压力对La_(0.3)Bi_(0.2)Ca_(0.5)MnO_3中晶格畸变的影响

利用同步辐射X射线衍射技术 ,对La0 .3Bi0 .2 Ca0 .5MnO3 中存在的Jahn Teller畸变进行了原位的高压研究。实验表明 ,外加压力能有效地影响到晶格中Mn—O键长和Mn—O—Mn键角的变化。当压力为 1.8GPa时 ,在晶格中存在的两种不同畸变模式之间的相互作用下 ,导致了位于a b基面上的Q2 畸变模式的消失     

单相Na0.5Bi0.5Ti1-xMnxO3陶瓷中的多铁性

溶胶凝胶法制备了Na0.5Bi0.5Ti1-xMnxO3(x=0,0.02,0.04)陶瓷样品,X射线衍射(XRD)分析表明陶瓷样品均形成了单一的钙钛矿(ABO3)型结构且没有杂质相的形成.随着Mn含量的增加,XRD峰向高角度方向移动,表明Mn离子进入Na0.5Bi0.5TiO3晶格.掺杂样品均表现出室温铁磁性和铁电性.磁测量表明样品中存在复杂的磁相互作用,包括铁磁,反铁磁和顺磁相互作用.以上结果表明,通过Mn的掺杂可以使铁电材料Na0.5Bi0.5TiO3转变为多铁材料.     

LaB0.5Mn0.5O3(B=Co,Fe)的磁性及电输运特性的研究

采用固相烧结工艺制备了钙钛矿锰氧化物LaCo0.5Mn0.5 O3和LaFe0.5 Mn0.5O3,系统研究了样品的磁性、电输运特性和磁电阻效应.室温下LaCo0.5M0.5O3和LaFe0.5Mn0.5O3均呈现顺磁行为.电子顺磁共振得到LaFe0.5Mn0.5O3样品的朗德因子g=1.9661,与Fe3+离子(g=...     

La_(0.5)M_(0.5)MnO_3(M=Sr,Ba)的水热合成与表征

我们用水热法合成了钙钛矿锰氧化物La0.5M0.5MnO3(M=Sr,Ba)系列样品,研究了制备条件对结构、形貌和磁性的影响.     

生长温度对In_(0.5)Ga_(0.5)As/GaAs量子点尺寸的影响

采用分子束外延(MBE)技术制备In_(0.5)Ga_(0.5)As/GaAs量子点,利用扫描隧道显微镜(STM)对不同衬底温度下生长的样品进行表征分析.研究表明量子点密度随温度升高先增大后减小,其尺寸随温度的升高而增大.另外,量子点以S-K模式生长并受Ostwald熟化机制影响,其尺寸增大所需的能量来自应变能和温度提供的能量,高温条件下表面原子的解吸附作用会限制量子点的生长.     

BaHf0.5Ti0.5O3电子结构与光学性质的第一性原理研究

基于密度泛函理论体系下的广义梯度近似（GGA）,利用第一性原理方法研究了BaHf0.5Ti0.5O3的电子结构和光学性质．计算结果表明,BaHf0.5Ti0.5O3是一种间隙的半导体材料,其导带底主要由Ba、Hf和Ti的d态电子构成,价带顶则主要由O的p态、Hf 和Ti的d态电子构成;理论计算的介电函数最高峰的峰位与实验结果吻合较好,相对误差小于4%;吸收系数最大峰值为2.43×105cm-1,且吸收主要集中在低能区,静态折射率为2.01,能量损失峰出现在13.24eV处．研究结果为BaHf0.5Ti0.5O3光电材料设计与应用提供了理论依据．     

(Bi0.5Na0.5)TiO3-Ba(Ti,Zr)O3 陶瓷的电性能研究

采用氧化固相法制备了(1-x)(Bi0.5Na0.5)TiO3-xBa(Ti0.95Zr0.05)O3(BNT-BZT)陶瓷,其中掺入量x的值分别为0,0.04,0.05,0.06,0.07.研究了BNT-BZT体系陶瓷的准同型相界以及陶瓷材料的微观结构和性能之间的关系,并探讨了陶瓷的介电性能和铁电等性能.通过探究Ba(Ti,Zr)O3(BZT)掺杂量对BNT 各性能的影响得出了当掺杂量x=0.05得到结构较为致密,介电,铁电性能较好的样本,对工业化研究和生产有重要的意义     

BaZr0.5Ti0.5O3电子结构、力学和光学性质的第一性原理研究

在广义梯度近似（GGA）下,采用基于密度泛函理论的第一性原理方法对BaZr0.5Ti0.5O3的电子结构、力学性质和光学性质进行了理论计算．计算得到该晶体的晶格常数为4.145925 Å,且此材料是一种间隙的半导体材料,价带和导带都来源于Ba原子、O原子的p态和Ti原子、Zr原子的d态电子间的杂化;力学性质的计算得到：BaZrO3和BaZr0.5Ti0.5O3的晶体结构稳定,且BaZrO3晶体掺杂Ti元素后体系的硬度变大;光学计算结果表明BaZr0.5Ti0.5O3的静态介电常数为4.20,吸收主要集中在低能区,静态折射率为2.00,能量损失峰出现在11.59eV处．上述研究结果为BaZr0.5Ti0.5O3材料的设计和应用提供了理论依据．     

