溶胶-凝胶法制备SiO2-TiO2平板光波导工艺研究

采用溶胶-凝胶法制备了SiO₂-TiO₂平板光波导,计算了平板光波导通光条件,分析了硅/钛溶胶-凝胶材料的热性能,观测了平板光波导的结构形貌,并测试了其通光损耗。结果表明：经过200℃,30 min干燥处理的凝胶薄膜呈疏松多孔状态,对于非对称平板波导,存在芯层通光截止厚度,而且当SiO₂-TiO₂芯层厚度为0.5 μm时,SiO₂下包层厚度至少有6 μm才能防止1550 nm波长光泄露入单晶硅衬底中。制备的光波导对于1550 nm波长光传输损耗最小值为0.34 dB/cm。     

掺杂LaF3:Er,Yb纳米颗粒的有机无机复合型平面光波导放大器的制备及增益测试

采用油酸修饰的铒镱共掺氟化镧纳米颗粒掺杂的有机-无机杂化材料做为光波导放大器的有源层,同时采用光学性质良好的甲基丙烯酸甲酯-甲基丙烯酸环氧丙酯共聚物制作光波导的上下包层,首先说明了芯层材料不能刻蚀制备传统矩形波导的原因,其次设计了一种倒眷结构的平面光波导放大器,并采用蒸镀铝掩膜、紫外光刻和反应离子刻蚀等工艺,制备出放大...     

聚合物2×2定向耦合型电光开关

设计并制作了一种聚合物2×2定向耦合型电光开关.针对溶胶-凝胶法合成的有机/无机杂化电光材料膜厚较薄的情况,采用一种加载条形波导结构,利用掺有环氧丙脂的聚甲基丙烯酸甲脂-甲基丙烯酸缩水甘油脂作为引导层,在电光薄膜上构成定向耦合器,通过紫外光刻、反应离子刻蚀、电晕极化等工艺,制备了聚合物定向耦合型电光开关,并采用共面波导行波电极以电推挽方式工作.经测试,其器件损耗约为16 dB,开关电压9 V.     

掺杂LaF3∶Er,Yb纳米颗粒的有机无机复合型平面光波导放大器的制备及增益测试

采用油酸修饰的铒镱共掺氟化镧纳米颗粒掺杂的有机-无机杂化材料做为光波导放大器的有源层,同时采用光学性质良好的甲基丙烯酸甲酯-甲基丙烯酸环氧丙酯共聚物制作光波导的上下包层,首先说明了芯层材料不能刻蚀制备传统矩形波导的原因,其次设计了一种倒脊结构的平面光波导放大器,并采用蒸镀铝掩膜、紫外光刻和反应离子刻蚀等工艺,制备出放大器的样品,同时对样品端面进行了化学机械抛光处理,在信号光（1 550 nm）功率为1 mW的条件下,在1.9 cm长度的波导上获得了3.2 dB的相对增益.     

玻璃平板光波导及棱镜耦合器的实验

<正> 一、玻璃平板光波导的制备众所周知,平板光波导是由三层电介质构成的,即由折射率为n_f的导波层,折射率为n_s的衬底及折射率为n_c的上包层等三层电介质构成的,如图1所示,其中n_f>n_s≥n_c。作为无源光波导的材料,通常要求它对传导光的吸收损耗小,易于成膜,并且导波层具有高于衬底的折射率。我们选用K9玻璃作衬底材料,BaK7玻璃作导波层材料,利用高频溅射工艺制备了光波导。先将衬底制成2×10×70毫米的样品,并对要成膜的一面仔细地进行光学抛光(要求不     

利用51微米激光器测量中红外光波导损耗(英文)

一种新型的采用AlGaAs材料设计制成的光波导显示了其在中红外激光器方面的应用。波导部分包含在两个GaAs的包层之间,两个包层的掺杂材料限制光场在波导中传播并且降低损耗。三个不同长度的波导经过切入式测量得到它们的内部传播损耗为1 5dB/cm和耦合损耗为9dB。所采用的中红外激光器的波长是5 1μm,输出功率在45毫瓦以上。从光波导输出的光功率只有几个毫瓦。     

硅基光波导芯层材料及波导分束器的制备

本文采用溶胶-凝胶法制备了具有紫外感光性的SiO2/ZrO2/H有机无机复合薄膜,利用分光式椭偏仪测得该薄膜在光纤的常用通信窗口0.85 μm、1.31 μm和1.55 μm波长附近折射率分别为1.556 9、1.548 9和1.547 2,与下包层SiO2的折射率(1.46)相比,其折射率差比δ分别为6.64%,6.09%和5.97%,可作为芯层材料用于光波导的制备.通过控制提拉速率可以制作出厚度分别为1.29,2.20,4.00,5.44和6.82 μm的SiO2/ZrO2/H芯层薄膜,以满足0,1,2,3和4阶导模的传输要求.进而利用该薄膜自身的感光特性结合紫外掩模法,制备出相应厚度的1×8Y分支光功率分配器.通光实验表明,该光功分器能够将1.53～1.56 μm波长的光限制在波导内,实现光的传输和分束功能.     

