拟 电子束光刻 掩膜     

极紫外投影光刻掩模阴影效应分析

极紫外（EUV）投影光刻掩模在斜入射光照明条件下,掩模成像图形位置和成像图形特征尺寸（CD）都将随入射光方向变化,即存在掩模阴影效应。基于一个EUV掩模衍射简化模型实现了掩模阴影效应的理论分析和补偿,得到了掩模（物方）最佳焦面位置和掩模图形尺寸校正量的计算公式。掩模（物方）焦面位置位于多层膜等效面上减小了图形位置偏移;基于理论公式对掩模图形尺寸进行校正,以目标CD为22 nm的线条图形为例,入射光方向变化时成像图形尺寸偏差小于0.3 nm,但当目标CD继续减小时理论公式误差增大,需进一步考虑掩模斜入射时整个成像光瞳内的能量损失和补偿。     

X射线微光刻的常规X射线光源实现方法

叙述了利用固体靶X射线光源实现X射线微光刻的方法,给出了X射线掩膜、抗蚀剂及X射线曝光的工艺过程和实验结果.