BaZr0.5Ti0.5O3电子结构、力学和光学性质的第一性原理研究

在广义梯度近似（GGA）下,采用基于密度泛函理论的第一性原理方法对BaZr0.5Ti0.5O3的电子结构、力学性质和光学性质进行了理论计算．计算得到该晶体的晶格常数为4.145925 Å,且此材料是一种间隙的半导体材料,价带和导带都来源于Ba原子、O原子的p态和Ti原子、Zr原子的d态电子间的杂化;力学性质的计算得到：BaZrO3和BaZr0.5Ti0.5O3的晶体结构稳定,且BaZrO3晶体掺杂Ti元素后体系的硬度变大;光学计算结果表明BaZr0.5Ti0.5O3的静态介电常数为4.20,吸收主要集中在低能区,静态折射率为2.00,能量损失峰出现在11.59eV处．上述研究结果为BaZr0.5Ti0.5O3材料的设计和应用提供了理论依据．     

(1-x)(K0.5Na0.5)NbO3-xSrTiO3陶瓷的弛豫铁电性能

通过对(1-x)(K0.5Na0.5)NbO3-xSrTiO3(0≤x≤0.15)陶瓷的相组成、晶体结构和介电性能的研究发现,该陶瓷为单一的钙钛矿结构相.当x含量较小(x＜0.1)时为正交相结构,x≥0.1时转变为四方相结构.随着SrTiO3掺杂量的增加,样品的致密度增加,样品由正常铁电相逐渐向弥散铁电相转变,且相变温度明显下降,其相变峰的半高宽D和临界指数γ,随 x 的增加而增加.样品损耗ε″r(复介电常数虚部)随温度T的变化表明低温时弛豫极化损耗起主要作用,高温时漏导损耗起主要作用.同时介电常数实部ε′r随频率的变化显示(1-x)(K0.5Na0.5)NbO3-xSrTiO3弛豫为德拜弛豫.     

Characterisation of the reduction properties of La0.5Sr0.5Fe0.5Co0.5O3

We report here on the characterisation by temperature programmed reduction, ⁵⁷Fe Mössbauer spectroscopy and X-ray absorption spectroscopy of the phases resulting from treatment of the perovskite-related material La_0.5Sr_0.5Fe_0.5Co_0.5O₃ in a flowing 90% hydrogen/10% nitrogen atmosphere. The results show that treatment of La_0.5Sr_0.5Fe_0.5Co_0.5O₃ (which contains approximately 50% Fe⁴⁺ and 50% Fe³⁺) in the flowing 90% hydrogen/10% nitrogen atmosphere at 600°C does not result in the reduction of any of the constituent elements of the material and that the perovskite structure is still retained. The Mössbauer spectrum recorded following heating in the gaseous reducing environment at 1,000°C shows the presence of metallic iron, an Fe³⁺-containing phase with parameters compatible with the presence of SrLaFeO₄ which has a K₂NiF₄-type structure, and a paramagnetic Fe³⁺ phase. The X-ray absorption spectroscopy results show the presence of metallic cobalt. The Mössbauer spectrum recorded following heating at 1,200°C continues to show the Fe³⁺-containing components plus a larger contribution from metallic iron. The X-ray absorption spectroscopy results show the presence of metallic cobalt, SrLaFeO₄, La₂O₃ and SrO.     

Crystal structure and the magnetic state of Pr0.5Sr0.5Co0.5Fe0.5O3

The magnetic properties and crystal structure of the Pr_0.5Sr_0.5Co_0.5Fe_0.5O₃ compound are studied by neutron and x-ray diffractions using synchrotron radiation. These measurements show that this compound is a dielectric spin glass with a magnetic moment freezing temperature of about 70 K. As temperature decreases in the range 30–95 K, a structure phase transition of the first order occurs with an increase in the symmetry from orthorhombic (space group Imma) to tetragonal (space group I4/mcm). It is assumed that the transition is caused by a change in the 4f electron configuration of the Pr³⁺ ions.     