聚硅氧烷改性及多模光波导制备

采用含氢聚硅氧烷(HPSO)和二乙烯基苯(DVB)的交联体掺入聚二甲基硅氧烷(PDMS)中,使改性的聚二甲基硅氧烷(M-PDMS)折射率发生1%～1.8%的改变。M-PDMS及PDMS薄膜具有良好的光透射率和低的传输损耗,是低成本制备用于高速芯片间光互连聚合物光波导的理想材料。采用软成型和图案转移法,用M-PDMS及PDMS分别作波导的芯层和包层制备了截面为50μm×50μm,长度大于20cm的聚硅氧烷多模光波导。用数字化散射法测量了所制备波导的传输损耗,测得输入光波长为633nm时平均传输损耗为0.137dB/cm。     

硅基光波导芯层材料及波导分束器的制备

本文采用溶胶－凝胶法制备了具有紫外感光性的SiO2/ZrO2/H有机无机复合薄膜,利用分光式椭偏仪测得该薄膜在光纤的常用通信窗口0.85 μm、1.31 μm和1.55 μm波长附近折射率分别为1.556 9、1.548 9和1.547 2,与下包层SiO2的折射率（1.46）相比,其折射率差比δ分别为6.64％,6.09％和5.97％,可作为芯层材料用于光波导的制备.通过控制提拉速率可以制作出厚度分别为1.29,2.20,4.00,5.44和6.82 μm的SiO2/ZrO2/H芯层薄膜,以满足0,1,2,3和4阶导模的传输要求.进而利用该薄膜自身的感光特性结合紫外掩模法,制备出相应厚度的1×8Y分支光功率分配器.通光实验表明,该光功分器能够将1.53～1.56 μm波长的光限制在波导内,实现光的传输和分束功能.     

紫外胶在聚合物准矩形电光波导中的应用

基于聚合物材料的波导型电光器件对提升光通信网络的带宽容量具有重要的意义。设计并制备了一种基于有机/无机杂化非线性材料的准矩形聚合物电光波导,采用SiO2作为下包层,紫外胶SU-8作为引导芯层,掺有生色团DR1的有机/无机杂化非线性材料DR1/SiO2-TiO2作为电光层,通过优化感应耦合等离子体刻蚀工艺的天线功率、偏置功率和氧气流量,将SU-8同时作为引导芯层和刻蚀工艺的掩模,制备了准矩形电光波导。实验测得波导传输损耗为-3.5 dB/cm。     

Low loss optical channel waveguides for the infrared range using niobium based hybrid sol-gel material

In this work, we report the fabrication of single-mode Nb₂O₅ based hybrid sol-gel channel waveguides. Nb₂O₅ based hybrid sol-gel material has been deposited by spin-coating on silicon substrate and channel waveguides have been fabricated by a UV direct laser writing process. Optical guided modes have been observed to confirm single-mode conditions and optical propagation loss measurements have been performed using the cut-back technique. Optical propagation losses were measured to be 0.8 dB/cm and 2.4 dB/cm at 1.31 μm and 1.55 μm respectively. These experimental results demonstrate low loss optical waveguiding within the infrared range and are very promising in view of material choice for the development of integrated optical devices for telecommunication.     

Realization of MMI Power Splitter by UV-light Imprinting Technique Using Hybrid Sol-Gel SiO2 Materials

An efficient fabrication scheme of buried ridge waveguide devices is demonstrated by UV-light imprinting technique using organic-inorganic hybrid sol-gel Zr-doped SiO2 materials. The refractive indices of a guiding layer and a cladding layer for the buried ridge waveguide structure are 1.537 and 1.492 measured at 1550nm, respectively. The tested results show more circular mode profiles due to existence of the cladding layer. A buried ridge single-mode waveguide operating at 1550 nm has a low propagation loss （0.088 dB/cm） and the 1× 2 MMI power splitter exhibits uniform outputs, with a very iow splitting loss of 0.029 dB at 1549nm.     

低损耗有机无机混合溶胶凝胶波导的实验研究

利用有机无机混合的溶胶凝胶方法在硅基底上制备波导薄膜.采用正硅酸四乙酯和苯基三乙氧基硅烷作为反应先驱物，利用旋涂的方法成膜，对其折射率，传输损耗以及条形波导的光刻、刻蚀特性进行了研究.测量了波导薄膜折射率随成分变化的关系.实验表明，该方法工艺简单，可以获得具有较低损耗的波导薄膜.测试得到632.8 nm波段的损耗系数为0.23 dB/cm.采用ICP刻蚀工艺获得了较为平整的条形波导.     