Ab initio study of Os0.5W0.5B2, Re0.5W0.5B2, and Os0.5Re0.5B2 with high shear modulus

By using first‐principles calculations, the authors investigate the structural, mechanical, and electronic properties of experimentally synthesized Os_0.5W_0.5B₂. The calculated structural parameters and elastic properties are in good agreement with the experimental results. In addition, two new 5d transition‐metal diborides (Re_0.5W_0.5B₂ and Os_0.5Re_0.5B₂) are predicted to have promising large shear moduli. The latter mainly come from the non‐uniform distribution of valence charge density, which raises the value of the shear moduli. We discuss potentially high hardness in these materials. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

High-temperature impedance spectroscopy of BaFe0.5Nb0.5O3 ceramics doped with Bi0.5Na0.5TiO3

Bi_0.5Na_0.5TiO₃ (BNT)-doped BaFe_0.5Nb_0.5O₃ (BFN) ceramics were synthesized by a two-step solid-state reaction. Temperature dependence of dielectric properties measured at different frequencies was investigated over broad temperature and frequency ranges. Impedance spectroscopy and universal dielectric response were employed to study the relaxation behavior and conductivity mechanism of the ceramics in a frequency range from 40 Hz to 100 MHz and a temperature range from 300 K to 800 K. The complex plane impedance data revealed the bulk and grain boundary contributions toward conductivity processes in the form of semicircular arcs. The high-temperature conductivity of ceramics is attributable to thermally activated second ionized oxygen vacancy.     

Energy sublevels in an Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As quantum wire

We report the successful fabrication of a V-grooveAl_0.5Ga_0.5As/GaAs/Al_0.5Ga_0.5As quantum wire system and the temperature-dependent photoluminescence (PL) measurement. The PL spectra are dominated by four features at 681, 642, 635 and 621 nm attributed to the luminescences from quantum wire, top, vertical and side-wall well regions by micro-PL measurements. By the calculations of the energy structure, discrete states (localized sublevels) in the quantum wire region and continuum states (extended along the side-wall and vertical quantum wells) in side-wall and vertical quantum wells have been obtained in both the conduction and valence bands. The calculated excitation energies explain very well the peak positions and their temperature dependence in the photoluminescence measurements.     

0.5BiFeO3–0.5PbFe0.5Nb0.5O3 Multiferroic Ceramic: Structure,Dielectric and Magnetodielectric Properties

Physics of the Solid State - The structure, dielectric characteristics, and magnetoelectric effect of a 0.5BiFeO3–0.5PbFe0.5Nb0.5O3 multiferroic ceramics are studied. We found that the...     

Intrinsic pinning properties of FeSe0.5Te0.5

The intrinsic pinning properties of FeSe_0.5Te_0.5, which is a superconductor with a critical temperature T_c of approximately 14 K, were studied through the analysis of magnetization curves obtained using an extended critical state model. For the magnetization measurements carried out with a superconducting quantum interference device (SQUID), external magnetic fields were applied parallel and perpendicular to the c-axis of the sample. The critical current density J_c under the perpendicular magnetic field of 1 T was estimated using the Kimishima model to be equal to approximately 1.6 × 10⁴, 8.8 × 10³, 4.1 × 10³, and 1.5 × 10³ A/cm² at 5, 7, 9, and 11 K, respectively. Furthermore, the temperature dependence of J_c was fitted to the exponential law of J_c(0) × exp(?αT/T_c) up to 9 K and the power law of J_c(0) × (1 ? T/T_c)ⁿ near T_c.     

Phase transitions in PbSc0.5Ta0.5O3

Ordered and partially ordered PbSc_0.5Ta_0.5O₃ ferroelectric single crystals are studied by diffraction, electrophysical, and optical methods. X-ray diffraction and electrophysical methods indicate the presence of a phase transition in the low-temperature range (at T = ?40°C).     

0.5PZN-0.5PZT压电陶瓷拉曼散射研究

PZT基多元系压电陶瓷在三方相含量与四方相含量相等的准同型相界处(MPB)具有极为优异的压电性能。文章采用拉曼散射方法研究了0.5PZN-0.5PZT陶瓷体系中三方-四方相共存与弥散相变现象。研究发现,与纯PZT相比,0.5PZN-0.5PZT体系拉曼谱呈明显宽化特征,表明体系弛豫性较强,依据介温谱计算出弥散因子γ高达1.71。通过对拉曼谱峰进行Gauss函数拟合,定量计算三方相R₁模式与四方相E(3TO)和A₁(3TO)模式相对强度,以及四方相E(4LO)和A₁(3LO)模式与三方相R_h模式相对强度,结果表明0.5PZN-0.5PZT体系三方相与四方相含量相等,组成位于准同型相界,该结果得到XRD相分析验证。电学测量表明0.5PZN-0.5PZT陶瓷压电性能优异：k_p=0.66, d₃₃=425 pC/N,适宜作为压电致动器材料使用。     

Negative and persistent photoconductivity in p-type Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As heterostructures under uniaxial stress

Abstract

Illumination of a double p-Al_0.5Ga_0.5As/GaAs/Al_0.5Ga_0.5As heterostructure by a red light emitting diode results in a negative photoconductivity that, after the diode is switched off, slowly relaxes to a positive persistent photoconductivity, characterised by an approximately 1.5-fold increase of the two-dimensional hole concentration. This metastable state may be explained with a model in which deep electron traps are supposed to be located above the Fermi level on the inverted heterointerface. Under uni-axial compression the hole concentration in the persistent photoconductivity state, as well as in the dark state, demonstrates the same linear decrease.