Er-Yb co-doped glass waveguide amplifiers using ion exchange and field-assisted annealing

Er³⁺-Yb³⁺ co-doped waveguide amplifiers fabricated using thermal two-step ion-exchange are demonstrated. K⁺-Na⁺ ion-exchange process was first carried out in pure KNO₃ molten bath, and then field-assisted annealing (FAA) was used to make the buried waveguides. The effective buried depth is estimated to be ∼3.4 μm for the buried FAA waveguides. With the use of cut-back method, the fiber-to-guide coupling loss of ∼4.38 dB, the waveguide loss of ∼2.27 dB/cm, and Er³⁺ absorption loss ∼5.7 dB were measured for a ∼1.24-cm-long waveguide. Peak relative gain of ∼7.0 dB is obtained for a ∼1.24-cm-long waveguide. The potential for the fabrication of compact optical amplifiers operating in the range of 1520-1580 nm is also demonstrated.     

Optical channel waveguides with trapezoidal-shaped cross sections in KTiOPO4 crystal fabricated by ion implantation

Optical channel waveguides were fabricated in KTiOPO₄ crystal by He⁺-ion implantation using photoresist masks with wedged-shaped cross sections. Semi-closed barrier walls with reduced refractive indices inside the crystal constructed the enclosed regions to be channel waveguides with trapezoidal-shaped cross sections. The m-line as well as end-fire coupling arrangements were performed to characterize the waveguides with light at wavelength of 632.8 nm. The propagation loss of the channel waveguides was determined to be as low as ∼2 dB/cm after simple post-irradiation thermal annealing treatment in air.     

ZrO2/ SiO2多层膜的化学法制备研究

 分别以ZrOCl₂·8H₂O 和正硅酸乙酯为原料,采用溶胶-凝胶工艺制备了性能稳定的ZrO₂和SiO₂溶胶。用旋转镀膜法分别在K9玻璃和单晶硅片上制备了ZrO₂/ SiO₂多层膜。采用溶剂替换和紫外光处理等手段,有效地解决了ZrO₂/SiO₂多层膜中膜层开裂和膜间渗透等问题。应用扫描电子显微镜观测了薄膜的表面和剖面微观形貌,并用椭偏仪测得薄膜的厚度和折射率,研究了薄膜厚度、折射率与热处理温度、紫外光处理时间的关系,对所获得薄膜的紫外-可见、红外光谱进行了分析。用输出波长1064nm ,脉宽15ns 的电光调Q光系统产生的强激光进行了单层膜的辐照实验,结果发现溶剂替换后激光损伤阈值有所提高。     

Single mode ridge waveguides based on vinyltriethoxysilane hybrid sol–gel material

In this work, fabrication and characterization of a single-mode vinyltriethoxysilane (VTES) based hybrid organic–inorganic sol–gel ridge waveguide is reported. VTES based hybrid sol–gel material has been deposited by multiple spin-coating process on quartz substrate. Channel waveguides have been fabricated by UV photopolymerization followed by wet etching process. Optical guided mode was observed to ensure the single mode condition while cut-back technique was performed for loss propagation measurement. Optical propagation losses were measured to be 1.6 dB/cm at 1.31 μm wavelength. This value shows that this material is a promising choice for the development of integrated optical circuits for telecommunication field.     

Ion implantation into fused quartz for integrated optical circuits

Results obtained in the fabrication of slab and strip waveguides by ion implantation into fused quartz are discussed. Using a step-index waveguide model the increase in refractive index is calculated. The optical loss is smaller than 1 dB/cm at λ = 568 nm without annealing. The properties of strip waveguides fabricated by ion implantation through photoresist masks of thicknesses from 0.4 μm to 0.8 μm are described. A bright fluorescence is observed with emission at 530 nm and 640 nm and its dependence on ion fluence and ion energy is measured.     

Er-Y共掺杂ZrO2的Raman光谱和Er3+的荧光光谱

采用柠檬酸溶胶凝胶法制备Er-Y共掺杂的具有单斜、四方和立方结构的ZrO2基复合氧化物．用XRD和Raman对复合氧化物结构和不同晶相环境中Er3+的荧光光谱进行了表征．结果表明，掺杂Er3+在三种不同晶相Y-ZrO2中表现出不同的荧光特征．随着基体ZrO2由单斜相逐渐向四方和立方相转变，其荧光谱峰位置对称性提高，峰分裂数减少，谱带逐步向单峰转变．在632.8 nm激发下的Raman图谱有Er3+的荧光干扰，在514.5 nm下则以荧光光谱为主体，不能获得Raman信号，在325 nm激发下无荧光干扰．XRD和紫外Raman二种方法对物相表征结果的差别是由于样品体相和表面不一致，表层容易生成比内层结构对称性更低的物相造成的．